Quantum Light Sources Research Articles

Universal design method for bright quantum light sources based on circular Bragg grating cavities.

We theoretically develop an efficient and universal design scheme of quantum light sources based on hybrid circular Bragg grating (CBG) cavity with and without electrical contact bridges. As the proposed design scheme strongly alleviates the computational cost of numerical simulation, we present high-performance CBG designs based on the GaAs/SiO2/Au material system for emission wavelengths ranging from 900 nm to 1600 nm, covering the whole telecom O-band and C-band. All designs achieve remarkable Purcell factors surpassing a value of 26 and extraction efficiencies (into a numerical aperture of 0.8) exceeding 92% without contact bridges and 86% with contact bridges. Additionally, we show that our design approach easily deals with realistic structural constraints, such as preset thicknesses of a semiconductor membrane or SiO2 layers or with a different material system. The high design flexibility greatly supports the experimental deterministic fabrication approaches, allowing one to perform in-situ design adaptation and to integrate single quantum emitters of an inhomogeneously broadened ensemble on the same chip into wavelength-adapted structures without spectral constraints, which highly increase the yield of quantum device fabrication.

Multichannel Quantum Emission with On-Chip Emitter-Coupled Holographic Metasurfaces.

Multichannel quantum emission is in high demand for advanced quantum photonic applications such as quantum communications, quantum computing, and quantum cryptography. However, to date, the most common way for shaping photon emission from quantum emitters (QEs) is to utilize free-standing (external) bulky optical components. Here, we develop the multichannel holography approach for flexibly designing on-chip QE-coupled metasurfaces that make use of nonradiatively QE-excited surface plasmon polaritons for generating far-field quantum emission, which propagates in designed directions carrying specific spin and orbital angular momenta (SAM and OAM, respectively). We further design, fabricate, and characterize on-chip quantum light sources of multichannel quantum emission encoded with different SAMs and OAMs. The holography-based inverse design approach developed and demonstrated on-chip quantum light sources with multiple degrees of freedoms, thereby enabling a powerful platform for quantum nanophotonics, especially relevant for advanced quantum photonic applications, e.g., high-dimensional quantum information processing.

Fabrication of polarity inverted LiNbO3/GaN channel waveguide by surface activated bonding for high-efficiency transverse quasi-phase-matched wavelength conversion

GaN is an attractive material for integrating optical quantum devices. Adding a large optical nonlinearity of MgO doped congruent LiNbO3 (MgO:CLN) to GaN will improve the efficiency of quantum light sources. In this work, we proposed transverse quasi-phase-matched wavelength conversion devices with waveguide core materials of MgO:CLN and GaN. The waveguide core is formed by an adhesion-free surface activated bonding (SAB). A high thin film transfer yield was achieved with a high bonding strength of 4 MPa by optimizing the bonding conditions and reducing the surface roughness of the GaN film to be 0.5 nm in a 100 × 100 μm2 area using chemical mechanical polishing. The MgO:CLN/GaN waveguide structure was successfully fabricated by MgO:CLN thin film transfer, lift-off and dry etching processes. This MgO:CLN/GaN adhesion-free SAB technique is expected to be applied to various devices, such as optical devices and electronic devices, to enhance their functionality.

Dual-band higher-order topological states and four-wave mixing in plasmonic valley-Hall metasurfaces

Higher-order topological states in plasmonic metasurfaces are of great importance in practice for their tight confinements and high field enhancements, providing many promising nonlinear applications such as robust quantum light source through four-wave mixing (FWM). However, previous works are limited to single-band modes and FWM processes based on second-order topological corner states have still not been revealed. In this work, we propose a plasmonic valley-Hall topological metasurface, which is modelled based on coupled dipole approximation with dyadic Green's functions containing retarded long-range interaction terms. Simultaneous lifting of Dirac degeneracies in two bandgaps due to inversion-symmetry breaking results in dual-band second-order topological states, which are robust against structural disorder. We present a theoretical approach for considering the nonlinear interaction in dipole arrays and numerically show nonlinear generation of corner mode at signal frequency via the FWM process by pumping with edge modes. The results presented in this work will pave a broad way towards the wide applications of topological plasmonic metasurfaces.

Research progress in quantum key distribution

Quantum key distribution (QKD) is a sophisticated method for securing information by leveraging the principles of quantum mechanics. Its objective is to establish a confidential key between authorized partners who are connected via both a quantum channel and a classical authentication channel. This paper presents a comprehensive overview of QKD protocols, chip-based QKD systems, quantum light sources, quantum detectors, fiber-based QKD networks, space-based QKD systems, as well as the applications and prospects of QKD technology.

Enhanced brightness of quantum emitters via in situ coupling to the dielectric microsphere

Achieving higher brightness of a single-photon emitter (SPE) is central for advanced applications from quantum information processing to quantum sensing. However, most approaches of integrating quantum emitters and photonic resonators require accurately localizing the emitter into a photonic structure, which is a challenge. Here, we report using dielectric microspheres for laser focusing to create SPEs in hexagonal boron nitride and in situ enhance the emission via photonic coupling between the SPE and the dielectric microspheres. The photoluminescence intensity is increased by 2.4-fold, achieving a high brightness SPE with a saturation intensity of up to 19.6 Mcounts s−1. This approach provides a feasible way to generate a high-performance SPE while simultaneously enabling precise coupling of the quantum light source and optical resonators.

Composed Effects of Electron-Hole Exchange and Near-Field Interaction in Quantum-Dot-Confined Radiative Dipoles

Conservation of polarization is an important requirement for reliable single-photon emitters, which, in turn, are essential building blocks for light-based quantum information processing. In this work, we study the exciton-spin dynamics in a double quantum dot under the combined effects of electron-hole exchange and Förster resonance energy transfer. By means of numerical solutions of the quantum master equation, we simulate the time-dependent spin polarization for two neighboring dots. According to our results, under some conditions, the depolarization caused by the electron-hole exchange may be slowed by the near field-induced interdot energy transfer, suggesting a new mechanism to extend the exciton coherence time. This opens doors to alternative schemes for improved solid-state quantum light sources.

Photoluminescence imaging of single photon emitters within nanoscale strain profiles in monolayer WSe2

Local deformation of atomically thin van der Waals materials provides a powerful approach to create site-controlled chip-compatible single-photon emitters (SPEs). However, the microscopic mechanisms underlying the formation of such strain-induced SPEs are still not fully clear, which hinders further efforts in their deterministic integration with nanophotonic structures for developing practical on-chip sources of quantum light. Here we investigate SPEs with single-photon purity up to 98% created in monolayer WSe2 via nanoindentation. Using photoluminescence imaging in combination with atomic force microscopy, we locate single-photon emitting sites on a deep sub-wavelength spatial scale and reconstruct the details of the surrounding local strain potential. The obtained results suggest that the origin of the observed single-photon emission is likely related to strain-induced spectral shift of dark excitonic states and their hybridization with localized states of individual defects.

Multi‐Wavelength Quantum Light Sources on Silicon Nitride Micro‐Ring Chip

AbstractMulti‐wavelength quantum light sources are extremely desired in establishing communication links among multiple users for realizing quantum networks. Despite recent impressive advances, developing such a quantum light source with high quality remains challenging. Here a multi‐wavelength quantum light source using a silicon nitride micro‐ring with a free spectral range of 200 GHz is demonstrated. The generation of eight‐wavelength‐paired photon pairs is ensured in a wavelength range of 25.6 nm. With device optimization and noise‐rejecting filters, this source enables the generation of heralded single‐photons at a rate of 62 kHz with and the generation of energy‐time entangled photons with a visibility of in the Franson interferometer. These results, at room temperature and telecom wavelength, in a CMOS‐compatible platform, represent an important step toward integrated quantum photonic devices, which pave the way for realizing a large‐scale quantum network.

Experimental realization of a quantum classification: Bell state measurement via machine learning

The Bell state is a crucial resource for the realization of quantum information tasks, and when combined with orbital angular momentum (OAM), it enables a high-dimensional Hilbert space, which is essential for high-capacity quantum communication. In this study, we demonstrate the recognition of OAM Bell states using interference patterns generated by a classical light source and a single-photon source from a Sagnac interferometer-based OAM Bell state evolution device. The interference patterns exhibit a one-to-one correspondence with the input Bell states, providing conclusive evidence for the full recognition of OAM Bell states. Furthermore, we introduce machine learning to the field of Bell state recognition by proposing a neural network model capable of accurately recognizing higher order single-photon OAM Bell states, even in the undersampling case. In particular, the model’s training set includes interference patterns of OAM Bell states generated by classical light sources, yet it is able to recognize single-photon OAM Bell states with high accuracy, without relying on quantum resources during training. Our innovative application of neural networks to the recognition of single-photon OAM Bell states not only circumvents the resource consumption and experimental difficulties associated with quantum light sources but also facilitates the study of OAM-based quantum information.

Quantum dots for photonic quantum information technology

The generation, manipulation, storage, and detection of single photons play a central role in emerging photonic quantum information technology. Individual photons serve as flying qubits and transmit the relevant quantum information at high speed and with low losses, for example between individual nodes of quantum networks. Due to the laws of quantum mechanics, the associated quantum communication is fundamentally tap-proof, which explains the enormous interest in this modern information technology. On the other hand, stationary qubits or photonic states in quantum computers can potentially lead to enormous increases in performance through parallel data processing, to outperform classical computers in specific tasks when quantum advantage is achieved. In this review, we discuss in depth the great potential of semiconductor quantum dots in photonic quantum information technology. In this context, quantum dots form a key resource for the implementation of quantum communication networks and photonic quantum computers, because they can generate single photons on demand. Moreover, these solid-state quantum emitters are compatible with the mature semiconductor technology, so that they can be integrated comparatively easily into nanophotonic structures such as resonators and waveguide systems, which form the basis for quantum light sources and integrated photonic quantum circuits. After a thematic introduction, we present modern numerical methods and theoretical approaches to device design and the physical description of quantum dot devices. We then introduce modern methods and technical solutions for the epitaxial growth and for the deterministic nanoprocessing of quantum devices based on semiconductor quantum dots. Furthermore, we highlight the most promising device concepts for quantum light sources and photonic quantum circuits that include single quantum dots as active elements and discuss applications of these novel devices in photonic quantum information technology. We close with an overview of open issues and an outlook on future developments.

Frequency-tunable microwave quantum light source based on superconducting quantum circuits

A non-classical light source is essential for implementing a wide range of quantum information processing protocols, including quantum computing, networking, communication and metrology. In the microwave regime, propagating photonic qubits, which transfer quantum information between multiple superconducting quantum chips, serve as building blocks for large-scale quantum computers. In this context, spectral control of propagating single photons is crucial for interfacing different quantum nodes with varied frequencies and bandwidths. Here a deterministic microwave quantum light source was demonstrated based on superconducting quantum circuits that can generate propagating single photons, time-bin encoded photonic qubits and qudits. In particular, the frequency of the emitted photons can be tuned in situ as large as 200 MHz. Even though the internal quantum efficiency of the light source is sensitive to the working frequency, it is shown that the fidelity of the propagating photonic qubit can be well preserved with the time-bin encoding scheme. This work thus demonstrates a versatile approach to realizing a practical quantum light source for future distributed quantum computing.

Arbitrarily structured quantum emission with a multifunctional metalens

Structuring light emission from single-photon emitters (SPEs) in multiple degrees of freedom is of great importance for quantum information processing towards higher dimensions. However, traditional control of emission from quantum light sources relies on the use of multiple bulky optical elements or nanostructured resonators with limited functionalities, constraining the potential of multi-dimensional tailoring. Here we introduce the use of an ultrathin polarisation-beam-splitting metalens for the arbitrary structuring of quantum emission at room temperature. Owing to the complete and independent polarisation and phase control at the single meta-atom level, the designed metalens enables simultaneous mapping of quantum emission from ultra-bright defects in hexagonal boron nitride and imprinting of an arbitrary wavefront onto orthogonal polarisation states of the sources. The hybrid quantum metalens enables simultaneous manipulation of multiple degrees of freedom of a quantum light source, including directionality, polarisation, and orbital angular momentum. This could unleash the full potential of solid-state SPEs for their use as high-dimensional quantum sources for advanced quantum photonic applications.

Time-Resolved Line Shapes of Single Quantum Emitters via Machine Learned Photon Correlations.

Solid-state single-photon emitters (SPEs) are quantum light sources that combine atomlike optical properties with solid-state integration and fabrication capabilities. SPEs are hindered by spectral diffusion, where the emitter's surrounding environment induces random energy fluctuations. Timescales of spectral diffusion span nanoseconds to minutes and require probing single emitters to remove ensemble averaging. Photon correlation Fourier spectroscopy (PCFS) can be used to measure time-resolved single emitter line shapes, but is hindered by poor signal-to-noise ratio in the measured correlation functions at early times due to low photon counts. Here, we develop a framework to simulate PCFS correlation functions directly from diffusing spectra that match well with experimental data for single colloidal quantum dots. We use these simulated datasets to train a deep ensemble autoencoder machine learning model that outputs accurate, noiseless, and probabilistic reconstructions of the noisy correlations. Using this model, we obtain reconstructed time-resolved single dot emission line shapes at timescales as low as 10ns, which are otherwise completely obscured by noise. This enables PCFS to extract optical coherence times on the same timescales as Hong-Ou-Mandel two-photon interference, but with the advantage of providing spectral information in addition to estimates of photon indistinguishability. Our machine learning approach is broadly applicable to different photon correlation spectroscopy techniques and SPE systems, offering an enhanced tool for probing single emitter line shapes on previously inaccessible timescales.

On‐Chip Single‐Molecule Fluorescence Enhancement via Slotted Gallium Phosphide Nanodisks at Anapole States

AbstractSurface‐enhanced fluorescence of single emitters lies at the heart of single‐molecule DNA sequencers as well as quantum light sources. The state‐of‐the‐art metallic nanoapertures are impaled in a dilemma between enhancing radiative decays and minimizing nonradiative issues such as quenching and resistive heating. Here, lossless gallium phosphide slotted nanodisks are proposed that operate at anapole states by in‐plane excitation, precisely aligning the optical “hot spots” with fluidic focuses of zeptomolar sensing volume. Unlike traditional microscopic configurations, this proposed scheme excited via butt‐coupled in‐plane waveguides not only exhibits averagely 12.4× excitation enhancement growth for a single emitter located in the slot, but also enables precise manipulation of the local density of optical states which gives rise to 13.2× when QY0 = 0.003. Surprisingly, directional collection from the excitation waveguide appears in the optimal approach rather than the collection from a CMOS camera at the bottom. The overall on‐chip fluorescent enhancement is benchmarked with the four dyes’ colors, lowering the excitation power to 5.3% of contemporary zero‐mode waveguide (ZMW) devices.

A Unipolar Quantum Dot Diode Structure for Advanced Quantum Light Sources.

Triggered, indistinguishable single photons are crucial in various quantum photonic implementations. Here, we realize a novel n+-i-n++ diode structure embedding semiconductor quantum dots: the gated device enables spectral tuning of the transitions and deterministic control of the charged states. Blinking-free single-photon emission and high two-photon indistinguishability are observed. The line width's temporal evolution is investigated across over 6 orders of magnitude time scales, combining photon-correlation Fourier spectroscopy, high-resolution photoluminescence spectroscopy, and two-photon interference (visibility of VTPI,2ns = (85.8 ± 2.2)% and VTPI,9ns = (78.3 ± 3.0)%). Most of the dots show no spectral broadening beyond ∼9 ns time scales, and the photons' line width ((420 ± 30) MHz) deviates from the Fourier-transform limit by a factor of 1.68. The combined techniques verify that most dephasing mechanisms occur at time scales ≤2 ns, despite their modest impact. The presence of n-doping implies higher carrier mobility, enhancing the device's appeal for high-speed tunable, high-performance quantum light sources.

Photonic-reconfigurable entanglement distribution network based on silicon quantum photonics

The entanglement distribution network connects remote users by sharing entanglement resources, which is essential for realizing quantum internet. We propose a photonic-reconfigurable entanglement distribution network (PR-EDN) based on a silicon quantum photonic chip. The entanglement resources are generated by a quantum light source array based on spontaneous four-wave mixing in silicon waveguides and distributed to different users through time-reversed Hong–Ou–Mandel interference by on-chip Mach–Zehnder interferometers with thermo-optic phase shifters (TOPSs). A chip sample is designed and fabricated, supporting a PR-EDN with 3 subnets and 24 users. The network topology of the PR-EDN could be reconfigured in three network states by controlling the quantum interference through the TOPSs, which is demonstrated experimentally. Furthermore, a reconfigurable entanglement-based quantum key distribution network is realized as an application of the PR-EDN. The reconfigurable network topology makes the PR-EDN suitable for future quantum networks requiring complicated network control and management. Moreover, it is also shown that silicon quantum photonic chips have great potential for large-scale PR-EDN, thanks to their capacities for generating and manipulating plenty of entanglement resources.

Engineering Quantum Nanophotonic Components from Hexagonal Boron Nitride

AbstractIntegrated quantum photonics (IQP) provides a path to practical, scalable quantum computation, communications and information processing. Realization of an IQP platform requires controlled engineering of many nanophotonic components. However, the range of materials for monolithic platforms is limited by the simultaneous need for high‐quality quantum light sources, high optical performance, and availability of scalable nanofabrication techniques. Here, the fabrication of IQP components from the recently emerged material hexagonal boron nitride (hBN), including tapered waveguides, microdisks, and 1D and 2D photonic crystal cavities, is demonstrated. Resonators with quality factors greater than 4000 are achieved, and proof‐of‐principle complex, free‐standing IQP circuitry fabricated from single‐crystal hBN is engineered. The results show the potential of hBN for scalable integrated quantum technologies.

Velocity field distribution control in antisolvent flow realizing highly stable and efficient perovskite nanocrystals

Achieving highly stable and efficient perovskite nanocrystals (NCs) without applying functional additives or encapsulation, particularly sustaining the stability in ultra-dilute solution, is still a formidable challenge. Here, we show the FAPbI3 perovskite NCs with achieved ∼100 % photoluminescence quantum yield (PLQY) and low defect density (∼0.2 cm−3 per NCs), which is obtained by controlling the velocity field distribution of antisolvent flow in ligand-assisted reprecipitation process. The NCs show incredible reproducibility with narrow deviation of PLQY and linewidth between batch by batch, as well as remarkable stability of maintaining over 80 % PLQY, either in an ultra-diluted solution (9.3 × 10-6 mg/mL), or storing in ambient condition after 90 days with concentration of 0.09 mg/mL. The results in this work demonstrate the interplay of fluid mechanics and crystallization kinetics of perovskite, which pioneers a novel and unprecedent understanding for improving the stability of perovskite NCs for efficient quantum light source.

Design Rules for Obtaining Narrow Luminescence from Semiconductors Made in Solution.

Solution-processed semiconductors are in demand for present and next-generation optoelectronic technologies ranging from displays to quantum light sources because of their scalability and ease of integration into devices with diverse form factors. One of the central requirements for semiconductors used in these applications is a narrow photoluminescence (PL) line width. Narrow emission line widths are needed to ensure both color and single-photon purity, raising the question of what design rules are needed to obtain narrow emission from semiconductors made in solution. In this review, we first examine the requirements for colloidal emitters for a variety of applications including light-emitting diodes, photodetectors, lasers, and quantum information science. Next, we will delve into the sources of spectral broadening, including "homogeneous" broadening from dynamical broadening mechanisms in single-particle spectra, heterogeneous broadening from static structural differences in ensemble spectra, and spectral diffusion. Then, we compare the current state of the art in terms of emission line width for a variety of colloidal materials including II-VI quantum dots (QDs) and nanoplatelets, III-V QDs, alloyed QDs, metal-halide perovskites including nanocrystals and 2D structures, doped nanocrystals, and, finally, as a point of comparison, organic molecules. We end with some conclusions and connections, including an outline of promising paths forward.