Properties Of SnS Thin Films Research Articles

Effect of Thickness on Structural, Optical and Sensing Properties of SnS Thin Films Prepared by Ultrasonic Nebulizer Method

Effect of Thickness on Structural, Optical and Sensing Properties of SnS Thin Films Prepared by Ultrasonic Nebulizer Method

Comparison the effects of Se and Te inclusion on the physical and electrochemical properties of SnS thin films

In this research, materials containing pure SnS, Se-incorporation SnS, and Te-incorporation SnS thin films were electrochemically deposited on fluorine-doped tin oxide (FTO) glass substrates using an aqueous solution. Deposition parameters including bath temperature, deposition time, deposition potential, and the pH of the solution have been kept constant for all samples. The synthesized thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), room temperature photoluminescence (PL), and UV–vis spectroscopy. The XRD patterns showed that the crystalline quality of SnS thin film was improved after Se-incorporation; while it was decreased after Te-incorporation. Since Se2- and Te2- have greater ionic radii than S2-, the inter-planar space and the unit cell volume of SnS have been increased after Se- and Te-incorporation. In addition, the morphology of pure SnS thin film was changed from grain-like to columnar sheets-like due to Se- and Te-incorporation. PL spectra showed four peaks including a blue emission peak at 478 nm, a green emission peak at 557 nm, an orange emission peak at 602 nm, and an IR peak at 833 nm, which correspond to Sn vacancies, Sn interstitials, S interstitials, and band-to-band transition, respectively. Moreover, the PL peaks spectra showed a red-shift due to Se- and Te-incorporation. UV–vis spectroscopy analysis exhibited that the absorption properties of SnS were improved because of Se- and Te-incorporation. Therefore, the SnS thin films incorporation with Se and Te impurities were appropriate to be used as an absorber layer in solar cells. The band gap energy (Eg) of pure SnS is decreased from 1.5 ± 0.1 eV to 1.4 ± 0.1 eV due to Se- and Te-incorporation. The Mott-Schottky analysis showed that the conductivity of all deposited samples was p-type. The results of EIS demonstrated that the charge transfer resistance (Rct) of the pure SnS film was decreased sharply after incorporation. Also, the photoelectrochemical cell (PEC) performance of pure SnS was improved because of incorporation.

Structural and Optical Properties of SnS Thin Films Deposited by RF Magnetron Sputtering

Structural and Optical Properties of SnS Thin Films Deposited by RF Magnetron Sputtering

Effect of substrate on the structural, optical and electrical properties of SnS thin films grown by thermal evaporation method

Tin sulfide thin films were deposited on different substrates by thermal evaporation technique. The effect of substrate on the growth of SnS thin films has been studied thoroughly. X-Ray Diffractrometry pattern shows that the deposited films are showing (111) orientation having primitive type orthorhombic structure and those deposited on glass/ZnO:Al has better crystallinity and less dislocation density than the others. Small cracks are visible on the surface and that may be due to the higher dislocation density or strain exerted on the surface. Different types of substrate also shifts the absorption edge of the films deposited on different substrates. Electrical characteristics obtained from Hall Effect measurements show the films deposited on glass/ZnO:Al has better mobility and less resistivity than the films deposited on other substrates. Electric potential-current characteristics shows ohmic and rectifying behavior as the substrate is changed.

Impact of deposition temperature on the properties of SnS thin films grown over silicon substrate—comparative study of structural and optical properties with films grown on glass substrates

Tin sulfide (SnS) thin films were chemically deposited over silicon substrate in a temperature range of 250 °C–400 °C. The effects of deposition temperature on the structural, morphological and optical properties of the films were evaluated. All films present an orthorhombic SnS structure with a preferred orientation along (040). High absorption coefficients (in the range of 105 cm−1) were found for all obtained films with an increase in α value when deposition temperature decreases. Furthermore, the effects of substrate type were investigated based on comparison between the present results and those obtained for SnS films grown under the same deposition conditions but over glass substrate. The results suggest that the formation of SnS films onto glass substrate is faster than onto silicon substrate. It is found that the substrate nature affects the orientation growth of the films and that SnS films deposited onto Si present more defects than those deposited onto glass substrate. The optical transmittance is also restricted by the substrate type, mostly below 1000 nm. The obtained results for SnS films onto silicon suggest their promising integration within optoelectronic devices.

Development of SnS (FTO/CdS/SnS) thin films by nebulizer spray pyrolysis (NSP) for solar cell applications

Herein we report a well-organized analysis on various key-properties of SnS thin films for solar cell fabricated by nebulizer spray pyrolysis technique. X-ray diffraction study reveals the polycrystalline nature of deposited films with orthorhombic crystal structure. The crystallite size was calculated and observed to be in the range of 8–28 nm with increasing molarity of precursor solution. The stoichiometry composition of SnS was confirmed by EDX study. SEM/AFM studies divulge the well-covered deposited surface with spherical grains and the size of grains is increasing with concentration and so the roughness. A remarkable decrease in band gap from 2.6 eV to 1.6 eV was noticed by raising the molar concentration from 0.025 M up to 0.075 M. A single strong emission peak at about 825 nm is observed in PL spectra with enhanced intensity which may be attributed to near band edge emission. From the Hall effect measurement, it was found that the SnS thin film exhibits p-type conductivity. The calculated values of resistivity and carrier concentration are 0.729 Ω cm and 3.67 × 1018/cm3 respectively. Furthermore, to study the photovoltaic properties of SnS thin films a heterojunction solar cell, FTO/n-CdS/p-SnS was produced and the conversion efficiency was recorded about 0.01%.

Impact of vacuum and nitrogen annealing on HVE SnS photoabsorber films

Researchers worldwide focus on new earth abundant and cheap absorber materials for use in thin film solar cells that allow wider use of photovoltaics in energy production. SnS is one of such promising absorber materials that comprises earth abundant elements (Sn, S). We describe here the effect of annealing of high vacuum evaporated (HVE) SnS thin films in vacuum and nitrogen atmosphere with relatively high pressures of nitrogen. SnS thin films with a thickness of 500nm were deposited onto the surface of glass by HVE at a substrate temperature of 300°C. The as-deposited SnS thin films were annealed at 500°C and 550°C for 1h in vacuum as well as in nitrogen with respect to ambient (N2) pressure that varied in the range of 500–2000mbar. We analyze crystalline quality, crystal structure, elemental and phase compositions, and electrical properties of SnS films before and after the annealing process and their changes. Our results show that the use of pressurized inert ambient, such as nitrogen, improves the crystalline quality as well as the electrical properties of SnS thin films. The enhanced growth of crystals and modification of microstructural properties of SnS thin films as a function of annealing conditions (type of ambient, annealing temperature and ambient pressure) are discussed in detail.

Substrate influences on the properties of SnS thin films deposited by chemical spray pyrolysis technique for photovoltaic applications

Herein, we report on tin monosulfide (SnS) thin films elaborated by the Chemical Spray Pyrolysis (CSP) technique onto various substrates as simple glass, ITO-, and Mo-coated glasses in order to study the influence of substrates on the physical and chemical properties of Sns thin films. Structural analysis revealed that all films crystallize in orthorhombic structure with (111) as the sole preferential direction without secondary phases. In addition, film prepared onto pure glass exhibits a better crystallization compared to films deposited onto coated glass substrates. Raman spectroscopy analysis confirms the results obtained by X-ray diffraction with modes corresponding well to SnS single-crystal orthorhombic ones (47, 65, 94, 160, 186, and 219 cm −1) without any additional parasite secondary phase like Sn2S3 or SnS2. Field emission scanning electron microscope revealed that all films have a cornflake-like particles surface morphology, and energy dispersive X-ray spectroscopy analysis showed the presence of sulfur and tin with a nearly stoichiometric ratio in films deposited onto pure glass. High surface roughness and large grains are observable in film deposited onto glass. From optical spectroscopy, it is inferred that band gap energy of SnS/glass and SnS/ITO were 1.64 and 1.82 eV, respectively.

Study on Properties of SnS Thin Films Fabricated by High Temperature Sulfurization

Study on Properties of SnS Thin Films Fabricated by High Temperature Sulfurization

Structural and electrical properties of sns thin films via chemical bath deposition technique

Structural and electrical properties of sns thin films via chemical bath deposition technique

Properties of SnS thin films grown by physical vapour deposition

Thin films of tin sulfide (SnS) were prepared by thermal evaporation technique on glass substrates and on n-type Si substrate and their physical properties were studied. The phase of the obtained thin films before and after thermal treatment was confirmed by X-ray diffraction analysis and Raman spectra. Optical transmission and reflection spectra were measured in the wavelength range 300-1800 nm, and the data were used to determine the direct and indirect optical band gaps. Four-point measurements have revealed that SnS thin film exhibits p-type conduction. Current-voltage characteristics of the SnS/ n-Si structures demonstrate strong photosensitivity and photovoltaic effect. However, in order to be able to evaluate the potential applicability of this heterojunction for photovoltaic or electronic devices, further study and technological optimization has to be conducted.

Influence of substrate material on the microstructure and optical properties of hot wall deposited SnS thin films

Tin monosulfide SnS raises an interest as a promising material for photovoltaics. The influence of the substrate material on the microstructure and optical properties of SnS thin films with [111] texture obtained by hot wall vacuum deposition on glass, molybdenum and indium tin oxide substrates is reported. The lattice parameters for layers grown on different substrates were determined by X-ray diffraction and their deviations from the data reported in the literature for single α-SnS crystals were discussed. The change in the degree of preferred orientation of the films depending on the substrate material is observed. The direct nature of the optical transitions with the optical band gap of 1.15±0.01eV is reported.

Influence of thermal treatment on the microstructure and electrical and optical properties of SnS thin films

The influence of thermal treatment on the microstructure and electrical and optical properties of SnS films obtained by the “hot-wall” method has been investigated. It has been established that the thermal treatment does not lead to the formation of foreign phases in the film composition. The average film roughness after the thermal treatment increases from 10 to 20 nm. Resistivity after the thermal treatment decreases from 230 to 100 Ωcm (T = 300 K), while the temperature coefficient of thermopower increases from 40 to 330 μV K−1. The band gap is 1.46 eV. The adsorption edge is not displaced after the thermal treatment.

Structural and Optical Properties of SnS Thin Films

Thin films of tin sulfide (SnS) were prepared by thermal evaporation technique on glass substrates, with thickness in the range of 100, 200 and 300nm and their physical properties were studied with appropriate techniques. The phase of the synthesized thin films was confirmed by X-ray diffraction analysis. Further, the crystallite size was calculated by Scherer formula and found to increase from 58 to 79 nm with increase of thickness. The obtained results were discussed in view of testing the suitability of SnS film as an absorber for the fabrication of low-cost and non toxic solar cell. For thickness, t=300nm, the films showed orthorhombic OR phase with a strong (111) preferred orientation. The films deposited with thickness < 200nm deviated from stoichiometry and additional phases such as Sn2S3 was found to be present. Optical transmission spectra we rerecorded in the wavelength range 200-1100 nm, and the data was used to calculate absorption coefficient and optical band gap. SnS film grown with 300nm has shown a direct optical band gap of ~1.7 eV, with an absorption coefficient of 105cm-1 above the fundamental absorption edge. These polycrystalline and highly absorbing SnS thin films are suitable for the fabrication of hetero junction solar cells.

Fabrications of SnS thin films and SnS-based heterojunctions on flexible polyimide substrates

The flexible polyimide substrates were utilized to realize the flexibility of SnS thin films and SnS-based heterojunctions. The SnS thin films and ZnO/SnS heterojunctions were deposited on polyimide substrates by magnetron sputtering. The properties of SnS thin films and ZnO/SnS heterojunctions were studied. The experimental results show that the post annealing can enhance the degree of crystallinity of flexible SnS thin films. The annealed SnS thin films present polycrystalline structure with preferential orientation along the (040) plane and grain size of 18 nm. The compositions of as-deposited and annealed flexible SnS thin films are close to the stoichiometry of SnS. The direct band gaps are 1.48 and 1.32 eV for the as-deposited and annealed SnS thin films, respectively. The fabricated flexible ZnO/SnS heterojunctions show rectifying properties with the rectifying ratio of 6.85 and the diode ideal factor of 1.23. The experimental results indicate the feasibility of using polyimide as the substrates of SnS thin films and SnS-based heterojunctions.

Effect of indium incorporation on properties of SnS thin films prepared by spray pyrolysis

Tin sulphide (SnS) thin films were deposited on glass substrate at different substrate temperature (Ts=325°C, 350°C and 375°C) by pyrolytic decomposition using stannous chloride and thiourea as precursor solutions. Also, indium-doped SnS thin films were prepared by using InCl3 as dopant source. The dopant concentration [In/Sn] was varied from 2at% to 6at%. The XRD analysis revealed that the films were polycrystalline in nature having orthorhombic crystal structure with a preferred grain orientation along (111) plane. Due to In doping, the orientation of the grains in the (111) plane was found to be deteriorated. Atomic force microscopy (AFM) measurements revealed that the surface roughness of the films decreased due to indium doping. The optical properties were investigated by measuring the transmittance characteristics which were used to find the optical band gap energy, refractive index and extinction coefficient. The energy band gap value was decreased from 1.60 to 1.43eV with increasing In concentration. The photoluminescence (PL) measurements of thin films showed strong emission band centered at 760nm. Using Hall Effect measurements electrical resistivity, carrier concentration and Hall mobility have been determined.

Effect of rapid thermal annealing on the microstructural and optical properties of electrodeposited SnS thin films

We deposited SnS thin films on indium-tin-oxide (ITO) coated glass substrates using electrochemical deposition. The effect of rapid thermal annealing (RTA) on the microstructural evolution and optical properties of SnS thin films was investigated. The as-deposited films were composed of orthorhombic SnS and γ-Sn2S3. With an increase in the RTA temperature, the γ-Sn2S3 phase disappeared and the uniformity of the SnS films improved. The optical band gap of the as-deposited films was 1.44 eV. Increasing the RTA temperature to 200°C led to an increase in the optical band gap to 1.7 eV. These phenomena might be due to the compositional variations in the SnS films and to the formation of the SnO2 oxide caused by post-growth thermal annealing.

Effect of Annealing Temperature and Time on the Optical Properties of SnS Thin Films Prepared by Chemical Bath Deposition

A research on the deposition and Characterization of SnS Thin Films by Chemical Bath Deposition Technique using Ammonia (NH3) as a complexing agent. Thin film of Tin (II) sulphide (SnS) is deposited onto glass substrates using chemical bath deposition (CBD) at room temperature for 3hours and 1hour. The optical properties of the film were measured using Double Beam UV- Spectrophotometer with serial number UV061514, Energy dispersive X-ray florescence (EDXRF) determines the compositions together with Rutherford Back Scattering (RBS) analysis revealed that thin films have percentage compositions of the elements (Sn/S, 50.1/49.9 for 3hours and Sn/S, 50.4/49.6 for 1hour) and their thicknesses are 100nm for 3hours and 150nm for 1hour. It was found that SnS thin film exhibits p-type conduction. Optical band gap values of direct and indirect transitions are estimated to be 1.98eV to 2.01eV and 1.82eV to 1.98eV for the two samples respectively. The other optical properties calculated from transmittance using appropriate equations are absorbance, reflectance, band gap , absorption coefficient, optical conductivity, refractive index and extinction coefficient.

Effect of Sb dopant on the structural, optical and electrical properties of SnS thin films by spray pyrolysis technique

Thin films of antimony doped tin sulphide (SnS:Sb) with different antimony concentrations have been prepared by the spray pyrolysis technique at the substrate temperature of 350°C. The physical properties of the films were studied as a function of increase in antimony dopant concentration (up to 10at.%). The films were characterized by different techniques to study their structural, optical and electrical properties. The X-ray diffraction analysis revealed that the films were polycrystalline in nature and having orthorhombic crystal structure with a preferred orientation in (111) direction. Due to Sb doping, the crystalline quality and the preferential orientation of SnS films were improved up to 6at.% of doping concentration. However, when doping concentration was increased above 6at.%, the crystalline quality and the preferential orientation of SnS films was deteriorated. Atomic force microscopy images revealed that the surface roughness of the films increased due to Sb doping. Optical measurements showed that the band gap values decreased from 1.60eV to 1.15eV with increase in Sb concentration. The photoluminescence spectra displayed that all the samples have an emission peak centered at 760nm. At 6at.% of Sb doping, the film has the lowest resistivity of 2.598×10−2Ωcm while the carrier concentration was high.

Optical Properties of Sputtered SnS Thin Films for Photovoltaic Absorbers

Tin monusulfide (SnS) is an absorber with promising optoelectronic properties and low environmental constraints of interest for high-efficiency solar cells. The optical properties of SnS thin films are investigated to assess their compatibility with the solar spectrum. SnS thin films were RF magnetron sputter-deposited at target powers of 105-155 W and total pressures of 5 to 60 mtorr in argon at room temperature. X-ray diffraction patterns confirmed a dominant tin monosulfide herzenbergite phase. The absorption coefficient was determined by spectroscopic ellipsometry and unpolarized spectrophotometry measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> -10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> . The direct gap, indirect gap, and forbidden direct gap for the films were found to be in the range of 1.2-1.6 eV, indicating a strong match with the solar irradiance spectrum.