Abstract
SnS thin films were grown by pulsed laser deposition on glass substrates at room temperature,and then the deposited films were rapidly annealed at 200,300,400,500,600 ℃ under flowing argon atmosphere. The effects of rapid thermal annealing( RTA) temperature on the microstructural,morphological,optical properties and electrical properties of Sn S thin films were studied by X-ray diffraction( XRD),laser Raman spectrometry( Raman),atomic force microscopy( AFM),field emission scanning electron microscopy( FESEM),ultraviolet-visible-near infrared spectrophotometer( UV-Vis-NIR) and Keithley 4200-SCS semiconductor parameter analyzer. The results show that SnS thin films grow preferentially oriented in the( 111) direction,and the crystalline quality of SnS thin films is the best at 400 ℃. Raman characteristic peaks of Sn S appear in Raman spectra of the thin films. While the increasing of the annealing temperature,the thickness of the films gradually decrease whereas the average particle sizes of the films increase. The absorption coefficient in the visible region is in the order of 105cm- 1at different thermal annealing temperature. The direct bandgap of the film is 1. 92 e V at 400 ℃. With the increasing of the thermal annealing temperature from 300 to 500 ℃,the resistivity of the films decreases from 1. 85 × 104 to 14. 97 Ω·cm.
Published Version
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