AbstractElectron irradiation‐induced acceleration of self‐healing and high‐temperature oxidation has been discovered in SiC/Y2Si2O7–Y2SiO5 composites. Bulk samples were produced by pulsed electric current sintering. These samples were exposed to an electron beam from the pulsed intense relativistic electron beam accelerator with a beam energy of 2 MeV at irradiation doses of 10–40 kGy. The self‐healing and high‐temperature oxidation experiments were carried out at 1100–1300°C for 1–24 h in laboratory air. Electron irradiation significantly improved the self‐healing effectiveness. The closure of surface cracks was caused by the volume expansion of SiC via transformation to SiO2 and the outward diffusion of Y3+ ions. Electron irradiation also increased the thickness of the internally oxidized zone, formed by the inward diffusion of O2− ions. Enhanced self‐healing and oxidation behavior were associated with defect formation induced by electron beam exposure, which facilitated the diffusion of ions within the crystal lattice.
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