Radiative Recombination Processes Research Articles

Laser-assisted radiative recombination in a cold hydrogen plasma

Abstract We study the process of laser-assisted radiative recombination of an electron with a proton in a cold hydrogen plasma employing the semiclassical Kramers’ approach which involves calculation of classical trajectories in combined laser and Coulomb fields and the use of the correspondence principle. Due to the Coulomb focusing effect, recombination is the most effective when the initial electron momentum is parallel to the laser polarization. Orders of magnitude enhancement of the cross section, as compared to the laser-free case, is observed in this case. With increasing angle between the electron momentum and polarization, the recombination cross section drops. However, even after averaging over Maxwellian velocity distribution we obtain a substantial enhancement of the recombination rate constant, as compared to the zero-field case. For the field intensities in the range 30–350 MW cm−2, the enhancement occurs in the region of the radiation wavelength from 5 to 20 µm and for the plasma temperature from 20 to 300 K.

Interplay of Phonon Directionality and Emission Polarization in Two-Dimensional Layered Metal Halide Perovskites.

ConspectusLayered metal halide perovskites represent a natural quantum well system for charge carriers that provides rich physics, and the organic encapsulation of the inorganic metal halide layers not only increases their stability in devices but also provides an immense freedom to design their functionality. Intriguingly, these organic moieties strongly impact the optical, electrical, and mechanical properties, not only through their dielectric, elastic, and chemical properties but also because of induced mechanical distortions in the inorganic lattice. This tunability makes two-dimensional layered perovskites (2DLPs) highly attractive as light emitters. Common consensus is that exciton-phonon coupling plays an important role in radiative recombination. For bulk and some two-dimensional (2D) materials, the band edge emission broadening can be described by the classic models for polar inorganic semiconductors, while for the temperature dependence of the self-trapped exciton emission, an analysis developed for color centers has been successfully applied. For many 2DLPs these approaches do not work because of the complexity of their vibrational spectra. However, their emission is still strongly determined by phonons, and therefore, an adequate understanding of the electron-phonon coupling needs to be developed.With polarized and angle-resolved Raman spectroscopy studies on single 2DLP flakes based on different ammonium molecules as organic cations, in 2020 we revealed very rich phonon spectra in the low-frequency regime. Although the phonon bands at low frequency can generally be attributed to the vibrations of the inorganic lattice, we found very different responses by only changing the type of organic cations. In addition, the intensity of the different phonon modes depended strongly on the angle of the linearly polarized excitation beam with respect to the in-plane axes of the octahedron lattice. In 2022, we mapped this angular dependence of the phonon modes, which allowed identification of the directionality of the different lattice vibrations. By correlating the phonon spectra with the temperature-dependent emission for a set of 2DLPs that featured very different self-trapped exciton (STE) emission, we demonstrated that the exciton relaxation cannot be related to coupling with a single (longitudinal-optical) phonon band and that several phonon bands should be involved in the emission process. To gain insights into the exciton-phonon coupling effects on the band edge emission, we performed both angle-resolved polarized emission and Raman spectroscopy on single 2D lead iodide perovskite microcrystals. These experiments revealed the impact of the organic cations on the linear polarization of the emission and corroborated that multiple phonon bands should be involved in the radiative recombination process. Analysis of the temperature-dependent line width broadening of the band edge emission showed that for many systems, the behavior cannot be described by assuming the involvement of only one phonon mode in the electron-phonon coupling process. Our studies revealed a wealth of highly directional low-frequency phonons in 2DLPs from which several bands are involved in the emission process, which leads to diverse optical and vibrational properties depending on the type of organic cation in the material.

Variation of carrier lifetime with optical excitation power density in micro-LEDs

GaN-based micro-LEDs are applied to visible light communication due to their high modulation bandwidth with reduced chip size. It requires a deep understanding of recombination processes and their impact on the bandwidth, which is mainly determined by the carrier lifetime. We employed confocal time-resolved photoluminescence (TRPL) to characterize the variation of carrier lifetime with optical excitation power density on micro-LEDs. We observed an initial increase followed by a sudden decrease within the power density range of 96.7 kW/cm2 to 546 kW/cm2 on a blue micro-LED with a chip size of 80 µm. We attribute this phenomenon to increased optical excitation power, gradually saturating the defect-dominated non-radiative recombination centers, with radiative recombination processes gradually taking over. We compared the power density at the inflection point for different regions on the sample and the samples with different sizes and sidewall structures. The power density for the lifetime inflection point at the center of the sample is smaller than that at the edge. We also find that the value is smaller for the sample with a chip size of 40 µm which prompts fewer total defects. The power density for sudden lifetime drop on samples with inclined sidewall structures is also smaller than those with vertical sidewall structures. Furthermore, we find that the excitation power density corresponding to the highest luminous efficiency is higher than that corresponding to the sudden drop at the beginning of the lifetime. This opens up possibilities for simultaneously achieving high modulation bandwidth and high efficiency between the two inflection points.

PyArc: A python package for computing absorption and radiative coefficients from first principles

Light absorption and radiative recombination are two critical processes in optoelectronic materials that characterize the energy conversion efficiency. The absorption and radiative coefficients are thus key properties for device optimization and design. Here, we develop a python package named pyArc that allows rigorous computation of absorption and radiative coefficients from first principles. By integrating several interpolation strategies to augment k-point sampling in reciprocal space, our code is accurate yet highly efficient. In addition to evaluation of the coefficients, our code is capable of intuitive analysis of carrier distribution, facilitating a deeper understanding of the microscopic mechanisms underlying the radiative coefficients. Utilizing GaAs as a prototypical example, we demonstrate how to employ our package to compute absorption and radiative coefficients and to investigate the key features in the electronic structure that give rise to these coefficients. Program SummaryProgram title: PyArcCPC Library link to program files:https://doi.org/10.17632/5x9g9bvhcv.1Licensing provisions: MIT licenseProgramming language: Python 3Nature of problem: Light absorption and radiative recombination processes in semiconductors critically impact the energy conversion efficiency of optoelectronic devices. Developing a method to calculate coefficients of the two processes based on first-principles theory is essential, which not only can help to obtain the key properties of those semiconductor materials and guide the device design, but also can unveil the underlying microscopic mechanisms.Solution method: PyArc, written in the Python language, implements first-principles methodologies for the computation of absorption and radiative coefficients of semiconductors based on Fermi's golden rule. This package takes the electronic eigenvalues and dipole matrix elements of a material computed from first-principles codes such as VASP as input. Dense k-point sampling for the Brillouin zone is achieved through efficient interpolation schemes implemented in our code to acquire well converged results. The functionality of cross-sectional visualization of carrier distribution in our code provides intuitive insights into the fundamental mechanism beneath the charge-carrier radiative recombination process.

General algorithm for characterization of donor-acceptor pair recombination processes in solid-state materials

Radiative recombination processes can occur in solid-state systems through the pairing of donor and acceptor defects of the lattice. Recently, donor-acceptor pairs (DAP) have been proposed as promising candidates for quantum applications, and their signature has been observed in emerging low-dimensional materials. Therefore, the identification of such processes is gaining interest and requires methods to efficiently and reliably characterize them. Here, we introduce a general algorithm to identify DAP processes starting from the experimental photoluminescence (PL) emission spectrum and basic material parameters, including the lattice structure and dielectric constant. The algorithm recognizes possible DAP transitions from the emission pattern in the spectrum and returns the characteristic energy of the DAP transition and the separation between the donor and acceptor sites. By testing the algorithm on the photoluminescence spectrum of hexagonal boron nitride (hBN), we show that our method is robust against experimental errors and adds new capabilities to the investigation toolbox of semiconductors and their optical properties.

Grain boundaries are not the source of Urbach tails in Cu(In,Ga)Se2 absorbers

The presence of Urbach tails in Cu(In,Ga)Se2 (CIGSe) absorbers has been identified as a limiting factor for the performance of the CIGSe solar cells. The tail states contribute to both radiative and non-radiative recombination processes, ultimately leading to a reduction in the open-circuit voltage and, consequently, decreasing the overall efficiency of CIGSe devices. Urbach tails result from structural and thermal disorders. The Urbach tails can be characterized by the Urbach energy, which is associated with the magnitude of the tail states. Within polycrystalline CIGSe absorbers, grain boundaries can be considered as structural disorder and, therefore, can potentially contribute to the Urbach tails. In fact, it has been proposed that the band bending at grain boundaries contribute significantly to the tail states. This study focuses on examining the correlation between Urbach tails and the band bending at the grain boundaries. The Urbach energies of the CIGSe samples are extracted from photoluminescence (PL) measurements, which reveal that the introduction of Sodium (Na) into the material can lead to a reduction in the Urbach energy, and an even further decrease can be achieved through the RbF post-deposition treatment. The band bending at the grain boundaries is investigated by Kelvin probe force microscopy measurements. A thorough statistical analysis of more than 340 grain boundaries does not show any correlation between Urbach tails and grain boundaries. We measure small band bending values at the grain boundaries, in the range of the thermal energy (26 meV at room temperature). Furthermore, our intensity dependent PL measurements indicate that Urbach tails are, at least in part, a result of electrostatic potential fluctuations. This supports the model that the introduction of alkali elements mainly decreases the magnitude of electrostatic potential fluctuations, resulting in a subsequent reduction in the Urbach energy.

Dynamics of femtosecond lasers and induced plasma in non-Kerr nonlinear transparent materials: Competing effects of electron–hole radiative recombinations and single-electron diffusions

Modern laser micromachining utilizes ultrashort optical fields, such as femtosecond lasers, to perform high-precision processings on solid materials, including cutting, drilling, ablation, polishing, and scripturing. Femtosecond laser-based material processings can induce a plasma of free electrons whose density depends on physical phenomena such as single-electron diffusions, multiphoton ionization, and electron–hole radiative recombinations. In this work, we examine the dynamics of femtosecond lasers in transparent materials with non-Kerr nonlinearity, taking into account the generation of an electron plasma. In these specific materials, a balance between the nonlinearity and the group-velocity dispersion of the optical medium can favor the formation of optical filaments propagating with a permanent shape by virtue of their “solitonic” features. We are interested in the effects of the competition between electron–hole radiative recombination and single-electron diffusion processes on the spatiotemporal profiles of the propagating optical field and of the plasma density. The model features a complex Ginzburg–Landau equation with an optical nonlinearity of a general saturable form and a Kth-order nonlinearity term accounting for K-photon ionization processes, coupled to a rate equation for the electron plasma density where the present terms are representing avalanche ionizations, single-electron diffusion, and electron–hole radiative recombination processes. The modulational-instability analysis suggests that the continuous-wave regime will be stabilized by strong electron–hole radiative recombination processes for a fixed value of the single-electron diffusion coefficient, a stability enhanced by an increase in K. In the nonlinear regime, numerical simulations of the model equations for different combinations of the nonlinearity-saturation exponents and different values of the photon number K unveil soliton train structures forming from the laser field propagation and the time evolution of the plasma density. These structures turn out to be either dissipative soliton trains in the absence of electron–hole radiative recombinations or soliton crystals when electron–hole radiative recombination processes are taken into consideration to balance the damping effect caused by single-electron diffusions.

Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor

Bistability in the current–voltage characteristics of semiconductor superlattices and quantum cascade laser structures has the potential for wide-ranging applications, particularly in sensing systems. However, the interdependency of applied bias and current injection in conventional two-terminal structures has led to complications in analysis and rendered the bistability phenomenon difficult to implement in practical applications. Here, we report a new kind of electronic bistability coupled to optical switching in a resonant tunneling bipolar superlattice transistor. This bistability manifests as sharp discontinuities in the collector current with extremely small variations of the applied voltage, which arise from unstable tunneling transmission across the hetero-barrier between the two-dimensional electron gas (2DEG) at the edge of the transistor base and the collector superlattice structure. The electronic transitions between high and low quantum mechanical transmissions are demonstrated to be caused by self-consistent variations of the internal electric field at the heterointerface between the 2DEG and the superlattice. They are also present in the base current of the three-terminal device and result in sharp switching of near-infrared spontaneous light emission output from an interband radiative recombination process with a peak emission wavelength of 1.58 μm. A comprehensive quantum mechanical theoretical model accounting for the self-consistent bistable tunneling transmission is in quantitative agreement with the experimental data. The measured peak transconductance sensitivity value of 6000 mS can be used in the highly sensitive detector and non-linear device applications.

Radiative and Nonradiative Recombination Processes in AlGaN Quantum Wells on Epitaxially Laterally Overgrown AlN/Sapphire from 10 to 500 K

Radiative and nonradiative recombination processes are investigated in the temperature range from 10 to 500 K for AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire templates. Time‐integrated photoluminescence (PL) spectroscopy under selective excitation conditions demonstrates that the decrease in the radiative recombination efficiency with increasing temperature is one of the causes of the thermal droop in AlGaN‐based deep‐ultraviolet (DUV) light‐emitting diodes. Time‐resolved PL spectroscopy indicates that not only the decreasing nonradiative recombination lifetime but increasing radiative recombination lifetime with increasing temperature contributes to the thermal droop. The temperature dependence of the radiative recombination lifetime is discussed, revealing that luminescence linewidth is a valuable criterion for designing efficient AlGaN‐based DUV emitters.

Dramatically Enhanced Light‐Emitting/Detecting Bifunction of CH3NH3PbBr3 Single‐Crystal Thin‐Film via Electrical Doping‐Induced Defects Passivation

AbstractHigh‐performance light‐emitting/detecting bifunctional optoelectronic devices based on halide perovskites are hindered by the less efficient carrier transport and radiative recombination processes. The density of defects (i.e., surface and bulk defects) is the main factor affecting carrier transport, radiation recombination, and determining performance in perovskites. Therefore, techniques to effectively regulate defects are highly needed. Here, a convenient and effective strategy, electrical doping, is proposed to flexibly regulate defect density, resulting in dramatically enhanced light‐emitting (i.e., fluorescence and carrier lifetime) and light‐detecting performance (i.e., hole mobility, photo‐responsivity, and photo‐detectivity) simultaneously. An improved carrier transport model in CH3NH3PbBr3 (MPB) single‐crystal thin‐film (SCTF) is proposed to elucidate the regulation mechanism of defects and carrier transport under electrical doping. These results show that the surface defect density can be effectively reduced by 47.49% under optimal electrical poling intensity (0.168 V µm−1), and photoluminescence intensity and carrier lifetime can be increased by 259% and 89.98%, respectively. Furthermore, planar MPB SCTF photodetector exhibits hole mobility increased by 14.97%, photo‐responsivity increased by 82.78%, and photo‐detectivity increased by 868% at 0.168 V µm−1. Particularly, a record photo‐detectivity of 3.53 × 1013 Jones is achieved under electrical doping. This study provides guidance for flexibly adjusting defect density and optimizing perovskite SCTFs light‐emitting/detecting bifunctional devices.

Self-absorption and investigation of excited carrier dynamics in two-dimensional perovskite scintillator

The PEA2PbBr4 scintillator exhibits varied performance in photoluminescence (PL) and radioluminescence (RL) profiles. PL in the reflectivity mode shows emission peaks at 414 and 434 nm, whereas PL and RL in the transmission mode exhibit only one peak at 434 nm. Temperature-dependent PL spectra measurements confirm that self-absorption contributes to this difference. PEA2PbBr4 displays decay times of 1.3 ns (90%) and 4.4 ns (10%) for PL and 11.5 ns (89%) and 47 ns (11%) for RL. To explain the distinct decay times, we construct two models for simulating laser and radiation excitation and investigate carrier dynamics using non-adiabatic molecular dynamics. Our findings suggest that the relatively long radiative recombination process of carriers contributes to the slow RL decay time.

ZnSeTe quantum dots modified with zinc chloride toward bright trap-state emission.

ZnSeTe quantum dots (QDs) attract growing interest owing to their low threats to health and the environment. They are widely applied as emitters in displays and lighting devices. Previous findings have indicated that inorganic halides are excellent candidates for surface ligands on QDs. By incorporating inorganic halides during the synthesis process, the photoluminescence (PL) intensity and quantum yield (QY) of QDs can be significantly enhanced. However, the alteration of surface states in QDs induced by zinc halide modification and the mechanism of formation of trap-state radiative recombination processes have been less discussed. Herein, we proposed a synthesis strategy for ZnSeTe/ZnSe/ZnSeS/ZnS core/shell/shell/shell QDs modified with ZnCl2, and by comparing the morphology and elemental composition of QDs with different amounts of ZnCl2 added, we revealed the regulatory mechanism of nanocrystal growth in the presence of ZnCl2. QDs with modification of ZnCl2 exhibited broad yellow fluorescence, distinct from the intrinsic blue emission. Through spectroscopic and surface ligand analyses, we attributed this yellow emission to the intermediate state energy levels caused by the defects on the surface. Finally, we used the QDs with broad linewidth emission to fabricate a simple white-light-emitting diode (WLED). This work provided new insights into the role of inorganic ligands and the use of a single emitting material in solid-state lighting devices.

Unveiling the red electroluminescence in LSMO-SRO thin film heterostructures

Herein, intense red electroluminescence (674 nm) in a La0.7Sr0.3MnO3(LSMO)-SrRuO3(SRO) thin films heterostructure obtained by RF-magnetron sputtering is reported for the first time. This novel phenomenon may open a new door in the field of optoelectronics and new generation devices based on multiferroic heterostructure. The structural properties were analyzed using grazing incidence x-ray diffraction demonstrating a rhombohedral structure for LSMO with (024) preferential orientation and an orthorhombic structure for SRO films with (121) preferential orientation. Raman and x-ray photoelectron spectroscopy (XPS) results demonstrated a mix of phases present in LSMO thin films. The thickness analysis was performed using scanning electron microscopy (SEM) in cross section and the thickness was found to be 123 nm and 49 nm for LSMO and SRO, respectively. XPS analysis for LSMO revealed that point defects associate to Mn cations and oxygen vacancies modify the total electrical conductivity and due to Mott transitions, suggest a p-type semiconductor behavior. For the SRO film, the XPS analysis demonstrated a change in the stoichiometry of the film surface, which provides a large amount of oxygen vacancies indicating a metal oxide transition with effects that involve multiple degrees of freedom (charge, spin, and lattice). The electrical behavior observed in the heterostructure corresponds to a metal-semiconductor junction showing a Schottky conduction mechanism in positive bias and a space charge limited conduction mechanism in negative bias. The red electroluminescence effect is discussed considering both a radiative recombination process occurred at the interface due to the presence of Mn2+ ions and an energy transfer mechanism assisted by the migration of the high amount of oxygen vacancies present in the interface.

A high-resolution asymmetric von Hamos spectrometer for low-energy X-ray spectroscopy at the CRYRING@ESR electron cooler

We present research program and project for high-resolution wavelength-dispersive spectrometer dedicated to low-energy X-ray spectroscopy at the electron cooler of the CRYRING@ESR storage ring, which is a part of the international Facility for Antiproton and Ion Research (FAIR) currently being built in Darmstadt. Due to the unique shape of the electorn-ion recombination X-ray source, resulting from the overlapping of the electron and ion beams in the electron cooler, the spectrometer can work in the specific asymmetric von Hamos (AvH) geometry. In order to completely eliminate the influence of Doppler effect on the measured X-ray energies, two asymmetric von Hamos spectrometers will be installed next to the dipole magnets on both sides of the electron cooler to detect blue/red (0°/180°) shifted X-rays, e.g. emitted in the radiative recombination (RR) process. The X-ray-tracing Monte-Carlo simulations show that the proposed AvH spectrometer will allow to determine with sub-meV precision, the low-energy X-rays (5–10 keV) emitted from stored bare or few-electron heavy ions interacting with cooling electrons. This experimental precision will enable accurate studies of the quantum electrodynamics (QED) effects in mid-Z H- and He-like ions.

Probing the electron trap-depth distribution in Sr4Al14O25:Eu2+,Dy3+

Sr4Al14O25:Eu2+,Dy3+ is a superluminous persistent luminescence phosphor. Owing to its intrinsic and extrinsic point defects, it tends to luminescence incessantly after excitation, in some cases doing so for as long as 20 h. We report analysis for the energy distribution of its electron traps. The study was done using thermoluminescence (TL) measured on a sample irradiated to 2 Gy at 20 °C. A glow curve measured at 1 °C/s shows two glow peaks at 64 °C (labelled as P1) and at 252 °C (P2). The variation of intensity of peak P1 as a function of heating rate is consistent with competing radiative and non-radiative recombination processes. When the heating rate is faster than 1 °C/s, non-radiative recombinations dominate and the luminescence efficiency drops sharply beyond 70 °C. The activation energy for thermal quenching is estimated to be 0.69±0.06 eV. Once corrected for thermal quenching, the glow curves show a secondary peak (P1A) on the high temperature end of P1. The so-called Tm-Tstop method shows that peaks P1 and P2 gradually shift towards high temperature with preheating temperature Tstop. Indeed, the peak position Tm of both peaks increases with irradiation temperature Tirr. Together, these results suggest that peaks P1 and P2 are each composed of closely spaced overlapping peaks. Analysis of the fractional area between a pair of glow curves measured from the sample irradiated at different temperatures (Tirr) shows that the trap distribution associated with peak P2 is Gaussian whereas that associated with peak P1 follows a non-Gaussian distribution. The activation energy of the electron traps responsible for P1 are estimated to be in the range 0.63–0.68 eV. On the other hand, the Gaussian distribution of trap energy levels responsible for peak P2 suggests that most of the traps have an activation energy of ∼1.58 eV.

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells.

Currently, GaN-based blue- and green-light-emitting devices have achieved successful applications in practice, while the luminescence efficiency of devices with longer wavelengths (such as yellow light) is still very low. Therefore, in this paper, the electroluminescence characterization of yellow-light-emitting InGaN/GaN multiple quantum wells (MQWs) with different In content in the last InGaN quantum well, which is next to the p-type GaN electrode layer, are investigated numerically to reveal a possible physical mechanism by which the different distribution of In content in the active region impacts the carrier capture and the light emission process in yellow InGaN/GaN MQWs. The simulation results show that at low injection currents, the luminescence efficiency of high-In-content yellow MQWs is enhanced, which can be ascribed to the enhanced radiative recombination process induced by the increased carrier concentration in the last InGaN quantum wells with promoted carrier capture ability. However, in the case of high injection condition, the luminescence efficiency of yellow MQWs deteriorates with increasing In content, i.e., the droop effect becomes remarkable. This can be ascribed to both significantly enhanced Auger recombination and electron leakage in the last InGaN quantum well, induced also by the promoted capture ability of charge carriers.

Impact of recombination mechanisms on the capacitance-voltage characteristics in bulk heterojunction organic solar cells

Low frequency Capacitance- voltage (C-V) measurements have been employed to investigate the effect of thickness variation of poly (3-hexylthiophene (P3HT) and fullerene [6,6],-phenyl-C61-butyric acid methyl ester(PCBM) based Bulk Heterojunction (BHJ) photo absorbing layer in inverted organic solar cell (OSC) configuration, ITO|ZnO|P3HT:PCBM|MoO3|Ag and are corelated with different recombination mechanisms. The normalized capacitance (CCgeom) with voltage curves at different P3HT: PCBM blend thicknesses such as 130, 100, 80 and 70 nm demonstrate an increase in peak height with thickness as well as the presence of negative capacitance (NC) beyond peak voltage for higher thicknesses. To understand both peak height variation and the occurrence of NC, a defect sensitive simulation study has been performed by employing the radiative and non-radiative recombination processes. Based on the analysis of simulation results we confirm the role of Langevin bimolecular recombination rate in determining the peak height with thickness; however, the presence of NC in C-V curves can be understood through a competition between the Langevin bimolecular, and trap assisted recombination rates. Study confirms that peak height reduces due to increase in the rate of Langevin bimolecular recombination, whilst the trap assisted recombination resurges the NC beyond peak voltage. Later, the utilities of D-D based1C23 vs V analysis to calculate built-in voltage (Vbi) have been performed for the experimental and simulation data at different thicknesses emphasizing the strength of this approach to characterize threshold voltage of organic diodes.

Temperature-dependent photoluminescence characteristics of 2D vertically oriented MoS2 microsheets grown by magnetron sputtering

2D V-MoS2 microsheets have excellent photoelectric application performances due to their unique growth arrangement. Here, we have grown 2D V-MoS2 microsheets by magnetron sputtering and investigated their optical properties by temperature-dependent (T-dependent) photoluminescence (PL) from 7 to 300 K. At 7 K and 300 K, the direct A and B exciton peaks and the indirect (I) exciton peak can be observed with PL broadening from 2D V-MoS2 microsheets. With the increase of temperature, the A and B exciton peaks have a red-shift, and the full width at half maximum (FWHM) becomes wider, whereas the intensities of the A and B exciton peaks exhibits different behaviors. The intensity of the A exciton peak reduces while the B exciton peak intensity is rising. Moreover, the I exciton peak obtains an obvious split, which is almost independent of temperature. The above phenomena are closely related to the temperature dependence of band structure, exciton transition and radiative recombination processes in 2D V-MoS2 microsheets. Our results enrich the understanding of exciton dynamics in 2D V-MoS2 microsheets and provide valuable information for the development of MoS2-based optoelectronic devices.

Studies on structural and optical characterization of Na:ZnS nanocomposites

In this work, we report the structural, morphological and optical characterization of pure and sodium (Na) mixed ZnS nanocomposites. The Na:ZnS nanocomposites were synthesized by the co-precipitation method using the Na2SO4. The powder XRD pattern reveals a mixed phase of cubic and hexagonal structure. The crystalline size was found to be ∼6 nm based on the full width at half maximum (FWHM) by using the Debye Scherrer formula. Moreover, the diffraction peaks were shifted towards a higher angle compared to pure ZnS. This can be due to the difference in the ionic radii of Na+ and Zn2+ ions. The SEM images show the spherical shape of nanocomposites. The UV-visible absorption spectra of pure and Na:ZnS show an absorption cut-off wavelength of 278 nm (4.46 eV) compared to bulk band gap of ZnS (3.78 eV). The blue shift can be attributed to the quantum confinement effect. In addition to that, the optical absorption increases with increasing Na concentration. The functional groups are identified by FTIR analysis. The photoluminescence (PL) study reveals the near band edge emission at 468 nm (2.64 eV). The broad and high relative intensity of defect level emission is observed in the lower energy side of the PL spectra. The intensity of luminescence increases with increasing Na concentration due to the radiative recombination process. The Raman spectra show the formation of nanocomposite through change in phonon frequency, structural disorder and width for LO phonon mode. A change of 1.7 cm−1 phonon width suggests the formation of disorder.

Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters

Aluminum gallium nitride [(Al,Ga)N] has gained significant attention in recent years due to its potential for highly efficient light emitters operating in the deep ultra-violet (UV) range (<280 nm). However, given that current devices exhibit extremely low efficiencies, understanding the fundamental properties of (Al,Ga)N-based systems is of key importance. Here, using a multi-scale simulation framework, we study the impact of alloy disorder on carrier transport, radiative and non-radiative recombination processes in a c-plane Al0.7Ga0.3N/Al0.8Ga0.2N quantum well embedded in a p–n junction. Our calculations reveal that alloy fluctuations can open “percolative” pathways that promote transport for the electrons and holes into the quantum well region. Such an effect is neglected in conventional and widely used transport simulations. Moreover, we find that the resulting increased carrier density and alloy induced carrier localization effects significantly increase non-radiative Auger–Meitner recombination in comparison to the radiative process. Thus, to suppress such non-radiative process and potentially related material degradation, a careful design (wider well, multi-quantum wells) of the active region is required to improve the efficiency of deep UV light emitters.