Quantum Well Lasers Research Articles

Theoretical analysis and modelling of degradation for III–V lasers on Si

InAs/GaAs quantum-dot (QD) lasers offer a promising method to realise Si-based on-chip light sources. However, the monolithic integration of III–V materials on Si introduces a high density of threading dislocations (TDs), which limits the performance of such a laser device in terms of device lifetime. Here, we proposed a kinetic model including a degradation term and a saturation term to simulate the degradation process caused by the TDs in the early stage of laser operation. By using a rate equation model, the current density in the wetting layer, where the TDs concentrate, is calculated. We compared the rate of degradation of QD lasers with different cavity lengths and of quantum-well lasers, where both are directly grown on Si substrates, by varying the fitting parameters in the calculation of current densities in the kinetic model.

Perspectives on the Development of Metalorganic Vapor Phase Epitaxy for III-V Optoelectronic Devices

The mainstream production of optoelectronic and electronic devices based on epitaxial III-V compound semiconductor materials largely employs metalorganic vapor phase epitaxy, a process first demonstrated for devices in the 1970’s. For this special issue in honor of Prof. P. Daniel Dapkus, this paper first briefly reviews his early contributions that spearheaded the interest of MOVPE as a III-V device epitaxy process. Next, the paper discusses MOVPE reactor development in the 1980’s, which at the time was one of the key challenges in establishing MOVPE technology as a reliable epitaxy manufacturing process. The approach combined physical modeling and numerical simulations of reactor processes followed by materials and device demonstrations. Highly uniform performance metrics of AlGaAs/AlGaAs quantum-well diode lasers and two-dimensional monolithic surface-emitting lasers were demonstrated with excellent run-to-run reproducibility. This foundational approach advanced efforts to standardize reactors and subsequent scaling for high-throughput production.

Stimulated Emission up to 2.75 µm from HgCdTe/CdHgTe QW Structure at Room Temperature.

Heterostructures with thin Hg(Cd)Te/CdHgTe quantum wells (QWs) are attractive for the development of mid-infrared interband lasers. Of particular interest are room-temperature operating emitters for the short-wavelength infrared range (SWIR, typically defined as 1.7–3 μm). In this work, we report on the observation of stimulated emission (SE) in the 2.65–2.75 µm wavelength range at room temperature in an optically pumped HgCdTe QW laser heterostructure. We study a series of three samples with lengths ranging from 2.5 to 7 mm and discuss the effects related to the non-uniformity of the excitation beam profile. SE threshold intensity and the magnitude of pump-induced carrier heating are found to be effectively dependent on the chip size, which should be accounted for in possible designs of HgCdTe-based optical converters. We also pay attention to the problem of active medium engineering in order to push the SE wavelength towards the 3–5 µm atmospheric window and to lower the SE threshold.

Direct Modulation Performance of Quantum Well Semiconductor Laser Diodes Operating in Multimode

A theoretical investigation has been carried out for both the direct sinusoidal modulation and associated noise performance of InGaN based quantum well (QW) semiconductor laser diodes (LDs) operating in multimode. The study is based on the QW lasers with two separate quantum wells with different carrier injection ratios. A model of multimode rate equations is developed by taking into account both symmetric and asymmetric cross-gain saturation. Numerical simulation shows that the mode partition effect exists in both the modulated and unmodulated LDs. From modulation at microwave frequency, highly synchronized oscillation of the modes resulting periodic pulse-like output is observed that contains peaks at modulation frequency and its harmonics. Associated total RIN and modal RIN values suppress with the modulation index. The simulation results have well correspondence with the previously reported theoretical and experimental findings. DUJASE Vol. 6 (2) 94-98, 2021 (July)

Wavelength-modulation spectroscopy in the mid-infrared for temperature and HCl measurements in aluminum-lithium composite-propellant flames

This work presents the design, development, and application of a laser-absorption-spectroscopy diagnostic capable of providing quantitative, time-resolved measurements of gas temperature and HCl concentration in flames of metallized composite propellants containing ammonium perchlorate (AP) and hydroxyl-terminated polybutadiene (HTPB). This diagnostic utilizes a quantum-well distributed-feedback diode laser emitting near 3.27 μm to measure the absorbance spectra of HCl using a scanned-wavelength-modulation-spectroscopy technique that is insensitive to non-absorbing transmission losses caused by metal particulates in the flame. This diagnostic was applied to characterize the spatial and temporal evolution of temperature and HCl mole fraction in small-scale flames of AP-HTPB composite propellants containing either an aluminum-lithium alloy or micron-scale aluminum. Experiments were conducted at 1 and 10 atm. At both pressures, the flame temperature of the aluminum-lithium propellant, on a time-averaged basis, was 80 to 200 K higher than that of the aluminum propellant (depending on location in the flame) indicating more complete combustion. In addition, the mole fraction of HCl in the aluminum-lithium propellant flame reached values 65–70% lower than the conventional aluminum-propellant flame at the highest measurement location in the flame. The measurements at both pressures showed similar trends in the reduction of HCl in the aluminum-lithium propellant flame but at elevated pressures this occurred on a length scale nearly an order of magnitude smaller than the flame at atmospheric pressure. The results presented further support that the use of an aluminum-lithium alloy is effective at reducing HCl produced by the propellant flame without compromising performance, thereby making it an attractive additive for solid rocket propellants.

Four-wave mixing in 1.3 μm epitaxial quantum dot lasers directly grown on silicon

This work compares the four-wave mixing (FWM) effect in epitaxial quantum dot (QD) lasers grown on silicon with quantum well (QW) lasers. A comparison of theory and experiment results shows that the measured FWM coefficient is in good agreement with theoretical predictions. The gain in signal power is higher for p-doped QD lasers than for undoped lasers, despite the same FWM coefficient. Owing to the near-zero linewidth enhancement factor, QD lasers exhibit FWM coefficients and conversion efficiency that are more than one order of magnitude higher than those of QW lasers. Thus, this leads to self-mode locking in QD lasers. These findings are useful for developing on-chip sources for photonic integrated circuits on silicon.

Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness

Wide-bandgap III-nitride heterostructures are required for a variety of device applications. However, this alloy system has a large lattice constant and thermal expansion coefficient mismatch that limits the alloy composition and layer thickness for many heteroepitaxial device structures. Consequently, various methods have been devised to allow the heteroepitaxial growth of AlInGaN heterostructures to accommodate this inherent strain. In this work, we describe a non-planar-growth approach that enables the deposition of crack-free high-Al-mole-fraction AlxGa1−xN on patterned GaN/sapphire templates and bulk GaN substrates with large-area mesas. We have studied the effects of the patterned mesa width, the mesa etch depth, and the gap between the mesas on the heteroepitaxy of AlxGa1−xN superlattices with an average Al molar fraction 0.11 < x¯ < 0.21 and non-planar overgrowth growth thicknesses up to 3.5 μm. Similar to the planar growth approach, increasing the thickness and Al mole fraction of the AlxGa1−xN superlattices leads to surface cracking when exceeding the critical layer thickness. However, limiting the mesa dimension in one direction enables strain mitigation and drastically increases the critical layer thickness. Additionally, larger etch depths of the mesas increase the Al alloy composition and thickness for crack-free AlGaN heteroepitaxy whereas the gap in between the mesas seems to have no crucial influence. We demonstrate that the Al alloy composition and layer thicknesses of such heterostructures can be increased far beyond the critical layer thickness for planar growth and demonstrate the growth of a crack-free full AlxGa1−xN/GaN quantum-well laser heterostructure designed for operation at ∼370 nm.

Criteria for the Use of Approximations for Full Band Structures of Compound III–V Semiconductor Quantum Wells

The calculation of material gain and performance characteristics of compound III–V semiconductor quantum well (QW) lasers has been developed, incorporating various approximations for the band structure. As the accuracy and sophistication of the band structure are increased, the computational time and mathematical complexity rise accordingly. The modeling of QW lasers is examined to determine the criteria for the accurate use of a parabolic approximation for the full band structure in the calculation of the material gain and performance characteristics of a conventional III–V QW. A comparison of the cosine approximation of band structure in highly mismatched alloys is also presented.

Effect of Ridge Width on the Lasing Characteristics of Triangular and Rectangular InAs/In0.53Ga0.47As Quantum Well Lasers

The lasing characteristics of InP-based InAs/In0.53Ga0.47As quantum well (QW) lasers with different ridge widths are investigated. Two groups of lasers are grown for comparison, one with active triangular QW regions and the other with rectangular QW regions. Their output powers, characteristic temperatures (T0), external differential quantum efficiencies (ηd) and junction temperatures (Tj) are analyzed and compared. The parameter of ridge width is found to play an important role in the performance of the lasers. In triangular QW lasers, by broadening the ridge width from 8 to 12 μm, output power and ηd of the lasers are decreased for the temperature range of 100–320 K due to heating effect. But by broadening the ridge width from 8 to 100 μm in rectangular QW lasers, output power has about 3.5 time increase at 100 K and ηd also has a little increase for temperatures from 100 to 180 K due to much larger emission area and much faster heat dissipation. Tj, the real temperature of the active region, is also found to have accelerated increase at high injection current and heat sink temperature. Besides, compared to the rectangular QW laser of the same ridge width, the improved thermal performance of triangular QW laser is also demonstrated.

A Performance Comparison Between Quantum Dash and Quantum Well Fabry-Pérot Lasers

We directly compare the performance of 1.55 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> Fabry-Pérot lasers using quantum well (QW) and quantum dash gain regions. Other than the gain medium the designs were identical, grown in the same growth system, and processed at the same time. The static laser performance (light-current and spectral) were similar for both gain materials but the intensity and phase noise characteristics of the dash based lasers were significantly better. This was attributed to the self mode-locking of the dash lasers that was not observed for the QW lasers. This reduction in noise allowed individual lasing lines from the Fabry-Pérot dash lasers to be used for data transmission using high order modulation schemes, with quadrature phase-shift keying (QPSK) demonstrated at a symbol rate of 32GBaud. This performance could not be achieved using the equivalent QW based laser.

Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)

Monolithically combining silicon nitride ( S i N x ) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ∼ 400 − 4000 n m . With the development of nitride, arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD) active regions, the wavelength palette of integrated III-V lasers on Si currently spans 400 nm to 11 µm, with a crucial gap in the red-wavelength regime of 630–750 nm. Here, we demonstrate red I n 0.6 G a 0.4 P QW and far-red InP QD lasers monolithically grown on CMOS-compatible Si (001) substrates with continuous-wave operation at room temperature. A low-threshold current density of 550 A / c m 2 and 690 A / c m 2 with emission at 680–730 nm was achieved for QW and QD lasers on Si, respectively. This work represents a step toward the integration of visible red lasers on Si, allowing the utilization of integrated photonics for applications including biophotonic sensing, quantum computing, and near-eye displays.

Impact of potential fluctuation on temperature dependence of optical gain characteristics in InGaN quantum-well laser diodes

The effects of the potential fluctuation (alloy compositional fluctuation and/or well-width fluctuation) in InGaN quantum wells (QWs) on the characteristics of InGaN-QW lasers, have been theoretically investigated, and it is found that the temperature dependence of the lasing threshold is strongly affected by the degree of fluctuation. Furthermore, we have experimentally measured the temperature dependence of stimulated-emission threshold excitation power density in photo-pump measurements, and have observed the predicted behavior of temperature dependence. It is considered that the temperature dependence of the lasing threshold could be used for the evaluation of the degree of the potential fluctuation in active layers of InGaN QW lasers.

Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure

Strain and band gap engineered epitaxial germanium (ε-Ge) quantum-well (QW) laser structures were investigated on GaAs substrates theoretically and experimentally for the first time. In this design, we exploit the ability of an InGaAs layer to simultaneously provide tensile strain in Ge (0.7–1.96%) and sufficient optical and carrier confinement. The direct band-to-band gain, threshold current density (Jth), and loss mechanisms that dominate in the ε-Ge QW laser structure were calculated using first-principles-based 30-band k·p electronic structure theory, at injected carrier concentrations from 3 × 1018 to 9 × 1019 cm–3. The higher strain in the ε-Ge QW increases the gain at higher wavelengths; however, a decreasing thickness is required by higher strain due to critical layer thickness for avoiding strain relaxation. In addition, we predict that a Jth of 300 A/cm2 can be reduced to <10 A/cm2 by increasing strain from 0.2% to 1.96% in ε-Ge lasing media. The measured room-temperature photoluminescence spectroscopy demonstrated direct band gap optical emission, from the conduction band at the Γ-valley to heavy-hole (0.6609 eV) from 1.6% tensile-strained Ge/In0.24Ga0.76As heterostructure grown by molecular beam epitaxy, is in agreement with the value calculated using 30-band k·p theory. The detailed plan-view transmission electron microscopic (TEM) analysis of 0.7% and 1.2% tensile-strained ε-Ge/InGaAs structures exhibited well-controlled dislocations within each ε-Ge layer. The measured dislocation density is below 4 × 106 cm–2 for the 1.2% ε-Ge layer, which is an upper bound, suggesting the superior ε-Ge material quality. Structural analysis of the experimentally realistic 1.95% biaxially strained In0.28Ga0.72As/13 nm ε-Ge/In0.28Ga0.72As QW structure demonstrated a strained Ge/In0.28Ga0.72As heterointerface with minimal relaxation using X-ray and cross-sectional TEM analysis. Therefore, our monolithic integration of a strained Ge QW laser structure on GaAs and ultimately the transfer of the process to the Si substrate via an InGa(Al)As/III–V buffer architecture would provide a significant step toward photonic technology based on strained Ge on a Si platform.

Non-polar GaN/AlGaN quantum-well polariton laser at room temperature

We demonstrate room temperature (RT) polariton lasing in an all-dielectric microcavity containing non-polar III-nitride quantum wells (QWs) as active media. The microcavity is fabricated using the photo-electrochemical etching method, by which an optimally grown $m$-plane III-nitride active region is detached from the substrate in the form of a membrane, which is subsequently inserted between two $\mathrm{Si}{\mathrm{O}}_{2}/{\mathrm{Ta}}_{2}{\mathrm{O}}_{5}$ distributed Bragg reflectors, with 4 and 10 pairs for the top and bottom mirrors, respectively. The active region consists of 25 $\mathrm{GaN}/{\mathrm{Al}}_{0.1}{\mathrm{Ga}}_{0.9}\mathrm{N}$ (5 nm/3 nm) QWs. The produced microcavities exhibit two closely spaced polarization-resolved lower polariton branches at RT, in line with the selection rules of the non-polar orientation, having a Rabi splitting of 62 and 72 meV in the $E\ensuremath{\parallel}a$ and $E\ensuremath{\parallel}c$ polarizations, respectively. In a positively detuned 3\ensuremath{\lambda}/2-thick microcavity, polariton lasing is observed at ambient conditions in the $E\ensuremath{\parallel}a$ polarization, with a threshold \ensuremath{\sim} 3 times lower than previous state of the art, despite the use of a relatively weak top reflector.

Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance

A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.

Fast dynamics of low-frequency fluctuations in a quantum-dot laser with optical feedback.

We experimentally investigate the complex dynamics of a multi-mode quantum-dot semiconductor laser with time-delayed optical feedback. We examine a two-dimensional bifurcation diagram of the quantum-dot laser as a comprehensive dynamical map by changing the injection current and feedback strength. We found that the bifurcation diagram contains two different parameter regions of low-frequency fluctuations. The power-dropout dynamics of the low-frequency fluctuations are observed in the sub-GHz region, which is considerably faster than the conventional low-frequency fluctuations in the MHz region. Comparing the dynamics of quantum-dot laser with those of single- and multi-mode quantum-well semiconductor lasers reveals that the fast low-frequency fluctuation dynamics are unique characteristics of quantum-dot lasers with time-delayed optical feedback.

Solid-state block-based pulsed laser illuminator for single-photon avalanche diode detection-based time-of-flight 3D range imaging

A laser diode illuminator for single-photon avalanche diode detection-based pulsed time-of-flight 3D range imaging is presented. The illuminator supports a block-based illumination scheme and consists of a 16-element custom-designed common anode quantum-well laser diode bar working in the enhanced gain switching regime and lasing at ∼810 nm. The laser diode elements are separately addressable and driven with gallium nitride drivers, which produce current pulses with a width of ∼2 ns; the current pulse amplitude was estimated from the supply voltage (90 V) as 5 to 10 A. Cylindrical optics are used to produce a total illumination field-of-view of 40 × 10 deg2 (full width at half maximum) in 16 separately addressable blocks. With a laser pulsing frequency of 256 kHz and laser pulse energy of ∼8.5 nJ, the average optical illumination power of the transmitter is 2.2 mW.

Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization

We have demonstrated a record short wavelength lasing at 244.63 nm with TE dominant polarization from GaN quantum wells (QWs) at room temperature (RT). The optical threshold of 310 kW/cm2 is comparable to state-of-the-art AlGaN QW lasers at similar wavelengths. The sample was grown on the AlN/sapphire template pesudomorphically. X-ray diffraction (XRD) shows unambiguous higher-order satellite peaks indicating a sharp interface amid the active region. The excitonic localization was revealed and studied by the photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy at temperatures ranging from 15 K to RT. At 15 K, the multiple-component PL decay curves with the decay time varying from 62.6 to 2.77 ns at different energies confirmed the localized excitons. The peak energy of the temperature-dependent PL spectra exhibited the “S-shape” behavior; and the weak exciton localization with a small localization energy of 14.3 meV was observed. Therefore, even in the low temperature region, the escape possibility of excitons increased as the temperature rose. As a result, the fwhm of the emission spectra changed significantly when the temperature was below 150 K. Above 150 K, the PL decay shape changed from the two-component exponential decay to the single exponential decay, indicating complete delocalization of excitons. The work demonstrates the weak localization and thus smooth interface in the GaN/AlN active region, which are desirable for DUV lasers operating at RT.

Feedback-induced locking in semiconductor lasers with strong amplitude-phase coupling

The influence of optical feedback on semiconductor lasers has been a widely studied field of research due to fundamental interests as well as the optimization of optical data transmission and computing. Recent publications have shown that it is possible to induce a periodic pulsed like output in quantum-dot and quantum-well laser diodes utilizing the locking of the external cavity modes and the relaxation oscillation frequency. We present an in-depth analysis of this effect. We choose submonolayer quantum dots as a gain system, as these provide a relatively strong amplitude-phase coupling, which has proven to be very beneficial for these locking effects to occur. Introducing a new theoretical model we can correctly reproduce the essential features of the gain system and validate them by comparison to our experimental results. From this starting point we can further explore how the staircase behavior of the oscillation frequency with increasing pump current can be influenced by changing various laser parameters. The staircase behavior is induced by a reordering of the Hopf bifurcations giving birth to the regular pulsed-like oscillations.

Design of InSb-based quantum-well laser with emission line at 5.6 μm

This work reports on the optimization of factors affecting the performance of InSb-based quantum-well (QW) laser. The QW laser designs and its parameters are improved using physical modeling and simulation. The designed QWs can emit light at a range of 5.40–6.48 µm. The InAlSb is used as barrier between InSb active region and InAlAs cladding layer. To optimize the laser performance, the influence of Al concentration variation in barrier and cladding layers, as well as thickness of the active region on the QW, is investigated. The optical and electro-optical characteristics are compared with related experimental results. The output power, spontaneous emission and peak intensities versus injected current of the proposed QW structures demonstrate good similarity with similar reported grown samples. It is demonstrated that Auger recombination is truly reflected in the proposed QWs.