Radiative Recombination Processes Research Articles

Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters

Aluminum gallium nitride [(Al,Ga)N] has gained significant attention in recent years due to its potential for highly efficient light emitters operating in the deep ultra-violet (UV) range (<280 nm). However, given that current devices exhibit extremely low efficiencies, understanding the fundamental properties of (Al,Ga)N-based systems is of key importance. Here, using a multi-scale simulation framework, we study the impact of alloy disorder on carrier transport, radiative and non-radiative recombination processes in a c-plane Al0.7Ga0.3N/Al0.8Ga0.2N quantum well embedded in a p–n junction. Our calculations reveal that alloy fluctuations can open “percolative” pathways that promote transport for the electrons and holes into the quantum well region. Such an effect is neglected in conventional and widely used transport simulations. Moreover, we find that the resulting increased carrier density and alloy induced carrier localization effects significantly increase non-radiative Auger–Meitner recombination in comparison to the radiative process. Thus, to suppress such non-radiative process and potentially related material degradation, a careful design (wider well, multi-quantum wells) of the active region is required to improve the efficiency of deep UV light emitters.

Room-temperature efficient photoluminescence mechanism of indium doping lead-free colloidal MA3Bi2Br9 quantum dots solution

Lead halide perovskite quantum dots (QDs) are promising candidates for future optoelectronic devices due to their excellent photonic and electronic properties. However, poor stability and toxicity problems limit their further development. This work demonstrates the doping tactics to boost the optical properties of lead-free colloidal MA3Bi2Br9 QDs, the indium ion (In3+) doping presented herein is found to be effective in improving the photoluminescence (PL) properties of MA3Bi2Br9 (CH3NH2 = MA) QDs without alerting their favorable electronic structure. It has been elucidated by microscopy and diffraction results that the In3+ doping optimizes the QDs solution octahedron structure, and the PL red-shifted phenomenon coincides well with the analogous red-shifted obtained in the ultraviolet/visible (UV–Vis) absorption spectroscopy, which is due to the quantum confinement effect. And the nanosecond transient absorption (ns-TA) spectroscopy elucidates that the enhanced radiative recombination process contributes to enhanced stability and luminescence. The photoluminescence quantum yield (PLQY) of MA3Bi2Br9 QDs is increased by 60.7%. This work offers a valid strategy for improving the quality of the lead-free perovskite QDs.

Anti-Stokes Photoluminescence in Halide Perovskite Nanocrystals: From Understanding the Mechanism towards Application in Fully Solid-State Optical Cooling.

Anti-Stokes photoluminescence (ASPL) is an up-conversion phonon-assisted process of radiative recombination of photoexcited charge carriers when the ASPL photon energy is above the excitation one. This process can be very efficient in nanocrystals (NCs) of metalorganic and inorganic semiconductors with perovskite (Pe) crystal structure. In this review, we present an analysis of the basic mechanisms of ASPL and discuss its efficiency depending on the size distribution and surface passivation of Pe-NCs as well as the optical excitation energy and temperature. When the ASPL process is sufficiently efficient, it can result in an escape of most of the optical excitation together with the phonon energy from the Pe-NCs. It can be used in optical fully solid-state cooling or optical refrigeration.

Temperature-dependent luminescence in pure and In+-Activated Cs3Cu2I5 single crystals

We report our investigation of the low-temperature optical properties of high-quality Cs2Cu3I5:In+ perovskite single crystals grown by the vertical Bridgman technique. Temperature-dependent radioluminescence in the range 15–300K reveals two main emissions for In+ doped samples at ∼450 nm and the other at ∼620 nm assigned to self-trapping exciton and In+ emissions respectively. Wavelength-resolved thermoluminescence reveals that In+ emission centers are the preferred recombination center for trapped charges. Further investigation of photoluminescence emission/excitation maps reveals a complex electronic structure that arises from spin-orbit coupling-related transitions in In+ and is only observable at low temperatures. Temperature-dependent photoluminescence decay measurements reveal some instances of charge transfer between the self-trapped excitons and In+ ions, as well as some thermally-assisted radiative recombination processes.

Dynamics of Moiré Exciton in a Twisted MoSe2/WSe2 Heterobilayer

AbstractMoiré potential by stacking two monolayers with slightly different lattice mismatches acts as periodic quantum confinement for optically generated excitons and provides spatially ordered 0D quantum systems. Fundamental studies on intrinsic optical phenomena in the moiré exciton are conducted; however, the excitonic states and, particularly, the dynamic properties of moiré excitons are underexplored. In this study, the unrevealed structures of moiré exciton states and their intriguing dynamics in twisted MoSe2/WSe2 heterobilayers are experimentally investigated by photoluminescence spectroscopy. Phonon‐mediated momentum dark exciton state above bright exciton state with splitting energy of ≈8 meV inside moiré potential is observed. Additionally, it is demonstrated that the dynamics of moiré excitons are determined by the radiative recombination process of bright moiré excitons at low temperatures (<20 K) and phonon‐assisted non‐radiative processes from the lowest bright to dark moiré exciton state at high temperatures (>30 K). Furthermore, additional peaks at the high‐energy side under high‐power excitation conditions are observed, which indicates emission from the triplet bright moiré exciton state with a longer decay time of 700 ns. Experimental evidence of the bright and dark exciton states within the moiré potential might provide novel platforms for quantum optics applications using moiré superlattices.

Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44

Quaternary AlGaAsSb alloys have exhibited low excess noise characteristics as gain regions in avalanche photodiodes. In this work, optical spectroscopy techniques are used to demonstrate the recombination dynamics in molecular beam epitaxy grown Al0.85Ga0.15As0.56Sb0.44 with temperature variation. Photoluminescence (PL) measurements at 8–50 K show that the bandgap varies from 1.547 to 1.527 eV. The radiative recombination processes in the alloy were found to be dictated by the complexities of antimony (Sb) incorporation during the growth. Time-resolved PL (TRPL) measurements show a change in initial carrier lifetimes of ∼3.5 µs at 8 K to ∼1 µs at 30 K. The knowledge of carrier dynamics from optical characterization methods such as PL and TRPL can be employed to contribute to shorter feedback loops for improvement of alloy fabrication in addition to enhancing growth processes.

Electron impact ionization cross sections of highly charged open L-shell tungsten ions

L-shell electron-impact ionization (EII) cross sections for highly charged tungsten ions were measured at incident electron energies of 29.10 and 38.92 keV using the Shanghai-EBIT. Resolved x-rays from radiative recombination (RR) processes were recorded with a high-purity Ge detector in a static electron energy scanning mode. Absolute EII cross sections were obtained by normalizing to the theoretical RR cross sections. The experimental results were compared with the calculated results using the relativistic distorted-wave method implemented in the flexible atomic code and the relativistic Lotz semi-empirical equation. The measurements showed general agreement with the calculated results by two theoretical methods for Li- to N-like W ions. The experimental uncertainties are not sufficiently small to discern the two theoretical results. Furthermore, the influence of Breit interaction on the EII cross sections of open L-shell tungsten ions was studied, and the effect is small but non-negligible. The measured EII cross sections of open L-shell tungsten ions would contribute to fusion plasma studies.

Dynamical aspects of photoionization from the 1s22snp1P1o levels belonging to the C iii ion near the first ionization threshold

This paper presents time-dependent Dirac calculations for femtosecond laser-driven single-photon ionization of $1{s}^{2}2snp{\phantom{\rule{0.16em}{0ex}}}^{1}{P}_{1}^{o}$ states belonging to the C iii ion, with $n\ensuremath{\le}5$, near the first ionization threshold. Increasing the field intensity broadens the photoelectron spectral distribution, pushing the lower energetic tail into the forbidden region below threshold. The energy domain cutoff condition leads to the formation of nonlocal temporal terms in the evolution of atomic states. These terms effectively give rise to discrete-continuum Rabi oscillations consisting in cycles of pulsed photoionization and stimulated radiative recombination processes, suppressing the electron yield and modulating the spectral distribution into multipeak structures. Field intensity scaling with photoelectron energy restricts these oscillations to near-threshold photoionization. These effects become relevant as state-of-the-art lasers provide shorter pulses designed to monitor electron dynamics at their natural timescales in various chemical reactions or physical processes.

Radiative recombination of a high internal-quantum-efficiency 268 nm ultraviolet C-band light emitting diode

After assigning a thickness d to the carrier recombination region of a light emitting diode (LED), we show that the ABC model involving Shockley–Read–Hall non-radiative, radiative, and Auger recombination coefficients, i.e., A, B, and C, respectively, can bring new insight into the radiative recombination process. In order to fit external quantum efficiency (EQE) data of ultraviolet C-band (UVC) as well as blue LEDs, the ABC model requires the product d·B to be invariant of the injection current. This can be understood that as the thickness of the recombination region increases the radiative recombination coefficient decreases due to reduced electron–hole wavefunction overlaps. For an LED with high internal quantum efficiency (IQE), its quality factor Q (Q=BAC) usually undergoes a noticeable drop as the injection current increases to pass the current of maximal EQE. This is due to an increase in the thickness of the recombination region and, hence, a reduction in the radiative recombination coefficient as the injected carriers start to drift or diffuse to involve more quantum wells for light emission. Applying this ABC model, we analyze a high-efficiency 268 nm UVC LED, which delivers ∼199 mW optical power under a direct current of 350 mA and obtains a maximal IQE of ∼86.4% and an effective light extraction efficiency of ∼15.3%.

Cubic CsPbI3 Nanoarchitectonics with High and Stable Photoluminescence toward White Light-Emitting Diodes

The poor stability of cesium lead iodide (CsPbI3) perovskite nanocrystals (NCs) under light and humidity conditions limits their practical application. The dynamic binding of ligands is easy to desorb during the purification process, which results in a deterioration of their optical performance and stability. In this paper, sodium dodecyl benzene sulfonate (SDBS) was used to modify the surface of CsPbI3 NCs. By utilizing the strong combined effect of benzenesulfonic acid and Pb ions, the poor stability caused by the loss of weakly interacting amine ligands was effectively improved; meanwhile, the I ion vacancies can be filled to inhibit the occurrence of nonradiative recombination, so that the optical performance of the CsPbI3 NCs is improved. The radiative and nonradiative recombination process during photoluminescence is deeply discussed. After modification, the photoluminescence quantum yields of CsPbI3 NCs reached 90.7%, the superior photoluminescence intensity still retained 83% of the initial intensity after being stored for 60 days under environmental conditions, and the stability in water was remarkably improved. Additional SDBS was used after purification, suggesting that the presence of SDBS can effectively improve photostability. This method offers a new idea for preparing high-performance perovskite-based devices.

Radiative Recombination Processes in Halide Perovskites Observed by Light Emission Voltage Modulated Spectroscopy.

The kinetics of light emission in halide perovskite light-emitting diodes (LEDs) and solar cells is composed of a radiative recombination of voltage-injected carriers mediated by additional steps such as carrier trapping, redistribution of injected carriers, and photon recycling that affect the observed luminescence decays. These processes are investigated in high-performance halide perovskite LEDs, with external quantum efficiency (EQE) and luminance values higher than 20% and 80000 Cd m-2 , by measuring the frequency-resolved emitted light with respect to modulated voltage through a new methodology termed light emission voltage modulated spectroscopy (LEVS). The spectra are shown to provide detailed information on at least three different characteristic times. Essentially, new information is obtained with respect to the electrical method of impedance spectroscopy (IS), and overall, LEVS shows promise to capture internal kinetics that are difficult to be discerned by other techniques.

Proton capture on stored radioactive 118Te ions

Experimental determination of the cross sections of proton capture on radioactive nuclei is extremely difficult. Therefore, it is of substantial interest for the understanding of the production of the p-nuclei. For the first time, a direct measurement of proton-capture cross sections on stored, radioactive ions became possible in an energy range of interest for nuclear astrophysics. The experiment was performed at the Experimental Storage Ring (ESR) at GSI by making use of a sensitive method to measure (p,γ) and (p,n) reactions in inverse kinematics. These reaction channels are of high relevance for the nucleosyn-thesis processes in supernovae, which are among the most violent explosions in the universe and are not yet well understood. The cross section of the 118Te(p,γ) reaction has been measured at energies of 6 MeV/u and 7 MeV/u. The heavy ions interacted with a hydrogen gas jet target. The radiative recombination process of the fully stripped 118Te ions and electrons from the hydrogen target was used as a luminosity monitor. An overview of the experimental method and preliminary results from the ongoing analysis will be presented.

Charge Carrier Recombination Dynamics in MAPb(Br1−yIy)3 Single Crystals

Studying the carrier recombination process in MAPb(Br1−yIy)3 single crystals (SCs) is important for its application in the optoelectronic field. In this work, a series of MAPb(Br1−yIy)3 SCs with varied Br/I compositions have been studied. Steady-state photoluminescence (PL) spectra, time-resolved photoluminescence (TRPL) spectra and time-resolved microwave photoconductivity (TRMC) were used to understand the radiative and non-radiative recombination processes of MAPb(Br1−yIy)3 SCs. By comparing the dynamics of TRPL and TRMC, we conclude that the dynamics of TRPL is dominated by the electron trapping process, which is in accordance with the fast decay component of TRMC kinetics, whereas the slower decay component in TRMC is dominated by the hole trapping process. Moreover, we find both the electron and hole trapping rates in mixed-halide perovskite MAPb(Br1−yIy)3 (0 < y < 1) SCs are higher than that of mono-halide perovskite MAPbBr3 SCs and MAPbI3 SCs. This suggests mixed-halide crystals could introduce additional electron and hole trapping densities, which could be related to the fluctuation of Br/I compositions in the crystals. This work is helpful for understanding carrier recombination process in mixed-halide perovskite SCs.

ZnPSe3 as ultrabright indirect band-gap system with microsecond excitonic lifetimes.

ZnPSe3 was identified as a two-dimensional material wherein valley and spin can be optically controlled in technologically relevant timescales. We report an optical characterization of ZnPSe3 crystals that show indirect band-gap characteristics in combination with unusually strong photoluminescence. We found evidence of interband recombination from photoexcited electron-hole states with lifetimes in a microsecond timescale. Through a comparative analysis of photoluminescence and photoluminescence excitation spectra, we reconstructed the electronic band scheme relevant to fundamental processes of light absorption, carrier relaxation, and radiative recombination through interband pathways and annihilation of defect-bound excitons. The investigation of the radiative processes in the presence of a magnetic field revealed spin splitting of electronic states contributing to the ground excitonic states. Consequently, the magnetic field induces an imbalance in the number of excitons with the opposite angular momentum according to the thermal equilibrium as seen in the photoluminescence decay profiles resolved by circular polarization.

Effect of the surroundings on the photophysical properties of CsPbBr3 perovskite quantum dots embedded in SiOx matrices

AbstractOrganometallic lead halide perovskites have been studied extensively owing to their excellent photophysical properties and have been successfully applied to solar‐driven chemistry and optoelectronic devices. Dimensionally confined perovskite quantum dots (PQDs) have demonstrated outstanding photoluminescence quantum yields, detailed band gap tunability, wide color gamut, and favorable radiative recombination processes. These characteristics expand the versatility of PQDs. Various efforts have been made to increase their stability. The introduction of a core–shell structure increased the stability of PQDs, and they were successfully applied to light‐emitting diodes. Recently, our group demonstrated the potential of PQDs to promote photocatalytic degradation of carcinogens. However, further studies on the detailed interactions between PQDs and their surroundings are necessary to utilize them in practice. This study investigated the impact of surrounding solvents on the material/photophysical properties of PQDs and statistically observed the photoinduced charge transfer from PQDs to transparent conducting oxides. The findings of this study could be used to advance solar‐driven chemistry and optoelectronic devices and to promote the utilization of PQDs in renewable energy applications.

(Invited) Characterization of Semiconductor Crystals Based on Omnidirectional Photoluminescence (ODPL) Spectroscopy

The performance of optical devices based on nitride semiconductors operating in the ultraviolet and visible wavelength regimes has been remarkably improved. For example, high-efficiency blue InGaN light-emitting diodes (LEDs) with an external quantum efficiency (EQE) of over 80% was achieved [Y. Narukawa, M. Ichikawa1, D. Sanga, M. Sano, and T. Mukai, J. Phys. D: Appl. Phys. 43, 354002 (2010)], and green laser diodes (LDs) was realized [Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama and T. Nakamura, Appl. Phys. Express 2, 082101 (2009)]. Recently, deep-ultraviolet AlGaN LEDs and LDs have also become hot topics. The nitride semiconductors have been actively applied not only to optical applications but also to electronic devices such as high-voltage transistors and high-electron mobility transistors based on their high breakdown voltage and saturation electron velocity. The performance of these optical and electronic devices relies on the crystal growth technology, where quality of GaN freestanding substrate is one of the most important issues.In recent years, it has become common for the "high-quality" GaN freestanding crystals to have a threading dislocation (TD) density of 106 cm-2 or less. TD density of 106 cm-2 corresponds to an average distance between TDs of 10 μm, which means that the TDs are sparser than 1 μm, the order of the carrier diffusion length. In other words, the TDs are no longer dominant in recombination processes of minority carriers (although this is a rather broad argument). In this case, the recombination processes, especially nonradiative recombination process, are likely to be dominated by point defects and impurities rather than by the sparse TDs.In fact, a negative correlation between room-temperature (RT) photoluminescence (PL) lifetime for the near-band-edge (NBE) emission and the concentration of VGaVN (a divacancy consisting of Ga and N vacancies) has been pointed out by a combined study of time-resolved PL measurements, positron annihilation spectroscopy, and theoretical calculations [S. F. Chichibu, A. Uedono, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, and S. Ishibashi, J. Appl. Phys. 123, 161413 (2018)]. Since PL lifetime measured at RT indicates nonradiative recombination lifetime when the internal quantum efficiency (IQE) of the crystal is low, this negative correlation means that the lower concentration of VGaVN induces larger intensity of the NBE emission.Actually, we have observed PL lifetime exceeding 2 ns at RT in a GaN crystal grown by halide vapor phase epitaxy (HVPE) on m-plane GaN grown by the acidic ammonothermal method as a seed crystal [K. Kojima, Y. Tsukada, E. Furukawa, M. Saito, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and S. F. Chichibu, Appl. Phys. Express 8, 095501 (2015)]. This is an extremely long value for a GaN crystal, which means that the nonradiative recombination lifetime is long, i.e., the IQE of the NBE emission is large. In this case, the validity of the approximation where the PL lifetime at RT is directly read into the nonradiative recombination lifetime becomes an issue.Therefore, in order to compare the quality of GaN freestanding crystals, it is important to measure the IQE as well as the PL lifetime. The IQE value for the NBE emission in semiconductor crystals is a quantity that represents the balance between radiative and nonradiative recombination processes and is directly related to the concentration of point defects and impurities that form deep levels. Therefore, the IQE can be used as an indicator of not only the energy-saving performance of optical devices but also the performance of GaN crystals as a substrate material in electronic devices.In this presentation, the characterization of semiconductors with direct bandgap by using omnidirectional photoluminescence (ODPL) spectroscopy, a technique that can determine the IQE from the EQE without the need for model calculations, will be reviewed. Using GaN, ZnO, and metal halide perovskites as examples, specific procedures and applications of IQE determination will be discussed. In particular, the ability to measure large sample crystals or wafers is one of the major features of the ODPL spectroscopy, and it is expected to be combined with mapping measurements of the entire surface of semiconductor wafers and various types of nonlinear and microscopic spectroscopy.

An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

We demonstrate an all optical approach that can surprisingly offer the possibility of yielding much more information than one would expect, pertinent to the carrier recombination dynamics via both radiative and nonradiative processes when only one dominant deep defect level is present in a semiconductor material. By applying a band-defect state coupling model that explicitly treats the inter-band radiative recombination and Shockley–Read–Hall (SRH) recombination via the deep defect states on an equal footing for any defect center occupation fraction, and analyzing photoluminescence (PL) as a function of excitation density over a wide range of the excitation density (e.g., 5–6 orders in magnitude), in conjunction with Raman measurements of the LO-phonon plasmon (LOPP) coupled mode, nearly all of the key parameters relevant to the recombination processes can be obtained. They include internal quantum efficiency (IQE), minority and majority carrier density, inter-band radiative recombination rate (Wr), minority carrier nonradiative recombination rate (Wnr), defect center occupation fraction (f), defect center density (Nt), and minority and majority carrier capture cross-sections (σt and σtM). While some of this information is thought to be obtainable optically, such as IQE and the Wr/Wnr ratio, most of the other parameters are generally considered to be attainable only through electrical techniques, such as current-voltage (I-V) characteristics and deep level transient spectroscopy (DLTS). Following a procedure developed herein, this approach has been successfully applied to three GaAs double-heterostructures that exhibit two distinctly different nonradiative recombination characteristics. The method greatly enhances the usefulness of the simple PL technique to an unprecedented level, facilitating comprehensive material and device characterization without the need for any device processing.

Fabrication of a near-infrared fluorescence-emitting SiO2-AuZnFeSeS quantum dots-molecularly imprinted polymer nanocomposite for the ultrasensitive fluorescence detection of levamisole

Levamisole is an anthelminthic drug that is usually used as a cutting agent to lace illicit cocaine samples and has been classified as a dangerous substance. In this work, we report on the fabrication of a novel fluorescence sensor for levamisole using AuZnFeSeS alloyed quantum dots (QDs)-molecularly imprinted polymer (MIP) nanocomposite. Firstly, organic-phased AuZnFeSeS QDs were synthesized via the organometallic hot-injection pyrolysis of metal precursors, surfactants, and organic ligands. Silica (SiO2) was then encapsulated on the QDs surface to render it compact, stable, and biocompatible. Via a free radical polymerization approach, a robust MIP shell templated with levamisole was coated around the SiO2-AuZnFeSeS QDs surface to form a AuZnFeSeS QDs@MIP core/shell nanocomposite. Passivation of the SiO2-AuZnFeSeS QDs core surface with the MIP shell led to radiative exciton recombination process, whereby the QDs fluorescence was enhanced. Interestingly, the SiO2-AuZnFeSeS QDs was characterized by rod-shaped and spherical-shaped particle morphology. Under optimum conditions, the fluorescence of the AuZnFeSeS QDs@MIP nanocomposite was quenched in the presence of levamisole and was selective against other tested drugs. Quantitative detection was achieved in the concentration range of 0.5 – 100 μM with a limit of detection of 0.05 μM (47.4 nM). Validation of the MIP-levamisole affinity was demonstrated by the superior sensitivity of the AuZnFeSeS QDs@MIP over the AuZnFeSeS QDs@NIP (non-templated material). Levamisole was successfully detected in a mixed drug sample containing cocaine with satisfactory analytical recoveries. This work is the first reported use of a cadmium-free quintenary alloyed QDs@MIP nanocomposite fluorescence detection system for levamisole.

AlGaN Microfins as Nonpolar UV Emitters Probed by Time-Resolved Cathodoluminescence

Despite the continuous technological progress and recent commercialization of UV light emitting diodes for sterilization and disinfection applications, the performance of solid-state UV emitters still lags far behind that of their InGaN-based counterparts, which emit in the visible blue–green spectrum. Both fundamental physical aspects and material quality restrictions have been discussed as origin of this striking difference. In this study, GaN/AlGaN core–shell microfins with a-plane sidewalls are proposed as a model system to demonstrate the efficiency potential of ultra-low-defect nonpolar UV emitters. Such structures are manufactured by bottom-up selective-area metalorganic vapor phase epitaxy of GaN microfin cores and further overgrowth of the AlGaN active region, employing a compositionally graded GaN/AlGaN short-period superlattice for strain management. Using this approach, mostly crack-free AlGaN quantum wells emitting around 321 nm could be realized with a threading dislocation density of as low as (6 ± 3) × 107 cm–2. The carrier dynamics within the nonpolar AlGaN structures are studied by time-resolved cathodoluminescence spectroscopy, revealing fast radiative recombination lifetimes down to 0.6 ns and distinct signatures of carrier localization at low temperatures. Delayed carrier emission from localized states within the cladding is proposed to be a cause for anomalously high effective carrier lifetimes observed at temperatures below 80 K. By analyzing the characteristic temperature dependence of radiative and nonradiative recombination processes and fitting the lifetime data with an appropriate model across the whole temperature range, a room-temperature internal quantum efficiency of (40 ± 6) % is estimated for the studied sample. The findings corroborate the interest in nonpolar AlGaN structures as highly efficient UV emitters.

The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures.

In this paper, we present a comparative analysis of the optical properties of non-polar and polar GaN/AlGaN multi-quantum well (MQW) structures by time-resolved photoluminescence (TRPL) and pressure-dependent studies. The lack of internal electric fields across the non-polar structures results in an improved electron and hole wavefunction overlap with respect to the polar structures. Therefore, the radiative recombination presents shorter decay times, independent of the well width. On the contrary, the presence of electric fields in the polar structures reduces the emission energy and the wavefunction overlap, which leads to a strong decrease in the recombination rate when increasing the well width. Taking into account the different energy dependences of radiative recombination in non-polar and polar structures of the same geometry, and assuming that non-radiative processes are energy independent, we attempted to explain the ‘S-shape’ behavior of the PL energy observed in polar GaN/AlGaN QWs, and its absence in non-polar structures. This approach has been applied previously to InGaN/GaN structures, showing that the interplay of radiative and non-radiative recombination processes can justify the ‘S-shape’ in polar InGaN/GaN MQWs. Our results show that the differences in the energy dependences of radiative and non-radiative recombination processes cannot explain the ‘S-shape’ behavior by itself, and localization effects due to the QW width fluctuation are also important. Additionally, the influence of the electric field on the pressure behavior of the investigated structures was studied, revealing different pressure dependences of the PL energy in non-polar and polar MQWs. Non-polar MQWs generally follow the pressure dependence of the GaN bandgap. In contrast, the pressure coefficients of the PL energy in polar QWs are highly reduced with respect to those of the bulk GaN, which is due to the hydrostatic-pressure-induced increase in the piezoelectric field in quantum structures and the nonlinear behavior of the piezoelectric constant.