Mixed valence as a necessary criteria for quasi-two dimensional electron gas in oxide hetero-interfaces

Abstract

Abstract The origin of quasi-two dimensional electron gas at the interface of polar-nonpolar oxide hetero-structure, such as LaAlO3/SrTiO3, is debated over electronic reconstruction and defects/disorder models. Common to these models is the partial valence transformation of substrate Ti ions from its equilibrium 4 + state to an itinerant 3 + state. Given that the Hf ions have a lower ionization potential than Ti due to the 4 f orbital screening, one would expect a hetero-interface conductivity in the polar-nonpolar LaAlO3/SrHfO3 system as well. However, our first principles calculations show the converse. Unlike the Ti 3 + − Ti 4 + valence transition which occur at a nominal energy cost, the barrier energy associated with its isoelectronic Hf 3 + − Hf 4 + counterpart is very high, hence suppressing the formation of quasi-two dimensional electron gas at LaAlO3/SrHfO3 hetero-interface. These calculations, therefore, emphasize on the propensity of mixed valence at the interface as a necessary condition for an oxide hetero-structure to exihibit quasi two-dimensional electron gas.