Effect of Sb dopant on the structural, optical and electrical properties of SnS thin films by spray pyrolysis technique

Abstract

Thin films of antimony doped tin sulphide (SnS:Sb) with different antimony concentrations have been prepared by the spray pyrolysis technique at the substrate temperature of 350°C. The physical properties of the films were studied as a function of increase in antimony dopant concentration (up to 10at.%). The films were characterized by different techniques to study their structural, optical and electrical properties. The X-ray diffraction analysis revealed that the films were polycrystalline in nature and having orthorhombic crystal structure with a preferred orientation in (111) direction. Due to Sb doping, the crystalline quality and the preferential orientation of SnS films were improved up to 6at.% of doping concentration. However, when doping concentration was increased above 6at.%, the crystalline quality and the preferential orientation of SnS films was deteriorated. Atomic force microscopy images revealed that the surface roughness of the films increased due to Sb doping. Optical measurements showed that the band gap values decreased from 1.60eV to 1.15eV with increase in Sb concentration. The photoluminescence spectra displayed that all the samples have an emission peak centered at 760nm. At 6at.% of Sb doping, the film has the lowest resistivity of 2.598×10−2Ωcm while the carrier concentration was high.