Photon Detection Probability Research Articles

Design of an Electronic Interface for Single-Photon Avalanche Diodes.

Single-photon avalanche diodes (SPADs) belong to a family of avalanche photodiodes (APDs) with single-photon detection capability that operate above the breakdown voltage (i.e., Geiger mode). Design and technology constraints, such as dark current, photon detection probability, and power dissipation, impose inherent device limitations on avalanche photodiodes. Moreover, after the detection of a photon, SPADs require dead time for avalanche quenching and recharge before they can detect another photon. The reduction in dead time results in higher efficiency for photon detection in high-frequency applications. In this work, an electronic interface, based on the pole-zero compensation technique for reducing dead time, was investigated. A nanosecond pulse generator was designed and fabricated to generate pulses of comparable voltage to an avalanche transistor. The quenching time constant (τq) is not affected by the compensation capacitance variation, while an increase of about 30% in the τq is related to the properties of the specific op-amp used in the design. Conversely, the recovery time was observed to be strongly influenced by the compensation capacitance. Reductions in the recovery time, from 927.3 ns down to 57.6 ns and 9.8 ns, were observed when varying the compensation capacitance in the range of 5-0.1 pF. The experimental results from an SPAD combined with an electronic interface based on an avalanche transistor are in strong accordance, providing similar output pulses to those of an illuminated SPAD.

Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology

The integration of Single-Photon Avalanche Diodes (SPADs) in CMOS Fully Depleted Silicon-On-Insulator (FD-SOI) technology under a buried oxide (BOX) layer and a silicon film containing transistors makes it possible to realize a 3D SPAD at the chip level. In our study, a nanostructurated layer created by an optimized arrangement of Shallow Trench Isolation (STI) above the photosensitive zone generates constructive interferences and consequently an increase in the light sensitivity in the frontside illumination. A simulation methodology is presented that couples electrical and optical data in order to optimize the STI trenches (size and period) and to estimate the Photon Detection Probability (PDP) gain. Then, a test chip was designed, manufactured, and characterized, demonstrating the PDP improvement due to the STI nanostructuring while maintaining a comparable Dark Count Rate (DCR).

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

The effects of proton irradiation on CMOS Single-Photon Avalanche Diodes (SPADs) are investigated in this article. The I–V characteristics, dark count rate (DCR), and photon detection probability (PDP) of the CMOS SPADs were measured under 30 MeV and 52 MeV proton irradiations. Two types of SPAD, with and without shallow trench isolation (STI), were designed. According to the experimental results, the leakage current, breakdown voltage, and PDP did not change after irradiation at a DDD of 2.82 × 108 MeV/g, but the DCR increased significantly at five different higher voltages. The DCR increased by 506 cps at an excess voltage of 2 V and 10,846 cps at 10 V after 30 MeV proton irradiation. A γ irradiation was conducted with a TID of 10 krad (Si). The DCR after the γ irradiation increased from 256 cps to 336 cps at an excess voltage of 10 V. The comparison of the DCR after proton and γ-ray irradiation with two structures of SPAD indicates that the major increase in the DCR was due to the depletion region defects caused by proton displacement damage rather than the Si-SiO2 interface trap generated by ionization.

LinoSPAD2: an FPGA-based, hardware-reconfigurable 512×1 single-photon camera system.

We report on LinoSPAD2, a single-photon camera system, comprising a 512×1 single-photon avalanche diode (SPAD) front-end and one or two FPGA-based back-ends. Digital signals generated by the SPADs are processed by the FPGA in real time, whereas the FPGA offers full reconfigurability at a very high level of granularity both in time and space domains. The LinoSPAD2 camera system can process 512 SPADs simultaneously through 256 channels, duplicated on each FPGA-based back-end, with a bank of 64 time-to-digital converters (TDCs) operating at 133 MSa/s, whereas each TDC has a time resolution of 20 ps (LSB). To the best of our knowledge, LinoSPAD2 is the first fully reconfigurable SPAD camera system of large format. The SPAD front-end features a pitch of 26.2 μm, a native fill factor of 25.1%, and a microlens array achieving 2.3× concentration factor. At room temperature, the median dark count rate (DCR) is 80 cps at 7 V excess bias, the peak photon detection probability (PDP) is 53% at 520 nm wavelength, and the single-photon timing resolution (SPTR) is 50 ps FWHM. The instrument response function (IRF) is around 100 ps FWHM at system level. The LinoSPAD2 camera system is suitable for numerous applications, including LiDAR imaging, heralded spectroscopy, compressive Raman sensing, and other computational imaging techniques.

Multi-Channel Gating Chip in 0.18 µm High-Voltage CMOS for Quantum Applications.

A gating circuit for a photonic quantum simulator is introduced. The gating circuit uses a large excess bias voltage of up to 9.9 V and an integrated single-photon avalanche diode (SPAD). Nine channels are monolithically implemented in an application-specific integrated circuit (ASIC) including nine SPADs using 0.18 µm high-voltage CMOS technology. The gating circuit achieves rise and fall times of 480 ps and 280 ps, respectively, and a minimum full-width-at-half-maximum pulse width of 1.26 ns. Thanks to a fast and sensitive comparator, a detection threshold for avalanche events of less than 100 mV is possible. The power consumption of all nine channels is about 250 mW in total. This gating chip is used to characterize the integrated SPADs. A photon detection probability of around 50% at 9.9 V excess bias and for a wavelength of 635 nm is found.

Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

The influence of the virtual guard ring width (GRW) on the performance of the p-well/deep n-well single-photon avalanche diode (SPAD) in a 180 nm standard CMOS process was investigated. TCAD simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1 μm. It is experimentally found that, compared with an SPAD with GRW = 2 μm, the dark count rate (DCR) and afterpulsing probability (AP) of the SPAD with GRW = 1 μm is significantly increased by 2.7 times and twofold, respectively, meanwhile, its photon detection probability (PDP) is saturated and hard to be promoted at over 2 V excess bias voltage. Although the fill factor (FF) can be enlarged by reducing GRW, the dark noise of devices is negatively affected due to the enhanced trap-assisted tunneling (TAT) effect in the 1 μm guard ring region. By comparison, the SPAD with GRW = 2 μm can achieve a better trade-off between the FF and noise performance. Our study provides a design guideline for guard rings to realize a low-noise SPAD for large-array applications.

Mixed simulation and verification of photon detection probability for single photon avalanche diode

Owing to the complex and expensive process of complementary metal oxide semiconductor (CMOS), it is time-consuming and laborious to improve the photon detection probability (PDP) of Single photon avalanche diodes (SPAD) by tape-out. Therefore, we need to optimize PDP according to simulations. In this paper, we proposed a mixed simulation method to simulate PDP curve. The method includes numerical simulation in Matlab and technology computer-aided design (TCAD) simulation in Silvaco. The former is used for electrical parameters simulations. Optical parameters are simulated by TCAD simulation. The above parameters are substituted into the PDP model to obtain the functional relationship between photon detection probability and wavelength. In the simulation and measurement curves, the peak positions are 560 nm and 520 nm, respectively. The corresponding amplitudes are 31.6% and 31.9%. In other words, final results show that the peak positions in the PDP curves of the simulation and measurement differ by only 40 nm. And the peak difference is only 0.3%. Consequently, the validity of the PDP model is verified.

Performance of Active-Quenching SPAD Array Based on the Tri-State Gates of FPGA and Packaged with Bare Chip Stacking.

The performance of an active-quenching single-photon avalanche diode (SPAD) array that is based on the tri-state gates of a field programmable gate array (FPGA) is presented. The array is implemented by stacking a bare 4 × 4 N-on-P SPAD array on a bare FPGA die, and the electrodes of the SPAD pixels and the I/O ports of the FPGA are connected through wire bonding within the same package. The active quenching action on each SPAD pixel is performed by using the properties of the tri-state gates of the FPGA. Digital signal processing, such as pulse counters, data encoders, and command interactions, is also performed by using the same FPGA. The breakdown voltage of the SPAD pixels, with an active area of 60 μm × 60 μm, is 47.2-48.0 V. When the device is reverse biased at a voltage of ~50.4 V, a response delay of ~50 ns, a dead time of 157 ns, a dark count rate of 2.44 kHz, and an afterpulsing probability of 6.9% are obtained. Its peak photon detection probability (PDP) reaches 17.0% at a peak wavelength of 760 nm and remains above 10% at 900 nm. This hybrid integrated SPAD array is reconfigurable and cost effective.

Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage.

This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOS-DMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well available in BCD is utilized to implement the avalanche multiplication region. The resulting SPAD has a breakdown voltage of 18.4 V while achieving an excellent dark count rate of 4.4 cps/µm2 at the excess bias voltage of 7 V in spite of the advanced technology node. At the same time, the device achieves a high peak photon detection probability (PDP) of 70.1% at 450 nm thanks to the high and uniform E-field. Its PDP values at 850 and 940 nm, wavelengths of interest for 3D ranging applications reach 7.2 and 3.1%, respectively, with the use of deep N-well. The timing jitter of the SPAD, full width at half maximum (FWHM), is 91 ps at 850 nm. It is expected that the presented SPAD enables cost-effective time-of-flight and LiDAR sensors with the advanced standard technology for many mobile applications.

Modeling for Single-Photon Avalanche Diodes: State-of-the-Art and Research Challenges.

With the growing importance of single-photon-counting (SPC) techniques, researchers are now designing high-performance systems based on single-photon avalanche diodes (SPADs). SPADs with high performances and low cost allow the popularity of SPC-based systems for medical and industrial applications. However, few efforts were put into the design optimization of SPADs due to limited calibrated models of the SPAD itself and its related circuits. This paper provides a perspective on improving SPAD-based system design by reviewing the development of SPAD models. First, important SPAD principles such as photon detection probability (PDP), dark count rate (DCR), afterpulsing probability (AP), and timing jitter (TJ) are discussed. Then a comprehensive discussion of various SPAD models focusing on each of the parameters is provided. Finally, important research challenges regarding the development of more advanced SPAD models are summarized, followed by the outlook for the future development of SPAD models and emerging SPAD modeling methods.

Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency

We have proposed a structure design of single-photon avalanche diode fabricated in the Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) 0.18- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> high-voltage (HV) CMOS technology, which improves the limited operating excess voltage for an n-on-p design without any other customized well layer. With the introduction of a deep p-well isolation (ISO) layer, the excess bias is significantly elevated, so that the device exhibits high photon detection probability (PDP) with relatively low dark count rate. The n-on-p-type device is favorable for 3-D-stacked backside illuminated structure and can attain high PDP at longer wavelength. With the improved jitter and after-pulsing probability, our designed device can be suitable for the application of light detection and ranging (LiDAR).

Accurate Prediction of Photon Detection Probability Based on the 2-D Dead-Space Model for SPADs

In this article, we propose an accurate procedure for predicting the photon detection probability (PDP) for single-photon avalanche diodes (SPADs). The energy threshold needed for triggering impact ionization, that is, the dead space, was carefully considered and developed into a 2-D solution. The input parameters are based on the manufacturing process and device layout. The breakdown probability of each point on the 2-D profile was calculated without adding fitting parameters, which can overcome the inaccurate prediction caused by the uneven distribution of the electric field and photon generation for the device with the guard ring. Two sets of SPADs based on 180 nm for front-side illumination and 55 nm for back-side illumination were fabricated and tested. The simulation and experimental results are in accordance with each other. This procedure makes it very easy to optimize the device structure based on the simulation results. In addition, the invention can invoke graphics processing units (GPUs) in the MATLAB platform to perform parallel acceleration calculations and improve the calculation efficiency.

Comparative evaluation of background-rejection techniques for SPAD-based LiDAR systems

This paper presents the analysis and comparative evaluation of three background-rejection techniques implemented in CMOS processes for Single Photon Avalanche Diode (SPAD)-based Light Detection and Ranging (LiDAR) systems, using both Monte Carlo simulations and laboratory measurements. The first technique, known as photon coincidence technique, uses the temporal proximity of multiple detections to reject background light and maximize the detection of photons belonging to the reflected laser pulse. With the second technique, named Auto-Sensitivity (AS) technique, background light is rejected by automatically reducing the SPAD photon-detection probability (PDP), in order to avoid sensor saturation due to the intense environment illumination. The third technique we consider is the last-hit detection, which is able to detect and timestamp the last event impinging on the sensor over the acquisition window rather than the first, maximizing the system performance for long distance targets. The photon coincidence technique and AS technique are first compared to each other, showing the photon coincidence technique to outperform the AS technique. Then, the two techniques are applied together, resulting in an increase of the measurement range. Furthermore, a detailed analysis considering three different implementations of the photon coincidence technique is presented, showing pros and cons of each implementation and how the performance is affected. The last set of results focuses on the last-hit detection, which is compared against the standard detection paradigm (first-hit), showing not only an improvement for long distance targets (as expected), but an overall increase in system performance in terms of both success rate and SNR.

KNN Based Denoising Algorithm for Photon-Counting LiDAR: Numerical Simulation and Parameter Optimization Design

Photon-counting LiDAR can obtain long-distance, high-precision target3D geographic information, but extracting high-precision signal photons from background noise photons is the key premise of photon-counting LiDAR data processing and application. This study proposes an adaptive noise filtering algorithm that adjusts parameters according to the background photon count rate and removes noise photons based on the local mean Euclidean distance. A simulated photon library that provides different background photon count rates and detection probabilities was constructed. It was then used to fit the distribution relationship between the background photon count rate and the average KNN (K-Nearest Neighbor) distance (k = 2–6) and to obtain the optimal denoising threshold under different background photon count rates. Finally, the proposed method was evaluated by comparing it with the modified density-based spatial clustering (mDBSCAN) and local distance-based statistical methods. The experimental results show that various methods are similar when the background noise rate is high. However, at most non-extreme background photon count rate levels, the F of this algorithm was maintained between 0.97–0.99, which is an improvement over other classical algorithms. The new strategy eliminated the artificial introduction of errors. Due to its low error rates, the proposed method can be widely applied in photon-counting LiDAR signal extraction under various conditions.

Compression of the Synchrotron Mössbauer X-ray Photon Waveform in an Oscillating Resonant Absorber

A technique to transform the waveform of a 14.4 keV photon (time dependence of the photon detection probability or, equivalently, the intensity of the single-photon wave packet) into a regular sequence of short, nearly bandwidth-limited pulses with a controlled number of pulses is proposed. It is based on coherent forward scattering of single X-ray photons from a synchrotron Mössbauer source (SMS) in an optically thick, vibrating, recoilless 57Fe resonant absorber. The possibility of compressing the waveform of an SMS photon into a single short bell-shaped pulse is predicted. The experiment is proposed for compressing a 100 ns duration 14.4 keV single-photon wave packet produced by SMS at the European Synchrotron Radiation Facility (ESRF) into a single bell-shaped pulse of less than 20 ns duration and more than twice the peak intensity. Such single-photon coherent pulses are promising for applications in the fast-developing field of X-ray quantum optics, including possible implementation of quantum memory.

Fast-Gated 16 × 16 SPAD Array With 16 on-Chip 6 ps Time-to-Digital Converters for Non-Line-of-Sight Imaging

We present the design and characterization of a fully-integrated array of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$16 \times 16$ </tex-math></inline-formula> Single-Photon Avalanche Diodes (SPADs) with fast-gating capabilities and 16 on-chip 6 ps time-to-digital converters, which has been embedded in a compact imaging module. Such sensor has been developed for Non-Line-Of-Sight imaging applications, which require: i) a narrow instrument response function, for a centimeteraccurate single-shot precision; ii) fast-gated SPADs, for time-filtering of directly reflected photons; iii) high photon detection probability, for acquiring faint signals undergoing multiple scattering events. Thanks to a novel multiple differential SPAD-SPAD sensing approach, SPAD detectors can be swiftly activated in less than 500 ps and the full-width at half maximum of the instrument response function is always less than 75 ps (60 ps on average). Temporal responses are consistently uniform throughout the gate window, showing just few picoseconds of time dispersion when 30 ns gate pulses are applied, while the differential non-linearity is as low as 250 fs. With a photon detection probability peak of 70% at 490 nm, a fill-factor of 9.6% and up to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.6 \cdot 10^{8}$ </tex-math></inline-formula> photon time-tagging measurements per second, such sensor fulfills the demand for fully-integrated imaging solutions optimized for non-line-of-sight imaging applications, enabling to cut exposure times while also optimizing size, weight, power and cost, thus paving the way for further scaled architectures.

A High-Detection-Efficiency Optoelectronic Device for Trace Cadmium Detection.

Cadmium (Cd) pollution in soil is a serious threat to food security and human health, while, currently, the most widely used detection methods cannot accurately reflect the content of heavy metals in soil. Soil heavy metal detection combined with microelectronic sensors has become an important means of environmental heavy metal pollution prevention and control. X-ray Fluorescence spectrometry (XRF) can capture the excitation spectrum of metal elements, which is often used to detect Cd (II). However, due to the lack of high-performance optoelectronic devices, the analysis accuracy of the system cannot meet the requirements. Therefore, this study proposes a high-detection-efficiency photodiode (HDEPD) which can effectively improve the detection accuracy of the analyzer. The HDEPD is manufactured based on a 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. The volt-ampere curve, spectral response and noise characteristics of the device are obtained by constructing a test circuit combined with a spectral detection system. The test results show that the threshold voltage of HDEPD is 12.15 V. When the excess bias voltage increases from 1 V to 3 V, the spectral response peak of the device appears at 500 nm, and the photon detection probability (PDP) increases from 41.7% to 52.8%. The dark count rate (DCR) is 31.9 Hz/μm2 at a 3 V excess bias voltage. Since the excitation spectrum peak of Cd (II) is between 500 nm and 600 nm, the wavelength response range of HDEPD fully meets the detection requirements of Cd (II).

Probability of Unrecognized LiDAR Interference for TCSPC LiDAR

A standard method for distance determination is light detection and ranging (LiDAR), which relies on the emission and detection of reflected laser pulses. When LiDAR systems become common for every vehicle, many simultaneous laser signals will produce mutual LiDAR interference between LiDAR systems. In this paper, we analyze the possibility to recognize mutual interference in time-correlated single photon counting (TCSPC) LiDAR with particular focus on flash systems. We evaluate the LiDAR interference appearance by deriving the expected event distribution for ego and aggressor signal. From that, we calculate the probability of photon detection within each measured signal. This paper shows the high potential of different pulse repetition frequencies to reduce LiDAR interference. Using signal-to-noise ratio (SNR), we define the extinction distance, beyond which the aggressor signal completely extinguishes the ego signal. Applied on different background and laser event rates, we find the connection between ideal LiDAR system designs and lowest probability for unrecognized LiDAR interference. Furthermore, we show the relationship to a specific LiDAR design, which must fulfill eye safety condition and receives lower intensities with increasing target distances. Finally, we present different solutions for the recognition and reduction of LiDAR interference based on our previous results.

A Multi-Time-Gated SPAD Array with Integrated Coarse TDCs

Time-gating of single-photon avalanche diodes (SPADs) was commonly used as a method to reduce dark noise in biomedical imaging applications where photon events are correlated with a reference clock. Time-gating was also used to obtain timing information of photon events by shifting the gate windows applied to a SPAD array. However, in this approach, fine timing resolution comes at the cost of a lengthened measurement time due to the large number of counts required for each shift. As a solution, we present a multi-time-gated SPAD array that simultaneously applies shifted gate windows to an array of SPADs, which has the potential to reduce the measurement time compared to a single time gate window. Compared to similar works, this design has fully integrated the multi-gate generation using shared circuitry which also functions as a coarse time-to-digital converter. The proposed array, fabricated in the TSMC 65 nm standard CMOS process, achieved a median dark count rate (DCR) of 37 kHz, 4.37 ns gate widths, 550 ps timing resolution, and a peak photon detection probability (PDP) of 42.9% at 420 nm, all at a 0.8 V excess bias.

A new guard ring for ionizing radiation tolerance enhancement in single-photon avalanche diodes

A new guard ring is studied to improve radiation tolerance of single-photon avalanche diodes (SPAD) designed in 180 nm high voltage Complementary Metal-Oxide-Semiconductor (CMOS) technology. The radiation tolerance enhancement is obtained due to the reduction of the electric field inside Shallow Trench Isolation (STI), which reduces radiation-induced positive oxide charge density inside the STI by almost one order of magnitude. TCAD simulations show that, after 1 Mrad (SiO2) of X-ray radiation with a cathode voltage of 24.4 V, the increase in dark count rate at room temperature compared to pre-irradiation is 1438 counts per second (cps) and 311 cps for the conventional structure and new structure respectively, which shows a 78.3 % decrease in DCR increment for the new structure as compared to the conventional one. Moreover, the fill factor and photon detection probability of the new structure decreases by 0.3 % and 6 % compared to the conventional structure, which is negligible.