Abstract
Crystalline 3C-SiC films were grown on Si substrate whose surface has been modified with SiN x by NH 3 nitridation and their qualities were examined. The growth rate of 3C-SiC film increased with the increase of tetramethysilane (TMS) partial pressure. The growth reaction of 3C-SiC film was the 1st order with respect to TMS partial pressure. When SiC films were grown on pure Si surface, voids were observed in the silicon side of the SiC/Si interface. But void-free SiC films with a flat and smooth film/ substrate interface were grown on 60-min nitrided Si surfaces. Crystal quality of 3C-SiC grown on the nitrided Si substrate was better than that on pure Si. The growth mechanism of 3C-SiC films on the nitrided Si substrate was discussed in detail in this work.
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