Abstract

GaAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum-well wires with lateral dimensions of 70 nm have been prepared by mesa etching of 14-nm-wide quantum-well systems. In photoluminescence excitation two heavy-hole (hh) exciton transitions, ${\mathrm{hh}}_{11}$ and ${\mathrm{hh}}_{12}$, separated by 2.5 meV, were observed. These transitions result from 1D quantum-confined energy states in the narrow wires. The 1D character was reflected in a strong polarization dependence and in a unique magnetic field behavior indicating an enhancement of the excitonic interaction of the 1D ground state by about 15%.

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