Driven by miniaturization in accordance with Moore's Law, memory devices like DRAM and NAND have achieved significant performance improvements. However, this relentless scaling has encountered fundamental physical limitations, hindering further miniaturization of traditional silicon (Si)-based transistors and restricting further performance gains. To confront this challenge, research is actively exploring new materials and architectures. Among these promising candidates, the Indium Gallium Zinc Oxide (IGZO) channel transistor has emerged as particularly attractive due to its advantages in low leakage current. Despite the advantages of IGZO for low-power consumption, achieving high field-effect mobility, crucial for fast operation speeds in memory devices, remains a significant challenge.To overcome this limitation, a novel machine learning (ML)-based approach is proposed for fabricating high-performance, ultra-thin IGZO thin-film transistors (TFTs) using sputtering process for the channel. This method optimizes the sputtering process, resulting in IGZO TFTs with outstanding multiple electrical properties simultaneously. The fabricated TFTs exhibit a high field-effect mobility of 33.2 cm²/V·s, a near-zero threshold voltage of -0.05 V, and a channel with a sub-10nm thickness. The performance of the fabricated TFTs is comparable to that of transistors produced by Atomic Layer Deposition (ALD), a technique renowned for its ability to create ultra-thin films with high quality. This achievement implies the potential of sputtering process to overcome the throughput challenges of ALD. Leveraging machine learning's strengths, the proposed method guides the optimization of the sputtering process, eliminating the need for traditional labor-intensive and trial-and-error methods. This approach has the potential to significantly accelerate the development of next-generation memory devices with unprecedented efficiency and speed.
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