A novel approach to analyzing the stability of physical fields in semiconductor materials under photothermal excitation

Abstract

This work employs a new approach to study the stability heating effects caused by the thermal influence of photothermal theory. In addition, our investigation identified stability mechanisms occurring at the limits of the semiconductor (SC) medium. We have examined the interactions of photosensitive, thermic, and mechanical waves inside a medium's half-space using the theory of photo-thermoelectricity. The establishment of governing equations is achieved by utilizing one-dimensional elastic-optoelectronic deformation. Utilizing advanced mathematical techniques, such as Laplace transform with short-time approximations, we transform the foremost physical domains to the frequency domain, imposing conditions on the free surface of the elastic medium to enhance stability. Employing the homotopy perturbation method, the stability of the main physical quantities is obtained, with silicon as the chosen material. Graphical analyses and discussions elucidate the physical fields after applying the numerical Laplace inverse technique with the effect of some factors like the thermo-electric coupling parameter. Comparisons between some materials like silicon and germanium are being investigated. The stability of main physical quantities with various values of eigenvalues approaches are obtained with the dual solutions of the eigenvalues.