Abstract

ABSTRACT In this work, we demonstrate fusion of GaAs-based laser structures to GaN-based light-emitting diode (LED) heterosiructures. Successful operation of red and infrared lasers fused to functioning GaN LEDs is achieved. A singleheterostructure consisting of AlGalnAs/A1GaAs quantum well (QW) and GaInP/A1GaInP QW laser diode structures wasgrown by low-pressure organometallic vapor phase epitaxy (OMVPE) on GaAs substrates. The GaN LED structure wasgrown by OMVPE on an A-face sapphire substrate. The heterostructures were fused at 650 °C in a H2 ambient, while underuniaxial pressure. To fabricate the lasers, the GaAs substrate was selectively etched, leaving the red and infrared QW laserstack structure on GaN. Ridge waveguide QW lasers and GaN LEDs were fabricated with the fused epilayers. Infrared,AlGaInAs QW lasers (4 x 500 tim), operated with a threshold current (Ith) of 40 mA and external differential quantumefficiency ('id) of 1 1.5 %/facet at about 821 nm. Red, GaInP QW lasers (4 x

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