Quasi Two-dimensional Electron Research Articles

Quasi two-dimensional electron gas generated by laser irradiation at rutile TiO2 surface

Two-dimensional electron gas exhibits abundant physical properties that can facilitate new physics and novel device applications. Herein, we report on a systematic investigation on rutile TiO2-based quasi two-dimensional electron gas generated by laser irradiation. A transition from nonmagnetic insulator to ferromagnetic metal has been demonstrated after laser irradiation. A joint X-ray photoelectron spectroscopy and Raman spectroscopy analysis allows us to associate the metallic ferromagnetic state with the surface formation of oxygen vacancies and Ti3+. The universality of laser irradiation implies wide potential applicability to the fabrication of multifunctional oxide devices.

Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe

Two-dimensional electron gases (2DEGs) are at the base of current nanoelectronics because of their exceptional mobilities. Often the accumulation layer forms at polar interfaces with longitudinal optical (LO) modes. In most cases, the many-body screening of the quasi-2DEGs dramatically reduces the Fröhlich scattering strength. Despite the effectiveness of such a process, it has been recurrently proposed that a remote coupling with LO phonons persists even at high carrier concentration. We address this issue by perturbing electrons in an accumulation layer via an ultrafast laser pulse and monitoring their relaxation via time- and momentum-resolved spectroscopy. The cooling rate of excited carriers is monitored at doping level spanning from the semiconducting to the metallic limit. We observe that screening of LO phonons is not as efficient as it would be in a strictly 2D system. The large discrepancy is due to the remote coupling of confined states with the bulk. Our data indicate that the effect of such a remote coupling can be mimicked by a 3D Fröhlich interaction with Thomas-Fermi screening. These conclusions are very general and should apply to field effect transistors (FET) with high-κ dielectric gates, van der Waals heterostructures, and metallic interfaces between insulating oxides.

Solution of Self-Consistent Kohn–Sham and Poisson Equations for Quasi Two-Dimensional Electron Gas in the Accumulation Layer of Semiconductor with Nonparabolic Conduction Band

We generalize the method proposed previously for a self-consistent solution of the system of the Kohn–Sham and Poisson equations to the case of high density of electrons localized near the surface of a semiconductor due to size quantization of the electron spectrum in a potential well in the band banding region. We obtain a completely self-consistent iterative solution for a quasi two-dimensional electron gas in the accumulation layer at the surface of a semiconductor with a degenerate electron gas in the bulk. Both parabolic and non-parabolic energy spectra of conduction electrons are considered. For a parabolic conduction band, we obtain the spatial distributions of the electron density and electrostatic potential, as well as the energies of size-quantized levels and their dependence on the depth of the near-surface potential well. A significant decrease in the density of three-dimensional electrons was revealed in the region where the quasi two-dimensional electron gas occupied the accumulation layer. We calculated the dependencies of the excess electron surface density and the capacitance of the structure on the surface potential. The results are presented in dimensionless form that can be used to semi-quantitatively evaluate the parameters of accumulation layers by the known level of doping and the value of band bending. In the case of the nonparabolic conduction band, due to the finite bandgap width, the spectrum of quasi two-dimensional electron gas is obtained in the two-band Franz–Kane approximation by solving the eigenvalue problem for the new single-band equation of the effective-mass method. The density of states and the effective mass of electrons in the 2D subbands is found to increase linearly with energy. We have derived the expression that analytically approximates the calculated energy spectrum. The position of levels, the dispersion of energy spectrum, and the dependence of effective mass on energy, which were found for the size-quantized sub-bands, are in agreement with the published results for characteristics of quasi two-dimensional electrons at n-InAs surface that were directly measured by angle resolved photoelectron spectroscopy and magnetotunneling spectroscopy. Conditions are considered when the nonparabolicity of the conduction band enables quasi two-dimensional electrons to absorb the normally incident radiation due to intersubband transitions.

Investigation of an effect of electric field applied to ferroelectric film upon conductivity of quasi-two dimensional electron gas at the Ba0.8Sr0.2TiO3/LaMnO3 interface

We investigate the effect of electric field on the properties of quasi-two-dimensional electron gas at the interface between ferroelectric oxide and insulating oxide in Ba0.8Sr0.2TiO3/LaMnO3 (BSTO/LMO) heterostructure. Interface conductivity measurements were performed by a four-point probe method before and after the effect of electric field on Ba0.8Sr0.2TiO3 ferroelectric film. We have shown that when a non-uniform electric field is applied to a ferroelectric film, we can turn off the state with high conductivity. Whereas under the influence of a uniform electric field on the ferroelectric film, we can turn on the interface state of high conductivity.

Creation and control of quasi-two dimensional electron gas at yttrium aluminum oxides/strontium titanate heterointerfaces by spin coating

Despite of extensive researches about oxide heterointerfaces, preparing method and intrinsic mechanism are all challenging topics. Here, we generate a series of stable quasi two dimensional electron gases (q-2DEGs) at yttrium aluminum oxides/strontium titanate (YAO/STO) heterointerfaces by the spin coating for the first time. It is found that the thickness and the stoichiometry ratio are the key factors for the creation of q-2DEG, which is formed under the premise of thickness (about 81.1 ∼ 356.4 nm) and the rich-Al (Al:Y≥1:1). The underlying mechanism can be attributed to oxygen vacancies derived from the redox reaction between YAO film and STO substrate. In addition, the conductive behavior can be modulated by the light illumination and the value of photoinduced change reaches 153.7% at low temperature. This work paves a novel way to fabricate 2DEG massively and helpful for a deep understanding about the conductive mechanism of oxide heterostructures.

Effect of spin-orbit interaction on the vortex dynamics in LaAlO3/SrTiO3 interfaces near the superconducting transition

Controlling spin-orbit interaction and its effect on superconductivity has been a long-standing problem in two-dimensional inversion symmetry broken superconductors. An open challenge is to understand the role of various energy scales in shaping the complex phase diagram in these systems. From a combined experimental and theoretical study of resistance fluctuations and its higher order statistics, we propose a phase diagram for the superconducting phase in the magnetic-field--spin orbit interaction energy plane for the quasi-two dimensional electron gas at the interface of LaAlO$_3$/SrTiO$_3$ heterostructures. The relative variance of resistance fluctuations increases by few orders of magnitude below the spin-orbit field B$_{SO}$ and a non-Gaussian component to the fluctuations arises for fields below the upper critical field B$_{C2}$. Theoretical calculations show that the non-Gaussian noise predominantly arises due to percolative nature of the superconducting transition. We quantify the strength and the relative importance of the spin-orbit interaction energy, Zeeman energy and the pairing potential. Our work highlights the important role played by the interplay between these energy scales in framing the fascinating phases seen in two-dimensional inversion-symmetry-broken superconductors.

Coexistence of quasi-two dimensional electron and hole gas in a single tier Ca0.5TaO3/SrTiO3 oxide heterostructure

Quasi-two-dimensional electron gas has been realized at the polar-nonpolar interface of several insulating oxide heterostructures. However, its hole counterpart remains elusive. In an attempt to find a novel system that exhibits quasi-two-dimensional hole gas (q-2DHG) at the heterointerface, we adopt to materials search, first based on phenomenology followed by a comprehensive set of calculations based on first-principles density functional theory. Our studies show the epitaxial growth of cubic Ca0.5TaO3 on TiO2 terminated substrate display (q-2DHG). The hole gas emanates from the O 2p orbitals of the TiO2 layers of the substrate. On the other hand, an electron gas is formed at the (001) TaO2 top surface, thereby representing the heterostructure as a coupled quantum well system. The partial filling of the Ta 5dt2g conduction band indicates electron reconstruction, in agreement with the polar catastrophe model. Besides, a critical thickness of three monolayers is deduced from the calculations for the formation of q-2DHG in the Ca0.5TaO3/SrTiO3 heterostructure, which is consistent with the model prediction based on the modern theory of polarization. With both cubic systems, Ca0.5TaO3 and SrTiO3, having a similar underlying symmetry and minimal lattice mismatch, epitaxial growth with an abrupt interface can be well anticipated. Such a single-tier oxide heterostructure composed of separated confined hole-electron subsystems is expected to provide a platform to unravel exciting physics and also for functional devices related to oxide electronics.

Symmetry breaking at the (111) interfaces of SrTiO3 hosting a two-dimensional electron system

We used x-ray absorption spectroscopy to study the orbital symmetry and the energy band splitting of (111) LaAlO${_3}$/SrTiO${_3}$ and LaAlO${_3}$/EuTiO${_3}$/SrTiO${_3}$ heterostructures, hosting a quasi two-dimensional electron system (q2DES), and of a Ti-terminated (111) SrTiO${_3}$ single crystal, also known to form a q2DES at its surface. We demonstrate that the bulk tetragonal Ti-3d D${_4}$${_h}$ crystal field is turned into trigonal D${_3}$${_d}$ crystal field in all cases. The symmetry adapted a${_1}$${_g}$ and e${^\pi_g}$ orbitals are non-degenerate in energy and their splitting, \Delta, is positive at the bare STO surface but negative in the heterostructures, where the a${_1}$${_g}$ orbital is lowest in energy. These results demonstrate that the interfacial symmetry breaking induced by epitaxial engineering of oxide interfaces has a dramatic effect on their electronic properties, and it can be used to manipulate the ground state of the q2DES.

Interlayer charge transfer in n-modulation doped Al1−xGaxAs–GaAs single heterostructures

We studied the interlayer charge transfer in n-modulation doped Al1−xGaxAs–GaAs single heterostructures by photoluminescence and magnetotransport. Photoluminescence contributions from a high-mobility quasi-twodimensional electron system at the interface and GaAs bulk type excitons were analyzed, covering an excitation intensity range of nearly three orders of magnitude. The experiment was compared with selfconsistent band structure calculations that allowed to follow the charge redistribution in the sample. After sample cool down in the dark a parallel conducting quasi-twodimensional channel of low electron mobility appeared in the Al1−xGaxAs-layer, that gained in density up to a saturation value. There was only little interaction between the Al1−xGaxAs and GaAs sides in the persistent regime and a reduction of the depletion charge in the GaAs could largely account for the interface channel density enhancement. Contrary, the negative photoeffect present during continuous illumination strongly depends on the interaction between the interface and the parallel channel, which serves as a temporary sink for excess charges from the GaAs side. When the illumination is switched off the parallel channel acts as a source and the sample essentially returns to the prior illumination state of saturation.

Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced quasi two-dimensional electrons between 10 s pulsed growth n-doped InGaAs epilayers to improve both carrier concentration and mobility of structure by applying pulsed growth and doping methods towards increasing the Si dopant concentration in InGaAs. Additionally, the V/III ratio optimization under fixed group III source flow has been investigated with this new method to understand the effects on both crystalline quality and electrical properties of n-InGaAs epilayers. Finally, we have obtained high crystalline quality of n-InGaAs epilayers grown by 10 s pulsed as a contact layer with 2.8 × 1019 cm−3 carrier concentration and 1530 cm2 V−1 s−1 mobility.

Flat Optical Conductivity in ZrSiS due to Two-Dimensional Dirac Bands.

ZrSiS exhibits a frequency-independent interband conductivity σ(ω)=const(ω)≡σ_{flat} in a broad range from 250 to 2500 cm^{-1} (30-300meV). This makes ZrSiS similar to (quasi-)two-dimensional Dirac electron systems, such as graphite and graphene. We assign the flat optical conductivity to the transitions between quasi-two-dimensional Dirac bands near the Fermi level. In contrast to graphene, σ_{flat} is not universal but related to the length of the nodal line in the reciprocal space, k_{0}. Because of spin-orbit coupling, the discussed Dirac bands in ZrSiS possess a small gap Δ, for which we determine an upper bound max(Δ)=30 meV from our optical measurements. At low temperatures the momentum-relaxation rate collapses, and the characteristic length scale of momentum relaxation is of the order of microns below 50K.

Exact exchange: A pathway for a density functional theory of the integer quantum Hall effect

It is shown here that the exact-exchange (EE) formalism provides a natural and rigorous approach for a density functional theory (DFT) of the integer quantum Hall effect (IQHE). Application of a novel EE method to a quasi–two-dimensional electron gas (q2DEG) subjected to a perpendicular magnetic field leads to the following main findings. i) the microscopic exchange energy functional of the IQHE has been obtained, whose main feature being that it minimizes with a discontinuous derivative at every integer filling factor ν; ii) an analytical solution is found for the magnetic-field dependent EE potential, in the one-subband regime; iii) as a consequence of i), the EE potential display sharp discontinuities at every integer ν; and iv) the widely used local spin density approximation (LSDA) is strongly violated for filling factors close to integer values.

Patterning the two dimensional electron gas at the LaAlO3/SrTiO3 interface by structured Al capping

We demonstrate an approach for patterning a quasi-two dimensional electron gas (q-2DEG) at the interface of LaAlO3 (LAO) and SrTiO3 (STO) utilizing a structured Al capping layer. The capping of Al enables the formation of q-2DEG at the interface of 1–3 unit cells (uc) of LAO on STO, which was originally insulating before capping. The properties of the q-2DEG induced by the Al capping layer are essentially the same as those of q-2DEG without Al. Therefore, we can pattern q-2DEG by simply patterning the Al film on LAO (2 or 3 uc)/STO using a one-step liftoff process. Our approach circumvents the difficulty of direct patterning of oxide materials and provides a simple and robust patterning method for future device applications based on complex oxide interfaces.

Spin galvanic effect at the conducting SrTiO3 surfaces

The (001) surface of SrTiO3 were transformed from insulating to conducting after Ar+ irradiation, producing a quasi two-dimensional electron gas (2DEG). This conducting surface layer can introduce Rashba spin orbital coupling due to the broken inversion symmetry normal to the plane. The spin splitting of such a surface has recently been demonstrated by magneto-resistance and angular resolved photoemission spectra measurements. Here, we present experiments evidencing a large spin-charge conversion at the conducting surface. We use spin pumping to inject a spin current from NiFe film into the surface, and measure the resulting charge current. The results indicate that the Rashba effect at the surface can be used for efficient charge-spin conversion. The conversion efficiency measured by the ratio of the spin flow density to the charge flow density is about 0.23 nm. This value is on the same order as the interfaces in metallic multilayers and 2DEG of LaAlO3/SrTiO3. In this point of view, the conducting SrTiO3 surface provides another solution for oxide spintronics.

Mixed valence as a necessary criteria for quasi-two dimensional electron gas in oxide hetero-interfaces

Abstract The origin of quasi-two dimensional electron gas at the interface of polar-nonpolar oxide hetero-structure, such as LaAlO3/SrTiO3, is debated over electronic reconstruction and defects/disorder models. Common to these models is the partial valence transformation of substrate Ti ions from its equilibrium 4 + state to an itinerant 3 + state. Given that the Hf ions have a lower ionization potential than Ti due to the 4 f orbital screening, one would expect a hetero-interface conductivity in the polar-nonpolar LaAlO3/SrHfO3 system as well. However, our first principles calculations show the converse. Unlike the Ti 3 + − Ti 4 + valence transition which occur at a nominal energy cost, the barrier energy associated with its isoelectronic Hf 3 + − Hf 4 + counterpart is very high, hence suppressing the formation of quasi-two dimensional electron gas at LaAlO3/SrHfO3 hetero-interface. These calculations, therefore, emphasize on the propensity of mixed valence at the interface as a necessary condition for an oxide hetero-structure to exihibit quasi two-dimensional electron gas.

Structure and ferromagnetic instability of the oxygen-deficientSrTiO3surface

SrTiO$_3$ (STO) is the substrate of choice to grow oxide thin-films and oxide heterojunctions, which can form quasi-two-dimensional electronic phases that exhibit a wealth of phenomena, and, thus, a workhorse in the emerging field of metal-oxide electronics. Hence, it is of great importance to know the exact character of the STO surface itself under various oxygen environments. Using density functional theory within the spin generalized gradient approximation we have investigated the structural, electronic and magnetic properties of the oxygen-deficient STO surface. We find that the surface oxygen vacancies order in periodic arrays giving rise to surface magnetic moments and a quasi two-dimensional electron gas in the occupied Ti 3-d orbitals. The surface confinement, the oxygen-vacancy ordering, and the octahedra distortions give rise to spin-polarized $t_{2g}$ dispersive sub-bands; their energy split near the Brillouin zone center acts as an effective Zeeman term, which, when we turn on a Rashba interaction, produces bands with momentum-spin correlations similar to those recently discovered on oxygen deficient STO surface.

English

English

Magnetism in the Interfaces of the Sandwiched PbTiO\(_3\)/LaAlO\(_3\)/SrTiO\(_3\) Hetero-structure

We investigate the effect of PbTiO3 on the LaAlO\(_3\)/SrTiO\(_3\) hetero-structure by density functional theory, where the asymmetrysandwich not only forms a quasi-two dimensional electron gas but also reveals a ferromagnetic state in the TiO\(_2\) interfaces. Itis found out that magnetic moments of TiO\(_2\) interface layers are around 0.18 \(\mu_B\) while they are mostly negligible in the pure LaAlO\(_3\)/SrTiO\(_3\) system. Even though magnetic moments are mainly produced by Ti t2g orbitals, oxygen plays a key role in the formation of the ferromagnetic state since polar distortions primarily occur in oxygen positions of the SrTiO\(_3\) and PbTiO\(_3\) sides in opposite directions.

Transport properties and seebeck coefficient of the quasi-twodimensional electron gas in ALP quantum wells

We consider the mobility of a quasi-twodimensional electron gas in a GaP/AlP/GaP quantum well with a valley degeneracy g 1   for quantum well width L < Lc = 45.7 Å and a valley degeneracy of g 2   for quantum well width L > Lc = 45.7 Å. We calculate the mobility as a function of electron density for interface-roughness and impurity scattering with using different approximations for the local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of [16]. We also study the dependence of resistivity on temperature and parallel magnetic field. The Seebeck coefficient as a function of electron concentration and quantum well width are also calculated.

Temperature dependent symmetry to asymmetry transition in wide quantum wells

Quasi-two dimensional electron systems exhibit peculiar transport effects depending on their density profiles and temperature. A usual two dimensional electron system is assumed to have a δ like density distribution along the crystal growth direction. However, once the confining quantum well is sufficiently large, this situation is changed and the density can no longer be assumed as a δ function. In addition, it is known that the density profile is not a single peaked function, instead can present more than one maxima, depending on the well width. In this work, the electron density distributions in the growth direction considering a variety of wide quantum wells are investigated as a function of temperature. We show that the double peak in the density profile varies from symmetric (similar peak height) to asymmetric while changing the temperature for particular growth parameters. The alternation from symmetric to asymmetric density profiles is known to exhibit intriguing phase transitions and is decisive in defining the properties of the ground state wavefunction in the presence of an external magnetic field, i.e from insulating phases to even denominator fractional quantum Hall states. Here, by solving the temperature and material dependent Schrödinger and Poisson equations self-consistently, we found that such a phase transition may be elaborated by taking into account direct Coulomb interactions together with temperature.