Memory Readout Research Articles

In the Hypothetical Scenario of an Interception of the Voyagers by an ETI Probe

The Voyager 1 and 2 spacecraft were first launched in 1977 and have been travelling in deep space ever since. Currently they are outside of the solar heliosphere at a distance of approximately 163 and 136 AU respectively. The Voyager probes were also designed to carry a Golden Record in the case of contact with an extraterrestrial civilization or its representative robotic probe so that they may learn about humanity. In late 2023 the flight data subsystem on-board Voyager 1 began transmitting unusable data that differed from the usual data stream. An investigation by the engineers found that in fact the downlink transmission contained a readout of the entire system memory. In this paper we speculate on a hypothetical scenario where the data issue is indicative of an attempted forced downlink, to include command data, from a passing ETI probe that may have been curious about the Voyager 1 spacecraft origin, nature, function and purpose. This is not a claim that this was the cause, but more the construction of a scenario for the consideration of other probes that may be launched in the future. Keywords: Voyager, SETI, Probes

A memristive-photoconductive transduction methodology for accurately nondestructive memory readout

Crossbar resistive memory architectures enable high-capacity storage and neuromorphic computing, accurate retrieval of the stored information is a prerequisite during read operation. However, conventional electrical readout normally suffer from complicated process, inaccurate and destructive reading due to crosstalk effect from sneak path current. Here we report a memristive-photoconductive transduction (MPT) methodology for precise and nondestructive readout in a memristive crossbar array. The individual devices present dynamic filament form/fuse for resistance modulation under electric stimulation, which leads to photogenerated carrier transport for tunable photoconductive response under subsequently light pulse stimuli. This coherent signal transduction can be used to directly detect the memorized on/off states stored in each cell, and a prototype 4 * 4 crossbar memories has been constructed and validated for the fidelity of crosstalk-free readout in recall process.

Bistable magnetic nanowires: A new approach to non-volatile memory with single readout and automatic deletion

A novel approach for a non-volatile destructive readout memory application using bistable magnetic nanowire arrays is presented. The encoded information is stored as binary 1 and 0 by groups of NWs magnetized in the positive and negative states, respectively. We leverage the naturally occurring switching field distribution of the NW array and a tailored alternating decreasing magnetic field to program remanent magnetic states. To retrieve the information, the measured remagnetization curve exhibits a star-like behavior with jumps and plateaus and its derivative converts this information to a binary-type format. Two encoding and readout schemes are proposed and validated: binary bits and barcodes. For each case, the implementation and optimization procedures are illustrated, along with the required processing to obtain a useful readout signal. This strategy holds potential for non-volatile memory applications in which the stored information is erased during reading and can be reused indefinitely.Graphical abstract

Magneto-Chiral Dichroism in a One-Dimensional Assembly of Helical Dysprosium(III) Single-Molecule Magnets.

Here we report magneto-chiral dichroism (MChD) detected through visible and near-infrared light absorption of a chiral dysprosium(III) coordination polymer. The two enantiomers of [DyIII(H6(py)2)(hfac)3]n [H6(py)2 = 2,15-bis(4-pyridyl)ethynylcarbo[6]helicene; hfac- = 1,1,1,5,5,5-hexafluoroacetylacetonate], where the chirality is provided by a functionalized helicene ligand, were structurally, spectroscopically, and magnetically investigated. Magnetic measurements reveal a slow relaxation of the magnetization, with differences between enantiopure and racemic systems rationalized on the basis of theoretical calculations. When the enantiopure complexes are irradiated with unpolarized light in a magnetic field, they exhibit multiple MChD signals associated with the f-f electronic transitions of DyIII, thus providing the coexistence of MChD-active absorptions and single-molecule-magnet (SMM) behavior. These findings clearly show the potential that rationally designed chiral SMMs have in enabling the optical readout of magnetic memory through MChD.

Neural oscillations modulation during working memory in pre-manifest and early Huntington’s disease

IntroductionWe recently demonstrated specific spectral signatures associated with updating of memory information, working memory (WM) maintenance and readout, with relatively high spatial resolution by means of high-density electroencephalography (hdEEG). WM is impaired already in early symptomatic HD (early-HD) and in pre-manifest HD (pre-HD). The aim of this study was to test whether hdEEG coupled to source localization allows for the identification of neuronal oscillations in specific frequency bands in 16 pre-HD and early-HD during different phases of a WM task. MethodsWe examined modulation of neural oscillations by event-related synchronization and desynchronization (ERS/ERD) of θ, β, gamma low, γLOW and γHIGH EEG bands in a-priori selected large fronto-parietal network, including the insula and the cerebellum. ResultsWe found: (i) Reduced θ oscillations in HD with respect to controls in almost all the areas of the WM network during the update and readout phases; (ii) Modulation of β oscillations, which increased during the maintenance phase of the WM task in both groups; (iii) correlation of γHIGH oscillations during WM task with disease burden score in HD patients. ConclusionsOur data show reduced phase-specific modulation of oscillations in pre-HD and early-HD, even in the presence of preserved dynamic of modulation. Particularly, reduced synchronization in the θ band in the areas of the WM network, consistent with abnormal long-range coordination of neuronal activity within this network, was found in update and readout phases in HD groups.

Micro-timing of iconic memory readout

Micro-timing of iconic memory readout

Dissipation Indicates Memory Formation in Driven Disordered Systems

Disordered and amorphous materials often retain memories of perturbations they have experienced since preparation. Studying such memories is a gateway to understanding this challenging class of systems. However, it often requires the ability to measure local structural changes in response to external drives. Here, we show that dissipation is a generic macroscopic indicator of the memory of the largest perturbation. Through experiments in crumpled sheets under cyclic drive, we show that dissipation transiently increases when first surpassing the largest perturbation due to irreversible structural changes with unique statistics. This finding is used to devise novel memory readout protocols based on global observables only. The general applicability of this approach is demonstrated by revealing a similar memory effect in a three-dimensional amorphous solid.

Compact non-volatile ferroelectric electrostatic doping optical memory based on the epsilon-near-zero effect.

With the booming development of optoelectronic hybrid integrated circuits, the footprint and power consumption of photonic devices have become the most constraining factors for development. To solve these problems, this paper proposes a compact, extremely low-energy and non-volatile optical readout memory based on ferroelectric electrostatic doping and the epsilon-near-zero (ENZ) effect. The writing/erasing state of an optical circuit is controlled by electrical pulses and can remain non-volatile. The device works on the principle that residual polarization charges of ferroelectric film, which is compatible with CMOS processes, are utilized to electrostatically dope indium tin oxide to achieve the ENZ state. Simulation results show that a significant modulation depth of 10.4dB can be achieved for a device length of 60µm with an energy consumption below 1pJ.

Valley and spin quantum Hall conductance of silicene coupled to a ferroelectric layer

We study the quantum valley and Hall conductances in silicene coupled to a ferroelectric (FE) layer. The spin orbit interaction in silicene couples the valley, pseudospin, and real spin degrees of freedom resulting in a topological Berry curvature in the system. The finite Berry curvature in turn induces a transverse Hall conductance. In particular, if the Fermi level Ef is within the bulk energy gap, the Hall conductance is quantized to integer multiples of π. We study the quantum spin and valley Hall conductivities (QSH and QVH) as functions of the applied out-of-plane electric field for different values of Ef and temperature. Both conductivities vary linearly as 1/|Ef| when Ef is within the conduction or valence bands but reach a quantized plateau value when Ef is within the bulk gap. Further, by coupling silicene to a FE layer, the QSH and QVH signals can be modulated by means of the coupling strength. This can potentially provide a robust topological memory read-out with distinct binary outputs over a wide temperature range.

Dynamical Effects of Excess Carriers on SOI FeFET Memory Device Operations

We study the carrier dynamics of memory program (PGM) and readout operations for an n-type silicon-on-insulator (SOI) ferroelectric field-effect transistor (FeFET) through TCAD simulations. We found that gate-induced drain leakages (GIDL) during the PGM operation with large negative gate biases can result in excess hole concentrations as high as 7.3 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times 10^{{20}}$ </tex-math></inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-{3}}$ </tex-math></inline-formula> in the potential well formed in the SOI channel. The hole accumulation causes a large electric field across the ferroelectric (FE) layer and results in a polarization boost at a low PGM voltage. For a nano-scale SOI channel, the retention time of the excess holes can exceed microseconds according to our simulations. The outflow of the excess holes leads to a transient effect in the drain current during the readout operation, and we observed additional retention effects for the FeFET memory window due to the hole dynamic effects on the electrostatics and the FE polarizations. While the excess holes result in a ~100 ps delay in the readout phase before a large read margin can be detected, they have boosted the PGM speed and polarization window. The boosted polarization can be retained for milliseconds, and potentially beyond, resulting in an appreciable ON/OFF ratio during readout. Therefore, such effects can be utilized for low-power memory applications through proper SOI FeFET designs with the awareness of excess carrier dynamics.

Quantum pumping through the surface states of a topological insulator

We investigate quantum charge pumping through the surface states of a topological insulator (TI), i.e., ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$. We consider a device with two oscillating potentials for the generation of a dc current in the adiabatic pumping regime. Applying the exchange magnetic field, we show that the device can work as a memory read-out. Also, we show that by applying a static gate voltage the pumping device can work as a field-effect transistor. In addition, the pumped current obtained in our proposed device is significantly (more than three orders of magnitude) greater than the pumped current obtained previously for TI-based devices. These properties show that ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ can be considered a good candidate for the fabrication of nanoelectronic devices based on TI as well as low-power and low-energy consumption devices in quantum computing.

An integrated photonic device for on-chip magneto-optical memory reading.

This study presents the design, fabrication and experimental demonstration of a magneto-photonic device that delivers non-volatile photonic memory functionality. The aim is to overcome the energy and speed bottleneck of back-and-forth signal conversion between the electronic and optical domains when retrieving information from non-volatile memory. The device combines integrated photonic components based on the InP membrane on silicon (IMOS) platform and a non-volatile, built-in memory element (ferromagnetic thin-film multilayers) realized as a top-cladding on the photonic waveguides (a post-processing step). We present a design where the phase of the guided light is engineered via two mechanisms: the polar magneto-optical Kerr effect (MOKE) and the propagation in an asymmetrical cross-section (triangular) waveguide. Thanks to its design, the device yields different mode-specific transmissions depending on the memory state it encodes. We demonstrate the recording of the magnetic hysteresis using the transmitted optical signal, providing direct proof for all optical magnetic memory reading using an integrated photonic chip. Using mathematical model and optical simulations, we support the experimental observations and quantitatively reproduce the Kerr signal amplitudes on-chip. A 1% transmitted power contrast from devices is promising indicating that in a shot noise limited scenario the theoretical bandwidth of memory read-out exceeds 50 Gbits/s.

Optimization of optical spin readout of the nitrogen-vacancy center in diamond based on spin relaxation model

For quantum sensing, it is vital to develop an efficient technique for determining the quantum state of the sensor. We optimize the weighting of the photoluminescence intensity for readout of the spin state of the nitrogen-vacancy (NV) center in diamond. We find that adopting a physical model that considers the optical transitions and relaxations of the NV center allows for an efficient readout. Our method improves the signal-to-noise ratio of the readout by 5.4% in a short time of 3 s, while the existing methods typically require 1 min of integration time. We also show that our technique enhances the readout of the nuclear spin memory. The demonstrated way is helpful for a wide range of measurements, from a few minutes to several days.

A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory

Computing-in-memory (CiM) based on spintronic devices is considered to be one of the most promising solutions to address the von Neumann bottleneck. In this article, a novel CiM platform based on hybrid spintronic/CMOS memory is proposed, which can work in memory mode and computing mode. Instead of integrating complex logic units in memory, minor modifications are made to peripheral circuits to perform calculations. Profiting from the unique properties of hybrid memory and well-modified peripheral circuitry, three different computing schemes are introduced, and the computing results are obtained as typical memory readouts. Complex bulk bitwise logic functions including 16 Boolean logic functions and arithmetic operations can be implemented by combining the proposed schemes and dynamically configuring the input variables. All computing functions can be implemented without nonvolatile bit write operations, and there is no restriction on the location of operands. A 1-bit full adder and a multibit ripple carry adder are designed as instances of flexible utilization of the platform. The hybrid spintronic/CMOS simulations at the 40 nm technology node further demonstrate the functionality and performance of this work. The performance of nonvolatile memory write operations is significantly improved and requirements for device fabrication are reduced by exploiting the toggle spin torques mechanism. The resistance margins of our design are twice greater compared to the previous parallel-connected schemes.

Quantum Readout of Imperfect Classical Data.

The encoding of classical data in a physical support can be done up to some level of accuracy due to errors and the imperfection of the writing process. Moreover, some degradation of the stored data can happen over time because of physical or chemical instability of the system. Any readout strategy should take into account this natural degree of uncertainty and minimize its effect. An example are optical digital memories, where the information is encoded in two values of reflectance of a collection of cells. Quantum reading using entanglement, has been shown to enhances the readout of an ideal optical memory, where the two level are perfectly characterized. In this work, we analyse the case of imperfect construction of the memory and propose an optimized quantum sensing protocol to maximize the readout accuracy in presence of imprecise writing. The proposed strategy is feasible with current technology and is relatively robust to detection and optical losses. Beside optical memories, this work have implications for identification of pattern in biological system, in spectrophotometry, and whenever the information can be extracted from a transmission/reflection optical measurement.

NMDAR1 autoantibodies amplify behavioral phenotypes of genetic white matter inflammation: a mild encephalitis model with neuropsychiatric relevance

Encephalitis has an estimated prevalence of ≤0.01%. Even with extensive diagnostic work-up, an infectious etiology is identified or suspected in <50% of cases, suggesting a role for etiologically unclear, noninfectious processes. Mild encephalitis runs frequently unnoticed, despite slight neuroinflammation detectable postmortem in many neuropsychiatric illnesses. A widely unexplored field in humans, though clearly documented in rodents, is genetic brain inflammation, particularly that associated with myelin abnormalities, inducing primary white matter encephalitis. We hypothesized that “autoimmune encephalitides” may result from any brain inflammation concurring with the presence of brain antigen-directed autoantibodies, e.g., against N-methyl-D-aspartate-receptor NR1 (NMDAR1-AB), which are not causal of, but may considerably shape the encephalitis phenotype. We therefore immunized young female Cnp−/− mice lacking the structural myelin protein 2′-3′-cyclic nucleotide 3′-phosphodiesterase (Cnp) with a “cocktail” of NMDAR1 peptides. Cnp−/− mice exhibit early low-grade inflammation of white matter tracts and blood–brain barrier disruption. Our novel mental-time-travel test disclosed that Cnp−/− mice are compromised in what–where–when orientation, but this episodic memory readout was not further deteriorated by NMDAR1-AB. In contrast, comparing wild-type and Cnp−/− mice without/with NMDAR1-AB regarding hippocampal learning/memory and motor balance/coordination revealed distinct stair patterns of behavioral pathology. To elucidate a potential contribution of oligodendroglial NMDAR downregulation to NMDAR1-AB effects, we generated conditional NR1 knockout mice. These mice displayed normal Morris water maze and mental-time-travel, but beam balance performance was similar to immunized Cnp−/−. Immunohistochemistry confirmed neuroinflammation/neurodegeneration in Cnp−/− mice, yet without add-on effect of NMDAR1-AB. To conclude, genetic brain inflammation may explain an encephalitic component underlying autoimmune conditions.

Optoelectronic Readout of STT-RAM Based on Plasmon Drag Effect

An opto-electronic readout of the memory state in spin transfer torque random access memory (STT-RAM) cells is proposed. A single optical beam illuminating an array of STT-RAM cells creates electrical potential along each STT-RAM cell due to optical rectification that can be further enhanced through plasmon drag effect (PLDE). Then, the photo-induced voltage is assumed to be measured by conventional electronics. Here, a theoretical modeling is performed, where the results provide an estimate of the photo-induced voltage in each memory cell and its variation with respect to the changes in state of the memory cell (parallel vs anti-parallel). Our study shows that the plasmonic enhancement facilitates ${\sim }$ 20 times enhancement in the voltage change due to state change of the each memory cell, compared to the case of out-of-resonance excitation. This enhancement potentially improves the memory readout rate if a proper supporting electronic circuit is available.

In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks.

Neuromorphic computing aims at the realization of intelligent systems able to process information similarly to our brain. Brain-inspired computing paradigms have been implemented in crossbar arrays of memristive devices; however, this approach does not emulate the topology and the emergent behaviour of biological neuronal circuits, where the principle of self-organization regulates both structure and function. Here, we report on in materia reservoir computing in a fully memristive architecture based on self-organized nanowire networks. Thanks to the functional synaptic connectivity with nonlinear dynamics and fading memory properties, the designless nanowire complex network acts as a network-wide physical reservoir able to map spatio-temporal inputs into a feature space that can be analysed by a memristive resistive switching memory read-out layer. Computing capabilities, including recognition of spatio-temporal patterns and time-series prediction, show that the emergent memristive behaviour of nanowire networks allows in materia implementation of brain-inspired computing paradigms characterized by a reduced training cost.

Neuronal hibernation following hippocampal demyelination

Cognitive dysfunction occurs in greater than 50% of individuals with multiple sclerosis (MS). Hippocampal demyelination is a prominent feature of postmortem MS brains and hippocampal atrophy correlates with cognitive decline in MS patients. Cellular and molecular mechanisms responsible for neuronal dysfunction in demyelinated hippocampi are not fully understood. Here we investigate a mouse model of hippocampal demyelination where twelve weeks of treatment with the oligodendrocyte toxin, cuprizone, demyelinates over 90% of the hippocampus and causes decreased memory/learning. Long-term potentiation (LTP) of hippocampal CA1 pyramidal neurons is considered to be a major cellular readout of learning and memory in the mammalian brain. In acute slices, we establish that hippocampal demyelination abolishes LTP and excitatory post-synaptic potentials of CA1 neurons, while pre-synaptic function of Schaeffer collateral fibers is preserved. Demyelination also reduced Ca2+-mediated firing of hippocampal neurons in vivo. Using three-dimensional electron microscopy, we investigated the number, shape (mushroom, stubby, thin), and post-synaptic densities (PSDs) of dendritic spines that facilitate LTP. Hippocampal demyelination did not alter the number of dendritic spines. Surprisingly, dendritic spines appeared to be more mature in demyelinated hippocampi, with a significant increase in mushroom-shaped spines, more perforated PSDs, and more astrocyte participation in the tripartite synapse. RNA sequencing experiments identified 400 altered transcripts in demyelinated hippocampi. Gene transcripts that regulate myelination, synaptic signaling, astrocyte function, and innate immunity were altered in demyelinated hippocampi. Hippocampal remyelination rescued synaptic transmission, LTP, and the majority of gene transcript changes. We establish that CA1 neurons projecting demyelinated axons silence their dendritic spines and hibernate in a state that may protect the demyelinated axon and facilitates functional recovery following remyelination.

Marked point process representation of oscillatory dynamics underlying working memory

Objective. Computational models of neural activity at the meso-scale suggest the involvement of discrete oscillatory bursts as constructs of cognitive processing during behavioral tasks. Classical signal processing techniques that attempt to infer neural correlates of behavior from meso-scale activity employ spectral representations of the signal, exploiting power spectral density techniques and time–frequency (T–F) energy distributions to capture band power features. However, such analyses demand more specialized methods that incorporate explicitly the concepts of neurophysiological signal generation and time resolution in the tens of milliseconds. This paper focuses on working memory (WM), a complex cognitive process involved in encoding, storing and retrieving sensory information, which has been shown to be characterized by oscillatory bursts in the beta and gamma band. Employing a generative model for oscillatory dynamics, we present a marked point process (MPP) representation of bursts during memory creation and readout. We show that the markers of the point process quantify specific neural correlates of WM. Approach. We demonstrate our results on field potentials recorded from the prelimbic and secondary motor cortices of three rats while performing a WM task. The generative model for single channel, band-passed traces of field potentials characterizes with high-resolution, the timings and amplitudes of transient neuromodulations in the high gamma (80–150 Hz, γ) and beta (10–30 Hz, β) bands as an MPP. We use standard hypothesis testing methods on the MPP features to check for significance in encoding of task variables, sensory stimulus and executive control while comparing encoding capabilities of our model with other T–F methods. Main Results. Firstly, the advantages of an MPP approach in deciphering encoding mechanisms at the meso-scale is demonstrated. Secondly, the nature of state encoding by neuromodulatory events is determined. Third, we demonstrate the necessity of a higher time resolution alternative to conventionally employed T–F methods. Finally, our results underscore the novelty in interpreting oscillatory dynamics encompassed by the marked features of the point process. Significance. An MPP representation of meso-scale activity not just enables a rich, high-resolution parameter space for analysis but also presents a novel tool for diverse neural applications.