Abstract
We present a formula for the interdiffusion process of quantum well structures. This formula contains three parameters: the interdiffusion coefficient in the barrier layer, D b, that in the well layer, D w, and the concentration ratio of diffused species at interface, k. This formula explained quantum confinement energy shifts as a function of the well width, and annealing time. Comparing the energy shifts measured in our In 0.53Ga 0.47As/InP quantum well structures after annealing with that calculated from the formula, we determined the D b, D w, and k of the group-V atoms (P and As) in this system. From the dependence of these parameters on annealing temperature, we determined interdiffusion activation energies to be 0.53 eV in the well layer and 8.4 eV in the barrier layer.
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