Photonic Components Research Articles

(Invited) Epitaxial III-V Nanomaterials on the Si Platform for Quantum and Data Communications

As Si-based integrated photonic components begin to replace older technologies for optical data communications, the need for better integration of semiconductor lasers on the Si platform is greater than ever. In addition, emerging interest in integrated-photonic-based quantum computing and quantum sensing presents a further need for quantum light emitters—entangled and single-photon—on Si. III-V quantum dots represent a promising solution, both for the active region of telecommunications-wavelength lasers and for quantum emitters. However, epitaxial quantum dots grown on conventional (100) substrates typically lack the high symmetry required for entangled-photon emission.This presentation will discuss our recent work to develop a novel approach for III-V direct growth on Si via an ultrathin (<10 nm) single crystal strain relieving buffer layer, realized by the selective oxidation and condensation of an amorphous SiGe surface layer. The fabrication and properties of this novel Ge-rich buffer layer, as well as its use for subsequent III-V organometallic vapor-phase epitaxy will be presented.The second part of the talk will present our recent work on the epitaxial growth and characterization of (In,Ga)As quantum dots for the above-mentioned applications. Specifically, I will show that surface-energy-modifying surfactants (Sb, Bi) present the possibility to externally direct quantum dot formation “on-demand” in strained InAs layers on GaAs(111) substrates, where quantum dot formation by the Stranski–Krastanov process does not naturally occur. These nanostructures are prospective for high-symmetry entangled-photon emitters. The three-dimensional (3D) composition profile of InAs quantum dot layers is characterized by atom-probe microscopy (APT), elucidating the real-world quantum dot matrix. This 3D composition data is input into a finite element solver to determine the quantum dot energies and wavefunctions for electrons and holes. The modeling reveals that in high-density quantum dot layers, the electron and hole states are hybridized between multiple quantum dots in the matrix. This has important consequences for design of quantum dot light emitters. The predicted transition energies are in agreement with low-temperature photoluminescence. This work constitutes a promising approach for integrating telecommunications-wavelength quantum dot lasers and entangled photon emitters on the Si integrated photonics platform.

Telecom Photon Emitters Based on Isolated Group-IV Quantum Dots Deterministically Coupled to High-Q Photonic Crystal Cavities

The realization of scalable telecom light emitters that can be monolithically implemented into large-scale Si integration technology has been a driving factor in the field of Si photonics for the last decades. Applications are envisioned in the short and medium-range data transfer and for realizing scalable, Si-based quantum information technology. For the latter, CMOS-compatible sources that can be controlled on the single photon level are needed. In solid-state materials, group-III-V quantum dots (QDs) are one of the leading platforms for realizing single photon emitters of excellent optical quality [1,2]. However, their emission outside the telecom band and the difficulty of combining them with the mature Si photonics components such as waveguides remain an ongoing problem.In the group-IV (SiGe) system, the bandgap of the bulk materials is indirect, and electron and hole states in QDs are spatially separated due to the type-II band alignment. These material properties lead to relatively long radiative lifetimes and small emission efficiencies. However, for Si/SiGe QDs grown on silicon on insulator substrates (SOI), these efficiencies can be strongly and deterministically Purcell-enhanced by aligning photonic crystal cavities with single QDs [3]. One necessary prerequisite is, therefore, to achieve perfect nucleation site control of the QDs on the substrates [4,5]. This nucleation control can be achieved by deterministic substrate patterning combined with Ge growth in the supersaturation regime of the two-dimensional wetting layer [6], utilizing Ge's extensive surface diffusion lengths at growth temperatures above 600°C [7]. In such a way, it is possible to grow isolated QDs with virtually arbitrary inter-QD distance [4,5].Here, one isolated QD was grown on a substrate area of the size of 100´100 µm2 [8]. We demonstrate the accurate QD positioning in PhC cavities [3,8], particularly in bichromatic cavities. Bichromatic cavities, a relatively novel design of photonic crystal cavity, offer ultra-high quality factor, and therefore Purcell enhancement, that is achievable with simple design rules [9]. Unlike in standard line defect cavities, in the present bichromatic layout, the line defect consists of a periodic sequence of holes, leaving only narrow Si regions.For this reason, an extremely high accuracy for QD positioning is required, which can be provided by interlacing site control of QD growth and PhC cavity formation. In micro photoluminescence spectra, the modes of single cavities are clearly observed. From the dependence of the mode intensities on the temperature and the excitation intensity, modes fed by the single QD in the cavity can be identified. We observe ultra-high quality factors of up to 100,000 for the modes coupled to QDs [8]. For resonators loaded with a QD, such high Q-factor values are record-high for the silicon-on-insulator integrated optics platform. Results on the excited state lifetime will be discussed.[1] D. Huber et al., Phys. Rev. Lett. 121, 33902 (2018)[2] N. Somaschi et al., Nature Photonics 10, 340 (2016)[3] M. Schatzl et al., ACS Photonics 4, 665 (2017)[4] M. Grydlik et al., Nanotechnology 24, 105601 (2013)[5] M. Brehm, et al., Nanotechnology 28, 392001 (2017)[6] M. Brehm, et al., Physical Review B 80 (20), 205321 (2009)[7] M. Grydlik et al., Physical Review B 88 (11), 115311 (2013)[8] T. Poempool et al., Optics Express 31 (10), 15564-15578 (2023)[9] A. Simbula et al., APL Photonics 2, 056102 (2017).

Epitaxial Group-IV Quantum Dots as Room-Temperature Light Emitters

Next-generation Si-based applications ranging from short-range (quantum) data transfer to sensing could highly benefit from potential progress in group-IV-based telecom light emitters that can be readily implemented with Si Photonics components [1]. However, since Si is known to be an indirect band gap semiconductor, light emission is limited and inhibits the integration of efficient emitters, such as, e.g. light-emitting diodes and lasers on Si Photonic platforms.In this presentation, we stress that a particular type of epitaxial Ge on Si quantum dots allows for overcoming the indirect bandgap limitations of Si and Ge and, thus, enables pronounced light emission even at room temperature and above [2]. These nanostructures consist of ~2 nm high Ge-rich quantum dots on Si(001) substrate epitaxially created via strain-driven formation. However, in contrast to commonly used nanostructures, we intentionally incorporate point defects into these nanostructures during their growth through in-situ low-energy Ge ion implantation [3-4]. Therefore, the point defects can be confined within the 2 nm thick Ge layer while the surrounding Si matrix remains perfectly crystalline. We will discuss the superior light-emission properties of these so-called defect-enhanced quantum dots (DEQDs) and present the current theoretical understanding of the defect’s effects on the band structure. The latter leads to the enhanced light emission from DEQDs and the opening of direct recombination channels in k-space [5,6].In addition to signs for optically pumped lasing from DEQDs embedded in microdisk resonators, implementing these emitters into the i-region of p-i-n diodes is remarkably straightforward since the matrix material is crystalline Si [7,8]. To showcase the superior properties of these zero-dimensional light emitters, we highlight light emission from DEQD light-emitting diodes with exceptional temperature stability up to 100°C [9]. This behavior starkly contrasts conventional Si/Ge light emitters, for which the light emission is typically confined to cryogenic temperatures.For optimizing the light emission from this interlaced defect/nanostructure complex [10], we elaborate on the testing of crucial parameters related to the temperature stability of the DEQDs [8,11], the scalability of light emission with increasing the density of the DEQDs [12] and passivation of detrimental defects in the Si matrix [13].[1] I. A. Fischer, et al., APL Photonics 7, 050901 (2022).[2 ] M. Brehm, Silicon Photonics IV, 67-103, Silicon Photonics IV: Innovative Frontiers, edited by David J. Lockwood and Lorenzo Pavesi, Springer series Topics in Applied Physics (2021).[3] M. Grydlik, et al., Nano Lett. 16, 6802–6807 (2016).[4] M. Grydlik, et al., ACS Photonics 3, 298–303 (2016).[5] F. Murphy-Armando, et al., Physical Review B 103 (8), 085310 (2021).[6] M. Brehm, et al., to be published[7] H. Groiss et al., Semicond. Sci. Technol. 32, 02LT01 (2017).[8] L. Spindlberger et al., Crystals 10, 351 (2020).[9] P. Rauter et al., ACS Photonics 5, 431-438 (2018).[10] M. Brehm and M. Grydlik, Nanotechnology 28, 392001 (2017).[11] L. Spindlberger et al., Physica Status Solidi (a) 216, 1900307 (2019).[12] H. Groiss et al., Semicond. Sci. Technol. 32, 02LT01 (2017).[13] L. Spindlberger et al., Appl. Phys. Lett. 118, 083104 (2021).

Enabling data-driven and bidirectional model development in Verilog-A for photonic devices.

We present a method to model photonic components in Verilog-A by introducing bidirectional signaling through a single port. To achieve this, the concept of power waves and scattering parameters from electromagnetism are employed. As a consequence, one can simultaneously transmit forward and backward propagating waves on a single wire while also capturing realistic, measurement-backed responses of photonic components in Verilog-A. We demonstrate examples to show the efficacy of the proposed technique in accounting for critical effects in photonic integrated circuits such as Fabry-Perot cavity resonance, reflections to lasers, reflection cancellation circuits, etc. Our solution makes electronic-photonic co-simulation more intuitive and accurate.

Branched flow of light and interplay with input phase front curvature in a disordered photonic lattice

Branched flow refers to the bifurcation of waves as they propagate through customized disordered media, leading to the creation of multiple channels or branches. This dynamic wave phenomenon has been observed in various disordered systems under specific conditions. In our study, we demonstrate the branched flow of light within a disordered photonic lattice and establish that the intensity distribution of these branches follows Lévy statistics. This behavior is more pronounced when the wavefront of the input light beam is adjusted, resulting in the propagation of more stable branches through the structure. We also investigated the formation of light branches with varying input beam widths and the impact of two simultaneous input beams on the disordered photonic lattice. Our findings indicate that the distribution of branches in the disordered system can be controlled by shaping the wavefront of the input beam, which has potential applications in imaging, nano-lasing, and integrated photonic components. This research opens new avenues for fundamental studies on the manipulation of light through complex photonic systems.

Integrating deep convolutional surrogate solvers and particle swarm optimization for efficient inverse design of plasmonic patch nanoantennas.

Plasmonic nanoantennas with suitable far-field characteristics are of huge interest for utilization in optical wireless links, inter-/intrachip communications, LiDARs, and photonic integrated circuits due to their exceptional modal confinement. Despite its success in shaping robust antenna design theories in radio frequency and millimeter-wave regimes, conventional transmission line theory finds its validity diminished in the optical frequencies, leading to a noticeable void in a generalized theory for antenna design in the optical domain. By utilizing neural networks, and through a one-time training of the network, one can transform the plasmonic nanoantennas design into an automated, data-driven task. In this work, we have developed a multi-head deep convolutional neural network serving as an efficient inverse-design framework for plasmonic patch nanoantennas. Our framework is designed with the main goal of determining the optimal geometries of nanoantennas to achieve the desired (inquired by the designer) S 11 and radiation pattern simultaneously. The proposed approach preserves the one-to-many mappings, enabling us to generate diverse designs. In addition, apart from the primary fabrication limitations that were considered while generating the dataset, further design and fabrication constraints can also be applied after the training process. In addition to possessing an exceptionally rapid surrogate solver capable of predicting S 11 and radiation patterns throughout the entire design frequency spectrum, we are introducing what we believe to be the pioneering inverse design network. This network enables the creation of efficient plasmonic antennas while concurrently accommodating customizable queries for both S 11 and radiation patterns, achieving remarkable accuracy within a single network framework. Our framework is capable of designing a wide range of devices, including single band, dual band, and broadband antennas, with directivities and radiation efficiencies reaching 11.07 dBi and 75 %, respectively, for a single patch. The proposed approach has been developed as a transformative shift in the inverse design of photonics components, with its impact extending beyond antenna design, opening a new paradigm toward real-time design of application-specific nanophotonic devices.

Evanescent field engineering to reduce cross-talk in pattern-free suspended graphene-based plasmonic waveguides using nano-strips

Suppression of the cross-talk between neighboring photonic components has been considered one of the most efficient methods for increasing the packing density of photonic integrated circuits. In this study, an effective cross-talk reduction approach is developed for plasmonic waveguides. Firstly, the mode characteristics of the waveguide are investigated, and then two silicon strips are placed beside the two adjacent waveguides. The mechanism of the cross-talk suppression method highly relies on the evanescent waves. The designed strips in this study manipulate the wave vectors of surface plasmon polaritons. The tangential component of the wave vector is conserved along the interface, while the perpendicular component in the surroundings can be equal to zero or imaginary, leading to evanescent waves. Placing the strips increases the perpendicular component of the wave vector in the surroundings, resulting in less cross-talk. So, the coupling length of the waveguide with the strips at the wavelength of 10 μm increases up to 345 μm which is 25 times longer than that in its non-strip counterpart. Also, the figure-of-merit and loss of the designed structure are up to 1000 and 0.13 dB/μm at a chemical potential of 0.8 eV and a wavelength of 10 μm, respectively. So, high figure-of-merit and low loss along with long coupling length are the interesting features of the designed plasmonic waveguide which propose promising structures with high performance in the near-infrared.

Building nanoplatelet α-MoO3 films: A high quality crystal anisotropic 2D material for integration

The successful development of nanoplatelet α-MoO3 −films with wavelength-dependent in-plane and out-of-plane birefringence both in the visible and in the medium infrared is demonstrated. The films are prepared by a two-step process starting from structurally amorphous and continuous substoichiometric MoO3-X followed by isothermal annealing at low temperature (250 °C) to yield the formation of a dense network of large α-MoO3 2D nanoplatelets lying in-plane with no overlapping. These α-MoO3 crystals form a film with excellent thickness uniformity (20 nm) and are oriented with the [010] crystallographic direction parallel to the substrate normal. Finally, we report the film anisotropic optical complex refractive index, both parallel and perpendicular to the plane the full spectral range from 0.7 to 5 eV as determined by spectroscopic ellipsometry, and their characteristic in-plane phonon mode in the IR from FTIR measurements. These results show a promising pathway to the creation of highly functional anisotropic α-MoO3 2D films suitable for the development of integrated nanostructured photonic components.

Polaritonic states trapped by topological defects

The miniaturization of photonic technologies calls for a deliberate integration of diverse materials to enable novel functionalities in chip-scale devices. Topological photonic systems are a promising platform to couple structured light with solid-state matter excitations and establish robust forms of 1D polaritonic transport. Here, we demonstrate a mechanism to efficiently trap mid-IR structured phonon-polaritons in topological defects of a metasurface integrated with hexagonal boron nitride (hBN). These defects, created by stitching displaced domains of a Kekulé-patterned metasurface, sustain localized polaritonic modes that originate from coupling of electromagnetic fields with hBN lattice vibrations. These 0D higher-order topological modes, comprising phononic and photonic components with chiral polarization, are imaged in real- and Fourier-space. The results reveal a singular radiation leakage profile and selective excitation through spin-polarized edge waves at heterogeneous topological interfaces. This offers impactful opportunities to control light-matter waves in their dimensional hierarchy, paving the way for topological polariton shaping, ultrathin structured light sources, and thermal management at the nanoscale.

Ultra-short and highly efficient metamaterial Fresnel lens-assisted taper.

This paper demonstrates the benefits of leveraging free-space optics concepts in the design of certain integrated photonic components, leading to a footprint reduction without compromising on performance. Specifically, we present ultra-short, highly efficient and fabrication-friendly mode-size converters based on metamaterial Fresnel lens-assisted tapers. This is achieved using a parameterized inverse-design approach, where the metamaterial phase shifters are realized using fabrication-friendly Manhattan geometries, by optimizing the width, length, and position of the phase shifters. This approach overcomes the limitations of the conventional method that uses local periodic approximation, which is not suitable for lenses with a short focal length and high numerical aperture. We also extend the free-space concept of compound lenses and demonstrate a doublet-based taper to further reduce the footprint. The devices are fabricated and experimentally characterized in terms of insertion loss and signal integrity at high data transmission rates, exhibiting high performance. For the singlet, it effectively achieves mode-size conversion from 15 μm to 0.5 μm within a 15 μm distance, leading to ×10 length reduction compared to a linear taper. The insertion loss is under 1 dB over the entire C-band. The doublet achieves the same mode-size reduction within a 10 μm distance, leading to ×15 length reduction compared to a linear taper. The insertion loss is near 1 dB over most of the C-band. In both cases, the signal integrity is maintained for up to 50 Gbit/s.

Avoiding lateral mode leakage in thin film lithium niobate waveguides for the generation of spectrally pure photons at telecom wavelengths

Photonic integrated optical components, notably straight waveguides, serve as pivotal elements for on-chip generation and manipulation of quantum states of light. In this work, we focus on optimizing waveguides based on lithium niobate on insulator (LNOI) to generate photon pairs at telecom wavelengths using spontaneous parametric down-conversion (SPDC). Specifically, we investigate lateral leakage for all possible SPDC processes involving type 0, type I, and type II phase matching conditions in an X-cut lithium niobate waveguide and provide a recipe to avoid leakage loss for the interacting photons. Furthermore, focusing on type II phase matching, we engineer the waveguide in the single-mode regime such that it also satisfies group index matching for generating spectrally pure single photons with high purity (99.33%). We also address fabrication imperfections of the optimized design and find that the spectral purity of the generated photons is robust to fabrication errors. This work offers guidance for the suitable selection of morphological parameters to obtain lossless, single-mode LNOI waveguides for building linear optical circuits and photon pair generation at telecom wavelengths using desired phase-matching conditions.

Silicon Optrode with a Micromirror‐Tip Providing Tunable Beam Profile During Infrared Neuromodulation of the Rat Neocortex

AbstractInfrared (IR) neuromodulation holds an increasing potential in brain research, which is fueled by novel neuroengineering approaches facilitating the exploration of the biophysical mechanism in the microscale. The group lays down the fundamentals of spatially controlled optical manipulation of inherently temperature‐sensitive neuronal populations. The concept and in vivo validation of a multifunctional, optical stimulation microdevice is presented, which expands the capabilities of conventional optrodes by coupling IR light through a monolithically integrated parabolic micromirror. Heat distribution in the irradiated volume is experimentally analyzed, and the performance of the integrated electrophysiological recording components of the device is tested in the neocortex of anesthetized rodents. Evoked single‐cell responses upon IR irradiation through the novel microtool are evaluated in multiple trials. The safe operation of the implanted device is also presented using immunohistological methods. The results confirm that shift in temperature distribution in the vicinity of the optrode tip can be controlled by the integrated photonic components, and in parallel with the optical stimulation, the device is suitable to interrogate the evoked electrophysiological activity at the single neuron level. The customizable and scalable optrode system provides a new pathway to tailor the location of the heat maximum during infrared neural stimulation.

Flip-chip technology at room temperature: A new design of microtube-based interconnect for improved mechanical and electrical properties

Flip-chip assembly of photonic components can be achieved at room temperature by using 10 µm pitch interconnects made of metallised oxide microtubes inserted into ductile reception pads. In order to reduce the electrical resistance of interconnects and the assembly force required, interconnect design in regard to geometry and materials used are optimised through electrical and mechanical finite elements (FEM) simulations. To reduce electrical resistance, one may increase the metallisation thickness or microtube inner diameter. To minimise the assembly force, reducing the reception pad diameter is recommended. Experiments on silicon (Si) test vehicles are conducted to validate these predictions; they indicate that there is no short circuit, with an effectiveness of 100 %. This is achieved first through the assembly of Al-0.5 %wCu metallised oxide microtubes into Al-0.5 %wCu reception pads, using a force less than 10 mN/interconnect and proved to have a resistance of 230 mΩ. Second, with gold (Au) metallised oxide microtubes in indium (In) pads assembled with a force less than 0.7 mN/interconnect. Last interconnects have a resistance of 670 mΩ/interconnect and can still be reduced to 500 mΩ by 2 h annealing at 100 °C.

Photon and neutron dose evaluation at the Beam Test Facility of the INFN - National Laboratory of Frascati

Dose evaluation and direct measurements are fundamental for radiation protection in non-conventional accelerator facilities, both before and after the primary and secondary shielding. In this paper, we will report about the experimental setup, data acquisition and analysis, together with FLUKA modeling, of the dose measurements test carried out in the Beam Test Facility (BTF) of the INFN - Frascati’s National Laboratories (LNF), where an intense mixed field is produced and measured with thermoluminescent dosimeters. BTF is an extraction and transport line of DAΦNE LINAC (Buonomo et al. 2021; Mazzitelli et al. 2003). It is optimized for electrons and positrons production in a wide range of intensity, energy (30 MeV–800 MeV), beam spot dimensions and divergence, using both primary and secondary beam of the DAΦNE LINAC. Through the years, the BTF has gained an important role in particle detectors test and development with electron/positron beam. A small fraction of the BTF’s shifts have been dedicated to radiation damage test using LINAC electron primary beam up to 5×1010 e-/s. As radiation protection group of the LNF, we evaluated the dose when electrons impinging on a Pb target from: (i) photon Bremsstrahlung production; (ii) photoneutron production. Three dedicated tests with 503 MeV electrons impinging on a ∼16 cm thick Pb target have been carried out in February, June 2022 and in January 2023, using TLD700 and TLD600, measuring doses at several charge intervals. The aim of this study focuses on evaluating dosimetric quantities produced by the mixed field, air kerma for the photon component, and ambient dose equivalent for the neutron one, using thermoluminescence dosimeters calibrated with low-energy standards: Cs-137 and Am-Be. The approach adopted involves the use of Monte Carlo simulations of the experiment, both to benchmark against experimental measurements and to validate the results obtained for energies higher than those of calibration. The results of this comparison show excellent agreement between measured and simulated quantities in the forward direction, allowing us to conclude and confirm the validity of the calibrations themselves.

Ultrafast Terahertz Superconductor Van der Waals Metamaterial Photonic Switch

The high‐temperature layered superconductor (HTS) BSCCO is one of the key quantum material platforms in THz science and technology. Compact, stable, and reliable BSCCO THz photonic integrated circuit components can be developed to effectively and efficiently control and manipulate THz wave radiation, especially for future communication systems and network applications. Herein, the design, simulation, and modeling of ultrafast THz metamaterial photonic integrated circuits are reported on a few nanometer‐thick HTS BSCCO van der Waals (vdWs), capable of the active modulation of phase with constant transmission coefficient over a narrow‐frequency range. Meanwhile, the metamaterial circuit works as an amplitude modulator without significantly changing the phase in a different frequency band. Under the application of ultrashort optical pulses, the transient modulation dynamics of the THz metamaterial offer a fast‐switching timescale of 50 ps. The dynamics of picosecond light–matter interaction, Cooper pairs breaking, photoinduced quasiparticles generation and recombination, phonon bottleneck effect, and emission and relaxation of bosons in BSCCO vdW metamaterial arrays are discussed for the potential application of multifunctional superconducting photonic integrated circuits in communication and quantum technologies.

11‐3: Invited Paper: Advanced Micro LED Technologies for AR/MR Systems

A high quality micro LED array is essential for AR/MR systems. Either transparent or non‐transparent full‐color displays that are better than 3000 PPI require unique integration techniques that need to be optimized. The corresponding effects brought by these photonic components to the systems can be discussed in this talk.

Broadband near-infrared emission in silicon waveguides

Silicon photonic integrated circuit foundries enable wafer-level fabrication of entire electro-optic systems-on-a-chip for applications ranging from datacommunication to lidar to chemical sensing. However, silicon’s indirect bandgap has so far prevented its use as an on-chip optical source for these systems. Here, we describe a fullyintegrated broadband silicon waveguide light source fabricated in a state-of-the-art 300-mm foundry. A reverse-biased p-i-n diode in a silicon waveguide emits broadband near-infrared optical radiation directly into the waveguide mode, resulting in nanowatts of guided optical power from a few milliamps of electrical current. We develop a one-dimensional Planck radiation model for intraband emission from hot carriers to theoretically describe the emission. The brightness of this radiation is demonstrated by using it for broadband characterization of photonic components including Mach-Zehnder interferometers and lattice filters, and for waveguide infrared absorption spectroscopy of liquid-phase analytes. This broadband silicon-based source can be directly integrated with waveguides and photodetectors with no change to existing foundry processes and is expected to find immediate application in optical systems-on-a-chip for metrology, spectroscopy, and sensing.

Light-matter coupling and spin-orbit interaction of polariton modes in liquid crystal optical microcavities

In this theoretical study, we explore the dispersion and basic properties of optical microcavities filled with liquid crystal (LC) media that contain embedded quantum wells. As a result of the strong coupling between cavity photons and excitons, exciton polariton quasiparticles arise in these structures. LC-filled microcavities have an advantage of the ability to manipulate the spin (polarization) of the photonic component of the polariton states by controlling the orientation of LC molecules using an external electric field. This enables the engineering of controllable synthetic Hamiltonians for the polariton eigenmodes in microcavity structures. The introduction of synthetic spin-orbit interaction via placing of the quantum wells at particular positions in the LC-filled cavity enables control over the propagation of exciton polaritons, leading to various spatial effects. Through numerical calculations, we successfully reproduce the birefringence and phenomena exhibited by exciton polaritons propagating within the microcavity plane. We also examine the conditions required for strong coupling when utilizing perovskite layers as hosts for excitons. While the strong coupling regime can be also achieved in this material system, the manifestations of the synthetic spin-orbit interaction are suppressed owing to stronger disorder and nonradiative processes. Published by the American Physical Society 2024

Low-loss silicon waveguide and an ultrahigh-Q silicon microring resonator in the 2 µm wave band.

Silicon photonic-integrated circuits (PICs) operating in the 2 µm wave band are of great interest for spectroscopic sensing, nonlinear optics, and optical communication applications. However, the performance of silicon PICs in this wave band lags far behind the conventional optical communication band (1310/1550 nm). Here we report the realization of a low-loss waveguide and an ultrahigh-Q microring resonator in the 2 µm wave band on a standard 200 mm silicon photonic platform. The single-mode strip waveguide fabricated on a 220 nm-thick silicon device layer has a record-low propagation loss ∼0.2 dB/cm. Based on the low-loss waveguide, we demonstrate an ultrahigh-Q microring resonator with a measured loaded Q-factor as high as 1.1 × 106 and intrinsic Q-factor of 2 × 106, one order of magnitude higher than prior silicon resonators operating in the same wave band. The extinction ratio of the resonator is higher than 22 dB. These high-performance silicon photonic components pave the way for on-chip sensing applications and nonlinear optics in the 2 µm wave band.

On-chip guided wave THz photonic switching with a phase change material on a dielectric waveguide encompassed with a novel micro-fins heater

On-chip photonic components, particularly for switching applications, are becoming more and more in demand to create high-density photonic integrated circuits in the THz regime. The nonvolatile switching can meet the requirement of power saving when the complexity of integrated circuits grows in the near future. Here, we propose and analyse the THz wave switching using a nonvolatile phase change material (PCM) Ge2Sb2Te5 (GST) integrated on a broadband THz dielectric waveguide that is encompassed by a novel micro-fins heater. In the proposed device, a small patch of GST of length 1500μm integrated on top of the HRFZ-Si waveguide provides an acceptable insertion loss and high extinction ratio for its broadband operation in the frequency span of 0.5–1.0 THz. Using a novel micro-fins heater, the phase transformation of the GST is carried out through Joule heating. Short electrical pulses of 11 ms and 4μs are found to be capable of raising the temperature of the GST region above its crystallization and re-amorphization temperature, respectively. The corresponding energy consumption for crystallization and re-amorphization is found to be 61.73 mJ and 19.84 mJ, respectively. The switching speed of our reported device is 100 times better than the previously reported metamaterial-based THz photonic switches using PCMs. Since GST is nonvolatile in nature, no continuous pump power is needed to maintain the particular switching state of the proposed device. The work reported here is a step forward for enabling THz photonic switching, and further THz circuits, in guided wave photonic platform using CMOS-compatible materials.