Abstract
The lasing characteristics of InP-based InAs/In0.53Ga0.47As quantum well (QW) lasers with different ridge widths are investigated. Two groups of lasers are grown for comparison, one with active triangular QW regions and the other with rectangular QW regions. Their output powers, characteristic temperatures (T0), external differential quantum efficiencies (ηd) and junction temperatures (Tj) are analyzed and compared. The parameter of ridge width is found to play an important role in the performance of the lasers. In triangular QW lasers, by broadening the ridge width from 8 to 12 μm, output power and ηd of the lasers are decreased for the temperature range of 100–320 K due to heating effect. But by broadening the ridge width from 8 to 100 μm in rectangular QW lasers, output power has about 3.5 time increase at 100 K and ηd also has a little increase for temperatures from 100 to 180 K due to much larger emission area and much faster heat dissipation. Tj, the real temperature of the active region, is also found to have accelerated increase at high injection current and heat sink temperature. Besides, compared to the rectangular QW laser of the same ridge width, the improved thermal performance of triangular QW laser is also demonstrated.
Highlights
Semiconductor lasers are desirable for applications of molecular spectroscopy, gas sensing (Tittel et al, 2003; Zhang et al 2021a; Zhang et al 2021b) and medical diagnostics (Jean and Bende 2003), etc
The ridge width dependence of the lasing characteristics of InAs/InP quantum well (QW) lasers are investigated by experiments, where a clear influence is observed
The output power is 3.5 times in the 100-μm ridge laser compared to that of the 8-μm ridge laser in group B at 100 K and the ηd is a little bit higher for temperatures from 100 to 180 K. It is because lasers with wide ridges have large emission area and fast heat dissipation, which can compensate the temperature rise caused by high injection current at low operation temperatures
Summary
Semiconductor lasers are desirable for applications of molecular spectroscopy, gas sensing (Tittel et al, 2003; Zhang et al 2021a; Zhang et al 2021b) and medical diagnostics (Jean and Bende 2003), etc. InxGa1-xAs/In0.53Ga0.47As (x > 0.53) quantum well (QW) structure on InP substrate is an alternative method for this wavelength range, which has the advantages of relatively mature growth and processing technology (Serries et al, 2001; Sato et al, 2005) In this structure, the well width and numbers of QWs can be adjusted to extend the emission wavelength and improve the laser performance. In ref (Cao et al, 2014), the threshold current density, output power and characteristic temperature were improved remarkably by adopting triangular QWs in the active region of InAs/InGaAs QW lasers. The TEM image of similar material structures can be found in literatures with distinct interfaces (Sato et al, 2007) It is believed both groups of samples have good material quality for further fabrication into lasers. A Coherent EMP 1000 power meter was used for the I-P measurements and the spectral characteristics were measured by a Nicolet 860 Fourier transform infrared (FTIR) spectrometer
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