Abstract
A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.
Highlights
A photonic integrated circuit (PIC) on silicon is one of the most promising platforms for highdensity photonic integration (Dai et al, 2012; Komljenovic et al, 2018; Huang et al, 2020)
The overall optical spectral evolution analysis among all three types of lasers shows that the sole excited state (ES) quantum dot (QD) laser exhibits superior performance over the QW laser with an improved critical feedback level of 28.2 dB in the identical FP structure
We have investigated the feedback sensitivity of an ES InAs/GaAs QD laser on silicon in comparison with commercial QW lasers
Summary
A photonic integrated circuit (PIC) on silicon is one of the most promising platforms for highdensity photonic integration (Dai et al, 2012; Komljenovic et al, 2018; Huang et al, 2020). It was proved that ground state (GS) InAs/GaAs quantum dot (QD) lasers can stably operate up to an optical feedback of −7.4 dB (Duan et al, 2019). It is normally difficult to maintain sole GS in QD lasers at high injection current for higher output power as the stability of QD lasers is greatly affected by the mode competition between GS and excited state (ES) even when the GS still dominates. The ES QD laser remains highly stable during operation at a high injection current while exhibiting a Feedback Insensitive Quantum Dot Laser stronger feedback insensitivity than dual-state operation (Katsuaki et al, 2012). This paper investigates the feedback sensitivity of an InAs/GaAs QD laser epitaxially grown on Si (001) operating in a sole excited state. The sole excitedstate lasers are highly stable during room-temperature operation but with a relatively short lifetime at the current stage
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