This work aims to provide information about the deposition of gold via bipolar high-power impulse magnetron sputtering (HIPIMS) in order to identify suitable process parameters. The influences of voltage, pulse length and the kick-pulse on an argon–gold plasma during a bipolar high-power impulse magnetron sputtering deposition process were analysed via optical emission spectroscopy (OES) and oscilloscope. The voltage was varied between 700 V and 1000 V, the pulse length was varied between 20 µs and 100 µs and the process was observed once with kick-pulse and once without. The influence of the voltage on the plasma was more pronounced than the influence of the pulse width. While the intensity of several Au I lines increased up to 13-fold with increasing voltages, only a less-than linear increase in Au I brightness with time could be identified for changes in pulse length. The intensity of excited argon is only minimally affected by changes in voltages, but follows the evolution of the discharge current, with increasing pulse lengths. Contrary to the excited argon, the intensity emitted by ionized argon grows nearly linearly with voltage and pulse length. The reverse polarised pulse mainly affects the excited argon atoms in the plasma, while the influence on the ionized argon is less pronounced, as can be seen in the the spectra. Unlike the excited argon atoms, the excited gold atoms appear to be completely unaffected by the kick-pulse. No ionization of gold was observed. During the pulse, a strong rarefaction of plasma takes place. Very short pulses of less than 50 µs and high voltages of about 1000 V are to be preferred for the deposition of gold layers. This paper offers a comprehensive overview of the gold spectrum during a HIPIMS process and makes use of optical emission spectroscopy as a simple measuring approach for evaluation of the reverse polarized pulse during a bipolar process. Future uses of the process may include the metallization of polymers.