Abstract
This work reports on the optimization of factors affecting the performance of InSb-based quantum-well (QW) laser. The QW laser designs and its parameters are improved using physical modeling and simulation. The designed QWs can emit light at a range of 5.40–6.48 µm. The InAlSb is used as barrier between InSb active region and InAlAs cladding layer. To optimize the laser performance, the influence of Al concentration variation in barrier and cladding layers, as well as thickness of the active region on the QW, is investigated. The optical and electro-optical characteristics are compared with related experimental results. The output power, spontaneous emission and peak intensities versus injected current of the proposed QW structures demonstrate good similarity with similar reported grown samples. It is demonstrated that Auger recombination is truly reflected in the proposed QWs.
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