Quantum Efficiency Measurements Research Articles

Quantum jump photodetector for narrowband photon counting with a single atom

Using a single neutral Rb87 atom held in an optical trap, and “quantum jump” detection of single-photon-initiated state changes, we demonstrate a single-photon quantum jump photodetector (QJPD) with intrinsically narrow bandwidth and strong rejection of out-of-band photons, of interest for detecting weak optical signals in the presence of a strong broadband background. By analyzing fluorescence photon count distributions for the bright and dark states with and without excitation, we measure quantum efficiency of 2.9(2)×10−3, a record for single-pass quantum jump production, and signal-photon-unprovoked “dark jump” rate—analogous to the dark count rate of other detectors —of 3(10)×10−3jumps/s during passive accumulation plus 4.0(4)×10−3 jumps per readout, orders of magnitude below those of traditional single-photon detectors. Available methods can substantially improve QJPD quantum efficiency, dark jump rate, bandwidth, and tunability. Published by the American Physical Society 2024

A Facile Low Prevacuum Treatment to Enhance the Durability of Nonfullerene Organic Solar Cells

Herein, a straightforward vacuum‐assisted method is introduced to enhance the stability of nonfullerene organic solar cells (OSCs). The method, termed “prevacuum” involves subjecting the active layer (D18:Y6) to a low‐pressure vacuum (−1 bar) before thermal annealing at 100 °C. Compared to untreated devices, prevacuum‐treated OSCs exhibit a notable increase in power conversion efficiency from 13.71% to 14.90%. This enhancement is attributed to improved light absorption and charge extraction, as evidenced by external quantum efficiency measurements. Moreover, prevacuum treatment significantly improves device stability under operational conditions, with a 30% power loss occurring after 8.25 h compared to 4.5 h for untreated devices. This improvement is attributed to the removal of volatile components and impurities during the vacuum process, leading to a more hydrophobic and stable active layer. The study demonstrates the efficacy of prevacuum treatment as a simple and accessible method for enhancing the performance and longevity of OSCs, paving the way for their broader application in sustainable energy technologies.

Characterization of MoS2:Nb sputtered thin films. An application as hole transport layer in Cu2ZnSnS4/Si tandem solar cells

MoS2:Nb films deposited by radio-frequency magnetron sputtering are investigated in view of their application in infrared (IR)-transparent contacts for tandem photovoltaic devices.This material is already known to give a good electrical contact with p-type chalcogenide semiconductors, which are typically grown onto opaque molybdenum metallic contacts and a MoS2 layer spontaneously forms at the back interface during the on-top semiconductor growth. Our study explores a different approach, which involves the direct growth of IR-transparent MoS2:Nb films via sputtering inside complete photovoltaic devices, like Cu2ZnSnS4 (CZTS)-based single junction solar cells and CZTS/Si tandem devices. Films deposited at different sputtering pressures are compared by analysing their microstructure, morphology, chemical composition, optical and electrical properties. The effects of post-deposition sulfurization treatments are also investigated. We find that MoS2:Nb films deposited at around 0.1 Pa exhibit compactness but show a notable sulfur deficit ([S]/[Mo]≈1.4), a significant sub-bandgap optical absorptance and lack of crystallinity. Increasing the Ar pressure to 1 Pa raises the [S]/[Mo] ratio to 2.2, yielding crystalline films with good IR-transparency, although with a porous morphology. Despite 0.5 wt% Nb-doping of the sputtering target, the as-deposited films demonstrate n-type conductivity likely due to uncontrolled impurities and intrinsic defects. Ultraviolet Photoemission Spectroscopy measurements suggest that films’ work function higher than 5 eV can be obtained with a post-deposition sulfurization, making these materials suitable as Hole Transport Layer in photovoltaic applications. A similar increase in work function is expected in the CZTS/MoS2 junctions, since the sputtered MoS2:Nb films undergo a sulfurization process needed to obtain the overlying polycrystalline CZTS absorber.CZTS solar cells produced with sputtered MoS2 and Transparent Conductive Oxides contacts on glass substrates, despite plagued by severe adhesion problems, show the potentiality to give efficiencies comparable to reference devices with standard Mo back contact. Fabrication of CZTS/Si tandem devices on textured silicon bottom cells yields a maximum efficiency of 4.4 %, primarily hindered by the low quality of the CZTS film on textured substrates. Nonetheless, optoelectronic characterizations based on both spectrophotometric and quantum efficiency measurements confirm a good IR transparency of the MoS2-based intermediate contacts and the desired electrical behaviour.

Zn2-xGeO4-GeO2:(x)Mn2+ films with long persistence, intense brightness and high quantum efficiency, deposited by ultrasonic spray pyrolysis

This work shows the synthesis and characterization of the Zn2-xGeO4-GeO2:(x)Mn2+ (x = 0.10, 0.25, and 0.50 at.%) films using the Ultrasonic Spray Pyrolysis (USP) technique. These films were deposited at 500 °C and heat treated at 800 °C for 13 h. X-ray diffraction (XRD) measurements showed the rhombohedral and hexagonal phases of Zn2-xGeO4 (78.8 %) and GeO2 (21.2 %), respectively. SEM micrographs exhibited the surface morphology of these films. The STEM and HAADF show Ge, Zn, and O atomic layers. In addition, XPS was carried out to observe the oxidation states of Mn2+ (75.4 %) and Mn3+ (24.6 %) for the films doped with Mn ions (0.10 at.%). Incorporating manganese ions into the Zn2-xGeO4-GeO2 host lattice generated an extremely green emission, exciting at 250 nm. The photoluminescence and persistence luminescence properties were studied in accordance with the manganese doping concentration. For photoluminescence, it was found that the optimal doping percentage was 0.25 at.%, and for persistence luminescence, it was 0.10 at.% Mn with λex = 250 nm. Quantum efficiency measurements gave a result of 100 %. In addition, preliminary CL measurements were exhibited.

Comprehensive study of photoluminescence and device properties in Cu2Zn(Sn1−xGex)S4 monograins and monograin layer solar cells

Ge-alloying of Cu2ZnSnS4 is a promising strategy for producing wide-bandgap absorber materials suitable for use in tandem structures or indoor solar cell applications. Incorporating Ge can suppress Sn-related defects while maintaining the kesterite structure and p-type conductivity throughout the entire range of composition. In this study, Cu2Zn(Sn1−xGex)S4 monograins were synthesized in molten salt by the synthesis-growth method, where value x was varied from 0 to 1, with a step of 0.2. The inclusion of Ge into the crystals was confirmed by energy-dispersive X-ray spectroscopy, Raman spectroscopy, and X-ray diffraction analysis. The bandgaps of Cu2Zn(Sn1−xGex)S4 solid solutions were determined as Eg = 1.50–2.25 eV by external quantum efficiency measurement. A detailed study of temperature and laser power-dependent photoluminescence (PL) for powder crystals with x = 0, x = 0.2 and x = 0.4 revealed that the dominant recombination mechanisms originate from defect clusters involving a shallow acceptor and deep donor defect. Ge-alloying helped to suppress the harmful SnZn donor defects, but at the same time shifted the defects' energy levels deeper into the bandgap. The obtained activation energies indicate that the acceptor defect becomes shallower with the inclusion of Ge. At the mid-temperature range (T = 60–200 K), the presence of two different recombinations was revealed in the system, originating from very closely located PL emission bands.

(Invited) In Situ spectroscopy of Electrocatalytic and Photocatalytic Interfaces

We explore various aspects of electrochemistry and photoelectrochemistry using in situ spectroscopy of electrode (metal) and photoelectrode (semiconductor) interfaces in situ under electrochemical working conditions. These spectroscopies include sum frequency generation (SFG), transient reflectance/absorption spectroscopy (TAS/TRS), and surface enhanced Raman spectroscopy (SERS). Using surface enhanced Raman scattering (SERS) spectroscopy, we monitor local electric fields using Stark-shifts of nitrile-functionalized silicon photoelectrodes.6 We also report several spectroscopic methods for monitoring local electric fields (within the double layer), local pH,1 photo-induced surface potential and charge transfer2 at electrode surfaces using surface reporter molecules. The Figure below illustrates two surface reporter molecules for determining the local pH, local surface potential, and charge transfer at electrode and photoelectrode surfaces. We also measured the stacking dependence and Resonant interlayer excitation of monolayer WSe2/MoSe2 heterostructures for photocatalytic energy conversion.3 Using sum frequency generation (SFG) spectroscopy, we measure the voltage dependence of the orientation of D2O molecules at a graphene electrode surface, which is related back to the “stiffness of the ensemble”.4 Using transient absorption spectroscopy (TAS), we measure the lifetime of hot electrons photoexcited in plasmon resonant nanostructures.5 Using transient reflectance spectroscopy (TRS), we measure the photoexcited carrier dynamics in a GaP/TiO2 photoelectrode, as well as the electrostatic field dynamics at this semiconductor-liquid interfaces in situ under various electrochemical potentials.6 Here, the electrostatic fields at the surface of the semiconductor are measured via Franz−Keldysh oscillations (FKO). These spectra reveal that the nanoscale TiO2 protection layer enhances the built-in field and charge separation performance of GaP photoelectrodes.7 1 Wang, Y.Y., et al., Measuring Local pKa and pH Using Surface Enhanced Raman Spectroscopy of 4‐Mercaptobenzoic Acid. Langmuir, DOI:10.1021/acs.langmuir.3c02073 (2023).2 Li, R., et al., SERS Detection of Charge Transfer at Electrochemical Interfaces Using Surface-Bound Ferrocene. The Journal of Physical Chemistry C, 127, 14263 (2023).3 Chen, J., et al., Stacking Independence and Resonant Interlayer Excitation of Monolayer WSe2/MoSe2 Heterostructures for Photocatalytic Energy Conversion. ACS Applied Nano Materials, DOI:10.1021/acsanm.9b01898 (2020).4 Montenegro, A., et al., Field-Dependent Orientation and Free Energy of D2O at an Electrode Surface Observed via SFG Spectroscopy. Journal of Physical Chemistry C, 126, 20831 (2022).5 Wang, Y., et al., In Situ Investigation of Ultrafast Dynamics of Hot Electron-Driven Photocatalysis in Plasmon-Resonant Grating Structures. Journal of the American Chemical Society, 144, 3517 (2022).6 Xu, Z.H., et al., Direct In Situ Measurement of Quantum Efficiencies of Charge Separation and Proton Reduction at TiO2-Protected GaP Photocathodes. Journal of the American Chemical Society, 2860-2869 (2023).7 Wang, Y. and S.B. Cronin, Performance Enhancement of TiO2-encapsulated Photoelectrodes Based on III–V Compound Semiconductors, in Ultrathin Oxide Layers for Solar and Electrocatalytic Systems. 2022, Royal Society of Chemistry. p. 103-134. Figure 1

A novel diamond-like carbon based photocathode for PICOSEC Micromegas detectors

The PICOSEC Micromegas (MM) detector is a precise timing gaseous detector based on a MM detector operating in a two-stage amplification mode and a Cherenkov radiator. Prototypes equipped with cesium iodide (CsI) photocathodes have shown promising time resolutions as precise as 24 picoseconds (ps) for Minimum Ionizing Particles. However, due to the high hygroscopicity and susceptibility to ion bombardment of the CsI photocathodes, alternative photocathode materials are needed to improve the robustness of PICOSEC MM. Diamond-like Carbon (DLC) film have been introduced as a novel robust photocathode material, which have shown promising results. A batch of DLC photocathodes with different thicknesses were produced and evaluated using ultraviolet light. The quantum efficiency measurements indicate that the optimized thickness of the DLC photocathode is approximately 3 nm. Furthermore, DLC photocathodes show good resistance to ion bombardment in aging test compared to the CsI photocathode. Finally, a PICOSEC MM prototype equipped with DLC photocathodes was tested in muon beams. A time resolution of around 42 ps with a detection efficiency of 97% for 150 GeV/c muons were obtained. These results indicate the great potential of DLC as a photocathode for the PICOSEC MM detector.

Measuring the device‐level EQE of multi‐junction photonic power converters

AbstractMulti‐junction photonic power converters (PPCs) are photovoltaic cells used in photonic power transmission systems that convert monochromatic light to electricity at enhanced output voltages. The junctions of a multi‐junction PPC have overlapping spectral responsivity, which poses a unique challenge for spectrally resolved external quantum efficiency (EQE) measurements. In this work, we present a novel EQE measurement technique based on a wavelength‐tunable laser system and characterize the differential multi‐junction device‐level EQE (dEQEMJ) as a function of the monochromatic irradiance over seven orders of magnitude. The irradiance‐dependent measurements reveal three distinct irradiance regimes with different dEQEMJ. For the experimentally studied 2‐junction GaAs‐based device, at medium irradiance with photocurrent densities between 0.3 and 90 mA/cm2, dEQEMJ is independent of irradiance and follows the expected EQE of the current‐limiting subcell across all wavelengths. At higher irradiance, nonlinear device response is observed and attributed to luminescent coupling between the subcells. At lower irradiances, namely, in the range of conventional EQE measurement systems, nonlinear effects appear, which mimic luminescent coupling behavior but are instead attributed to finite shunt resistance artifacts that artificially inflate dEQEMJ. The results demonstrate the importance of measuring the device‐level dEQEMJ in the relevant irradiance regime. We propose that device‐level measurements in the finite shunt artifact regime at low monochromatic irradiance should be avoided.

Soft X-ray performance of an optimised charge-coupled device for astronomy

For the upcoming European Space agency (ESA)/Chinese Academy of Sciences (CAS) SMILE mission, launching in 2025, large-format soft X-ray optimised CCDs have been manufactured by Teledyne e2v, named the CCD370. The CCDs are approximately 8 cm × 8 cm and are comprised of 4510 × 4510 18 μm pitch pixels, with a store shield covering approximately 1/7th of the active imaging area to facilitate frame-transfer operation mode. To optimise quantum efficiency within the soft X-ray energy band, the device is 16 μm thick, back illuminated, and has an additional back surface passivation process. The focal plane of the soft X-ray imager (SXI) on the SMILE spacecraft will be comprised of 2 CCD370s, operating with 6 × 6 on-chip binning to mitigate against CTI-induced charge transfer losses and charge spreading throughout the 3-year mission lifetime.As part of the pre-flight testing and calibration, a CCD370 was characterised at the PTB beamline at the BESSY 2 synchrotron in Berlin, and key metrics such as quantum efficiency and energy resolution in the 0.2–1.8 keV energy band were assessed. The quantum efficiency measurements show expected performance within specification for the instrument, and also match a transmission-layer QE model. The energy resolution is 68 ± 2 eV FWHM @ 1.2 keV, which is an improvement over the current generation of X-ray telescopes such as XMM-Newton, Chandra, and the Swift X-ray Telescope. Although competing technologies such as DEPFETs and scientific CMOS image sensors now have similar performance to CCDs, the performance shown here can still easily satisfy requirements for novel X-ray instruments, and can still be useful in future astronomy missions given the rich heritage, high technology-readiness-level, and maturity of the technology.

60‐5: Late‐News Paper: External Quantum Efficiency of All InGaN Polychromic MicroLEDs

This paper reports on the performance results including radiance, dominant wavelength, and forward voltage of monolithic MicroLEDs that can emit red, green, and blue light simultaneously and are thus described as polychromic. Further, flip chip devices have been fabricated to facilitate absolute EQE external quantum efficiency (EQE) measurements. The peak EQE for a 20 × 17 µm device are 2.0 % in red, 14.2% in green, and 17.5% in blue.

P‐253: Late‐News Poster: The Evaluation on the Stability of Electroluminescent Materials Using Polaron Pair Formation Kinetics

We developed the method for evaluation of the stability of electroluminescent materials by using QEMS (quantum efficiency measurement system). Relative PL (photoluminescence) intensity decay of BDs (blue dopants) with BHs (blue hosts) in solution under UV light irradiation were measured and the rate constants for polaron pair formation by electron transfer were determined through first‐order kinetics analyses. The rate constants of polaron pair formation (6.487E‐04 –1.805E‐03 min‐1 ) were inversely proportional to the lifetime of OLED (organic light‐emitting diode) devices. We expect that this evaluation method can be applied to the development of new OLED materials and longer lifetime OLED devices.

Phonon-mediated quantum efficiency measurement in semiconductors

Accurate quantum efficiency measurement not only provides crucial information for the photovoltaic cell industry but also supports experiments aimed at directly detecting dark matter and elastic neutrino interactions. The dark matter direct searches paradigm has recently expanded to include particles with masses below 1,MeV/c2, where the expected signal in an electron–recoil interaction is approximately in the eV range, just above the energy gap for silicon and germanium. A robust calibration method for ionization signals in this lower energy region is essential. This paper presents a method for measuring quantum efficiency and yield (q/E) in semiconductors using phonon-mediated calorimetry. The Neganov–Trofimov–Luke phonon amplification method in low-temperature semiconductor crystals has been employed to indirectly measure ionization down to single-electron accuracy. Specifically, at zero bias, the phonon readout directly quantifies the total energy deposited within the detector, independent of the ionization yield. This eliminates a significant source of systematic uncertainty in quantum efficiency estimates associated with total energy uncertainty. The paper includes results from an updated ionization efficiency measurement in a germanium detector.

Imbalanced Surface Charge Induced Phase Segregation in Mixed Halide Perovskites

AbstractAlloying the metal halide perovskite composition has become a key strategy for engineering the optoelectronic properties for various applications. However, the difference in complexation between ions poses a threat to crystal stability. In particular, the phase segregation in wide‐bandgap perovskites (WBG) with mixed halides is the major challenge in multi‐junction photovoltaic devices. Here, a systematic study is reported on the origin of phase segregation in a prototypical mixed halide perovskite (MHP) MAPbI2Br. It is found that the crystallinity and surface morphology are not associated with the lattice stability. Using highly sensitive external quantum efficiency (s‐EQE) measurement, it is found that the defects in the MHP are mainly associated with the Pb2+ and I−/Br− ions. Consistently, density‐function‐theory (DFT) calculation confirms that the MAPbI2Br surface is dominated by the metal‐halide components, and the imbalanced surface charge is responsible for the lattice instability. The role of physical and chemical passivation approaches in MHP is further investigated. The former limits the ion migration and allows dissociated ions to recover to their corresponding defective sites, whereas the latter lowers the surface energy by neutralizing the charge density on the lattice surface. This work brings insight into the phase segregation and passivation mechanisms in MHP.

Laser ablation of thin SiN x layer coated on silicon wafer—evaluation of process performance for PERC solar cell application

In fabricating passivated emitter and rear contact (PERC) solar cells, creating small openings on the SiN x coated silicon substrate to establish metal contacts necessitates using a nanosecond pulsed green laser for ablation. However, the thermal nature of laser ablation poses a challenge. Excessive nitrogen diffusion from SiN x into the silicon substrate can compromise the electrical performance of solar cells. Therefore, this study aims to comprehensively understand how laser parameters impact the electrical properties of such solar cells. PERC solar cell precursors were initially fabricated by ablating the SiN x layer at four laser fluences, each corresponding to different regimes: solid, liquid, vapor, and phase explosion. Subsequently, various optical, chemical, and electrical characterizations were conducted on the solar cell precursors. Complete PERC solar cells were also fabricated to measure quantum efficiency (QE). In the solid regime, SiN x removal is precise, with minimal thermal damage, resulting in a nitrogen concentration of approximately 0.15%. Photoluminescence count and carrier lifetime are notably higher by 21% in the solid regime compared to the explosive regime. The QE measurement at 984 nm quantitatively assesses rear-side recombination losses. Notably, 26% of the area exhibits a 56% QE in the solid state, while this number drops to around 22% in the explosive state. This decline can be attributed to increased thermal damage in the explosive regime, which augments recombination centers and diminishes the solar cell performance. PERC solar cells ablated in the solid regime showcase lower subsurface damage, superior electrical characteristics, and higher performance than those ablated in the explosive regime.

Light-Emitting Diodes for Energy Harvesting

Energy harvesting is gaining substantial relevance in the realm of ultra-low-power electronics and Internet-of-Things devices with limited access to classic power sources. Several harvesting approaches are available, depending on the energy source; among them, photovoltaic devices benefit from the highest energy density. However, the inclusion of a dedicated photovoltaic cell in a low-power system may result in increased costs and complexity, thus hampering economic sustainability. Conversely, electronic apparatuses often make use of light-emitting-diodes (LEDs), which could be effectively employed as photovoltaic energy harvesters whenever not actively generating photons. Here, we explore the potentials of commercially available LEDs for energy harvesting and determine their quantum efficiency. We examine the correlation of the latter with the spectral response and the available light, demonstrating that visible-wavelength diode emitters can yield very high conversions in the photovoltaic mode. We report measured quantum efficiencies as high as 39% under low-intensity (100 µW/cm2) fluorescent illumination.

Zirconium doped indium oxide thin films as transparent electrodes for photovoltaic applications

In this work we report on ultra-thin Zirconium doped In2O3 transparent conductive films grown at room temperature via RF-Magnetron co-sputtering. Samples from 15 nm to 90 nm thick, and low Zr atomic concentration (0.6–0.9 at.%), were annealed at T = 200 °C after the deposition. The phase-transition from amorphous to crystalline, confirmed by XRD measurements, leads to an improvement of both electrical and optical properties. The thinnest film (15 nm) shows electrical resistivity as low as 5 × 10−4 Ωcm, with carrier mobility of 20 cm2V−1s−1, and optical transmittance up to 80 % in visible and near-infrared range. IZrO electrode performances were tested through external quantum efficiency (EQE) measurements on a semi-finite Silicon Heterojunction bi-facial solar cell. The EQE values for 90 nm thick film are comparable to that of standard ITO when IZrO films are implemented as front electrodes. These results suggest that ultra-thin IZrO films may be successfully used to reduce costs and the amount of Indium used in Indium-based transparent conductive oxide layers for solar cells.

RF sputtered metal oxide layers as ARCs to improve photovoltaic performance of commercial monocrystalline solar cell

The rf-sputtered ZnO, MgO and Al2O3 transition metal oxide nano layers were developed as efficient antireflection coatings (ARCs) on commercial monocrystalline silicon (m-Si) photovoltaic cells. Wavelength dependence reflectance measurements show minimal reflectance (i.e., ∼1.3–2.0%) between 350 and 800 nm wavelength regions affirming antireflection behavior of oxide layers. The phase formation studies of these oxide layers display the crystalline phase however the presence of non-crystalline phase is noted in Al2O3 diffractogram pattern. Cross section microstructure characterization carried out using scanning electron microscopy (SEM) to know the ARC layer thickness illustrates MgO, ZnO and Al2O3 layers with coating thickness around 85 nm, 87 nm and 77 nm respectively. Also, the thickness of antireflection coatings computed using wavelength dependent refractive index measurement is consistent with cross section microstructure images. Photon to energy conversion (PEC) of ARC coated device under 1 sun condition display 1.99%, 1.07% and 0.39% improvement in efficiencies compared with commercial m-Si-solar cell endorsing suitability of selected transition metal oxides as efficient ARC materials. The external quantum efficiency (EQE) measurements show notable improvement in efficiency for MgO, ZnO and Al2O3 coated devices reaffirming their usability as efficient ARC materials on commercial m-Si-solar cells.

Light emitting diode and laser diode system behaviour description and their performance signature measurements

Abstract This paper has clarified the light emitting diode and laser diode system behaviour description and their external quantum efficiency measurements. Light output of LED spontaneous emission and laser diode stimulated emission are clarified. Stimulated and amplified spontaneous emission of laser diode and LED system configuration are demonstrated. The management of hybrid light sources spectrum illumination interaction for efficient solar cells light intensity and short circuit current density enhancement. The laser diode has presented better performance in the light output power especially under the same temperature effects. It is ensured that the dramatic effects of the temperature on both laser diode performance efficiency.

Tuning the luminescence color of Eu3+- and alkali-ion-codoped Sr2CaWO6 orange-red phosphors: Eu3+ site distribution and site-selective photoluminescence studies

In this study, Eu3+- and alkali-ion (M+)-codoped Sr2CaWO6:x (Eu3+, M+) (x = 0.01–0.10) were synthesized via a solid-state reaction. The effects of different Sr/Ca ratios, types of monovalent metal ions (M+ = Na+, K+, and Li+), and doping concentrations were systematically investigated. The crystalline phase, photoluminescence (PL) properties, lattice site occupied by the Eu3+ ion, Eu3+ site distribution, and site-selective PL properties were evaluated by x-ray diffraction, PL/photoluminescence excitation (PLE) spectroscopy with a monochromatic light source, PL quantum efficiency (QE) measurements, and high-resolution PL/PLE spectroscopy with a wavelength-tunable laser. A dependence of the PL asymmetry ratio for the 5D0–7F1,2 transitions on the Sr/Ca ratio was identified and quantified for the first time. Based on the site-selective PL measurements, this behavior was ascribed to the enhancement of Eu3+ local distortion by Sr2+ substitution at the A site at lower Sr/Ca ratios (<2) and to the high symmetry of the ligand structure of EuO6 octahedra owing to Ca2+ substitution at the B site at higher Sr/Ca ratios (>2). The PLE results provided insight into the Eu3+ site distribution, which explained the orange-red PL and PL QEs of the synthesized phosphors.

Mean transverse energy, surface chemical and physical characterization of CERN-made Cs-Te photocathodes

Cesium telluride photocathodes are known to offer high quantum efficiencies under UV illumination combined with good lifetimes compared to other semiconductor photocathodes, making them very popular electron sources for particle accelerator applications. The development of photocathode preparation, characterization, and related expertise at a single accelerator laboratory can be challenging, expensive, and time consuming. Recognizing this, we explored the use of a custom-designed ultrahigh vacuum suitcase for transportation of CERN-made (Switzerland) cesium telluride photocathodes to Daresbury Laboratory (UK) for characterization. We report the synthesis and characterization of a batch of four cesium telluride photocathodes corresponding to our second attempt of transport, following design and process improvements through lessons learned from our first attempt. The photocathode characterization involved, where possible, measurements of the surface elemental composition using x-ray photoelectron spectroscopy (XPS), surface roughness with an in-vacuum scanning tunneling microscope (STM), and quantum efficiency (QE) measurements. Transverse energy distribution curves were obtained over a wide range of illumination wavelengths using the transverse energy spread spectrometer (TESS) at room- and cryogenic temperatures, and the values for mean transverse energy (MTE) were extracted. The photocathodes exhibited distinct thicknesses ranging from ∼50 to ∼120 nm and significant MTE beyond the photoemission threshold which is attributed to the presence of CsxO and Cs phases, as confirmed by XPS analysis. The photocathode that exhibited no carbon or oxygen contamination was measured to have the highest QE of 2.9% at a wavelength of 265 nm at the end of the performance characterization process. The results presented herein offer an insight into the achievements possible through international collaborations by successfully utilizing long-distance transportation of photocathodes by land under ultrahigh vacuum conditions. Published by the American Physical Society 2024