Properties Of Surface States Research Articles

Observation of Landau quantization and standing waves in HfSiS

Recently, HfSiS was found to be a new type of Dirac semimetal with a line of Dirac nodes in the band structure. Meanwhile, Rashba-split surface states are also pronounced in this compound. Here we report a systematic study of HfSiS by scanning tunneling microscopy/spectroscopy at low temperature and high magnetic field. The Rashba-split surface states are characterized by measuring Landau quantization and standing waves, which reveal a quasi-linear dispersive band structure. First-principles calculations based on density-functional theory are conducted and compared with the experimental results. Based on these investigations, the properties of the Rashba-split surface states and their interplay with defects and collective modes are discussed.

Thermoelectric Properties of Topological Insulators

Many efficient thermoelectric materials belong to the class of topological insulators. Therefore, in recent years considerable efforts have been made to elucidate the influence of nontrivial electronic topology on the thermoelectric properties of thermoelectrics. This review describes the basic transport properties of helical surface states of topological insulators. Their effect on the thermoelectric efficiency of materials is discussed. The main attention is paid to (Bi,Sb)2(Te,Se)3 alloys, which combine the properties of the best thermoelectrics and a model topological insulator.

Local modification of the surface state properties at dilute coverages: CO/Cu(111)

We follow the diffusion of CO molecules on Cu(111) by time-lapsed low-temperature scanning tunneling microscopy. The diffusivity of individual CO molecules oscillates with the distance to its nearest neighbor due to the long-range interaction mediated by the surface state electrons. The markedly different wavelengths of the oscillation at a coverage of 0.6% ML as compared to the one at 6% ML coverage correspond to two different wavelengths of the surface state electrons, consistent with a shift of the surface state by 340 meV. This surprisingly large shift as compared to results of averaging methods suggests a local modification of the surface state properties.

Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer.

We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. We show that a HgCdTe barrier can be used to protect the HgTe from direct contact with the ferromagnet, leading to very high conversion rates, with inverse Edelstein lengths up to 2.0±0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency is found to differ strongly from what is expected in spin Hall effect systems. These measurements, associated with the temperature dependence of the resistivity, suggest that these high conversion rates are due to the spin momentum locking property of HgTe surface states.

Transmission Spectra of HgTe-Based Quantum Wells and Films in the Far-Infrared Range

Strained 80-nm-thick HgTe films belong to a new class of materials referred to as three-dimensional topological insulators (i.e., they have a bulk band gap and spin-nondegenerate surface states). Though there are a number of studies devoted to analysis of the properties of surface states using both transport and magnetooptical techniques in the THz range, the information about direct optical transitions between bulk and surface bands in these systems has not been reported. This study is devoted to the analysis of transmission and reflection spectra of HgTe films of different thicknesses in the far-infrared range recorded in a wide temperature range in order to detect the above interband transitions. A peculiarity at 15 meV, which is sensitive to a change in the temperature, is observed in spectra of both types. Detailed analysis of the data obtained revealed that this feature is related to absorption by HgTe optical phonons, while the interband optical transitions are suppressed.

Surface State Dynamics Dictating Transport in InAs Nanowires.

Because of their high aspect ratio, nanostructures are particularly susceptible to effects from surfaces such as slow electron trapping by surface states. However, nonequilibrium trapping dynamics have been largely overlooked when considering transport in nanoelectronic devices. In this study, we demonstrate the profound influence of dynamic trapping processes on transport in InAs nanowires through an investigation of the hysteretic and time-dependent behavior of the transconductance. We observe large densities (∼1013 cm-2) of slow surface traps and demonstrate the ability to control and permanently fix their occupation and charge through electrostatic manipulation by the gate potential followed by thermal deactivation by cryogenic cooling. Furthermore, we observe a transition from enhancement- to depletion-mode and a 400% change in field-effect mobility within the same device when the initial gate voltage and sweep rate are varied, revealing the severe impact of electrostatic history and dynamics on InAs nanowire field-effect transistors. A time-dependent model for nanowire transconductance based on nonequilibrium carrier population dynamics with thermally activated capture and emission was constructed and showed excellent agreement with experiments, confirming the effects to be a direct result of the dynamics of slow surface traps characterized by large thermal activation barriers (∼ 700 meV). This work reveals a clear and direct link between the electrical conductivity and the microscopic interactions of charged species with nanowire surfaces and highlights the necessity for considering dynamic properties of surface states in nanoelectronic devices.

Topological Insulators for Mode-locking of 2-μm Fiber Lasers

We performed density functional theory calculations for the topological insulators (TIs) of Bi2Se3 and CoSb3 (skutterudite) in a comparison with Bi2Te3 and In2Co4 Sb12 (filled skutterudite) to explore whether the former TIs can serve as saturable-absorption materials for laser mode-locking at the wavelengths of 2 μm and beyond. The calculated electronic-band structures and optical-absorption spectra indicate the potential of these TIs in terms of midinfrared saturable-absorption applications. Especially, in consideration of the film and bulk forms of Bi2Se3 and Bi2Te3, we investigated the electronic and/or optical properties of the metallic surface states and the semiconducting interior states, respectively. They exhibited an excellent broadband operability regardless of the state, and particularly, we noted a linearly dispersive relation around the Fermi levels of all of the electrons of the Bi2Se3 surface in both the conduction and valence bands, whereas this is not evident for Bi2Te3. Assuming the importance of linear dispersion for a fast electronic relaxation, and considering the decent oxidation resistance of the Bi2Se3 surface, we suggest that Bi2Se3 is superior to Bi2Te3 for midinfrared mode-locking. A review of the experimental studies regarding TI-based 2-μm saturable absorbers that have been performed so far is presented, and the discussion and rationalization of the possible universality of TIs regarding mid- to far-infrared passive mode lockers results in the suggestion of a new CoSb3-TI-based saturable absorber.

Спектры пропускания квантовых ям и пленок на основе HgTe в дальнем ИК-диапазоне

AbstractStrained 80-nm-thick HgTe films belong to a new class of materials referred to as three-dimensional topological insulators (i.e., they have a bulk band gap and spin-nondegenerate surface states). Though there are a number of studies devoted to analysis of the properties of surface states using both transport and magnetooptical techniques in the THz range, the information about direct optical transitions between bulk and surface bands in these systems has not been reported. This study is devoted to the analysis of transmission and reflection spectra of HgTe films of different thicknesses in the far-infrared range recorded in a wide temperature range in order to detect the above interband transitions. A peculiarity at 15 meV, which is sensitive to a change in the temperature, is observed in spectra of both types. Detailed analysis of the data obtained revealed that this feature is related to absorption by HgTe optical phonons, while the interband optical transitions are suppressed.

Lifetime and surface-to-bulk scattering off vacancies of the topological surface state in the three-dimensional strong topological insulators Bi2Te3 and Bi2Se3

We analyze the finite lifetimes of the topologically protected electrons in the surface state of Bi2Te3 and Bi2Se3 due to elastic scattering off surface vacancies and as a function of energy. The scattering rates are decomposed into surface-to-surface and surface-to-bulk contributions, giving us new fundamental insights into the scattering properties of the topological surface states (TSS). If the number of possible final bulk states is much larger than the number of final surface states, then the surface-to-bulk contribution is of importance, otherwise the surface-to-surface contribution dominates. Additionally, we find defect resonances that have a significant impact on the scattering properties of the TSS. They can strongly change the lifetime of the surface state to vary between tens of fs to ps at surface defect concentrations of 1 at%. We also see that the effective scattering angle shows a strong dependence on the Fermi surface warping. Our results compare fairly well with available experiments.

One-pot synthesis of bismuth silicate heterostructures with tunable morphology and excellent visible light photodegradation performances

Construction of a heterostructure to prolong the life of electron-hole pairs is a very important approach to endow it with excellent photodegradation performances. Particularly, one-pot synthesis of heterostructures with the same component but different crystal structures to form a proper band gap is still challenging. Herein, bismuth silicate (BSO) heterostructures are synthesized using a one-pot hydrothermal approach without adding any other inorganic components. The crystal phase, morphology, surface state, and photochemical properties of the BSO materials are precisely tuned to fabricate two kinds of bismuth silicate heterostructures: rod-like Bi2SiO5/Bi12SiO20 and flower-like Bi2SiO5/Bi4Si3O12 heterostructures. Thanks to the two heterostructures and clean surface, the optimized BSO material exhibits a highly active photocatalytic performance with a remarkable cycling stability. It photodegrades Rhodamine B under visible light irradiation as fast as 15min with the reaction rate constants k and ks to be 0.399min−1 and 0.698min−1Lm−2, respectively, which is up to 189 times faster than reported.

Two-dimensional lattice model for the surface states of topological insulators

The surface states in three-dimensional (3D) topological insulators (TIs) can be described by a two-dimensional (2D) continuous Dirac Hamiltonian. However, there exists the Fermion doubling problem when putting the continuous 2D Dirac equation into a lattice model. In this letter, we introduce a Wilson term with a zero bare mass into the 2D lattice model to overcome the difficulty. By comparing with a 3D Hamiltonian, we show that the modified 2D lattice model can faithfully describe the low-energy electrical and transport properties of surface states of 3D TIs. So this 2D lattice model provides a simple and cheap way to numerically simulate the surface states of 3D TI nanostructures. Based on the 2D lattice model, we also establish the wormhole effect in a TI nanowire by a magnetic field along the wire and show the surface states being robust against disorder. The proposed 2D lattice model can be extensively applied to study the various properties and effects, such as the transport properties, Hall effect, universal conductance fluctuations, localization effect, etc.. So it paves a new way to study the surface states of the 3D topological insulators.

The Role of Surface States in the Electrochemical Behavior of Semiconductor-Electrolyte Interfaces from First Principles

Solar energy is the most abundant energy source available to humankind; however, this energy cannot be harnessed on demand due to the variability of sunlight. Artificial photosynthesis offers a sustainable way to overcome that variability through the photocatalytic conversion of solar power into chemical fuels at a semiconductor–electrolyte interface. Although considerable progress has been made in simulating the bulk properties of semiconductors from first principles, much less has been done to address the electrochemical response of electrified semiconductor–electrolyte interfaces under realistic environmental conditions. In particular, band bending and surface states are two important contributors to the photogeneration of electrical current at semiconductor–electrolyte interface. We present a broadly applicable and highly transferable computational techniques to simulate semiconductor–electrolyte interfaces. By introducing a continuum model of the semiconductor and electrolyte regions surrounding the quantum-mechanical interfacial layer, the model enables for the self-consistent determination of the surface states and of the Schottky barriers that subsequently form within the space charge of the semiconductor electrodes. Validation of these simulations is provided by the analysis of experimental charge-voltage measurements, focusing on the photovoltage region close to the onset of the photocurrent, which depends strongly on the properties of surface states. Our model provides a detailed understanding of the electrochemical stability and intrinsic current–voltage response of semiconductor electrodes taking into account the surface states that arise from the adsorption of oxygen and hydrogen species towards optimizing photocatalytic performance.

Bi2Te3 photoconductive detectors on Si

The peculiar properties of the gapless surface states with a Dirac cone shaped energy dispersion in topological insulators (TIs) enable promising applications in photodetection with an ultra-broad band and polarization sensitivity. Since many TIs can be easily grown on silicon (Si) substrates, TIs on Si could make an alternative route for photon detection of Si photonics. We present good device performances of a Si-based single-crystal bismuth telluride (Bi2Te3) photoconductive detector. Room temperature photo responses to 1064 nm and 1550 nm light illumination were demonstrated. Linear dependences of the photocurrent on both the incident light power and the bias voltage were observed. The main device parameters including responsivity and quantum efficiency were extracted.

First-Principles Study on Positron States at Li-Adsorbed Al(100) Surfaces: Effect of Electron-Positron Correlation

We investigated positron states at Li-adsorbed Al(100) surfaces using \textit{ab-initio} two-component density functional theory. The results thus obtained by using semi-local electron-positron (e-p) correlation functionals with the generalized gradient approximation well reproduce the experimental results, showing that reliable e-p correlation functionals are needed to properly describe the various properties of positron surface state.

Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties

Conductive Ga2O3 thin films with an In2O3 buffer layer have been prepared on c-plane sapphire substrates using a laser molecular beam epitaxy technique. The effects of the In2O3 buffer layer on the structure and optical, electrical and surface state properties of the Ga2O3 films have been studied. The change in conductivity of the thin films is attributed to different thicknesses of the In2O3 buffer layer, which determine the concentration of charge carriers injected into the upper Ga2O3 layer from the interface of the bilayer thin films. In addition, the increase in flat band voltage shift and capacitance values as the In2O3 buffer layer thickens are attributed to the increase in surface state density, which also contributes to the rapid shrinkage of the optical band gap of the Ga2O3. With transparency to visible light, high n-type conduction and the ability to tune the optical band gap and surface state density, we propose that Ga2O3/In2O3 bilayer thin film is an ideal n-type semiconductor for fabrication of transparent power devices, solar cell electrodes and gas sensors.

Spin to Charge Interconversion Phenomena in the Interface and Surface States

In 1985, Johnson and Silsbee realized the creation of a spin current in nonmagnetic metals, which inspired a vast number of studies related to the spin current until now. Creation of the spin current has been realized in metals, semiconductors, and insulators to date and has provided a fruitful research field. Spin-dependent conductance and spin torque paved a new way for spintronic application, and highly efficient interconversion between spin information and an industrially used one, such as charge current, light, magnetic moment and heat current, became a central topic. In the early stage, the main field of such interconversion was bulk materials; the focus then gradually shifted to surface and interface states. The properties of surface and interface states became pronounced in nanoscale spintronics devices, and a variety of functions have been realized at the interface between two materials, enabling limitless possibilities for spin functions. This review provides an overview of the recent progress o...

Engineering and Probing Topological Properties of Dirac Semimetal Films by Asymmetric Charge Transfer.

Dirac semimetals (DSMs) have topologically robust three-dimensional Dirac (doubled Weyl) nodes with Fermi-arc states. In heterostructures involving DSMs, charge transfer occurs at the interfaces, which can be used to probe and control their bulk and surface topological properties through surface-bulk connectivity. Here we demonstrate that despite a band gap in DSM films, asymmetric charge transfer at the surface enables one to accurately identify locations of the Dirac-node projections from gapless band crossings and to examine and engineer properties of the topological Fermi-arc surface states connecting the projections, by simulating adatom-adsorbed DSM films using a first-principles method with an effective model. The positions of the Dirac-node projections are insensitive to charge transfer amount or slab thickness except for extremely thin films. By varying the amount of charge transfer, unique spin textures near the projections and a separation between the Fermi-arc states change, which can be observed by gating without adatoms.

Spin injection and inverse Edelstein effect in the surface states of topological Kondo insulator SmB6

There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TIs), a class of quantum materials, have special gapless edge/surface states, where the spin polarization of the Dirac fermions is locked to the momentum direction. This spin–momentum locking property gives rise to very interesting spin-dependent physical phenomena such as the Edelstein and inverse Edelstein effects. However, the spin injection in pure surface states of TI is very challenging because of the coexistence of the highly conducting bulk states. Here, we experimentally demonstrate the spin injection and observe the inverse Edelstein effect in the surface states of a topological Kondo insulator, SmB6. At low temperatures when only surface carriers are present, a clear spin signal is observed. Furthermore, the magnetic field angle dependence of the spin signal is consistent with spin–momentum locking property of surface states of SmB6.

Existence of topological nontrivial surface states in strained transition metals: W, Ta, Mo, and Nb

In a joint theoretical and experimental investigation we show that a series of transition metals with strained body-centered cubic lattice ---W, Ta, Nb, and Mo--- host surface states that are topologically protected by mirror symmetry. Our finding extends the class of topologically nontrivial systems by topological crystalline transition metals. The investigation is based on independent calculations of the electronic structures and of topological invariants, the results of which agree with established properties of the Dirac-type surface state in W(110). To further support our prediction, we investigate both experimentally by spin-resolved inverse photoemission and theoretically an unoccupied topologically nontrivial surface state in Ta(110).

Strain induced novel quantum magnetotransport properties of topological insulators

Recent theoretical and experimental researches have revealed that the strained bulk HgTe can be regarded as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the transport properties of the HgTe surface states, which are modulated by a weak 1D in-plane electrostatic periodic potential in the presence of a perpendicular magnetic field. We analytically derive the zero frequency (dc) diffusion conductivity for the case of quasielastic scattering in the Kubo formalism, and find that, in strong magnetic field regime, the Shubnikov–de Haas oscillations are superimposed on top of the Weiss oscillations due to the electric modulation for null and finite strain. Furthermore, the strain is shown to remove the degeneracy in inversion symmetric Dirac cones on the top and bottom surfaces. This accordingly gives rise to the splitting and mixture of Landau levels, and the asymmetric spectrum of the dc conductivity. These phenomena, not known in a conventional 2D electron gas and even in a strainless TI and graphene, are a consequence of the anomalous spectrum of surface states in a fully stained TI. These results should be valuable for electronic and spintronic applications of TIs, and thus we fully expect to see them in the further experiment.