Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

S.I Goloudina,V.P Sklizkova,V.V Luchinin,T.F Semenova,D.A Kirilenko,V.M Pasyuta,I.V Gofman,V.V Kudryavtsev,M.F Panov,A.N Smirnov,V.M Svetlychnyi

doi:10.1051/matecconf/20179804002

Abstract

High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111) substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111) film are aligned with four Si(111) planes at the SiC/Si interface. It was shown the SiC films (35 nm) grown on Si(111) at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on Si (100) substrate at the same temperature. It was shown the SiC films (30-35 nm) are able to cover the voids in Si substrate with size up to 10 μm.

Highlights

Among various semiconductor materials, silicon carbide (SiC) is an attractive material for high power, high frequency and high temperature microelectronics, owing in part to its wide band gap, high thermal conductivity, high break down field and high saturation velocity
The films formed after annealing of the polyimide films at 1000qC, 1100qC, 1200qC were studied by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM)
The high quality crystalline SiC films on Si can be fabricated by chemical vapor deposition (CVD) method [1, 2], thickness of such films is often more than several microns

Summary

Introduction

Silicon carbide (SiC) is an attractive material for high power, high frequency and high temperature microelectronics, owing in part to its wide band gap, high thermal conductivity, high break down field and high saturation velocity. Owing to its large ratio of Young’s modulus to density, SiC has attractive interest for use in ultra-high-frequency nanoelectromechanical system (NEMS) for wire-less signal-processing systems. This material has not been widely used because of the difficulties in growing high quality crystals and etching the material to form required pattern. The usual techniques to grow SiC-on-Si are chemical vapor deposition (CVD), laser sputtering, molecular beam epitaxy, and carbonization of a polyimide Langmuir-Blodgett (LB) film on silicon substrate. If the films thickness is less than one micron, it usually contains a large number of defects [3, 4]

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