Photonic Integrated Circuits Research Articles

Two-dimensional non-Abelian Thouless pump

Non-Abelian Thouless pumps are periodically driven systems designed by the non-Abelian holonomy principle, in which quantized transport of degenerate eigenstates emerges, exhibiting noncommutative features such that the outcome depends on the pumping sequence. The study of non-Abelian Thouless pump is currently restricted to 1D systems, while extending it to higher-dimensional systems will not only provide effective means to probe non-Abelian physics in high-dimensional topological systems, but also expand the dimension and type of associated non-Abelian geometric phase matrix for potential applications. Here, we propose the design and experimental realization of 2D non-Abelian Thouless pumps on a photonic chip with 2D photonic waveguide arrays, where degenerate photonic modes are topologically pumped simultaneously along two real-space directions. We reveal the associated non-Abelian group and experimentally demonstrate the non-Abelian feature by measuring the pumping sequence dependent output. The proposed 2D non-Abelian Thouless pump shows promising applications for robust optical interconnections and optical computing.

Multimodal In-Sensor Computing System Using Integrated Silicon Photonic Convolutional Processor.

Photonic integrated circuits offer miniaturized solutions for multimodal spectroscopic sensory systems by leveraging the simultaneous interaction of light with temperature, chemicals, and biomolecules, among others. The multimodal spectroscopic sensory data is complex and has huge data volume with high redundancy, thus requiring high communication bandwidth associated with high communication power consumption to transfer the sensory data. To circumvent this high communication cost, the photonic sensor and processor are brought into intimacy and propose a photonic multimodal in-sensor computing system using an integrated silicon photonic convolutional processor. A microring resonator crossbar array is used as the photonic processor to implement convolutional operation with 5-bit accuracy, validated through image edge detection tasks. Further integrating the processor with a photonic spectroscopic sensor, the in situ processing of multimodal spectroscopic sensory data is demonstrated, achieving the classification of protein species of different types and concentrations at various temperatures. A classification accuracy of 97.58% across 45 different classes is achieved. The multimodal in-sensor computing system demonstrates the feasibility of integrating photonic processors and photonic sensors to enhance the data processing capability of photonic devices at the edge.

Nonvolatile reconfigurable polarization rotator at datacom wavelengths based on a Sb2Se3/Si waveguide

Silicon photonics has become a key platform for photonic integrated circuits (PICs) due to its high refractive index and compatibility with complementary metal-oxide-semiconductor manufacturing. However, the inherent birefringence in silicon waveguides requires efficient polarization management. Here, we report a reconfigurable polarization rotator (PR) using a Sb2Se3/Si waveguide operating at datacom wavelengths (1310 nm), providing nonvolatile switching with zero static power consumption. The polarization conversion relies on the interference of hybrid electric-magnetic (EH) modes, which can be reconfigured by changing the Sb2Se3 state between amorphous and crystalline. Our experimental device exhibits a polarization conversion efficiency (PCE) and a polarization extinction ratio (PER) as high as -0.08 dB and 17.65 dB, respectively, in a compact footprint of just 21 µm length. Therefore, the proposed reconfigurable PR offers a compact and energy-efficient solution for polarization management in silicon photonics, with potential applications in data communication networks and emerging applications benefiting from polarization information encodings, such as optical neural networks and quantum computing.

Multi-task photonic reservoir computing: wavelength division multiplexing for parallel computing with a silicon microring resonator

Nowadays, as the ever-increasing demand for more powerful computing resources continues, alternative advanced computing paradigms are under extensive investigation. Significant effort has been made to deviate from conventional Von Neumann architectures. In-memory computing has emerged in the field of electronics as a possible solution to the infamous bottleneck between memory and computing processors, which reduces the effective throughput of data. In photonics, novel schemes attempt to collocate the computing processor and memory in a single device. Photonics offers the flexibility of multiplexing streams of data not only spatially and in time, but also in frequency or, equivalently, in wavelength, which makes it highly suitable for parallel computing. Here, we numerically show the use of time and wavelength division multiplexing (WDM) to solve four independent tasks at the same time in a single photonic chip, serving as a proof of concept for our proposal. The system is a time-delay reservoir computing (TDRC) based on a microring resonator (MRR). The addressed tasks cover different applications: Time-series prediction, waveform signal classification, wireless channel equalization, and radar signal prediction. The system is also tested for simultaneous computing of up to 10 instances of the same task, exhibiting excellent performance. The footprint of the system is reduced by using time-division multiplexing of the nodes that act as the neurons of the studied neural network scheme. WDM is used for the parallelization of wavelength channels, each addressing a single task. By adjusting the input power and frequency of each optical channel, we can achieve levels of performance for each of the tasks that are comparable to those quoted in state-of-the-art reports focusing on single-task operation. We also quantify the memory capacity and nonlinearity of each parallelized RC and relate these properties to the performance of each task. Finally, we provide insight into the impact of the feedback mechanism on the performance of the system.

Silicon-based double fano resonances photonic integrated gas sensor

The telecommunication wavelengths are crucial for developing a photonic integrated circuit (PIC). The absorption fingerprints of many gases lie within these spectral ranges, offering the potential to create a miniaturized gas sensor for PIC. This work presents novel double Fano resonances within the telecommunication band, based on silicon metasurfaces for selective gas sensing applications. Our proposed design comprises periodically coupled nanodisk and nanobar resonators mounted on a quartz substrate. Fano resonances can be engineered across the range from λ = 1.52 μm to λ = 1.7 μm by adjusting various geometrical parameters. A double detection sensor of carbon monoxide (CO) at λ = 1.566 μm and nitrous oxide (N2O) at λ = 1.674 μm is developed. The sensor exhibits exceptional refractometric sensitivity to CO of 1,735 nm/RIU with an outstanding FOM of 11,570 at the first Fano resonance (FR1). In addition, the sensor shows a sensitivity to N2O of 194 nm/RIU accompanied by an FOM of 510 at the second Fano resonance (FR2). The structure reveals absorption losses of 6.3% for CO at the FR1, indicating the sensor selectivity to CO. The sensor is less selective at FR2 and limited to spectral shifts induced by each gas type. Our proposed design holds significant promise for the development of a highly sensitive double-sensing refractometric photonic integrated gas sensor.

Quantum Physical Unclonable Function Based on Multidimensional Fingerprint Features of Single Photon Emitters in Random AlN Nanocrystals

AbstractPhysical unclonable function (PUF) has emerged as a unique physical'fingerprint' that is inherently difficult to replicate. It shows tremendous application value in various hardware security areas such as identity authentication, chip anticounterfeiting, communication encryption, blockchain, etc. However, with the rapid development of 3D nanoprinting, classical PUFs constructed with disordered micro‐nanostructures face tremendous threats from physical cloning attacks. Herein, this study proposes and demonstrates the utilization of room‐temperature single‐photon emitters derived from atomic defects in randomly distributed pyramidal aluminum nitride (AlN) nanocrystals as a novel quantum PUF to resist physical cloning attacks. The fabrication of this quantum PUF on silicon (Si) wafers enables seamless integration with silicon photonic integrated circuits. The multidimensional fingerprint features of the single‐photon emitters are highly sensitive to the lattice parameters of the uneven AlN nanocrystals. Furthermore, each single photon emitter can work as a quantum random number generator to ensure the fundamental unpredictability of PUFs. The subatomic precision requirement coupled with unpredictable quantum emission behavior makes it practically impossible to attack the proposed quantum PUF, providing a promising solution for information security in the post‐quantum era.

First demonstration of lithium niobate photonic chip for dense wavelength-division multiplexing transmitters

First demonstration of lithium niobate photonic chip for dense wavelength-division multiplexing transmitters

Multi-particle quantum walks on 3D integrated photonic chip

Quantum walks provide a speed-up in computational power for various quantum algorithms and serve as inspiration for the construction of complex graph representations. Many pioneering works have been dedicated to expanding the experimental state space and the complexity of graphs. However, these experiments are mostly limited to small experimental scale, which do not reach a many-body level and fail to reflect the multi-particle quantum interference effects among non-adjacent modes. Here, we present a quantum walk with three photons on a two-dimensional triangular lattice, which is mapped to a 19 × 19 × 19 high-dimensional state space and constructs a complex graph with 6859 nodes and 45,486 edges. By utilizing the statistical signatures of the output combinations and incorporating machine learning techniques, we successfully validate the nonclassical properties of the experiment. Our implementation provides a paradigm for exponentially expanding the state space and graph complexity of quantum walks, paving the way for surmounting the classical regime in large-scale quantum simulations.

Efficient mass manufacturing of high-density, ultra-low-loss Si3N4 photonic integrated circuits

Silicon nitride (Si3N4) photonic integrated circuits (PICs) offer significant advantages over traditional silicon photonics, including low loss and superior power handling at optical communication wavelength bands. To facilitate high-density integration and effective nonlinearity, the use of thick, stoichiometric Si3N4 films is crucial. However, when using low-pressure chemical vapor deposition (LPCVD) to achieve high optical material transparency, Si3N4 films exhibit large tensile stress on the order of GPa, leading to wafer cracking that challenges mass production. Methods for crack prevention are therefore essential. The photonic Damascene process has addressed this issue, attaining record low-loss Si3N4 PICs, but it lacks control of the waveguide height, leading to large random variations of waveguide dispersion and unpredictable spectrum responses of critical functional devices such as optical couplers. Conversely, subtractive processes achieve better dimension control but rely on techniques unsuitable for large-scale production. To date, an outstanding challenge is to attain both lithographic precision and ultra-low loss in high-confinement Si3N4 PICs that are compatible with large-scale foundry manufacturing. Here, we present a single-step deposited, DUV-based subtractive method for producing wafer-scale ultra-low-loss Si3N4 PICs that harmonize these necessities. By employing deep etching of densely distributed, interconnected trenches into the substrate, we effectively mitigate the tensile stress in the Si3N4 layer, enabling direct deposition of thick films without cracking and substantially prolonged storage duration. A secondary ion mass spectrometry (SIMS) analysis reveals that these deep trenches simultaneously serve as gettering centers for metal impurities, in particular copper, thereby reducing the absorption loss in Si3N4 waveguides. Lastly, we identify ultraviolet (UV)-radiation-induced damage that can be remedied through a rapid thermal annealing. Collectively, we develop ultra-low-loss Si3N4 microresonators and 0.5-m-long spiral waveguides with losses down to 1.4 dB/m at 1550 nm with high production yield. This work addresses the long-standing challenges toward scalable and cost-effective production of tightly confined, low-loss Si3N4 PICs as used for quantum photonics, large-scale linear and nonlinear photonics, photonic computing, and narrow-linewidth lasers.

Demonstration of a photonic integrated circuit for quantitative phase imaging

Demonstration of a photonic integrated circuit for quantitative phase imaging

Recent Progress in Electro‐Optic Modulators: Physical Phenomenon, Structures Properties, and Integration Strategy

AbstractElectro‐optic modulators (EOMs), serving as indispensable components within photonic integrated circuits, are essential for enabling energy‐efficient, high‐speed, and high‐capacity optical communication systems. This review illustrates the principal physical phenomenon exploited in EOMs and provides a comprehensive analysis of the cutting‐edge EOMs featuring interference structures (Mach–Zehnder modulators and Michelson‐interferometer modulators) and resonance structures (microring modulators, racetrack modulators, and photonic crystal modulators). The comparative analysis of the performance merits and limitations in EOMs is presented, highlighting the combination of diverse electro‐optic material compositions with different optical structures, which reveals a promising integration strategic so as to pursue a trade‐off in modulation performance. It is contributed to the ongoing discourse on optimizing EOMs for the subsequent communication technologies and the advancement of photonic chips.

An Ultrasensitive and Broad-Spectrum MoS2 Photodetector with Extrinsic Response Using Surrounding Homojunction.

As unique building blocks for advancing optoelectronics, 2D semiconducting transition metal dichalcogenides have garnered significant attention. However, most previously reported MoS2 photodetectors respond only to visible light with limited absorption, resulting in a narrow spectral response and low sensitivity. Here, a surrounding homojunction MoS2 photodetector featuring localized p-type nitrogen plasma doping on the surface of n-type MoS2 while preserving a high-mobility underlying channel for rapid carrier transport is engineered. The establishment of p-n homojunction facilitates the efficient separation of photogenerated carriers, thereby boosting the device's intrinsic detection performance. The resulting photoresponsivity is 6.94×104AW-1 and specific detectivity is 1.21×1014 Jones @ 638nm, with an optimal light on/off ratio of ≈107 at VGS = -27V. Notably, the introduction of additional bands within MoS2 bandgap through nitrogen doping leads to an extrinsic broadband response to short-wave infrared. The device exhibits a photoresponsivity of 34AW-1 and a specific detectivity of up to 5.92×1010 Jones @ 1550nm. Furthermore, the high-performance broadband response is further demonstrated through imaging and integration with waveguides, paving the way for next generation of multifunctional imaging systems and high-performance photonic chips.

Ge2Sb2Se4Te on n = 1 ITO: a monolithic platform for integrated photonics with mode symmetrization and post-fabrication tuning

We demonstrate, to our knowledge, a novel monolithic platform for photonic integrated circuits (PICs) based on amorphous-Ge2Sb2Se4Te (am-GSST). Additionally, we explore the concept of mode symmetrization using the epsilon-near-zero behavior displayed by indium-tin-oxide (ITO) to achieve a substrate with n=1 at 1550 nm, the same as the air cladding. We designed, fabricated, and characterized various on-chip components using this platform, including waveguides with preliminary 5.57±0.365dB/mm propagation loss. Furthermore, we propose a post-fabrication tuning of the refractive index by using the phase change nature of GSST to crystallize local sections of the waveguides using electron beams. Our substrate-blind approach is a versatile platform for post-fabrication tunable PICs that could benefit intricate on-chip nanophotonic structures requiring enhanced and symmetric mode confinement.

CMOS optoelectronic spectrometer based on photonic integrated circuit for in vivo 3D optical coherence tomography

Photonic integrated circuits (PICs) represent a promising technology for the much-needed medical devices of today. Their primary advantage lies in their ability to integrate multiple functions onto a single chip, thereby reducing the complexity, size, maintenance requirements, and costs. When applied to optical coherence tomography (OCT), the leading tool for state-of-the-art ophthalmic diagnosis, PICs have the potential to increase accessibility, especially in scenarios, where size, weight, or costs are limiting factors. In this paper, we present a PIC-based CMOS-compatible spectrometer for spectral domain OCT with an unprecedented level of integration. To achieve this, we co-integrated a 512-channel arrayed waveguide grating with electronics. We successfully addressed the challenge of establishing a connection from the optical waveguides to the photodiodes monolithically co-integrated on the chip with minimal losses achieving a coupling efficiency of 70%. With this fully integrated PIC-based spectrometer interfaced to a spectral domain OCT system, we reached a sensitivity of 92dB at an imaging speed of 55kHz, with a 6dB signal roll-off occurring at 2mm. We successfully applied this innovative technology to obtain 3D in vivo tomograms of zebrafish larvae and human skin. This ground-breaking fully integrated spectrometer represents a significant step towards a miniaturised, cost-effective, and maintenance-free OCT system.

A ring resonators optical sensor for multiple biomarkers detection

In the recent years, the number of Point-Of-Care-Tests (POCTs) available for clinical diagnostic has steadily increased. POCTs provide a near-patient testing with the potential to generate a result quickly so that appropriate treatment can be implemented, leading to improved clinical outcomes compared to traditional laboratory testing. Technological advances, such as miniaturization of sensors and improved instrumentation, have revolutionized POCTs, enabling the development of smaller and more accurate devices. In this context, it has also gained increasing importance the screening of various analytes simultaneously to increase specificity and improve the characterization of the disease. This study is aimed at developing and characterizing a photonic integrated circuit for multiple markers detection, which represents the functional core towards a full developed POCT device for clinical pathology applications. The photonic sensor, based on microring resonators (MRRs), is functionalized by immobilizing specific antibodies on a copolymer layer deposited on the MRR’s surfaces. Surface chemical techniques were employed to analyse the surface chemical characteristics while fluorescence microscopy was involved to analyse the resulting bioreceptor surface density. The photonic sensor is characterized for the parallel detection of two biomarkers, the C-Reactive Protein (CRP) and the Creatine-Kinase-MB (CK-MB). The analyte-antibody binding curves were obtained both in buffer and in filtered un-diluted artificial saliva showing promising results both in terms of sensitivity, with limit of detection (LOD) of 103 pM for CRP and 140 pM for CK-MB, and in terms of specificity. These encouraging results let the assembly of a highly sensitive POC device for molecular diagnostics.

Application Exploration of the Photon Chip Technology in Real time Processing of Biomedical Images

In the biomedical field, photonic chip technology is gradually becoming the key to improving the speed and accuracy of medical imaging. The development of this technology has given us new hope in early disease diagnosis and cell monitoring. Recent research has not only sorted out the hotspots and future trends of biomedical photonics, but also paid special attention to the application of photon technology in these fields. Specifically, photonic chips have demonstrated their unique capabilities in multi-color two-photon excitation fluorescence microscopy imaging, two-photon fluorescence lifetime imaging, and two-photon fiber endoscopic imaging. These applications not only improve the clarity of imaging, but also accelerate processing speed, which is crucial for rapid diagnosis and treatment. At the end of the article, the author summarized the contributions of photonic chip technology in the field of biomedical imaging and provided prospects for future development directions.

Robust Characterization of Photonic Integrated Circuits

AbstractPhotonic integrated circuits (PICs) offer ultra‐broad optical bandwidths that enable unprecedented data throughputs for signal processing applications. Dynamic reconfigurability enables compensation of fabrication flaws and fluctuating external environments, tuning for adaptive equalization and training of optical neural networks. The initial step in PIC reconfiguration entails measuring its dynamic performance, often described by its frequency response. While measuring the amplitude response is straightforward, e.g. using a tunable laser and optical power meter, measuring the phase response presents challenges due to various factors, including phase variations in test connections and instrumentation limitations. To address these challenges, a universal and robust characterization technique is proposed, which uses an on‐chip reference path coupled to the signal processing core (SPC), with a delay gap larger than the total delay across the signal processing paths. A Fourier transform of the chip's power response reveals the SPC's impulse response. The method is more robust against low reference‐path power and imprecise delays. Experiments using a finite‐impulse‐response (FIR) structure demonstrate rapid SPC training, overcoming thermal crosstalk and device imperfections. This approach offers a promising solution for PIC characterization, facilitating expedited physical parameter training for advanced applications in communications and optical neural networks.

Mixed domain coherent link with electrically reconfigurable IMDD and coherent modes for O-band data center applications

We report the first O-band link with electrically reconfigurable intensity-modulation direct-detection (IMDD) and coherent operation using custom silicon photonic chips packaged with commercial electronic chips. Transmission below the KP4-FEC threshold is shown using commercial 53 Gbaud PAM4 digital signal processing (DSP) for 16QAM (200 Gbps/λ) and PAM4 (100 Gbps/λ). Efficient operation of the packaged full link at 12 and 11.2 pJ/bit is achieved for the PAM4 and 16QAM modes, respectively.

Design of the Single Heterogeneous Quantum Dot Lasers Emitting 4 Wavelengths Using Combination‐Grating Technology

AbstractMulti‐wavelength light sources are crucial for high‐bandwidth silicon photonic chips. In this paper, a single heterogeneous quantum dot distributed feedback (DFB) laser emitting 4 wavelengths using the combination‐grating technology is designed. To the best of the knowledge, this is the first heterogeneously integrated quantum dot DFB laser that lases stable multi‐wavelength in a single cavity. When the etching depth, etching width, and total length of gratings are 100 , 550 nm, and 1 000 µm, respectively, 4‐wavelength with 1297.01 , 1303.38 , 1309.74 , and 1316.11 nm are obtained by varying the grating period from 196 to 199 nm with the spacing of 1 nm. Compared to the conventional DFB laser arrays, the DFB laser units are significantly reduced by 3/4 while maintaining the same number of output wavelengths. Additionally, by optimizing the λ/4 phase‐shift position and the duty cycle of gratings, the output power at the front‐end of the 4‐wavelength laser is significantly improved. Specifically, the ratio of the output power from the front‐end and rear‐end of the laser increases from the conventional 1.00 to 2.51. This work provides a competitive candidate for multi‐wavelength, high‐performance, and large‐scale silicon‐based light sources used in data centers, lidar, and component detection.

100-nm Broadband and Ultra-compact Multi-dimensional Multiplexed Photonic Integrated Circuit for High-capacity Optical Interconnects

100-nm Broadband and Ultra-compact Multi-dimensional Multiplexed Photonic Integrated Circuit for High-capacity Optical Interconnects