Abstract
We deposited SnS thin films on indium-tin-oxide (ITO) coated glass substrates using electrochemical deposition. The effect of rapid thermal annealing (RTA) on the microstructural evolution and optical properties of SnS thin films was investigated. The as-deposited films were composed of orthorhombic SnS and γ-Sn2S3. With an increase in the RTA temperature, the γ-Sn2S3 phase disappeared and the uniformity of the SnS films improved. The optical band gap of the as-deposited films was 1.44 eV. Increasing the RTA temperature to 200°C led to an increase in the optical band gap to 1.7 eV. These phenomena might be due to the compositional variations in the SnS films and to the formation of the SnO2 oxide caused by post-growth thermal annealing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
