Abstract
Abstract The mechanism of incorporation of nitrogen atoms into the 3C-SiC crystal lattice is discussed on the basis of comparison of the deformation coefficient, which was derived from experimental values of the normal component of deformation with the calculated values. High quality 3C-SiC epitaxial layers with a high nitrogen doping level were obtained using container-free liquid-phase epitaxy. The nitrogen concentration was determined by secondary-ion mass spectrometry. To determine the deformation, the rocking curves of symmetric Bragg reflections of first and second orders from {111} planes were measured using an X-ray double-crystal spectrometer.
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