Quality 3C-SiC Research Articles

The beneficial role of flash lamp annealing on the epitaxial growth of the 3C–SiC on Si

For the realization of good quality 3C–SiC films epitaxially grown on Si, the perfection of the film during the early stage of growth is substantial. In this paper, the beneficial role of flash lamp annealing (FLA) for the elimination of the defects in the SiC films and the strain reduction at the SiC/Si interface is discussed. FLA is a highly transient process having a flash duration of a few milliseconds. When the energy density is sufficiently high, it melts the silicon at the SiC/Si interface increasing the temperature there well above the melting point of silicon. The melted Si dissolves the 3C–SiC near the interface. Additionally, the uppermost part of the 3C–SiC film is annealed due to the heat dissipation during the flash duration and the solidification of the molten region. During the solidification of the C-rich Si melt, SiC grows by liquid phase epitaxy at the annealed uppermost 3C–SiC film which acts as a seed. This process results in a substantial improvement of the SiC film eliminating also the cavities and the stress at the interface.

Growth Chemistry and Interface Characterization of Single Crystal SiC on Modified Si Surface.

Crystalline 3C-SiC films were grown on Si substrate whose surface has been modified with SiN x by NH 3 nitridation and their qualities were examined. The growth rate of 3C-SiC film increased with the increase of tetramethysilane (TMS) partial pressure. The growth reaction of 3C-SiC film was the 1st order with respect to TMS partial pressure. When SiC films were grown on pure Si surface, voids were observed in the silicon side of the SiC/Si interface. But void-free SiC films with a flat and smooth film/ substrate interface were grown on 60-min nitrided Si surfaces. Crystal quality of 3C-SiC grown on the nitrided Si substrate was better than that on pure Si. The growth mechanism of 3C-SiC films on the nitrided Si substrate was discussed in detail in this work.

Gas-source MBE of SiC/Si using monomethylsilane

We have conducted a systematic series of gas-source MBE experiments of 3C–SiC on Si(100) using monomethylsilane (MMS), and have investigated the relation between growth parameters (MMS pressure and growth temperature) and the grown film quality using atomic force microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and Auger electron spectroscopy. As a result, it was clarified that there exists a set of optimum growth parameters for the best surface morphology and crystallinity. The optimum temperature lowered with decreasing MMS pressure, and the crystallinity of the SiC film improved at the same time. In particular, a high quality 3C–SiC film on Si(100) was successfully grown at T=900°C.

Optimization of the carbonized buffer layer for the growth of high quality single crystal SiC on Si

ABSTRACTCarbonized buffer layers were formed on Si (100) nominally oriented substrates with propane diluted in palladium purified hydrogen in a cold wall vertical reactor. Subsequent SiC layers were grown using silane and propane at atmospheric pressure. The growth temperature was ranging from 1150°C to 1350°C. The layers obtained were characterized by LT photoluminescence, IR reflectivity, X-ray diffraction, micro-Raman on cleaved edges, AFM imaging, and optical microscopy. Drastic influence on the layer surface morphology was evidenced depending on the transition step between the carbonization and the SiC epitaxial growth. As a result, we have developed a carbonization process leading to very high quality 3CSiC films grown at 1250°C.

Influence of the silicon overlayer thickness of SOI unibond substrates on β-SIC heteroepitaxy

The present paper describes the epitaxial growth of high quality 3C–SiC on the top of silicon on insulator (SOI) UNIBOND substrates, to achieve an electrical insulation. The process was performed at 1200°C using methylsilane as the precursor gas. The crystal quality was proved using X-ray analysis. The FWHM of the [200] rocking curve reflex was determined to 0.31° using a 200 nm thick SOL. A serial resistance of the SiO 2 layer of 2.5·10 12 Ω mm 2 was obtained at RT which proofs the insulation to the substrate. A technique based on sacrificial oxidation was applied to thin the silicon overlayer (SOL). SOLs between 15 and 200 nm could be prepared. The influence on the structural properties of the SiC film was studied using X-ray, AFM and TEM measurements. It was found that structural properties are dependent on the deposition process and on the SOL thickness. High quality SiC can be grown on SOLs thicker than 50 nm. Possibilities for the growth of highest quality SiC even on much thinner SOLs are discussed.

Deformation of nitrogen doped cubic polytype SiC

Abstract The mechanism of incorporation of nitrogen atoms into the 3C-SiC crystal lattice is discussed on the basis of comparison of the deformation coefficient, which was derived from experimental values of the normal component of deformation with the calculated values. High quality 3C-SiC epitaxial layers with a high nitrogen doping level were obtained using container-free liquid-phase epitaxy. The nitrogen concentration was determined by secondary-ion mass spectrometry. To determine the deformation, the rocking curves of symmetric Bragg reflections of first and second orders from {111} planes were measured using an X-ray double-crystal spectrometer.

Growth of improved quality 3C-SiC films on 6H-SiC substrates

Previously reported chemical vapor deposition of 3C-SiC on 6H-SiC has resulted in films with a high density of double positioning boundaries (DPBs). We have found that growth on as-grown faces of 6H-SiC crystals can yield films that are largely free of DPBs. The (111) 3C-SiC films, up to 12 μm thick, were evaluated by optical and electron microscopy and low-temperature photoluminescence (LTPL). The LTPL spectra of the films were similar to those of high quality Lely-grown 3C-SiC.