Abstract
The rf-sputtered ZnO, MgO and Al2O3 transition metal oxide nano layers were developed as efficient antireflection coatings (ARCs) on commercial monocrystalline silicon (m-Si) photovoltaic cells. Wavelength dependence reflectance measurements show minimal reflectance (i.e., ∼1.3–2.0%) between 350 and 800 nm wavelength regions affirming antireflection behavior of oxide layers. The phase formation studies of these oxide layers display the crystalline phase however the presence of non-crystalline phase is noted in Al2O3 diffractogram pattern. Cross section microstructure characterization carried out using scanning electron microscopy (SEM) to know the ARC layer thickness illustrates MgO, ZnO and Al2O3 layers with coating thickness around 85 nm, 87 nm and 77 nm respectively. Also, the thickness of antireflection coatings computed using wavelength dependent refractive index measurement is consistent with cross section microstructure images. Photon to energy conversion (PEC) of ARC coated device under 1 sun condition display 1.99%, 1.07% and 0.39% improvement in efficiencies compared with commercial m-Si-solar cell endorsing suitability of selected transition metal oxides as efficient ARC materials. The external quantum efficiency (EQE) measurements show notable improvement in efficiency for MgO, ZnO and Al2O3 coated devices reaffirming their usability as efficient ARC materials on commercial m-Si-solar cells.
Published Version
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