Radio Frequency Magnetron Sputtering Research Articles

Fretting wear resistance of amorphous/amorphous (AlCrFeNi)N/TiN high entropy nitride nanolaminates

The application of amorphous high entropy ceramics as wear-resistant materials is limited due to their inherent brittleness at room temperature and strain softening during deformation. In order to overcome this limitation, we constructed amorphous/amorphous (AlCrFeNi)N/TiN nanolaminates with varying modulation period thickness by introducing a second amorphous phase through reactive radio frequency (RF) magnetron sputtering, along with corresponding monolithic amorphous films. Microstructure, mechanical properties, and tribological behaviors of the films were characterized wear in detail. Fretting wear results show that the nanolaminates with an average modulation period of 6 nm exhibited a wear rate of 2.8 times lower than that of the (AlCrFeNi)N film and 8.4 times lower than that of the TiN film. Further analysis using FIB-TEM revealed that the enhanced wear resistance of (AlCrFeNi)N/TiN nanolaminates was attributed to the high-density heterointerfaces. These interfaces inhibited the initiation and propagation of mature shear bands and acted as barriers to stress distribution. Additionally, the oxide composite layer at the interface demonstrated a synergistic effect through a mechanically induced tribo-chemical reaction, resulting in slight plastic deformation. For the amorphous (AlCrFeNi)N film, moderate wear resistance was achieved through the formation of transfer layer at the interface. For the amorphous TiN film, the dimensional stability of the film deteriorates due to the significant strain softening that occurs during deformation. This study deepens our understanding of the friction mechanisms involved in amorphous high entropy ceramics, offering valuable insights for the design of high damage-resistant materials.

Experimental and ab initio studies of the structural and optoelectronic properties of hexagonal wurtzite ZnO1-xSx alloys

The structural and optoelectronic properties of ZnO1-xSx alloys were investigated experimentally as well as theoretically. The ZnO1-xSx alloy thin films at different S concentrations (0.0 < x < 1.0) were deposited on quartz substrates by radiofrequency magnetron sputtering. The alloy composition was monitored with the help of optical emission spectroscopy. The ab initio density functional theory (DFT) based calculations were performed for the hexagonal wurtzite ZnO1-xSx system with the S compositions of x = 0.0, 0.0625, 0.125, 0.25, 0.5, 0.75, 0.875, 0.9375 and 1.0. The X-ray diffraction (XRD) and Raman spectroscopy measurements suggest the hexagonal wurtzite phase for the entire composition range. The films exhibit good crystalline quality with preferential growth along the c-axis. The linear change in the lattice parameter (c) was observed both from XRD analysis and DFT based calculations. The X-ray photoelectron spectroscopy confirms the anionic substitution of oxygen (O2−) and sulphur (S2−) in the hexagonal wurtzite lattice. Field emission scanning electron microscopy and atomic force microscopy were used to study the surface morphology. The optical properties were evaluated through transmittance spectroscopy and spectroscopic ellipsometry. The density of state calculations shows the forbidden region which confirms the semiconducting nature for all the alloy compositions. The energy band gap obtained from the respective Tauc's plots was found to vary from 2.9 to 3.6 eV with a bowing parameter of 3.2 eV. The same trend was observed in the calculated electronic band structures through DFT. The optical constants were evaluated from spectroscopic ellipsometry and the corresponding band gap values were compared with the values obtained from optical transmittance.

Effects of deposition temperature on the mechanical and structural properties of amorphous Al–Si–O thin films prepared by radio frequency magnetron sputtering

Aluminosilicate (Al–Si–O) thin films containing up to 31 at.% Al and 23 at.% Si were prepared by reactive RF magnetron co-sputtering. Mechanical and structural properties were measured by indentation and specular reflectance infrared spectroscopy at varying Si sputtering target power and substrate temperature in the range 100 to 500 °C. It was found that an increased substrate temperature and Al/Si ratio give denser structure and consequently higher hardness (7.4 to 9.5 GPa) and higher reduced elastic modulus (85 to 93 GPa) while at the same time lower crack resistance (2.6 to 0.9 N). The intensity of the infrared Si-O-Si/Al asymmetric stretching vibrations shows a linear dependence with respect to Al concentration. The Al–O–Al vibrational band (at 1050 cm−1) shifts towards higher wavenumbers with increasing Al concentration which indicates a decrease of the bond length, evidencing denser structure and higher residual stress, which is supported by the increased hardness. The same Al–O–Al vibrational band (at 1050 cm−1) shifts towards lower wavenumber with increasing substrate temperature indicating an increase in the average coordination number of Al.

Low current driven bidirectional violet light emitting diode based on p-GaN/n-InN heterojunction

The fabrication of a low current bidirectional driven violet p-GaN/n-InN heterojunction light-emitting diode (LED) by the radio-frequency (RF) magnetron sputtering is reported in this paper. The indium nitride (InN) films grown at different substrate temperatures were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-2600 spectrophotometer and Hall test system, and the optimum substrate temperature was found to be 250 °C. The bidirectional electroluminescence (EL) behavior and the luminescence mechanism of the diode have been investigated. Based on the above, the bidirectional EL and the effect of ambient temperature (room temperature (RT) to 80 °C) on the luminescence properties of the diode have been investigated. The diode can be driven bidirectionally at very low currents (0.03 mA under forward and 0.01 mA under reverse) and produce high-brightness violet light at forward currents of 1–5 mA and reverse currents of 1–3 mA. Finally, the EL spectra were subjected to the Gaussian peak fitting process combined with energy band diagrams to analysis the luminescence mechanism of the diode. The EL spectra all show predominantly violet emission and interface defects emissions under different polarity current drive. The proposed bidirectional violet LED based on p-GaN/n-InN heterojunction will be a potential commodity for the bidirectional driven LED market in the future.

Influence of diamond matrix morphology on ZnO surface morphology and preferred orientation

The signal propagation loss and conversion efficiency are two critical performances of diamond/ZnO film-based surface acoustic wave (SAW) device, and depend on roughness and preferred orientation degree (POD) of ZnO surface layer at plane (002). In-situ improvement of operational performance of ZnO layer is achieved by adjusting morphology of diamond matrix layer via diamond particle size. Diamond layer is deposited on silicon substrate using hot-filament chemical vapor deposition (HFCVD) technique by varying Ar/(Ar+H2) ratio. The ZnO layer is then deposited on the diamond film using radio-frequency magnetron sputtering (RFMS). The results show that, by regulating the diamond particle size, it is possible to adjust morphology of the diamond layer and facilitate variation in morphology and preferred orientation of ZnO layer for a better operational performance of SAW device. When the diamond particle size is decreased from 1.38 to 0.12 µm, the root-mean-square (RMS) roughness of ZnO layer initially drops and then rises, and the lowest roughness is 6.4 nm. Also, POD of ZnO (002) increases from 2.61 to 2.89, and then drops to 2.83. For a diamond particle size of 0.35 µm, the RMS roughness of ZnO layer has minimum value of 6.4 nm, and the POD of ZnO (002) approaches the maximum of 2.89 with a half-peak width of 0.36˚. The influence of diamond layer morphology on ZnO morphology and POD is thus proposed.

Spectral Analysis of Strontium-Doped Calcium Phosphate/Chitosan Composite Films.

Strontium-doped calcium phosphate/chitosan films were synthetized on silicon substrates using the radio-frequency magnetron sputtering technique and the matrix-assisted pulsed laser evaporation technique. The deposition conditions associated with the radio-frequency magnetron sputtering discharge, in particular, include the high temperature at the substrate, which promotes the formation of strontium-doped tetra calcium phosphate layers. The physical and chemical processes associated with the deposition of chitosan on strontium-doped calcium phosphate layers were investigated using Fourier Transform Infrared Spectroscopy, Energy Dispersive X-ray Spectroscopy, and Scanning Electron Microscopy. Mass spectrometry coupled with laser induced ablation of the composite films proved to be a useful tool in the detection of the molecular ions characteristic to chitosan chemical structure.

A comparative study of photoelectric performance of Ga2O3 solar-blind photodetectors with symmetric and asymmetric electrodes

Gallium oxide (Ga2O3) thin films were deposited on quartz substrates under different oxygen flow ratios (O2/[O2+Ar], 0%−5%) by radio-frequency (RF) magnetron sputtering technique followed by thermal annealing at 900 °C for 2 h under N2 atmosphere. The influence of the oxygen concentration on the structural and optical characteristics of Ga2O3 thin films was investigated. The Ga2O3 thin films prepared under an oxygen flow ratio of 1% exhibited optimum crystal quality and the lowest oxygen vacancy (VO) concentration according to X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) investigations. All as-prepared polycrystalline Ga2O3 thin film samples exhibited high average transmittance above 87.8% in the visible spectral region and the 0% and 1% thin films had optical bandgap energies of about 4.9 eV. We also fabricated metal−semiconductor−metal (MSM) photodetectors based on 1% Ga2O3 thin films by employing pairs of Ni−Ni symmetrical or Ni−Al asymmetrical interdigitated electrodes. The Ni−Ni photodetector had a high on/off current ratio (Ion/Ioff > 105), a responsivity of 88.7 mA/W, and specific detectivity of 4.81×1010 J at 10 V bias under ultraviolet light-C (UVC) illumination, and the Ni−Al photodetector exhibited self-driven behavior along with short rise and fall times (0.45 s and 0.69 s, respectively).

Dual low pressure plasma process for SiCN:H thin films deposition: A comparative study

SiCN:H thin films have large possibilities of applications due to their versatile chemical and physical properties. Plasma Assisted Chemical Vapor Deposition (PACVD) process is widely used for SiCN:H deposition. Here we discuss on the potentialities of dual Electron Cyclotron Resonance (ECR) and Radio Frequency Magnetron Sputtering (rf MS) plasmas coupling for SiCN:H deposition in Ar/N2/Si(CH3)4 gas mixture. The study is carried out by varying the autopolarisation voltage Vbias of the silicon target. ECR plasma gives low deposition growth rate about 50 nm/h. The films are transparent. SiCN nanopillars with high aspect ratio are obtained. Rf MS plasma gives high deposition growth rate up to 2200 nm/h. The films are opaque in the near UV and transparent in the visible depending on their thickness. The optical index at 630 nm is 1.95, the Tauc's band gap is 3.0 eV and do not change with Vbias. Dual ECR/rf MS plasma gives high deposition growth rate up to 2300 nm/h. The films are transparent. The optical index varies between 1.7 and 2.05 at 630 nm and the Tauc's band gap decreases linearly between 4.75 and 3.4 eV with Vbias. Dual ECR/rf MS plasma coupling is a very promising PACVD process for thin films deposition.

Prediction by a hybrid machine learning model for high-mobility amorphous In2O3: Sn films fabricated by RF plasma sputtering deposition using a nitrogen-mediated amorphization method

In this study, we developed a hybrid machine learning technique by combining appropriate classification and regression models to address challenges in producing high-mobility amorphous In2O3:Sn (a-ITO) films, which were fabricated by radio-frequency magnetron sputtering with a nitrogen-mediated amorphization method. To overcome this challenge, this hybrid model that was consisted of a support vector machine as a classification model and a gradient boosting regression tree as a regression model predicted the boundary conditions of crystallinity and experimental conditions with high mobility for a-ITO films. Based on this model, we were able to identify the boundary conditions between amorphous and crystalline crystallinity and thin film deposition conditions that resulted in a-ITO films with 27% higher mobility near the boundary than previous research results. Thus, this prediction model identified key parameters and optimal sputtering conditions necessary for producing high-mobility a-ITO films. The identification of such boundary conditions through machine learning is crucial in the exploration of thin film properties and enables the development of high-throughput experimental designs.

Peculiarities of the Structure of Au-TiO2 and Au-WO3 Plasmonic Nanocomposites.

As nanotechnology continues to advance, the study of nanocomposites and their unique properties is at the forefront of research. There are still various blank spots in understanding the behavior of such composite materials, especially regarding plasmonic effects like localized surface plasmon resonance (LSPR) which is essential for developing advanced nanotechnologies. In this work, we explore the structural properties of composite thin films consisting of oxide matrices and gold nanoparticles (Au NPs), which were prepared by radio-frequency magnetron sputtering. Titanium dioxide (TiO2) and tungsten trioxide (WO3) were chosen as the host matrices of the composites. Such composite thin films owing to the presence of Au NPs demonstrate the LSPR phenomenon in the visible region. It is shown, that spectroscopic study, in particular, Raman spectroscopy can reveal peculiar features of structures of such composite systems due to LSPR and photoluminescence (PL) of Au NPs in the visible spectrum. In particular, defect peaks of TiO2 (700-720 cm-1) or WO3 (935 cm-1) in Raman spectra can be clearly observed when the samples are illuminated with a 633 nm excitation laser. Excitation with 532 nm leads to a decrease in the intensity of the defect peak, which totally disappears at 473 nm excitation. Such dependences of the defect peaks on excitation laser wavelength are probably related to the polarization of the matrix's defective regions close to the interface with gold NPs.

Microstructures and mechanical properties of Sb-doped ZnO thin films deposited on a-plane sapphire substrates

The structural features and nanomechanical properties of ZnO and Sb-doped (1.0 at%) ZnO (SbZO) thin films deposited on a-plane sapphire substrates by radio-frequency (RF) magnetron sputtering are comparatively investigated in this study. The X-ray diffraction and atomic force microscopy analyses indicated that both ZnO and SbZO thin films were highly (002)-oriented albeit with somewhat different grain structure and surface morphologies. Nanoindentation results of both films exhibited apparent discontinuities (so-called pop-ins) in the load-displacement curves (P-h curves), while no discontinuity was observed in the unloading segment of the P-h curves. By using a Berkovich nanoindenter operating with the continuous contact stiffness measurement mode, the obtained hardness and Young's modulus of ZnO (SbZO) thin films are 7.3 ± 0.2 (8.5 ± 0.4) GPa and 259.6 ± 17.8 (327.4 ± 13.9) GPa, respectively. Furthermore, the facture toughness and fracture energy of ZnO and SbZO thin films obtained by Vickers indentation were also compared.

Mechanism of high qualified Mn-Co-Ni-O thin films grown at low temperature

High quality of Mn-Co-Ni-O (MCNO) thin films were prepared by radio frequency (RF) magnetron sputtering deposition at a very low temperature of ≤450 °C. The structure and electrical transport of the films were investigated under different growth and annealing conditions. It was found that the film can be transformed from a mixed conduction mechanism to a single variable range hopping conduction mechanism under appropriate condition. The optimized Mn3+/Mn4+ ratio in the film was close to 1, which was corresponding to the best probability of small polaron hopping, lowest activation energy, lowest room temperature resistivity, large negative resistance temperature coefficient, and the specific preferred (400) orientation. The electrical properties of the film were similar to that prepared under high temperature condition, which promotes the integration of MCNO to the present matured silicon technology. Our results provide an important avenue for the development of next generation of uncooled infrared focal plane arrays.

Erbium-doped Ga2O3 waveguide for optical amplification

We prepared an Er3+-doped gallium oxide amorphous film using a radio frequency magnetron sputtering method and fabricated the waveguide using ultraviolet lithography and inductively coupled plasma etching to explore its optical amplification performance. In a 7 mm long waveguide, we achieved an on-chip gain of ∼4.7 dB at a pump power of 48.6 mW (∼16.9 dBm) and a signal power of 57.5 nW (∼−42.4 dBm). The preliminary results indicate the great potentials of an amorphous Ga2O3 film as a photonic material, especially in the application of an on-chip optical amplifier.

Thermally Induced Switching of Electrical and Optical Characteristics of VO2 Thin Nanostructured Films Fabricated by Radio Frequency Magnetron Sputtering

Thermally Induced Switching of Electrical and Optical Characteristics of VO2 Thin Nanostructured Films Fabricated by Radio Frequency Magnetron Sputtering

The evolution of preferred orientation and morphology of AlN films under various sputtering parameters

Wurtzite aluminum nitride (AlN) films with (100) and (002) preferred orientations are obtained on Si (100) wafers by radio frequency magnetron sputtering. The effects of target to substrate distance (TSD), RF power, deposition pressure and substrate temperature on crystal orientation and morphology of AlN films are analyzed. It is demonstrated that the TSD is the key factor affecting the preferred orientation of AlN films. The preferred orientation transforms from (002) to (100) with the increase of TSD. Further increase of substrate temperature and RF power causes the coexistence of (002) and (100) orientation. The evolution of orientation is explained by the change in kinetic energy of sputtered particles. The correlation between the crystal orientation and the surface morphology is investigated.

Photovoltaic performance of magnetron sputtered antimony selenide thin film solar cells buffered by cadmium sulfide and cadmium sulfide /zinc sulfide

Antimony selenide (Sb2Se3)-based thin-film solar cells have recently attracted worldwide attention as an abundant, low-cost, and efficient photovoltaic technology. The highest efficiencies recorded for Sb2Se3 solar cells have been obtained using cadmium sulfide (CdS) as a buffer layer. The Cd-included hybrid buffer layers could be one option to increase device efficiency through more effective usage of light. Therefore, in this work, the effect of single CdS and hybrid CdS/zinc sulfide (ZnS) buffer layers on the photovoltaic performance of Sb2Se3 thin-film solar cells has been investigated in detail. Sb2Se3 thin films have been deposited on molybdenum (Mo)-coated soda-lime glass (SLG) substrates by radio frequency magnetron sputtering technique followed by a post-heat treatment process. The morphological, and structural properties of Sb2Se3 thin films have been investigated by X-Ray Diffraction and Scanning Electron Microscopy. To compare the device performances of single CdS and hybrid CdS/ZnS buffered Sb2Se3 thin-film solar cells, SLG/Mo/Sb2Se3/CdS/ZnS/indium tin oxide (ITO) and SLG/Mo/Sb2Se3/CdS/ITO structures have been fabricated. The findings of this study have revealed a reduction in solar cells’ performance from η=3.93% for CdS buffer to η=0.13% for CdS/ZnS hybrid buffer. The change in the solar cell performance using the CdS/ZnS hybrid buffer has been discussed in detail.

Pure ultraviolet light-emitting diode based on the p-NiO/i-NiO/n-GaN structure by magnetron sputtering

Owing to its exceptional optical and electrical properties, NiO had gained considerable attention in the past few years. A broad spectrum of its applications was expected, particularly in light-emitting diodes (LEDs). NiO thin films were concocted using radio frequency (RF) magnetron sputtering, then this study systematically investigated the correlation between substrate temperature and the film properties. Exceptional NiO thin films with excellent characteristics were successfully obtained. Moreover, leveraging the optimized substrate temperature, we fabricated a p-NiO/i-NiO/n-GaN LED. With this configuration, p-NiO served as the hole transport layer, while i-NiO, obtained through rapid annealing, functioned as the electron barrier layer (EBL), thus avoiding the lattice mismatch between the hole transport layer and the EBL. It demonstrated pronounced diode rectification characteristics, manifesting an impressively low leakage current of 3.76 × 10−12 A. Furthermore, it achieved ultraviolet electroluminescence with a wavelength (∼375 nm) and a narrow FWHM (∼5 nm). Analysis revealed that the ultraviolet light emission in the diode predominantly originated from GaN-based near-band edge (NBE) luminescence.

CuFeO2 prepared by electron cyclotron wave resonance-assisted reactive HiPIMS with two magnetrons and radio frequency magnetron sputtering

In this study, thin films of CuFeO2 were prepared using radio frequency reactive sputtering (RF) and reactive high-power impulse magnetron sputtering combined with electron cyclotron wave resonance plasma (HiPIMS-ECWR). The plasma was characterized using an RF ion probe. Plasma density, tail electron energy, and electron temperature were extracted from the measured data. The films were deposited on fluorine-doped tin oxide-coated glass and quartz glass, with the substrates being heated during the deposition process. The final delafossite CuFeO2 structure was formed after annealing in an argon gas flow at 550–600 °C. The ideal deposition conditions were found to be with a stoichiometric ratio of Cu:Fe = 1:1, which was the optimal condition for creating the delafossite CuFeO2 structure. The measured optical bandgap of CuFeO2 was 1.4 eV. The deposited CuFeO2 films were subjected to photoelectrochemical measurements in the cathodic region to investigate their potential application in solar photocatalytic water splitting. The films showed photocatalytic activity, with a photocurrent density of around 70 μA/cm2 (under an incident light irradiation of 62 mW/cm2, AM 1.5 G). The electrochemical properties of the layers were studied using open circuit potential, linear voltammetry, and chronoamperometry. The surface morphology and chemical composition of the layers were analyzed by atomic force microscopy and energy-dispersive x-ray spectroscopy, respectively. The crystalline structure was determined using XRD and Raman spectroscopy. The results of these methods are presented and discussed in this article.

Optical, Electrical and Structural Properties of ITO/IZO and IZO/ITO Multilayer Transparent Conductive Oxide Films Deposited via Radiofrequency Magnetron Sputtering

In this study, we investigated the potential of multilayer TCO structures, specifically those made up of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO), for crystalline silicon heterojunction solar cells (SHJ). We used the radiofrequency (RF) magnetron sputtering method to deposit various thin-film structures under various deposition temperatures and evaluated their electrical, optical, and morphological properties. The objective was to obtain films with lower sheet resistances and higher transmittances than those of single-layer thin films. Our results show that the ITO/IZO/ITO/IZO/ITO multilayer film structure deposited at 200 °C achieves the best sheet resistance of 18.5 Ohm/sq and a high optical transmittance of over 90% at a 550 nm wavelength. This indicates that multilayer TCO structures have the potential to be more optically and electrically efficient, and that they can improve the performance of optoelectronic devices. Finally, a power conversion efficiency of 17.46% was obtained for a silicon heterojunction (SHJ) solar cell fabricated using an ITO/IZO/ITO/IZO/ITO multilayer film structure deposited at 200 °C as a front TCO. Our study provides valuable insights into the field of TCOs and offers a promising avenue for future research.

Heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering

In this work, we demonstrate the first achievement in heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) wafers using RF magnetron sputtering. A single monoclinic (β-phase) structure with a monofamily {01} plane was obtained. XRD pole figure shows (02) and (002) textures of the (01) β-Ga2O3 plane parallel to (111) diamond with six distinct rotational domains, confirming successful epitaxial growth. Collectively, this research provides valuable insights into the epitaxial growth of β-Ga2O3 on diamond via sputtering, paving the way for scalable β-Ga2O3/diamond heterostructures for future electronic and optoelectronic applications with not only high performance but also effective self-thermal management.