Photothermal Theory Research Articles

Effect of Rotation in a Semiconductor Medium Under Photothermal Theory with Ramp Type Heating

Effect of Rotation in a Semiconductor Medium Under Photothermal Theory with Ramp Type Heating

Magnetic field and initial stress on a rotating photothermal semiconductor medium with ramp type heating and internal heat source

This manuscript addresses a significant research gap in the study by employing a mathematical model of photo thermoelastic wave propagation in a rotator semiconductor medium under the effect of a magnetic field and initial stress, as well as ramp-type heating. The considered model is formulated during the photothermal theory and in two-dimensional (2D) electronic-elastic deformation. The governing equations represent the interaction between the primary physical parameters throughout the process of photothermal transfer. Computational simulations are performed to determine the temperature, carrier density, displacement components, normal stress, and shear stress using the application of Lame’s potential and normal mode analysis. Numerical calculations are carried out and graphically displayed for an isotropic semiconductor like silicon (Si) material. Furthermore, comparisons are made with the previous results obtained by the others, as well as in the presence and absence of magnetic field, rotation, and initial stress. The obtained results illustrate that the rotation, initial stress, magnetic field, and ramp-type heating parameter all have significant effects. This investigation provides valuable insights into the synergistic dynamics among a magnetization constituent, semiconducture structures, and wave propagation, enabling advancements in nuclear reactors' construction, operation, electrical circuits, and solar cells.

A novel approach to analyzing the stability of physical fields in semiconductor materials under photothermal excitation

This work employs a new approach to study the stability heating effects caused by the thermal influence of photothermal theory. In addition, our investigation identified stability mechanisms occurring at the limits of the semiconductor (SC) medium. We have examined the interactions of photosensitive, thermic, and mechanical waves inside a medium's half-space using the theory of photo-thermoelectricity. The establishment of governing equations is achieved by utilizing one-dimensional elastic-optoelectronic deformation. Utilizing advanced mathematical techniques, such as Laplace transform with short-time approximations, we transform the foremost physical domains to the frequency domain, imposing conditions on the free surface of the elastic medium to enhance stability. Employing the homotopy perturbation method, the stability of the main physical quantities is obtained, with silicon as the chosen material. Graphical analyses and discussions elucidate the physical fields after applying the numerical Laplace inverse technique with the effect of some factors like the thermo-electric coupling parameter. Comparisons between some materials like silicon and germanium are being investigated. The stability of main physical quantities with various values of eigenvalues approaches are obtained with the dual solutions of the eigenvalues.

Photo-thermo-elastic interactions in micropolar generalized thermoelasticity theory in the framework of Green-Naghdi theory

The purpose of the current study is to establish a novel mathematical model in the micropolar theory of generalized thermoelasticity under the framework of photothermal theory. For the solution of the required problem, the integral transforms along with the potential displacement approach has been utilized. For graphical representation of different physical quantities such as displacement components, force and couple stress components, carrier density as well as the temperature distribution, Matlab software has been used.

A Novel Stochastic Model of the Photo-Thermoelasticity Theory of the Non-Local Excited Semiconductor Medium

A novel technique under the effect of stochastic heating due to the thermal effect of the photothermal theory is investigated. Realistically, stochastic processes are taken on the boundary of the non-local semiconductor medium. The interactions between optical, thermal, and mechanical waves in a half-space of the medium are studied according to the photo-thermoelasticity theory. The governing equations are described in one dimension (1D) according to the elastic-electronic deformation. Laplace transforms with short-time approximation are used to analyze the main physical fields in linearity form. To study the problem more realistically, some conditions are taken as random with white noise on the free surface of the elastic medium. The deterministic physical quantities are obtained with a stochastic calculus when a numerical inversion of the Laplace transform is applied. The silicon material is utilized to make the stochastic simulation. The comparisons are carried out between the distributions of deterministic and stochastic (statistically, the mean and variance) of the main physical quantities along different sample paths graphically and discussed for the non-local silicon semiconductor material.

Response of thermal-optical-elastic waves of a rotator microstretch semiconductor media during photothermal transport processes

A novel theoretical mathematical-physical model for elastic semiconductor material is investigated when the microstretch properties of the medium are considered. During the photo-generated processes, the generalized thermoelasticity theory in photo-thermal theory is studied for excited semiconductor medium. The governing equations describe the coupled propagation of the elastic-thermal-plasma (optical) waves when the thermomicrostretch elastic semiconductor material is considered during a rotation field. The photo-thermal transport processes occur during a two-dimension (2D) of elastic and electronic deformation when the microinertia of microelement is considered. The harmonic wave method can obtain the main solutions for the basic physical variables. The complete analytical solutions of the considered variables are obtained when some mechanical-thermal and plasma conditions are applied on the boundary of the semiconductor medium. The numerical simulations of silicon (Si) and Germanium (Ge) media are constructed graphically with many comparisons according to new parameters with thermal memories and rotation parameters.

Plasma-thermal-elastic waves of semiconductor induced by laser pulses with hydrostatic initial stress and the hyperbolic two-temperature theory

The hyperbolic two-temperature theory under the effect of initial stress is used to investigate the surface wave propagations on a semiconductor medium. The governing equations are taken under the impact of the photo-thermal theory during the photo-excitation transport processes under the initial stress. The semiconductor medium is affected on the outer surface by a pulsed laser. The main equations are studied when they are coupled between the photo-thermal theory and thermoelasticity theory in two-dimensional (2D) deformation. Some thermoelasticity models (Lord–Shulman (LS), Green–Lindsay (GL) and the classical dynamical coupled theory (CD)) with the effect of relaxation time are used. The analytical solutions are obtained when the combination processes between the hyperbolic two-temperature theory and photo-thermoelasticity theory under the impact of initial stress and pulsed laser are considered. The harmonic wave is used to attain exact expressions on the main physical fields under photo-excitation processes. The mechanical, thermal and recombination plasma loads are applied at the medium-free surface to get the complete solutions of the basic studied physical fields. Some comparisons are made between the three thermoelasticity models under the electrical impact of thermoelectric coupling parameter, and there are shown graphically and discussed.

A novel stochastic photo-thermoelasticity model according to a diffusion interaction processes of excited semiconductor medium.

A novel technique under the impact of stochastic heating due to the thermal effect of photothermal theory is investigated. Realistically, stochastic processes are taken on the boundary of the semiconductor medium. The interactions between optical, thermal, and mechanical waves in a half-space of the medium are studied according to the photo-thermoelasticity theory. The governing equations are described in one-dimensional elastic-electronic deformation. Laplace transforms with short-time approximation are used to analyze the main physical fields. To study the problem more realistically, some conditions are taken as random with white noise on the free surface of the elastic medium. The deterministic physical quantities are obtained with a stochastic calculus when a numerical inversion of the Laplace transform is applied. The silicon material is utilized to make the stochastic numerical simulation. The comparisons are carried out between the distributions of deterministic and stochastic (statistically, the mean and variance) the main physical quantities along different sample paths graphically and discussed.

A GL photo-thermal theory upon new hyperbolic two-temperatures in a semiconductor material

A novel GL model of a new hyperbolic two-temperatures theory is studied to investigate the propagation of the thermoelastic waves on semiconductor materials. The basic equations are studied during the photo-excitation processes in the context of the photo-thermo-elastic model. The outer surface of the semiconductor medium is illuminated by a laser pulse. By using Laplace transform with the eigenvalues scheme, the analytical solutions of all studying fields are presented. The carrier density variation, the variations of the thermodynamic and the conductive temperatures, the displacement and stress components in a semi-infinite semi-conductor material are estimated. The effects of the hyperbolic two-temperature parameter and the relaxation times on the distributions of wave propagation of physical fields for semiconductor silicon (Si) medium are shown graphically and discussed.

Variable thermal conductivity during photo-thermoelasticy theory of semiconductor medium induced by laser pulses with hyperbolic two-temperature theory

In this work, the effects of interaction between elastic and plasma-thermal waves are studied in the framework of the hyperbolic two-temperature theory. The basic equations are formed during the photo-excitation processes in the context of the photothermal theory. A laser pulse illuminates the outer surface of a semiconductor medium whose thermal conductivity is variable. Three different models of the generalized photo-thermoelasticity theory are applied to a 2D deformation problem. The integral transforms technique are used to solve the problem by applying the double transforms Fourier and Laplace. The inversion of Fourier and Laplace transforms is obtained according to Honig and Hirdes technique. The thermal, mechanical and recombination plasma loads are utilized at the medium-free surface to attain the complete solutions of the main physical fields. A comparison between the three different models of thermoelasticity is performed; in addition, the influence of some physical parameters are studied. Si material has been utilized as an example to ensure the validity of the attained solution.

Photothermoelastic Interactions in Silicon Microbeams Resting on Linear Pasternak Foundation Based on DPL Model

In this work, the photothermal interactions in semiconductor microbeams during the photo-thermo-elastic process have been investigated using the generalized photothermal theory. The proposed mathematical model is constructed based on the Euler–Bernoulli model, the heat equation with two-phase lag and coupled plasma wave equation that indicates the prediction of thermal, elastic and photovoltaic effects in the microbeam resonators. Based on the introduced model, the dynamic influence of thermoelastic photovoltaic microbeam resting on an elastic foundation medium with two parameters has been studied. The Winkler foundation parameter is one of these parameters while the second is the shear foundation parameter. In the field of Laplace transform, the governing equations have been solved while the inverse transforms are found numerically using a tried-and-true approximation technique based on Fourier transform series. The numerical calculations of thermophysical field variables have been discussed and graphically presented. The effects of the magnetic field, Winkler and shear foundation parameters, and lifetime of photogenerated electron have been investigated and studied in detail. Comparisons have been made between the proposed model and previous models that have been derived as special cases from the presented results.

Wave propagation in a temperature rate-dependent semiconducting medium with hydrostatic initial stress

The aim of this paper is to investigate the effect of hydrostatic initial stress and temperature dependence of the modulus of elasticity on surface wave propagation in the semiconducting medium under photothermal theory. An infinite elastic half-space is overlying the infinite semiconducting medium and a mechanical force of constant magnitude is applied along with the interface. Surface wave solutions are used to solve the coupled plasma, thermal, and elastic wave equations. The effect of hydrostatic initial stress and temperature dependent properties have been studied and depicted graphically on the penetration depths of the waves and the components of stresses, displacement, temperature distribution and carrier density. It is observed that the effect of hydrostatic initial stress on the penetration depths is prominent in temperature independent semiconducting medium.

Analysis of semiconducting plate under photothermal theory bordered with inviscid liquid half-spaces

The present investigation is concerned with the study of two-dimensional deformation in an infinite semiconducting plate of uniform thickness bordered with inviscid liquid half-spaces. The plate is under the influence of the mechanical force of constant magnitude. The analytical expressions of displacement components, stress components, temperature distribution, and carrier density are obtained by normal mode analysis. The numerical results are presented graphically to show the effect of the thermoelectric coupling parameter and plate thickness on the physical components.

The Hyperbolic Two Temperature Semiconducting Thermoelastic Waves by Laser Pulses

A novel model of a hyperbolic two-temperature theory is investigated to study the propagation the thermoelastic waves on semiconductor materials. The governing equations are studied during the photo-excitation processes in the context of the photothermal theory. The outer surface of o semiconductor medium is illuminated by a laser pulse. The generalized photo-thermoelasticity theory in two dimensions (2D) deformation is used in many models (Lord–Shulman (LS), Green–Lindsay (GL) and the classical dynamical coupled theory (CD)). The combinations processes between the hyperbolic two-temperature theory and photo-thermoelasticity theory under the effect of laser pulses are obtained analytically. The harmonic wave technique is used to obtain the exact solutions of the main physical fields under investigation. The mechanical, thermal and recombination plasma loads are applied at the free surface of the medium to obtain the complete solutions of the basic physical fields. Some comparisons are made between the three thermoelastcity theories under the electrical effect of thermoelectric coupling parameter. The influence of hyperbolic two-temperature, two-temperature and one temperature parameters on the distributions of wave propagation of physical fields for semiconductor silicon (Si) medium is shown graphically and discussed.

Plasma-elastic-thermal propagation of a rotator semiconductor magneto-electric medium during microtemperature and photothermal excitation processes subjected to mechanical ramp type

ABSTRACT The overlapping between the initial magnetic field and the generalized thermoelasticity theory during the excited semiconductor medium is studied. The microtemperature process in the context of the photothermal theory (due to the thermal effect) is obtained for the main fields of a rotator medium. The disturbances of the elastic-plasma-thermal waves are investigated in two-dimensional (2D) deformation. The governing equations are discussed in the Fourier and Laplace domains when microelements possess microtemperatures. The basic analytical solutions of the main variables are constructed with Laplace transform. The boundary conditions as well as mechanical ramp and isothermal type are applied on the outer surface of the semiconductor elastic medium to obtain the unknown parameters. The complete solutions of the main variables field in the space-time domain are observed when the inversion techniques are used numerically. The effects of parameters of rotation, thermoelectric coupling, and magnetic field are discussed theoretically and graphically in 2D and 3D.

Response of Mechanical Ramp Type of Semiconductor Magneto-Rotator Medium with Variable Thermal Conductivity during Photo-Excitation Microelement Processes

The effect of external magnetic field during microelement processes is used to discuss the excited semiconductor medium in generalized thermoelasticity theory. The thermal conductivity which depends on the temperature is investigated in the context of the photothermal theory to obtain the main variables for a rotator elastic semiconductor medium. In this case the thermal conductivity is variable. The elastic-plasma-thermal waves in two-dimension (2D) deformation have been constructed. Fourier and Laplace integral transformations are used to solve the main governing equations under the effect of microtemperature vector field. Analytical solutions of the main physical field quantities are obtained under these transformations to get the solutions in the physical domain. The mechanical ramp type condition and some other thermal-elastic-plasma conditions are applied on the outer free surface of the medium. To obtain complete solutions for the basic physical quantities, numerical inversion methods of Fourier and Laplace transformations are used in space-time physical domain. Some comparisons are made for some several parameters that they represent graphically and discussed.

Response of a semiconducting medium under photothermal theory due to moving load velocity

The present research article deals with the study of steady-state response due to moving load in a semiconducting medium under photothermal theory. The applied load is moving with constant speed U for an infinitely long time over the free surface of a homogeneous semiconducting medium. The governing equations of motion and heat conduction equation have been solved analytically. The effects of the velocity of the moving load and thermoelectric coupling parameter on displacement components, force stress, carrier density, and temperature distribution have been investigated. Numerical results obtained from the present study are presented graphically for normal displacement, normal force stress, carrier density, and temperature distribution.

Analytical solution of a rotating semiconductor elastic medium due to a refined heat conduction equation with hydrostatic initial stress

The semiconductor elastic medium in the context of the photothermal theory under the influence of rotation field is studied. A novel model of the governing equations is investigated due to the refined multi-phase-lags with the thermal relaxation times of the heat equation with the hydrostatic initial stress during transport process of the photothermal phenomenon. The interaction between the multi-waves of elastic-thermal-plasma is obtained. The normal mode method in the two dimensions is applied to obtain the exact solutions of the basic physical quantities under investigation. Plasma, thermal and mechanical loads have been applied on the free surface of the semi-infinite semiconductor elastic medium to get the complete solutions of the basic physical fields. Some comparisons are shown graphically and they are discussed as a function of thermal memories with the variation of some parameters. Silicon (Si) material is used to make the numerical simulation and to display the sensitivity to the variation of the rotation parameter.

Plane wave propagation in a semiconducting medium under photothermal theory

In the present investigation, surface wave propagation in a semiconducting medium under photothermal theory has been discussed. A non-viscous fluid of uniform thickness is overlying the infinite semiconducting half-space. The governing equations for the above problem are solved for surface wave solutions. A mechanical force of constant magnitude is applied along the interface of two media. The components of displacement, stresses, carrier density, and temperature distribution at the interface are obtained for the semiconducting medium. The effect of the thermoelectric coupling parameter is also shown on the penetration depth of various waves. Also, the effect of fluid layer depth is depicted by the graphical results for normal displacement, normal force stress, carrier density, and temperature distribution.

Ramp-type heating microtemperature for a rotator semiconducting material during photo-excited processes with magnetic field

The main objective of this discussion is to examine the interaction between the magnetic field and the excited semiconductor medium during the microtemperature process. The photothermal theory is used to obtain the main variables based on the generalized thermoelasticity theory of a rotator medium. The elastic-plasma-thermal transport processes in two-dimensions (2D) have been constructed. Moreover, the Fourier and Laplace integral transformations are used for the main governing equations under the influence of microtemperature vector field. The analytical solutions of the basic physical field quantities are obtained in the physical domain. The ramp type heating and some other mechanical-thermal-elastic-plasma conditions are applied on the free surface of the medium to determine the unknown parameters. To obtain the complete solutions of the main physical field quantities, the numerical inversion techniques of Fourier and Laplace transformations are used in space–time physical domain. Some comparisons are carried out for some several parameters graphically and discussed.