Mixed simulation and verification of photon detection probability for single photon avalanche diode

Abstract

Owing to the complex and expensive process of complementary metal oxide semiconductor (CMOS), it is time-consuming and laborious to improve the photon detection probability (PDP) of Single photon avalanche diodes (SPAD) by tape-out. Therefore, we need to optimize PDP according to simulations. In this paper, we proposed a mixed simulation method to simulate PDP curve. The method includes numerical simulation in Matlab and technology computer-aided design (TCAD) simulation in Silvaco. The former is used for electrical parameters simulations. Optical parameters are simulated by TCAD simulation. The above parameters are substituted into the PDP model to obtain the functional relationship between photon detection probability and wavelength. In the simulation and measurement curves, the peak positions are 560 nm and 520 nm, respectively. The corresponding amplitudes are 31.6% and 31.9%. In other words, final results show that the peak positions in the PDP curves of the simulation and measurement differ by only 40 nm. And the peak difference is only 0.3%. Consequently, the validity of the PDP model is verified.