Compact non-volatile ferroelectric electrostatic doping optical memory based on the epsilon-near-zero effect.

Abstract

With the booming development of optoelectronic hybrid integrated circuits, the footprint and power consumption of photonic devices have become the most constraining factors for development. To solve these problems, this paper proposes a compact, extremely low-energy and non-volatile optical readout memory based on ferroelectric electrostatic doping and the epsilon-near-zero (ENZ) effect. The writing/erasing state of an optical circuit is controlled by electrical pulses and can remain non-volatile. The device works on the principle that residual polarization charges of ferroelectric film, which is compatible with CMOS processes, are utilized to electrostatically dope indium tin oxide to achieve the ENZ state. Simulation results show that a significant modulation depth of 10.4dB can be achieved for a device length of 60µm with an energy consumption below 1pJ.