Properties Of Films Research Articles

Exploring Negative Ion Behaviors and Their Influence on the Properties of DC Magnetron Sputtered ITO Films under Varied Power and Pressure Conditions

Abstract In this study, ITO films were deposited on silicon and quartz substrates by magnetron sputtering technology in pure argon. Using EQP plasma diagnostic technology, we study the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incident on the substrate surface, with special attention to the production of high-energy negative oxygen ions, and elucidate the mechanism behind its production. At the same time, the structure and properties of ITO films were systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films. Combined with the kinetic property analysis of sputtering damage mechanism of transparent conductive oxide (TCO) thin films, it provides valuable physical understanding for the optimization of TCO thin film deposition process.

Electrochemical Properties of Mo4VC4Tx MXene in Aqueous Electrolytes.

M5C4Tx MXenes represent the most recently discovered and least studied subfamily of out-of-plane ordered double transition metal carbides with 11 atomic layers, probably the thickest of all 2D materials. Molybdenum (Mo) and vanadium (V) in Mo4VC4Tx offer multiple oxidation states, making this MXene potentially attractive for electrochemical energy storage applications. Herein, we evaluated the electrochemical properties of Mo4VC4Tx free-standing thin films in acidic, basic, and neutral aqueous electrolytes and observed the highest gravimetric capacitance of 219 F g-1 at 2 mV s-1 in a 3 M H2SO4. Further, we investigated the intercalation states of four different cations (H+, Li+, Na+, and K+) in MXenes through ab initio molecular dynamics (AIMD) simulation and used density functional theory (DFT) calculations to assess the charge storage mechanisms in different electrolytes. These studies show hydrated Li+, Na+, and K+ ions forming an electric double layer (EDL) at the MXene surface as the primary charge storage mechanism. This work shows the promise of Mo4VC4Tx MXene for energy storage in aqueous electrolytes.

Impact of H-Related Chemical Bonds on Physical Properties of SiNx:H Films Deposited via Plasma-Enhanced Chemical Vapor Deposition

SiNx:H film deposition via plasma-enhanced chemical vapor deposition has been widely used in semiconductor devices. However, the relationship between the chemical bonds and the physical and chemical properties has rarely been studied for films deposited using tools in terms of the actual volume production. In this study, we investigated the effects of the deposition conditions on the H-related chemical bonding, physical and chemical properties, yield, and quality of SiNx:H films used as passivation layers at the 28 nm technology node. The radiofrequency (RF) power, electrode plate spacing, temperature, chamber pressure, and SiH4:NH3 gas flow ratio were selected as the deposition parameters. The results show a clear relationship between the H-related chemical bonds and the examined film properties. The difference in the refractive index (RI) and breakdown field (EB) of the SiNx:H films is mainly attributed to the change in the Si–H:N–H ratio. As the Si–H:N–H ratio increased, the RI and EB showed linear growth and exponential downward trends, respectively. In addition, compared with the Si–H:N–H ratio, the total Si–H and N–H contents had a greater impact on the wet etching rates of the SiNx:H films, but the stress was not entirely dependent on the total Si–H and N–H contents. Notably, excessive electrode plate spacing can lead to a significant undesired increase in the non-uniformity and surface roughness of SiNx:H films. This study provides industry-level processing guidance for the development of advanced silicon nitride film deposition technology.

Effect of substrate temperature and position on properties of Cu3N thin films deposited by reactive radio frequency magnetron sputtering

Copper nitride (Cu3N) thin films were deposited on soda lime glass (SLG) substrates by reactive radio frequency (RF) magnetron sputtering using a pure Cu target in the presence of argon and nitrogen. The structural, optical, and electrical properties of the Cu3N films were investigated systematically on substrate temperature and position, demonstrating that both parameters strongly influence the properties of Cu3N thin films. XRD patterns revealed the formation of the Cu3N phase at all substrate temperatures and positions. The transmittance of the Cu3N thin films was over 80 % in the transparent region and the band gap for Cu3N was determined to 1.7–1.9 eV with a very high absorption coefficient above 104 cm−1. The n-type conductivity was observed in every Cu3N film but the resistivity varied considerably with both substrate temperature and position. The promising physical properties of Cu3N thin films suggest their potential application in optoelectronic devices such as thin film solar cells.

Fabrication and characterization of bacterial cellulose/carbon nanotube composite conductive film and its impact on the luminance of flexible electroluminescent devices as the bottom electrode

Flexible conductive films (BC/CNTs) were fabricated via a straightforward vacuum filtration method using bacterial cellulose (BC) as the substrate and single-walled carbon nanotubes (SWCNTs) as the conductive filler. The resulting BC/CNTs composite films were characterized for the morphology, structure, thermal properties and electrical conductivity using scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), thermogravimetric analysis (TG) and X-ray photoelectron spectroscopy (XPS). The study revealed that, the addition of SWCNTs significantly improved the mechanical properties of films. Among the BC/CNTs composite films, the one with the SWCNTs concentration of 0.36 wt% exhibited the best mechanical properties. Incorporating SWCNTs also enhanced the thermal stability and improved electrical conductivity of the composite films. Notably, higher SWCNTs concentrations led to better thermal stability and lower electrical resistance. Ultimately, these BC/CNTs composite films were successfully employed in flexible electroluminescent devices, demonstrating good luminescence.

Measurement of the depth-dependent local dynamics in thin polymer films through rejuvenation of ultrastable glasses

The depth dependence of structural relaxation dynamics is a key part of understanding thin glassy films. Despite this importance and decades of research, a method to provide this information has proved elusive. We measure the isothermal rejuvenation of stable glass films of poly(styrene), and demonstrate that the propagation of the front responsible for the transformation to a supercooled-liquid state serves as a highly localized probe of the local dynamics of the supercooled liquid. We use this connection to probe the depth-dependent relaxation rate with nanometric precision for a series of polystyrene films over a range of temperatures near the bulk glass transition temperature. The analysis shows the spatial extent of enhanced surface mobility and reveals the existence of an unexpected large dynamical length scale in the system. The results are compared with the cooperative-string model for glassy dynamics. The data reveals that the film-thickness dependence of whole film properties arises mainly from the volume fraction of the near-surface region. While the dynamics farthest from the free surface shows the expected bulk-like temperature dependence, the dynamics in the near-surface region shows very little dependence on temperature. This technique can be used in a broad range of thin film materials to gain previously unattainable information about localized structural relaxation.

Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications

Silicon carbide (SiC) is a rapidly emerging material for photonic applications, thanks to its exceptional optical properties. To be used as a waveguide, SiC thin films must be deposited directly on silica at low temperature. Amorphous SiC films were deposited by RF magnetron sputtering using a single source of high-purity polycrystalline SiC. A systematic study of the chemical, structural and optical properties of the films was carried out, using a combination of XRD, XPS, SIMS, spectroscopic ellipsometry, Raman spectroscopy and UV–Vis absorption spectroscopy. The aim was to link deposition conditions to film properties. By exploring a three-parameter space (RF power, substrate temperature, pressure), we have demonstrated that RF power is the main parameter which controls the entire deposition process and film properties. By simply adjusting the RF plasma power between 150 and 450 W, it is possible to adjust the refractive index at a wavelength of 1.5 μm in the range 2.50–2.75 and vary the bandgap from 2.5 to 1.7 eV. This is attributed to a slight variation in film composition, particularly in terms of Si/C ratio and C–C bond concentration.

Effects of Rapid Heat Treatments on the Properties of Cu2O Thin Films Deposited at Room Temperature Using an Ammonia-Free SILAR Technique

We report herein the analysis of the properties of copper(I) oxide thin films deposited by an optimized ammonium-free successive ion layer adsorption and reaction (SILAR) technique. The Cu2O thin film deposition process was carried out at room temperature using copper acetate monohydrate, sodium citrate as complexing agent, and hydrogen peroxide as precursors of copper and oxygen ions, respectively. The harmless and easy-to-handle sodium citrate replaces the volatile NH4OH commonly employed as complexing agent in the SILAR technique for the deposition of metal oxide thin films. The optical, structural, morphological, and electrical properties of the as-deposited Cu2O thin films were studied as a function of the number of cycles during deposition, as well as their modifications produced by the effect of rapid thermal annealing (RTA) in vacuum in a temperature range of 200–250°C for 1 min, 3 min, and 5 min. The as-deposited thin films had cubic crystalline structure corresponding to the Cu2O phase as determined by x-ray diffraction (XRD), with a direct energy bandgap of 2.43–2.51 eV depending on the number of cycles, and electrical resistivity of the order of 103 Ω cm. The XRD and x-ray photoelectron spectroscopy (XPS) analysis of the Cu2O thin films treated by RTA demonstrated an increase of the crystal size with time and temperature of the RTA and reduction effects from Cu2+ to Cu1+ oxidation states. On the other hand, the RTA treatments also decreased their energy bandgap to 2.38 eV and electrical resistivity to 102 Ω cm. The high energy bandgap values of the Cu2O thin films were attributed to quantum confinement effects produced by their small crystal size in the range of 3.6–8.6 nm.Graphical

Tunning the hydrophobic performance and thermal stability of pectin film by acetic anhydride esterification

Pectin, a polysaccharide found in plant cell walls, is characterized by a high abundance of hydroxyl groups and carboxylic acid groups, which results in a strong affinity for water and limits its suitability as a film material. This study aimed to modulate the esterification degree of PEC films by adjusting the concentration of acetic anhydride, and assess the impact of acetic anhydride esterification modification on the properties of the resultant PEC films. The results demonstrated successful grafting of acetic anhydride onto the galacturonic acid ring in the PEC molecule through the esterification process. The hydrophobicity, thermal stability, barrier properties, and mechanical properties of the esterified PEC films were investigated. Among the various concentrations tested, the E-PEC-0.25 film exhibited the highest contact angle of 103.46° and tensile strength of 33.44 MPa, showcasing optimal performance. The E-PEC-0.1 film achieved the highest esterification degree of 0.94 and elongation at a break of 21.11 %. It also exhibited the transparency of 11.66 and the lowest water vapor transmission rate of 0.56 g·mm/(m2·h·kpa). Additionally, TGA and DSC tests revealed enhanced thermal stability of the esterification-prepared films. These findings highlight the potential of acetic anhydride tuning as a promising strategy for optimizing pectin film production.

Investigating the physicochemical, antimicrobial and antioxidant properties of chitosan film containing zero-valent iron nanoparticles and oregano essence.

The problems caused by the pollution of the environment by petroleum polymers in recent years have caused researchers to think of replacing petroleum polymers with biodegradable and natural polymers. The aim of this research was to produce composite film of chitosan (Chit)/zero-valent iron (Fe) nanoparticles/oregano essence (Ess) (Chit/Fe/Ess). Central composite design was used to study physical, morphological, antioxidant and antimicrobial properties of films. The results showed that with the increase of iron nanoparticles and oregano essence, the thickness of the film increased. The moisture, solubility and water vapor permeability of the film decreased with the increase of iron nanoparticles and oregano essence. The results of the mechanical test showed that with the increase of iron nanoparticles and oregano essence, the tensile strength and elongation at break point decreased. Iron nanoparticles and oregano essence increased significantly the antioxidant activity of the film. The results of the antimicrobial activity of the prepared films show that the addition of iron nanoparticles and oregano essence enhanced the antimicrobial activity of the film against Escherichia coli and Staphylococcus aureus. X-ray diffraction analysis showed that iron nanoparticles were physically combined with chitosan polymer. Fourier transform infrared (FTIR) results confirmed the physical presence of iron nanoparticles and oregano essence in the polymer matrix. The results of scanning electron microscopy (SEM) showed that the surface of nanocomposite films is more heterogeneous than chitosan. Iron nanoparticles and oregano essence could delay the thermal decomposition of chitosan and increase the thermal stability of chitosan film.

Enhancement of electrical and photo-electrical properties of P3HT:CrCl2 thin films for photo sensing applications

In this work, doped and undoped P3HT thin films are prepared and deposited onto ITO interdigitated electrodes. To improve the optical and the electrical properties of the pure P3HT thin film, chromium(II) chloride was used as dopant material with three different weight percentage, 2.5%, 5%, 10%. Room-temperature current–voltage (I-V) characteristics of the samples were measured, showing an increase in the electrical current with increasing the dopant concentration. Under dark condition, the conductivity and resistivity of the pure P3HT thin films were enhanced by a factor of 5× as a result of doping the P3HT by 10 wt% of CrCl2. Under light intensity (50 mW cm−2) and at 10 V bias, the conductivity and resistivity obtained from P3HT:CrCl2 (10 wt%) thin films are 4.75 × 10−4 S cm−1 and ∼2 kΩ, respectively. These results exhibit an enhancement by a factor of ∼12× compared to those obtained from pure P3HT thin film. The current of the photo-sensors based on doped/undoped P3HT thin films are measured as a function of time under light intensity ranging from 0 to 50 mW cm−2 at 1 V bias, exhibiting high photo-response and good reproducibility. Three different wavelengths, white, green, and red were used as light sources to expose the photo-sensors. Under white light, photo-sensor based on P3HT:CrCl2(10 wt%) exhibit the highest values of the photo-responsivity and quantum efficiency, ∼23.3 mA W−1 and 5.8%, respectively, showing an enhancement by a factor of ∼ 11.5× compared to those obtained from the photo-sensor based on pure P3HT.

Conversion of preferred crystalline orientation by annealing and its impacts on the structural, electronic, and optical properties of pulsed laser-deposited CdO thin films

The impact of annealing on the preferred crystalline orientation as well as the structural, electronic, and optical properties of pulsed laser-deposited 150 ± 3 nm thick cadmium oxide (CdO) films was studied. X-ray diffraction analysis revealed that the annealed CdO films have smaller crystallite sizes, as their molecules at the grain boundaries possessed enough kinetic energy to rearrange their preferred crystalline orientation between (111) and (200). The atomic force microscopy and field emission scanning electron microscopy analyses revealed an enhancement in the active surface area with optimized grain boundaries by annealing which facilitates gas adsorption/desorption. DC electrical conductivity depends on the annealing process and reveals two different conduction mechanisms. The direct optical energy gap was decreased from 3.41 eV to 2.76 eV by annealing at 473 K which is greater than the theoretical value, i.e. 2.2 eV, for bulk CdO. The findings agree with the Burstein-Moss effect as a result of the increased carrier concentration following the generation of numerous oxygen vacancy sites and Cd interstitials. However, mutual charge carrier-impurity interaction and charge carrier Columb interaction contributed to narrowing the band gap by increasing the annealing temperature. The enhanced values of Urbach energy, optical packing density, dispersion parameters, optical conductivity, dissipation factor, oscillator strength, and lattice dielectric constant supported the effectiveness of the annealing process on tailoring optoelectronic responses in the infrared region for the CdO thin films for use in optoelectronic devices. Moreover, the calculated linear optical susceptibility, and nonlinear constants (i.e. third-order optical susceptibility and nonlinear refractive index) were the highest for CdO films annealed at 473 K. The improved value of the figure of merit, solar material protection factor, and solar skin protection factor for the CdO films, annealed at 473 K supports its use in several photovoltaic applications, including solar cells.

Probing electronic and dielectric properties of ultrathin Ga2O3/Al2O3 atomic layer stacks made with in vacuo atomic layer deposition

Ultrathin (1–4 nm) films of wide-bandgap semiconductors are important to many applications in microelectronics, and the film properties can be sensitively affected by defects especially at the substrate/film interface. Motivated by this, an in vacuo atomic layer deposition (ALD) was developed for the synthesis of ultrathin films of Ga2O3/Al2O3 atomic layer stacks (ALSs) on Al electrodes. It is found that the Ga2O3/Al2O3 ALS can form an interface with the Al electrode with negligible interfacial defects under the optimal ALD condition whether the starting atomic layer is Ga2O3 or Al2O3. Such an interface is the key to achieving an optimal and tunable electronic structure and dielectric properties in Ga2O3/Al2O3 ALS ultrathin films. In situ scanning tunneling spectroscopy confirms that the electronic structure of Ga2O3/Al2O3 ALS can have tunable bandgaps (Eg) between ∼2.0 eV for 100% Ga2O3 and ∼3.4 eV for 100% Al2O3. With variable ratios of Ga:Al, the measured Eg exhibits significant non-linearity, agreeing with the density functional theory simulation, and tunable carrier concentration. Furthermore, the dielectric constant ε of ultrathin Ga2O3/Al2O3 ALS capacitors is tunable through the variation in the ratio of the constituent Ga2O3 and Al2O3 atomic layer numbers from 9.83 for 100% Ga2O3 to 8.28 for 100% Al2O3. The high ɛ leads to excellent effective oxide thickness ∼1.7–2.1 nm for the ultrathin Ga2O3/Al2O3 ALS, which is comparable to that of high-K dielectric materials.

Active films based on bio-polyethylene and natural extracts rich in tocopherols for food packaging applications

Antioxidant/antifungal active films based on bio-polyethylene (BPE) added with Nutrabiol®T90 and Tocobiol®Plus natural extracts rich in tocopherols at different concentrations (1 and 3 wt%) were developed by melt-blending followed by compression-molding. Thermal, barrier, mechanical, optical and functional properties of the developed active films were evaluated. The addition of active extracts did not cause important changes in thermal and barrier properties of active films whereas a significant increase in oxidative stability was found. Release kinetics of active additives migration showed higher tocopherol diffusion coefficient and antioxidant capacity, determined by the DPPH and ABTS methods, for films containing 3 wt% of Nutrabiol®T90. This film also delayed polymer oxidation in 260 min and extended strawberries shelf-life during storage for 7 days compared to neat BPE, showing a significant antifungal effect. The studied biomaterials offer great potential to substitute conventional petrol-derived materials at the industrial scale as active food packaging systems to increase the shelf-life of perishable foodstuff.

Enhancement of gasochromic response to hydrogen of WO3 thin films by post-process modification and catalyst selection

The gasochromic properties of WO3 thin films deposited by electron beam evaporation were investigated, focusing on their structural, morphology and optical changes caused by heat treatment. Moreover, the influence of the thickness and type of catalyst on the gasochromic properties of WO3 was examined. X-ray diffraction measurements revealed that WO3 thin films annealed up to 473 K remained amorphous, whereas annealing at 673 K and above, initiated crystallization into a monoclinic structure. Gasochromic behaviour was observed in response to hydrogen exposure, with the most significant changes occurring in films annealed at 673 K with a thin adlayer of palladium catalyst. A gasochromic response of 1.84 was achieved for H2 concentration as low as 25 ppm. The process of gasochromic colouration was correlated with the changes of free charge carrier concentration calculated based on Drude free electron theory. XPS analysis confirms WO3 reduction under hydrogen exposure, validating proposed colouration mechanisms. These comprehensive findings offer insights into optimizing gasochromic thin films for various sensing applications.

Instrumented indentation of PMMA/ZnO nanocomposites films

Piezoelectric nanocomposite films comprise zinc oxide (ZnO) nanoparticles as reinforcement and poly-methyl methacrylate (PMMA) as the matrix. These films can potentially be used as structural and functional components of microdevices that can harvest energy from ambient mechanical vibrations. The design of such energy-scavenging micro/nano-systems will require knowledge of the process-microstructure-property relationships of nanocomposite films. This study synthesized PMMA/ZnO nanocomposite films using ultrasonic probe sonication and solution-casting. The nanomechanical characterization of the nanocomposite films was conducted using a nanoindenter via quasi-static mode. Quasi-static nanoindentation revealed that the indentation modulus ranged from 3.49 ± 0.03 GPa for PMMA to 4.71 ± 0.07 GPa for PMMA/ZnO 5 wt% nanocomposite film. However, the indentation modulus of 10 wt% ZnO nanocomposites decreases, i.e. 4.22 ± 0.60 GPa. The indentation hardness varied from 311.97 ± 6 MPa for PMMA thermoplastic polymer to 432.94 ± 83.81 MPa for PMMA/ZnO 10 wt% nanocomposites film. In addition, the properties of the nanocomposite film vary, as supported by scanning electron micrographs.

Tunable charge transport properties in non-stoichiometric SrIrO3 thin films.

Delving into the intricate interplay between spin-orbit coupling and Coulomb correlations in strongly correlated oxides, particularly perovskite compounds, has unveiled a rich landscape of exotic phenomena ranging from unconventional superconductivity to the emergence of topological phases. In this study, we have employed pulsed laser deposition (PLD) technique to grow SrIrO3 (SIO) thin films on SrTiO3 substrates, systematically varying the oxygen content during the post-deposition annealing. X-ray Photoelectron Spectroscopy (XPS) provided insights into the stoichiometry and spin-orbit splitting energy of Iridium within the SIO film, while high-resolution X-ray studies meticulously examined the structural integrity of the thin films. Remarkably, our findings indicate a decrease in the metallicity of SIO thin films with reduced annealing O2 partial pressure. Furthermore, we carried out magneto-transport studies on the SIO thin films, the results revealed intriguing insights into spin transport as a function of oxygen content. The tunability of the electronic band structure of SrIrO3 films with varying oxygen vacancy is correlated with the DFT calculations. Our findings elucidate the intricate mechanisms dictating spin transport properties in SrIrO3 thin films, offering invaluable guidance for the design and optimization of spintronic devices based on complex oxide materials. Notably, the ability to tune bandwidth by varying post-annealing oxygen partial pressure in iridate-based spintronic materials holds significant promise for advancing technological applications in the spintronics domain.&#xD.

Morphological Characterization of Sb-Doped SnO2 Thin Films Developed by Spray Pyrolysis

In the present work, we have successfully deposited Sb antimony doped tin dioxide (SnO2) thin films with different concentrations (0 at%, 1 at%, 3 at% and 5 at%) from a stannous (II) chloride dihydrate solution (SnCl2.2H2O), by the pyrolysis chemical spray deposition technique on ordinary microscope glass substrates preheated to a fixed temperature of 350 °C. After deposition, the films were annealed at temperatures 400 °C for 4h. The aim of this work is on the one hand to study the morphological properties of pure and doped tin dioxide thin films and to determine the different morphological parameters such as: the roughness Ra, Rq and on the other hand to study the effect of Sb doping on the morphological properties of SnO2 thin films. To achieve this purpose, the thickness of all the films was estimated by profilometer with standard scan type. The morphology of the films was examined by atomic force microscope (AFM) in contact mode at room temperature to visualize the surface of our samples (the structure, size and morphology of crystallites ... etc). The 2D and 3D AFM images confirm the formation of nanostructures on the surface, with shapes and dimensions influenced by the amount of antimony doping. All the samples show a polycrystalline morphology, and the grain size progressively decreases with the increase of the Sb concentration (1% and 3%). On the other hand, for high antimony doping (5% Sb) the grains are larger than those observed at 3% doping. The root mean square (RMS) surface roughness values for samples with Sb concentrations (5%) were found to be 8.334 nm.

Physical properties of InxSey and CuInSe2 thin films with potential application in radiation detectors

Abstract A study of InxSey and CuInSe2 thin films processed by the thermal co-evaporation technique by evaluating its physical properties is carried out. Both InxSey as well as CuInSe2 thin films were synthesized by multi-source thermal co-evaporation technique, using Knudsen-type effusion cells. The optical, structural, electrical, and morphological properties of each film were analyzed in order to determine the feasibility at the formation of a p-CuInSe2/n-InxSey heterojunction. InxSey films exhibited bandgap values in the range of 2.4 - 2.7 eV which was determined by UV-Vis spectroscopic analysis. Vibrational modes associated to In2Se3 as well as Se are presented in the InxSey films according to Raman studies. The irregular morphology of the grains on the InxSey surface, with an average size of 380 nm are related to both In2Se3 and Se materials according to Raman spectroscopy and Scanning Electron Microscopy analysis. The InxSey thin films showed resistivity vales around 10-3 Ω∙cm. The Hackee´s Figure of Merit (FOMH) analysis supported the physical assumption that InxSey thin films are feasible to be used as window layer in a photovoltaic device because of the high values of FOMH obtained for samples processed at 300 °C. On the other hand, an influence on the morphology of the CuInSe2 films was observed when the films were synthetized at different substrate temperature. Uniform CuInSe2 films with agglomerated cauliflower-like grains with an average size of 1.8 μm were observed by SEM. The presence of binary phases within the CuInSe2 compound were detected through Raman and X-Ray characterization. Average crystallite size of 61 nm and microstrain around 2.5 x10-3 were estimated for the CuInSe2 films through X-Ray analysis. According to the physical properties analyzed the InxSey/CuInSe2 semiconductor bilayer can be a suitable candidate for application in photovoltaic devices as well as charged particle detector.

Impact of oxygen vacancy on luminescence properties of dysprosium-doped zinc oxide thin films

Pristine and dysprosium-doped ZnO thin films, highly c-axis oriented, were grown on a c-Al2O3 substrate using the pulsed laser deposition technique. During the deposition process, the growth was impacted by changes in the oxygen partial pressure. The structural, optical, and compositional properties of the pristine and dysprosium-doped ZnO thin films were systematically characterized using various state-of-the-art experimental techniques. The crystallinity associated with these films was observed to be highly dependent on the oxygen partial pressure maintained during the growth process. An average optical transparency of more than ∼90% in the visible spectral range (i.e., 400–800 nm) was observed for all specimens. For doped specimens, expected intra-4fn emissions of (dysprosium) Dy3+ ions that emanated from the 4F9/2 energy state were observed in room-temperature photoluminescence spectra under direct excitation. The Jacobian-transformed wavelength-to-energy plot for Dy-doped ZnO thin films in the UV-Visible region revealed intriguing findings. Specifically, it depicted a prominent peak at 2.82 eV, indicative of the energy state of Dy3+ ions, alongside intense band-edge emission and various defect-related emissions. The intensity of these transitions was observed to depend on the oxygen partial pressure kept during deposition. An x-ray photoelectron spectroscopy analysis of the doped specimen confirmed the +3 oxidation state of dysprosium into the ZnO matrix. These results provide a promising approach for controlling the doping and growth strategy of Dy-doped ZnO thin films, thereby opening up a wide range of applications and enhancement for next-generation optoelectronic devices.