Reading Failure Research Articles

DOES DYSLEXIA DEVELOP FROM LEFT-EYE DOMINANCE?

The purpose of this theoretical analysis and synthesis is to indicate how left-eye sighting dominance may lead to reading failure through dysfunctional right hemisphere letter encoding. Differing compensatory strategies are postulated to lead to outcomes that include the development of the phonologically impaired and phonologically proficient subtypes of dyslexia as well as specific spelling disability. Evidence is presented indicating that these disorders might be prevented by delaying the introduction of letter writing until the age of 8 years. Early childhood speech categorization in children genetically at-risk of developing dyslexia is also considered from this perspective. Convergent support for this premature writing hypothesis is provided by a comparison with the development of the left-hand inverted writing posture.

A boostless write optimised single ended robust 7T SRAM cell for ultra-low power memory design

ABSTRACTA boostless 7T static random access memory SRAM cell with high writability, improved stability and reduced read failure is proposed. The proposed 7T utilises feedback cutting during write operation, which does not require a boosted supply for single access transistor. This technique enhances the writability of the SRAM cell at ultra-low voltage (ULV) supply without any write assist at 90 and 20 nm technology nodes. The proposed 7T SRAM cell has write trip point (WTP) at 85.25 mV, whereas 5T fails to write ‘1’. The mean to sigma ratio (µ/σ) is improved by a factor of 1.08× and 7.14× for hold static noise margin (HSNM) and read margin, respectively, as compared to standard 5T at 300 mV in UMC 90 nm process technology. This also saves 26.41% read and 22.72% write power as compared to 5T SRAM cell at 300 mV. Moreover 7T also shows an improvement of 2.91% in HSNM and 1.85% in read margin by using FinFET technology.

Modeling the Interaction of Academic Self-Beliefs, Frequency of Reading at Home, Emotional Support, and Reading Achievement: An RCT Study of At-Risk Early Readers in First Grade and Second Grade

The current article examines what factors explained the success of a reading program delivered by older adult volunteers to at-risk early readers. The article also examines the direction of the relationship over time (both direct and mediated) between reading achievement, frequency of reading at home, and academic self-beliefs. Two hundred and twenty nine socially disadvantaged children recruited at the start of first and second grade at risk of reading failure participated in the randomized controlled trial study over an 18-month period. The results from structural equation modeling show the combined instructional and emotional support was a proximal outcome, whose distal outcomes included gains in reading achievement. There was no evidence that either academic self-beliefs or frequency of reading at home mediated program impact on reading achievement. In addition, academic self-beliefs became more accurate and stable as children advanced through school. Reading achievement mediated the impact of earlier reading achievement on both academic self-beliefs and frequency of reading at home for children entering second and third grade. In contrast, for the youngest children (at the start of first grade), academic self-beliefs were negatively associated with subsequent academic self-beliefs and frequency of reading at home.

Single-Ended Boost-Less (SE-BL) 7T Process Tolerant SRAM Design in Sub-threshold Regime for Ultra-Low-Power Applications

A novel single-ended boost-less 7T static random access memory cell with high write-ability and reduced read failure is proposed. Proposed 7T cell utilizes dynamic feedback cutting during write/read operation. The 7T also uses dynamic read decoupling during read operation to reduce the read disturb. Proposed 7T writes "1" through one NMOS and writes "0" using two NMOS pass transistors. The 7T has mean $$(\mu )$$(μ) of 222.3 mV (74.1 % of supply voltage) for write trip point where 5T fails to write "1" at 300 mV. It gives mean $$(\mu )$$(μ) of 276 mV (92 % of supply voltage) for read margin, while 5T fails due to read disturb at 300 mV. The hold static noise margin of 7T is maintained close to that of 5T. The read operation of 7T is 22.5 % faster than 5T and saves 10.8 % read power consumption. It saves 36.9 % read and 50 % write power consumption as compared to conventional 6T. The novel design of proposed 7T consumes least read power and achieves the lowest standard deviation as compared to other reported SRAM cells. The power consumption of 1 kb 7T SRAM array during read and write operations is 0.70$$\times $$× and 0.65$$\times $$×, respectively, of 1 kb 6T array. The techniques used by the proposed 7T SRAM cell allow it to operate at ultra-low-voltage supply without any write assist in UMC 90 nm technology node. Future applications of the proposed 7T cell can potentially be in low-voltage, ultra-low-voltage and medium-frequency operations like neural signal processor, sub-threshold processor, wide-operating-range IA-32 processor, FFT core and low-voltage cache operation.

Emulation on the Shakespearean Stage by Vernon Guy Dickson (review)

Vernon Guy Dickson. Emulation on Shakespearean Stage. Studies in Performance and Early Modern Drama. Farnham, Surrey: Ashgate, 2013. Pp. xx + 189. 60.00 [pounds sterling]. Early in Emulation on Shakespearean Stage, Vernon Guy Dickson quotes Quintilians The Orators Education: I do want Paraphrase to be mere passive reproduction, but to rival and vie with original in expressing same thoughts (quoted 11). Appearing in final paragraph of Dicksons book, another quotation from The Orators Education tempers ancient rhetoricians teaching on contentious imitation: no man can draw level with man in whose footsteps he feels bound to tread (quoted 172). In Dicksons account, in English combined these precepts. At once competition and homage, textual expression and lived behavior, emulation was seen as rote repetition but as an act of or construction, self-construction in daily life--governed by decorum, though also potentially generative of transgressive invention (12). This understanding of moreover, created that bred individuals who read selves closely like texts and attempted to shape themselves based on wide range of models, and persons, historical and contemporary--sometimes as agonists, sometimes as exemplars, sometimes simply as peers (xvii). In mounting case for this culture of emulation, Dickson draws on and deviates from Rene Girard's mimetic rivalry, Stephen Greenblatt's Renaissance self-fashioning, and Thomas M. Greenes era of imitation. Emulation on Shakespearean Stage thus ends up enacting very concept it examines. The result is study of English rhetorical and dramatic practice that provides useful review of scholarship and reads early modern drama in often generative ways. Emulation on Shakespearean Stage begins with genealogy of of in which early modern dramatists and their audiences engaged. In chapter 1 Dickson reviews principal early theories of imitation, with particular attention to Aristotle and Quintilian and to Thomas Wilson, Roger Ascham, and Sir Philip Sidney. This chapter proves especially useful in demonstrating differences in priorities between ancient and early modern rhetoricians and among English writers. For instance, although they all emphasize self-fashioning through emulative education, Wilson privileges imitation in context of classroom learning; Ascham, of social codes of behavior; and Sidney, of virtuous action (14-24). This blurring of texts (fiction and nonfiction, art and life), Dickson argues, is only foundational to emulative theory in but also the necessary condition of humanist ideal of an emulative theater on Shakespearean stage (62). The next four chapters closely read plays by Shakespeare, Ben Jonson, and Philip Massinger that take classical Rome, including its texts, culture, and ethos, as object of emulation. Each of plays also portrays a confounding enactment of Roman models (29). This compelling turn of phrase appears in chapter 2, arguably strongest chapter in book. Here, Dickson demonstrates how in Andronicus characters compete to outdo available texts and each others imitations of these texts and precedents, constructing a destructive pattern of conflicted, partial, and uncritical emulations (28). Classroom learning sets Shakespearean stage for Roman patterns of behavior that ought to promote social and political action worthy of but miscalculations in characters' discernments of what and how to emulate lead to escalating retributive violence rather than mercy. Although not as overt as Titus (53), Hamlet enacts failure of emulative reading of classical models to yield anything other than rote repetition. In chapter 3 Dickson focuses on Hamlet and lapse of decorum (match[ing] deeds to . …

Impact of Variation in Nanoscale Silicon and Non-Silicon FinFETs and Tunnel FETs on Device and SRAM Performance

One of the key challenges in scaling beyond 10-nm technology node is device-to-device variation. Variation in device performance, mainly threshold voltage, V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> , inhibits V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CC</sub> scaling. In this paper, we present a comprehensive study of process variations and sidewall roughness (SWR) effects in silicon (Si) bulk n-/p-FinFETs, In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As bulk n-FinFETs, germanium (Ge) bulk p-FinFETs, and gallium antimonide-indium arsenide (GaSb-InAs) staggered-gap heterojunction n-/p-tunnel FETs (HTFETs) using 3-D Technology Computer Aided Design numerical simulations. According to the sensitivity study, FinFET and tunnel FET (TFET) device parameters are highly susceptible to fin width, W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FIN</sub> , and ultrathin body thickness, T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</sub> , variations, respectively. TFETs show higher variation in device performance than FinFETs. A Monte Carlo study of SWR variation on nand p-FinFETs shows higher 3σ(VT Lin) of In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As bulk nand Ge bulk p-FinFETs than their Si counterparts. Furthermore, to study the variation impact on memory circuits, we simulate 6T and 10T static random access memory (SRAM) cells with FinFETs and HTFETs, respectively. The probability distribution of read failure in SRAM cells at different supply voltages, V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CC</sub> , shows that HTFETs require 10T SRAM cell architecture and less than 4% variation in T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</sub> for their V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CCmin</sub> to approach 200 mV.

Is Computer-Aided Instruction an Effective Tier-One Intervention for Kindergarten Students at Risk for Reading Failure in an Applied Setting?

This study investigated the use of computer-aided instruction (CAI) as an intervention for kindergarten students at risk for reading failure. Headsprout Early Reading (Headsprout 2005), a type of CAI, provides internet-based, reading instruction incorporating the critical components of reading instruction cited by the National Reading Panel (NRP 2000). A group of kindergarteners identified as at risk for reading failure based on fall Dynamic Indicators of Basic Early Literacy Skills (DIBELS) scores participated in Headsprout as a tier-one standard protocol, intervention within a response to intervention (RTI) process. The spring DIBELS scores of these students were compared with the scores of a matched group of kindergarten students who did not participate in CAI. Overall, kindergarteners who participated in CAI did not improve their reading performance significantly more than students who did not participate in CAI. Implications for practice and future research are discussed.

The impact of low-level lead toxicity on school performance among children in the Chicago Public Schools: a population-based retrospective cohort study.

BackgroundEnvironmental lead exposure poses a risk to educational performance, especially among poor, urban children. Previous studies found low-level lead exposure was a risk factor for diminished academic abilities, however, this study is distinct because of the very large sample size and because it controlled for very low birth weight and early preterm birth–two factors closely associated with lower academic performance. In this study we examined the association between lead concentration in whole blood (B-Pb) of Chicago Public School (CPS) children and their performance on the 3rd grade Illinois Standard Achievement Tests (ISAT) reading and math scores.MethodsWe examined 58,650 children born in Chicago between 1994 and 1998 who were tested for blood lead concentration between birth and 2006 and enrolled in the 3rd grade at a CPS school between 2003 and 2006. We linked the Chicago birth registry, the Chicago Blood Lead Registry, and 3rd grade ISAT scores to examine associations between B-Pb and school performance.ResultsAfter adjusting for other predictors of school performance including poverty, race/ethnicity, gender, maternal education and very low birth weight or preterm-birth, we found that B-Pbs below 10 μg/dL were inversely associated with reading and math scores in 3rd grade children. For a 5 μg/dL increase in B-Pb, the risk of failing increased by 32% for reading (RR = 1.32, 95%CI = 1.26, 1.39) and math (RR = 1.32, 95%CI = 1.26, 1.39). The effect of lead on reading was non-linear with steeper failure rates at lower B-Pbs. We estimated that 13% of reading failure and 14.8% of math failure can be attributed to exposure to blood lead concentrations of 5 to 9 vs. 0 to 4 μg/dL in Chicago school children.ConclusionsEarly childhood lead exposure is associated with poorer achievement on standardized reading and math tests in the third grade, even at very low B-Pbs. Preventing lead exposure in early childhood is critical to improving school performance.

Preventing Early Reading Failure

AbstractAcross the pendulum‐like changes in beginning reading instruction over the past 30 years, three interrelated ideas emerge as the key to preventing reading failure in kindergarten and first grade: (1) an interesting, carefully‐leveled book curriculum; (2) a leveled phonics curriculum; and (3) a well‐trained teacher who knows how to integrate guided reading and phonics to meet the changing needs of struggling readers. A practicum (i.e., teachers tutoring one‐on‐one under the supervision of an expert coach) is deemed the best way to develop needed teacher expertise. Although investing in teacher knowledge and skill presents challenges (e.g., finding time, finding a coach, funding the training), it represents a school's best chance of breaking the cycle of early reading failure.

IJIREEICE - Electrical, Electronics, Instrumentation and Control

This paper focuses on the DC noise margin analysis and read/write failure analysis of the proposed 8T low power SRAM cell. In the proposed structure two voltage sources, one connected with the Bit line and the other connected with the Bit bar line for reducing the voltage swing during the switching activity. These two extra voltage sources will control the voltage swing on the output node and improve the stability. DC noise margin has been calculated by using loop gain technique and comparison made with that of conventional 6T SRAM justify the efficiency of the superiority of the proposed SRAM structure. Read and Write failure analyses are also done by using Monte-Carlo simulation. Simulation has been done in 65nm CMOS technology with 1 volt of power supply. Analog and schematic simulations have been done in 65nm environment with the help of Microwind3.1 by using BSimM4 model.

A Method for Identifying Multiple RFID Tags in High Electromagnetic Interference Environments

Radio frequency identification (RFID) plays an important role in warehouse management. Unfortunately, the normal work environment in warehouses has electromagnetic interferences that cause reading failures. Failures can also be caused by other circumstances, such as collision between reading attempts, tag type, and hardware problems. Rather than propose a hardware-based approach, we propose a method based on information processing. We propose the points assignment (PA) method for the identification of multiple RFID tags based on the Hamming distances. The basic idea is to use all the readings, even if they contain errors. The method allows groups of tags to be identified in high-interference environments, where other methods have great difficulty for achieving error-free readings. The performance of the proposed method is compared with two other methods, showing that the PA achieves zero errors with fewer readings, and that it has more consistent performance as interference increases.

A Complete Characterization and Modeling of the BTI-Induced Dynamic Variability of SRAM Arrays in 28-nm FD-SOI Technology

In this paper, we present for the first time a direct measurement procedure to characterize the bias temperature instability (BTI)-induced dynamic variability in static random access memory (SRAM) cells. This measurement procedure is based on the supply read retention voltage metric. The variability results obtained with this technique are explained by means of Monte Carlo SPICE simulations. The analytical model is then proposed to extrapolate this BTI-induced variability at different stress conditions. Finally, the impact of this variability on a large SRAM array is investigated. A semianalytical method is first developed to calculate the fresh read failure probability for different operating voltages V DD . The model is then extended to address the effect of BTI stress on the SRAM array. Results show that under SRAM cells operating conditions the bitcell read stability is barely impacted by BTI stress even after 10 years of work.

Identifying Preschool Children for Higher Tiers of Language and Early Literacy Instruction Within a Response to Intervention Framework

Response to Intervention (RTI) or Multi-Tiered Systems of Support (MTSS) is beginning to be implemented in preschool programs to improve outcomes and to reduce the need for special education services. The proportions of children in programs identified as struggling learners through universal screening have important implications for the feasibility of these approaches as well as for the way programs might allocate resources and staff implementing tiered models of intervention. The expected proportions of children who might be identified for higher tiers of instructional support in pre-kindergarten settings are relatively unknown. The proportions of children who would have been identified for higher tiers of instructional language/literacy support when using three different universal screening measures are described. Participants were 659 children participating in the Center for Response to Intervention in Early Childhood (CRTIEC) Tier 1 Study. Results indicated that the proportions of children at Tier 2 and Tier 3 performance levels were higher for children in low-income eligibility programs and varied by program-level characteristics including numbers of English language learners and children with special needs, as well as the universal screening measure used. Implications of these findings suggest the importance of increased focus on early literacy and language in Tier 1 instruction in programs serving high proportions of children at risk as a means of preventing reading failure in future years.

A Brief Report of the Diagnostic Accuracy of Oral Reading Fluency and Reading Inventory Levels for Reading Failure Risk Among Second- and Third-Grade Students

The availability of psychometrically sound and usable universal screeners is a key component to successful early identification within a response-to-intervention model. The purpose of this study was to compare the diagnostic accuracy of oral reading fluency (ORF) and an informal reading inventory for identifying students considered at risk for failing a district-wide assessment. Participants included 968 students in 2nd and 3rd grade in a rural elementary school district in Minnesota. Results showed significant correlations between ORF and informal reading inventory data and between each potential screener and the criterion measure at 2nd and 3rd grades. However, ORF demonstrated higher diagnostic accuracy for correctly identifying at-risk students and resulted in 80% correct classification compared to 54% for the reading inventory data. We discuss implications for practice and directions for future research.

Their teacher can't be an app: Preschoolers' listening comprehension of digital storybooks

This study sought to determine the relationship among student- and task-level variables at play in the digital storybook listening experiences of 130 English-speaking preschoolers at risk of reading failure. Specifically, this study investigated the relationship among the (1) features of computer-based electronic storybooks, (2) preschoolers' competency in the task environment, and (3) preschoolers' background knowledge with respect to listening comprehension outcomes following a single digital storybook listening experience. The results indicate significant and strong relationships among the three variables under investigation and their consequent understanding of the digital storybook (i.e. explicit and implicit/inferential content related to the plot). The preschoolers' topic knowledge was the best predictor of comprehension. In addition, the interaction between the features of the e-book and the preschoolers' competency in the task environment also significantly predicted the outcome.

Examining Differential Effects of a Family Literacy Program on Language and Literacy Growth of English Language Learners With Varying Vocabularies

Many English language learners (ELLs) and children living in poverty begin school with substantially less English vocabulary knowledge than their monolingual, economically advantaged peers. Without effective intervention, these vocabulary gaps are likely to contribute to long-term reading failure. This quasi-experimental study examined the extent to which a family literacy program (FLP) moderated vocabulary development of 158 ELLs (prekindergarten through third grade) from low-income families in relation to children’s level of vocabulary knowledge (at, moderately below, or substantially below national norms) on program entry. The FLP activities focused on supporting parents’ development of English literacy and on teaching them effective ways to engage their children in authentic, home-based literacy events and practices that could be expected to prepare their children for success in school. Findings indicated that although all children demonstrated substantial language and literacy growth, children with the lowest pretest vocabulary knowledge achieved the greatest vocabulary gains and these gains differed significantly from their demographically matched peers who did not participate in the FLP. Gains for treatment and control children with middle and high pretest vocabulary knowledge (relative to this sample) did not differ significantly. Findings suggest that an FLP emphasizing authentic literacy practices holds particular promise in closing vocabulary gaps among children who enter early childhood classrooms with especially limited English vocabulary knowledge.

Analysis of Stability Degradation of SRAMs Using a Physics-Based PBTI Model

For the static random access memories (SRAMs) with high-k/metal gate transistors, positive bias temperature instability (PBTI)-induced stability degradation can be significant. In this letter, we analyze the temporal variations of the READ/WRITE operations and static noise margin of a conventional 6T-SRAM cell using a physics-based PBTI model. We show that the dependence of BTI effects on intrinsic variations and the design parameters of SRAM are significant A 10 mV increase in intrinsic variations can lead to double the BTI-induced read failure rate. Furthermore, SRAM is more sensitive to PBTI effects as compared with negative bias temperature instability These results validate that stochastic modeling of PBTI is required for reliable SRAM design.

Using an iPad® App to Improve Sight Word Reading Fluency for At-Risk First Graders

We used a multiple baseline across word lists design nested within a multiple baseline across participants design to examine the effects of instruction delivered using an iPad® app on sight word fluency and oral reading fluency of six first graders identified as at risk for reading failure. In Study 1, three students participated in teacher-directed iPad® instruction to learn sight words. In Study 2, three other students participated in self-mediated iPad® instruction. We measured sight word fluency and oral reading fluency in both studies; In addition, we measured academic engagement in Study 2. Results showed increases in sight word fluency during the iPad® instruction, but limited gains were seen in oral reading fluency. The three participants in Study 2 consistently achieved high levels of engagement during the iPad® instruction compared with engagement during independent reading time. The benefits of using technology in the classroom and directions for future research are discussed.

Advantages of Providing Structured Supplemental Reading Instruction to Kindergarteners At Risk for Failure in Reading

This study compared the reading gains of Kindergarten students who were at risk for reading failure who were taught with either a structured supplemental reading program or with teacher-designed or teacher-selected instruction. The authors used a quasi-experimental design with preexisting groups to examine changes from pretest to posttest. Although both programs were effective in producing statistically significant improvements in word attack and phonemic awareness skills, results revealed a pattern of moderate differences favoring a structured supplemental program called the Early Reading Tutor. Furthermore, anecdotal information from questionnaires suggested that participating tutors who used Early Reading Tutor would recommend it to others and considered it an effective yet simple program to implement.

Assessment Fidelity in Reading Intervention Research

Recent studies indicate that examiners make a number of intentional and unintentional errors when administering reading assessments to students. Because these errors introduce construct-irrelevant variance in scores, the fidelity of test administrations could influence the results of evaluation studies. To determine how assessment fidelity is being addressed in reading intervention research, we systematically reviewed 46 studies conducted with students in Grades K–8 identified as having a reading disability or at-risk for reading failure. Articles were coded for features such as the number and type of tests administered, experience and role of examiners, tester to student ratio, initial and follow-up training provided, monitoring procedures, testing environment, and scoring procedures. Findings suggest assessment integrity data are rarely reported. We discuss the results in a framework of potential threats to assessment fidelity and the implications of these threats for interpreting intervention study results.