The effects of a point charge inside a semiconductor crystallite on the electron, hole and electron-hole (e-h) pair ground quantum-confined states have been studied under the effective-mass approximation by means of the variational-perturbation approach. The electron, hole and e-h pair ground quantum-confined state energy as functions of the crystallite radius, the charge position inside the crystallite have been obtained. The validity of the variational-perturbation method is presented. Effects of this point charge on the optical properties of the crystallite have also been discussed.