Radio Frequency Magnetron Sputtering Research Articles

Hemocompatibility and Preangiogenic Attributes of SiBxCyNzOm Coatings for Biomedical Applications.

In current clinical practices related to orthopedics, dental, and cardiovascular surgeries, a number of biomaterial coatings, such as hydroxyapatite (HAp), diamond-like carbon (DLC), have been used in combination with metallic substrates (stainless steel, Ti6Al4V alloy, etc.). Although SiBCN coatings are widely explored in material science for diverse applications, their potential remains largely unexplored for biomedical applications. With this motivation, the present work reports the development of SiBxCyNzOm coatings on a Ti6Al4V substrate, employing a reactive radiofrequency (RF) magnetron sputtering technique. Three different coating compositions (Si0.27B0.10C0.31N0.07O0.24, Si0.23B0.06C0.21N0.22O0.27, and Si0.20B0.05C0.19N0.20O0.35) were obtained using a Si2BC2N target and varying nitrogen flow rates. The hydrophilic properties of the as-synthesized coatings were rationalized in terms of an increase in the number of oxygen-containing functional groups (OH and NO) on the surface, as probed using XPS and FTIR analyses. Furthermore, the cellular monoculture of SVEC4-10 endothelial cells and L929 fibroblasts established good cytocompatibility. More importantly, the coculture system of SVEC4-10 and L929, in the absence of growth factors, demonstrated clear cellular phenotypical changes, with extensive sprouting leading to tube-like morphologies on the coating surfaces, when stimulated using a customized cell stimulator (StimuCell) with 1.15 V/cm direct current (DC) electric field strength for 1 h. In addition, the hemocompatibility assessment using human blood samples revealed clinically acceptable hemolysis, less erythrocyte adhesion, shorter plasma recalcification, and reduced risk for thrombosis on the SiBxCyNzOm coatings, when compared to uncoated Ti6Al4V. Taken together, the present study unambiguously establishes excellent cytocompatibility, hemocompatibility, and defines the preangiogenic properties of SiBxCyNzOm bioceramic coatings for potential biomedical applications.

Effect of sputtering time on the microstructure and properties of MAO/CoCrFeNi composite coatings on TC11 alloy

In order to further improve the wear resistance and high-temperature oxidation resistance of titanium alloys, MAO/CoCrFeNi composite coatings with different sputtering times were prepared on TC11 alloy by micro-arc oxidation combined with radio frequency magnetron sputtering. The microstructure and phase composition of the composite coatings were investigated by scanning electron microscope and X-ray diffractometer. The wear performance at different temperature and high-temperature oxidation resistance of the composite coatings were studied. The results showed that as the sputtering time increases, the phase structure of composite coatings were all FCC phase, and the number of micropore on the composite coatings decreased; At room temperature, since the film thickness is proportional to the hardness, and higher hardness is conducive to the reduction of actual contact area between coating and grinding ball, so the composite coatings sputtered for 6 h had the narrowest wear scar width and the smallest wear weight loss, and its wear mechanisms were oxidative wear and adhesive wear; At 673 K, since the softening of the abrasive chips played a lubricating role, the composite coatings sputtered for 4 h produced the most abrasive chips, so it had the narrowest wear scar width and the smallest wear weight loss, and the wear mechanisms were mainly oxidative wear and adhesive wear, with slight abrasive wear; The composite coatings sputtered for 6 h was still tightly bonded to the substrate after oxidation at 1000 K, and its weight gain is smaller than TC11, which indicated that it has the best high-temperature oxidation resistance.

Deposition and structural investigation of uniform AlN(100) films at wafer scale through RF magnetron sputtering

a-axis-oriented AlN(100) films are identified as promising candidates for surface acoustic wave devices owing to their high transversal-acoustic velocity. Achieving uniform films across a wafer scale is crucial for enhancing device performance and minimizing manufacturing costs. In this study, we employ radio-frequency magnetron sputtering to deposit AlN(100) films on 2-in Si(100) wafers. We further examine the influence of various process parameters on the nonuniformity of film thickness and structural properties, including crystallite size, microstrain, and dislocation density. The optimization of parameters leads to the selection of a gas flow ratio of N2:Ar = 4:7, a sputtering power of 160 W, and a substrate temperature of 350 °C. Under these optimized conditions, the AlN films not only demonstrate a preferred (100) orientation and remarkable crystallinity, as indicated by a full width at half maximum of the X-ray diffraction peak of just 0.03°, but also achieve an optimal film thickness nonuniformity of 1.66 %. Our results offer valuable insights for the wafer-scale fabrication of AlN(100) films, potentially enhancing industrial production yields and reducing costs.

Investigation on thermoelectric properties of SnSe thin films as prepared by RF magnetron sputtering

In this work, we investigated the thermoelectric properties of SnSe (Tin Selenide) thin films onto SiO2/Si-wafer substrates as prepared by RF (radio frequency) magnetron sputtering technique. The sputtering conditions used base pressure below 5.5 10−4 Pa and working pressure at 0.93 Pa within the Ar atmosphere as a flow rate fixed 40 sccm. The RF sputtering power was applied at 80 W and sputtering time for 30 min. After thin film deposition, as-deposited thin films were annealed by the vacuum annealing method at 300–450 °C. The crystal structure, morphology and film thickness, and atomic composition of SnSe thin film were carried out by X-ray diffraction (XRD), the field emission scanning electron microscope (FE-SEM), and energy-dispersive X-ray spectroscopy (EDS) techniques, respectively. The thermoelectric properties (electrical resistivity; ρ) and Seebeck coefficient; S) were measured by the ZEM-3 method to calculate the power factor (PF) value. The results showed that the as-deposited thin films had improved the crystallography of SnSe from amorphous to crystalline phases after thin films were annealed at a temperature range of 300–400 °C. At room temperature, the maximum power factor of 0.35 mW m˗1 K˗2 (ρ = 202 mΩ m and S = 165 μV K˗1) could be found to estimate the dimensionless Figure of Merit (ZT) values around 0.44 for annealing thin film sample at 400 °C.

Corrosion Resistance of Fe-Based Amorphous Films Prepared by the Radio Frequency Magnetron Sputter Method.

Amorphous thin films can be applied to increase the anti-corrosion ability of critical components. Atomized FeCrNiMoCSiB powders were hot-pressed into a disc target for R. F. magnetron sputtering on a 316L substrate to upgrade its corrosion resistance. The XRD spectrum confirmed that the film deposited by R. F. magnetron sputtering was amorphous. The corrosion resistance of the amorphous film was evaluated in a 1 M HCl solution with potentiodynamic polarization tests, and the results were contrasted with those of a high-velocity oxy-fuel (HVOF) coating and 316L, IN 600, and C 276 alloys. The results indicated that the film hardness and elastic modulus, as measured using a nanoindenter, were 11.1 and 182 GPa, respectively. The principal stresses in two normal directions of the amorphous film were about 60 MPa and in tension. The corrosion resistance of the amorphous film was much greater than that of the other samples, which showed a broad passivation region, even in a 1 M HCl solution. Although the amorphous film showed high corrosion resistance, the original pinholes in the film were weak sites to initiate corrosion pits. After polarization tests, large, deep trenches were seen in the corroded 316L substrate; numerous fine patches in the IN 600 alloy and grain boundary corrosion in the C276 alloy were observed.

Sputtered Sn-doped Ga2O3 films under balance controlled of energy supply and ion bombardment for solar-blind detection application

The characteristics of amorphous Sn-doped Ga2O3 films deposited using radio frequency magnetron sputtering at room temperature under different sputter powers have been demonstrated. A balance mechanism of energy supply and ion bombardment controlled by sputter power has been found during the deposition. The increasing growth rate as power can be due to the increased yield sputtering species indicated by an in situ optical emission spectroscopy. As the power increases to 700 W, an obvious change from discrete nanoparticles to flat-continuous film can be observed because of sufficient energy supply for oxidation reaction, which leads to the maximum ratio of lattice oxygen and Sn4+ indicating the optimal film quality and conductive property. However, a non-negligible high energy ion bombardment presented at 900 W leads to the degraded film quality. The influence of sputtering power on Sn-doped Ga2O3 solar-blind photodetectors is demonstrated. It can obtain a good performance with an ultra-low dark current density of 2.2 × 10−11 A/cm2, a substantial light-dark current ratio of 1.08 × 103 and fast rise/decay time of 1.59 s/0.54 s at 700 W. The revelation of the role of sputtering power on the properties of Sn-doped Ga2O3 films may offer an interesting direction for low-cost and high-performance solar-blind photodetectors.

Performance evaluation of flexible thermoelectric generator with Bi2Te3 thin-film

In the information society, carrying devices such as smartphones and tablets is crucial, and ensuring their power supply is essential. Furthermore, from the perspective of energy security, being able to secure their power supply from low-quality energy sources could reduce dependence on fossil fuels. In this study, we fabricated a flexible thermoelectric generator capable of harvesting energy from a low-temperature difference between a low-temperature heat source and room or outdoor temperature and evaluated its performance. The device was fabricated by depositing an n-type Bismuth telluride (Bi2Te3) film onto a polyimide film substrate using radio frequency (RF) magnetron sputtering. A 3D printer was used to fabricate flexible fins for attaching and bonding the films. Owing to their adaptability, these flexible models can be installed on heat sources of different shapes. The experimental conditions for this study were as follows: the temperature in the test chamber was maintained at 25 ± 1 °C and that of the heat source ranged from 35 to 75 °C; further, thermoelectric elements in numbers varying from 1 to 6 were installed. The maximum open-circuit output voltage |E| and power generation (Pmax) were determined to be 11.4 mV and 69 nW, respectively. The fins with the Bi2Te3 thin film maintained a temperature of approximately 25 to 30 °C at the tip of the fin, even when exposed to the highest temperature (75 °C) of the heat source during the experiment. As a result, the thermoelectric device developed in this study has demonstrated the potential to power sensors operating in the tens of nW range.

Strong nonlinear-polarization in ZnMgO epitaxial thin-films with Li incorporation

The second-order nonlinear-polarization originated from the interaction between thin-film materials with second-order nonlinear susceptibility (χ (2)) and high-power laser is essential for integrated optics and photonics. In this work, strong second-order nonlinear-polarization was found in a-axis oriented Zn1-x Mg x O (ZnMgO) epitaxial thin-films with Li incorporation, which were deposited by radio-frequency magnetron sputtering. Mg incorporation (x > 0.3) causes a sharp fall in the matrix element χ 33 of χ (2) tensor, although it widens optical bandgap (E opt). In contrast, moderate Li incorporation significantly improves χ 33 and resistance to high-power laser pulses with a little influence on E opt. In particular, a Zn0.67Mg0.33O:Li [Li/(Zn + Mg + Li) = 0.07] thin-film shows a |χ 33| of 36.1 pm V−1 under a peak power density (E p) of 81.2 GW cm−2, a resistance to laser pulses with E p of up to 124.9 GW cm−2, and an E opt of 3.95 eV. Compared to that of ZnO, these parameters increase by 37.8%, 53.4%, and 18.6%, respectively. Specially, the Zn0.67Mg0.33O:Li shows higher radiation resistance than a Mg-doped LiNbO3 crystal with a comparable E opt. First-principle calculations reveal the Li occupation at octahedral interstitial sites of wurtzite ZnO enhances radiation resistance by improving structural stability. X-ray photoelectron spectroscopy characterizations suggest moderate Li incorporation increases χ 33 via enhancing electronic polarization. These findings uncover the close relationship between the octahedra interstitial defects in wurtzite ZnMgO and its nonlinear-polarization behavior under the optical frequency electric field of high-power laser.

Influence of silicon content on high temperature tribology performance of TiAlCrSiN coatings

A series of TiAlCrSiXN coatings with various silicon contents were fabricated on Si(100) and 304 stainless steel substrates using a radiofrequency magnetron sputtering system, aiming to examine the effects of various Si content on wear behaviors at room temperature and 700 °C. The addition of silicon notably increased the coatings' hardness from 21 GPa to 29 GPa, attributed to significant compressive residual stress (−3.4 GPa) that inhibited dislocation movement. Room temperature wear tests revealed that wear rates varied between 0.6 and 3.7 (10−6mm3N−1 m−1) with increasing silicon content. The lowest wear rate is observed at a silicon content of 3.1 at.%, which is associated with an ideal residual stress of −1.2 GPa. This stress level played a crucial role in preventing crack propagation and delamination, thus enhancing wear protection. At 700 °C, the coatings' wear resistance was mainly governed by their oxidation resistance, with the most resistant coatings exhibiting wear rates from 1.6 to 4.4 (10−6mm3N−1 m−1). The silicon addition promoted the formation of an amorphous Si3N4 phase, serving as an oxygen diffusion barrier, thus enhancing resistance to oxidation at elevated temperatures. The findings suggest that TiAlCrSiN coatings offer a promising solution for advanced tribological applications, demonstrating improved performance at temperatures up to 700 °C.

Optical and electronic properties of BCN films deposited by magnetron sputtering.

Boron carbonitride (BCN) films containing hybridized bonds involving B, C, and N over wide compositional ranges enable an abundant variety of new materials, properties, and applications; however, their electronic performance is still limited by the presence of structural and electronic defects, yielding sluggish mobility and electrical conductivity. This work reports on mechanically stable BCN films and their corresponding optical and electronic properties. The ternary BCN films consisting of hybridized B-C-N bonds have been achieved by varying N2 flow by the radio frequency magnetron sputtering method. The BCN films show a bandgap value ranging from 3.32 to 3.82eV. Hall effect measurements reveal an n-type conductivity with an improved hall mobility of 226cm2/V s at room temperature for the optimal film. The n-BCN/p-Si heterojunctions exhibit a nonlinear rectifying characteristic, where the tunneling behavior dominates the injection regimes due to the density of defects, i.e., structural disorder and impurities. Our work demonstrates the tunable electrical properties of BCN/Si p-n diodes and, thus, is beneficial for the potential application in the fields of optics, optoelectronics, and electrics.

Fabrication of thin-film batteries composed of LiCoO2, Li3PO4, and Li layers

AbstractThis paper reports the fabrication of thin-film batteries which are composed of three stacking layers: LiCoO2, Li3PO4, and Li. First, a LiCoO2 layer is constructed on an electron-conductive substrate by pulsed laser deposition as a cathode. The crystallinity of the LiCoO2 layer is mainly controlled by the cationic ratio of Li and Co. Subsequently, an amorphous Li3PO4 layer with a high ionic conductivity is further deposited on the cathode LiCoO2 layer by radio frequency magnetron sputtering as a solid electrolyte. To avoid any possible damage which causes the formation of resistive species between LiCoO2 and Li3PO4, bias control of the substrate during Li3PO4 deposition is essential. Finally, a Li metal layer is deposited as an anode/current collector on the Li3PO4/LiCoO2 bilayer by resistive heating evaporation in a vacuum at an elevated temperature for the formation of a low resistive interface. The fabricated three-layer thin-film battery shows a high-rate capability when the LiCoO2 layer is a (104)-oriented epitaxial film.

The Impact of Temperature and Power Variation on the Optical, Wettability, and Anti-Icing Characteristics of AZO Coatings

The structural, wettability, and optical characteristics of aluminum-doped zinc oxide (AZO) thin films were studied with the objective of understanding the impact of deposition power and deposition temperature. Thin films were deposited using a radio frequency (RF) magnetron sputtering technique. The power output of the RF was augmented from 200 to 260 W, and the temperature was increased from 50 to 200 °C, which led to the development of a (002) peak for zinc oxide. The study of film thickness was carried out using the Swanepoel envelope method from data obtained through the UV-Vis spectrum. An increase in surface roughness value was shown to be connected with fluctuations in temperature as well as increases in deposition power. The findings revealed that as deposition power and temperature increased, the value of optical transmittance decreased, ranging from 70% to 90% based on the deposition parameters within the range of wavelengths that extend from 300 to 800 nm. The wettability properties of the samples were studied, and the maximum contact angle achieved was 110°. A Peltier apparatus was utilised in order to investigate the anti-icing capabilities, which revealed that the icing process was slowed down 3.38-fold. This work extends the understanding of the hydrophobicity and anti-icing capabilities of AZO thin films, specifically increasing both attributes which provide feasible options for purposes requiring resistance to ice.

Controllable physicochemical properties of WOx thin films grown under glancing angle.

In this work, various physicochemical properties are investigated in nanostructured WOx thin films prepared by radio-frequency magnetron sputtering for optoelectronic applications. A glancing angle of 87° is employed to grow films of different thicknesses, which are then exposed to post-growth annealing. Detailed local probe analyses in terms of morphology and work function of WOx films are carried out to investigate thickness-dependent property modulations of the as-deposited and annealed films. The analyses show a reasonably good correlation with photoelectron spectroscopic measurements on the films and the bulk I-V characteristics acquired on a series of WOx/p-Si heterojunction diodes. The presence of a critical WOx thickness is identified to regulate the rectification ratio values at the WOx/p-Si heterostructures and increase in series resistance within the bulk of the films. The present study provides valuable insights to correlate optical, electrical, and structural properties of WOx thin films, which will be beneficial for fabricating WOx-based optoelectronic devices, including photovoltaic cells.

Electrical and Optical Properties of a Cu2O/β‐Ga2O3 pn‐Junction

A pn‐heterojunction is fabricated by depositing an n‐type β‐Ga2O3 film by pulsed laser deposition (PLD) on c‐cut Al2O3. P‐type cuprous oxide films, Cu2O, are then deposited by PLD, as well as by radio frequency (RF) magnetron sputtering. It is concluded that hole injection is prohibited by a 3.26 eV valence band barrier, as measured by X‐ray photo‐electron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Heterojunction diode structures are prepared on the front side and electrical measurements demonstrate a rectification ration of 8 orders of magnitude and an ideality factor close to 2, indicating interface recombination‐controlled forward current. The junction is also optically active and shows a very fast photo‐response to 275 nm UV light.

The ferroelectric and piezoelectric properties of (Hf1−x Ce x )O2 films on indium tin oxide/Pt/TiO x /SiO2/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method

The effect of composition and film thickness on the ferroelectric and piezoelectric properties of (Hf1−x Ce x )O2 films deposited without substrate heating was investigated. (Hf1−x Ce x )O2 films with various x values (x = 0.07–0.27) and thickness (150–880 nm) were deposited via RF magnetron sputtering on indium tin oxide (ITO)/Pt/TiO x /SiO2/(100)Si substrates. The crystalline phases of the films were observed by X-ray diffraction. The measurements of electrical properties revealed ferroelectric phases in the x range of 0.11–0.21. The film with x = 0.16 exhibited the maximum remanent polarization (Pr) of 15 μC cm−2, as well as the highest effective piezoelectric coefficient. In addition, the ferroelectric and structural properties remained almost unchanged with increasing film thickness. Therefore, the no-heating deposition of ferroelectric (Hf1−x Ce x )O2 films and their phase stability with respect to thickness were demonstrated in this study. This work provides a pathway for the deposition of ferroelectric (Hf1−x Ce x )O2 films on flexible, wearable sensors.

One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods

We present the fabrication of a MoS2−xSex thin film from a co-sputtering process using MoS2 and MoSe2 commercial targets with 99.9% purity. The sputtering of the MoS2 and MoSe2 was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS2−xSex phase with x = 1 and sharp interface formation as confirmed by Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, and cross-sectional scanning electron microscopy. The sulfur and selenium atoms prefer to distribute randomly at the octahedral geometry of molybdenum inside the MoS2−xSex thin film, indicated by a blue shift in the A1g and E1g vibrational modes at 355 cm−1 and 255 cm−1, respectively. This work is complemented by computing the thermodynamic stability of a MoS2−xSex phase whereby density functional theory up to a maximum selenium concentration of 33.33 at.% in both a Janus-like and random distribution. Although the Janus-like and the random structures are in the same metastable state, the Janus-like structure is hindered by an energy barrier below selenium concentrations of 8 at.%. This research highlights the potential of transition metal dichalcogenides in mixed phases and the need for further exploration employing low-energy, large-scale methods to improve the materials’ fabrication and target latent applications of such structures.

Monolithic Use of Inert Gas for Highly Transparent and Conductive Indium Tin Oxide Thin Films.

Due to its excellent electrical conductivity, high transparency in the visible spectrum, and exceptional chemical stability, indium tin oxide (ITO) has become a crucial material in the fields of optoelectronics and nanotechnology. This article provides a thorough analysis of growing ITO thin films with various thicknesses to study the impact of thickness on their electrical, optical, and physical properties for solar-cell applications. ITO was prepared through radio frequency (RF) magnetron sputtering using argon gas with no alteration in temperature or changes in substrate heating, followed with annealing in a tube furnace under inert conditions. An investigation of the influence of thickness on the optical, electrical, and physical properties of the films was conducted. We found that the best thickness for ITO thin films was 100 nm in terms of optical, electrical, and physical properties. To gain full comprehension of the impact on electrical properties, the different samples were characterized using a four-point probe and, interestingly, we found a high conductivity in the range of 1.8-2 × 106 S/m, good resistivity that did not exceed 1-2 × 10-6 Ωm, and a sheet resistance lower than 16 Ω sq-1. The transparency values found using a spectrophotometer reached values beyond 85%, which indicates the high purity of the thin films. Atomic force microscopy indicated a smooth morphology with low roughness values for the films, indicating an adequate transitioning of the charges on the surface. Scanning electron microscopy was used to study the actual thicknesses and the morphology, through which we found no cracks or fractures, which implied excellent deposition and annealing. The X-ray diffraction microscopy results showed a high purity of the crystals, as the peaks (222), (400), (440), and (622) of the crystallographic plane reflections were dominant, which confirmed the existence of the faced-center cubic lattice of ITO. This work allowed us to design a method for producing excellent ITO thin films for solar-cell applications.

Electrochemical catalysis of aluminum diboride thin film fabricated by radio-frequency magnetron sputtering

This study explores a novel ambient-condition method as a potential alternative to the Haber-Bosch process for ammonia synthesis. Aluminum diborides thin films were deposited using sputtering and calcination techniques to investigate the relationship between crystallinity and various properties including electrochemical catalysis, electrical conductivity, surface morphology, and bonding states. The results indicate that the calcined films reduce the electrical resistivity and exhibit enhanced crystallinity, and catalytic activity, particularly for ammonia synthesis. The findings highlight the significant impact of crystallinity on electrocatalysis in this context.

Effect of Deposition Working Power on Physical Properties of RF-Sputtered CdTe Thin Films for Photovoltaic Applications.

The main objective of this study was to determine the variation in the properties of cadmium telluride (CdTe) thin films deposited on a p-type Si substrate by the radio frequency magnetron sputtering technique at four different working powers (70 W, 80 W, 90 W, and 100 W). The substrate temperature, working pressure, and deposition time during the deposition process were kept constant at 220 °C, 0.46 Pa, and 30 min, respectively. To study the structural, morphological, and optical properties of the CdTe films grown under the mentioned experimental conditions, X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical spectroscopy were used. For a better analysis of the films' structural and optical properties, a group of films were deposited onto optical glass substrates under similar deposition conditions. The electrical characterisation of Ag/CdTe/Al "sandwich" structures was also performed using current-voltage characteristics in the dark at different temperatures. The electrical measurements allowed the identification of charge transport mechanisms through the structure. New relevant information released by the present study points towards 90 W RF power as the optimum for obtaining a high crystallinity of ~1 μm nanostructured thin films deposited onto p-Si and optical glass substrates with optical and electrical properties that are suitable for use as absorber layers. The obtained high-quality CdTe nanostructured thin films are perfectly suitable for use as absorbers in CdTe thin-film photovoltaic cells.

Etching and Compositional Ratio Effect on the Surface Properties of Bismuth Telluride Thin Films

Bismuth telluride has garnered considerable attention owing to its versatile properties applicable in thermoelectric and antibacterial domains, as well as its intriguing topological insulating properties. In this work, our group fabricated bismuth telluride thin films with various ratios using radio frequency magnetron sputtering. The surface properties of these thin films were thoroughly analyzed by employing a diverse array of analytical techniques, including X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), four-point probe and contact angle (CA) measurements. Specifically, our XPS findings indicated that Bi is more susceptible to oxidation than Te following Ar+-ion etching. Pure Te thin films exhibited the highest Rq value of 31.2 nm based on AFM and SEM results due to their larger grain sizes. The XRD patterns revealed a peak at 27.75° for thin films with 20% Te, attributed to its rhombohedral structure. Moreover, thin films with 30% Te yielded the highest weighted average work function with a value of 4.95 eV after etching. Additionally, pristine Bi and Te thin films demonstrated the most robust hydrophobic properties compared to intermediate-composition thin films, as determined by CA measurements.