Photoluminescence Decay Research Articles

Emission colour tuning in KLnF4:Yb3+,Er3+/Ho3+ phosphor

KLnF4:Yb3+,Er3+/Ho3+ (Ln = Y, Yb, Gd) phosphors were prepared by solid-state reaction technique. For each of the Yb3+/Er3+ and Yb3+/Ho3+ co-doped phosphors independently, phase confirmation and morphological examination were accomplished using the X-ray diffraction technique and scanning electron microscope analysis. X-ray photoelectron spectroscopy analysis shows the charge state and existence of lanthanides and dopants. Upconversion luminescence emissions of green and red colour were detected for the synthesized phosphors. The changes in the upconverted emission intensities and colour output pertaining to the change of the lanthanide host matrix along with dopants were investigated for the prepared phosphors. In the upconversion luminescence, erbium-doped samples exhibit a predominance of red emission while holmium-doped samples display a prevalence of green emission. The rare-earth Er/Ho doped KYbF4 shows strong red emission compared to other hosts. KYF4:Yb,Er/Ho exhibits relatively significant green upconversion emissions, while Yb,Er-doped KGdF4 host displays a 10-fold increase in green/red emission ratio with an increase in the input power of 20–780 mW. Downshifting photoluminescence studies and decay curve analysis were carried out using UV light excitation for the developed phosphors. A higher lifetime of 2.2 ms was measured for the downshifting red emission in the Ho doped KYbF4 sample. This study suggests a potential for colour tunability in the upconversion and downshifting emissions through host modifications to the fluoride phosphor.

Trioctylphosphine- and Octanethiol-Induced Photoluminescence Recovery of CdSe/ZnS Quantum Dots after Dilution–Quenching: Implications for Quantum Dot Films

In this work, CdSe/ZnS core/shell quantum dots (QDs) were synthesized. Dilution of the as-synthesized QDs would lead to instability with photoluminescence (PL) quenching. It was found that the addition of tertiary phosphine and alkylthiol could recover the PL intensity of diluted QDs and make these QDs stable. Specifically, the recovery efficiency of tertiary phosphine was stronger than that of alkylthiol. Trioctylphosphine (TOP) and octanethiol (OT) were chosen as the representative ligands, respectively. Isothermal titration calorimetry (ITC) demonstrated that interactions between both TOP/OT and QDs were exothermic and spontaneous. The interaction between TOP and QDs was mainly driven by van der Waals forces due to the branched structure. This interaction had a negative entropy change, while the interaction between OT and QDs had a positive entropy change. There were about ∼12 TOP molecules and ∼17 OT molecules bound to a QD particle. The binding constants of TOP/OT to QDs were 1.6 × 103 and 12.8 × 103 M–1, respectively. The reaction rate between TOP and QDs was fast, and the addition of OT could slow the reaction rate constant from 0.081 to 0.024 min–1. PL decay indicated that TOP and OT could increase the radiative recombination of excitons. Furthermore, both TOP and OT could greatly improve the brightness of the QD films, which was a prerequisite for the efficient improvement of quantum dot light-emitting diodes. This work explicitly investigated the dilution process of QDs, explored the methods for keeping diluted QDs stable and bright, and highlighted the importance of surface ligands.

Strong red emission in double perovskite Sr3LiSbO6: Eu3+ phosphor with high color purity for solid-state lighting applications

Intense red-emitting double perovskite Sr3LiSbO6 (SLSO) phosphor materials have been prepared by doping of Eu3+ rare earth ion using the facile solid-state reaction route. The obtained results displayed the hexagonal structure of the sample, having space group R3c. Diffuse reflectance spectra also reflected the 3.42eV optical band gap of SLSO: 2%Eu3+ which was less than that of the pure SLSO (3.5eV), consequently showing the negative Burstein Moss effect. Photoluminescence (PL) emission spectra showed a concentration quenching effect beyond the 2mol% of Eu3+ doping concentration, indicating the involvement of dipole-dipole interaction. The lifetime of the prepared phosphor was estimated by the PL decay curve; with an average decay time of 808.6 μs. Photometric studies revealed the required lesser correlated color temperature (CCT) values (<1900K) with high color purity (CP) of 99% and Commission International de’Eclairage (CIE) coordinates were located around the red region. Drawn results demonstrated that the proposed phosphor could be a promising strong red-emitting phosphor for the white light-emitting diode (wLED) based on ultra-violet UV or blue chip.

Ce[formula omitted][formula omitted] Cr3＋ energy transfer in Y[formula omitted]Al[formula omitted]MgSiO12 garnet host and application in horticultural lighting

In this study, the photoluminescence properties of Y3Al3MgSiO12:Cr3＋ (YMASG:Cr3＋) and Y3Al3MgSiO12: 2%Ce3+, Cr3＋ (YMASG:2%Ce3+, Cr3＋) were investigated, and the energy transfer from Ce3+ to Cr3＋ were examined. All phosphor samples were prepared by the aqueous sol–gel method. The phase purity and surface morphology of the obtained sample was evaluated using powder X-ray diffraction (XRD) and scanning electron microscopy (SEM). To determine the photoluminescence (PL) properties of YMASG:Cr3＋ and YMASG:2%Ce3+, Cr3＋, emission and excitation spectra along with reflection spectra were recorded. PL decay measurements were also performed, and PL lifetime values were determined. It was found that Ce3+ → Cr3＋ energy transfer efficiency increases with increasing Cr3＋ concentration. To investigate the temperature-dependent emission of YMASG:Cr3＋ and YMASG:2%Ce3+, Cr3＋, PL emission, and PL decay measurements were conducted in a temperature range from 77 to 500 K. Temperature-dependent PL decay measurements also revealed that the Cr3＋ ions mainly cause thermal quenching of YMASG:2%Cfe3+, 1%Cr3＋ emission. To check the suitability of synthesized materials to be applied for greenhouse illumination, two pcLEDs containing YMASG:Cr3＋ and YMASG:Ce3+, Cr3＋ phosphors were constructed. PcLED prototypes applicability for efficient horticulture lighting was also investigated within this study.

Photoluminescence and lifetime studies of C-dot decorated CdS/ZnFe2O4 composite designed for photoelectrochemical applications

Cadmium sulphide (CdS) is a well-known material for photoelectrochemical water splitting as a photoanode. The valence and conduction band edges are well suited for both hydrogen and oxygen evolution reactions. However, a major drawback in the case of cadmium sulphide is its photocorrosion. In this regard, formation of a Type II heterostructure helps in well separation of the photogenerated charge carriers and reduces photocorrosion. Herein, we have incorporated a carbon dot layer (high conductivity) in between a CdS/ZnFe2O4 Type II composite heterostructure to further enhance the photoelectrochemical performance of the material. Steady state photoluminescence (PL) study revealed that maximum PL intensity is observed in the case of bare CdS while minimum intensity in the case of ternary composite after the incorporation of carbon dots. The inflation of PL intensity revealed the overall increase in the conductivity and enhanced charge separation at the interface after composite formation. The time-resolved photoluminescence (TRPL) decay dynamics have also been studied. The lifetime of the charge carriers for the ternary composite was found to be 2.41 ns, which is much higher than the bare (0.78 ns) and binary composite (0.85 ns), indicating the improved charge separation and the stability after composite formation (CdS/C-dot/ZnFe2O4). This further aids in the enhancement of photocurrent generation. The photocurrent density is enhanced by approximately 50 times compared to the bare material (CdS) and 5 times compared to the binary composite (CdS/ZnFe2O4).

Photon color conversion enhancement of colloidal quantum dots inserted into a subsurface laterally-extended GaN nano-porous structure in an InGaN/GaN quantum-well template.

To improve the color conversion performance, we study the nanoscale-cavity effects on the emission efficiency of a colloidal quantum dot (QD) and the Förster resonance energy transfer (FRET) from quantum well (QW) into QD in a GaN porous structure (PS). For this study, we insert green-emitting QD (GQD) and red-emitting QD (RQD) into the fabricated PSs in a GaN template and a blue-emitting QW template, and investigate the behaviors of the photoluminescence (PL) decay times and the intensity ratios of blue, green, and red lights. In the PS samples fabricated on the GaN template, we observe the efficiency enhancements of QD emission and the FRET from GQD into RQD, when compared with the samples of surface QDs, which is attributed to the nanoscale-cavity effect. In the PS samples fabricated on the QW template, the FRET from QW into QD is also enhanced. The enhanced FRET and QD emission efficiencies in a PS result in an improved color conversion performance. Because of the anisotropic PS in the sample surface plane, the polarization dependencies of QD emission and FRET are observed.

Down-shifting photoluminescent properties of Tb3+ doped phosphate glasses for intense green-emitting devices applications

Tb3+ doped BZLP glasses were prepared via a melt-quenching route and investigated thoroughly using spectroscopic techniques such as XRD, UV-VIS absorption and photoluminescence (PL) to explore their utility in visible photonic device applications. The information pertaining to glass transition temperature, melting temperature, and thermal stability were understood by using recording the differential scanning calorimetry (DSC) spectrum for an undoped BZLP glass. The total weight loss during the glass composition melting process was analyzed using Thermogravimetric curves. The UV spectral information recorded for the titled glasses reveals the optical bandgap falling in the range from 4.57 to 4.19 eV. The prepared Tb3+ doped BZLP glasses exhibit intense green emission along with relatively less intense blue, yellow, and red peaks under 373 nm excitation. In the resultant PL spectra, the emission intensity increases with the activator concentration of Tb3+ ions from 0.5 to 5.0 mol%. The estimated CIE chromaticity coordinates falling in the green region reveal the aptness of the titled glasses as a green constituent in visible photonic devices. The PL decay curves show the bi-exponential behavior with an average decay time of 2–3 ms. The temperature-dependent PL profile shows fewer changes in spectra and has a relatively high activation energy value, confirming the high thermal stability. Various results obtained for Tb3+ doped BZLP glasses finally reveal their usage as a green emitter needed to fabricate w-LEDs and other green-emitting photonic device applications.

Photoluminescence lifetime in porous silicon

Lifetime of photoluminescence emitted by porous silicon has been investigated by using pulsed nitrogen laser as excitation source. This research also involved sample preparation. This in itself necessitated software and hardware development to enable interfacing and data logging using PC. &#x0D; Orange and orange/red photoluminescence emitted from porous silicon samples have been studied at temperatures (77 - 295) K. The photoluminescence decay was intrinsically nonexponential at different temperatures. The photoluminescence lifetime, defined as 1/e times the initial intensity, decreased as emission energy increased, and increased with decreasing temperature. The time evolution of photoluminescence lifetimes and for orange porous silicon sample has been investigated.

An aqueous solution of fluorescent MoS2 quantum dots toward a sensitive and selective probe for Fe3+: A tri-mode spectroscopic sensing technique

In this work, MoS2 quantum dots (MSQDs) of average size ∼3.0 ± 1.2 nm in aqueous medium were synthesized by simple technique. Three different emissive sites of MSQDs were observed from the time-resolved photoluminescence decay curves with an average lifetime of 3.75 ± 0.40 ns. The high fluorescence quenching ability toward heavy metal ions of synthesized MSQDs was used for Fe3+ ion sensing, and sensitivity was 7.9 × 10−4 μM−1. The limits of detection and quantification were ∼0.24 and ∼0.71 μM, respectively. The zeta potential (ζ) of bare MSQD was −28.0 mV and was more positive in the presence of Fe3+ compared to other metal ions. It is observed that the value of ζ became more positive with increasing Fe3+ ion concentrations. Hence, tri-mode sensing techniques were used for sensing different metal ions and showed excellent selectivity toward Fe3+ ions.

Influence of Gd3+ on structural and luminescence properties of new Eu3+-doped borate glass for photonics material

The Gd2O3–La2O3–ZnO–B2O3–Eu2O3 glasses with different Gd2O3 concentration (Gd:LaZnBEu) were studied in the physical, structural, optical and luminescence properties. The density and refractive index of glass increased with addition of Gd2O3 content. The FTIR spectra demonstrated the BO3 and BO4 borate complexes as the main construction in glass those were more disturbed by Gd2O3 increasing. The BO4/BO3 and bridging/non-bridging oxygen ratio, observed from XPS, changed by following the Gd2O3 concentration whose 10 mol% owned the highest values of both ratios. In the absorption spectra, glasses absorbed some photons in UV – NIR region. The excitation by O2−→Eu3+ charge transfer (240 nm), Gd3+→Eu3+ energy transfer (275 nm) and direct Eu3+ excitation (394 nm) caused the strongest Eu3+ photoluminescence at 613 nm (5D0→7F2). The glass with 5 mol%-Gd2O3, that possessed the optimum Eu3+ local site, exhibited the highest absorbance and photo-/radio-luminescence intensity. The CIE 1931 and UV lamp excitation revealed the strong reddish-orange emission of glasses. The photoluminescence decay time of Eu3+ in glasses were between 1.6 and 2.1 ms and decreased with added Gd2O3 amount. The Gd:LaZnBEu glasses have a potential for LED, laser, display, and X-ray detection devices with integration mode.

A phthalimide-based turn on fluorosensor for selective and rapid detection of G-series nerve agent’s mimics

Organophosphorus-based nerve agents are extremely toxic. Their use in terrorist attacks and wars has caused increased interest in developing simple, portable, displayable, and authentic methods for detecting these lethal substances. In this article, we have designed and synthesized a fluorosenor (HBAI) derived from 4-aminophthalimide moiety that exhibits high selectivity and sensitivity towards G-series nerve agent mimics in their solution and gas phases, respectively. HBAI shows significant fluorescence response to DCP and DCNP that induced noticeable bare eye color changes under a 365 nm UV light irradiation. The detection limit of HBAI for DCP and DCNP has been established in the order of 10-7 M and 10-6 M, respectively. The sensing mechanism for the probe HBAI has been elucidated by time-resolved photoluminescence decay analysis and 1H NMR titration experiment. The significant photoluminescence enhancement is mainly found for disrupting the excited state intramolecular proton transfer (ESIPT) mechanism because of the phosphorylation process. However, for the practical utility of HBAI, a test kit employing Whatman-41 filter paper has been fabricated as a portable and displayable photonic device for on-site detection of G-series nerve agents. Also, a dip-stick method has been demonstrated to identify the vapor of G-series nerve agents mimic.

Time-Resolved Photoluminescence in GeSn Film by New Infrared Streak Camera Attachment Based on a Broadband Light Upconversion

GeSn coatings on commercial Si substrates have gained increased interest for application in infrared detectors and lasers. The characterization of these materials is crucial for their quality assessment and in describing device performance for commercialization. The time-resolved photoluminescence is an efficient method for contactless, time-resolved characterization of GeSn optoelectronic properties. For this purpose, in this work, we developed an infrared streak camera attachment based on the broadband upconversion of infrared photoluminescence by using powerful nanosecond 1064 nm pulses. The attachment achieved picosecond time resolution, being limited by the laser pulse duration, jitter, and temporal resolution of the streak camera. The spectral range for time-resolved photoluminescence in the 1100–2400 nm interval was obtained, outperforming the range of commercial infrared InGaAs streak cameras. The developed setup was applied for excitation-dependent time-resolved photoluminescence decay measurements in a GeSn and compared to the conventional upconversion technique with the optically delayed picosecond gate pulses. The new setup provided 2D spectro-temporal images for analysis. The photoluminescence decay times in the 30–80 ps range were obtained in the GeSn layer depending on the excitation pulse energy and spectral emission wavelength. Carrier thermalization was observed as a redshift of the photoluminescence spectra with time.

Nonlinear optical absorption and two-photon luminescent properties of FAPbBr3 nanocrystals

Typical lead-based halide perovskite has been extensively explored as a light-harvesting and emission material for solar cell and light-emitting diodes in the past ten years. But it remains challenging to improve the optoelectronic characteristics and clarify the photophysical mechanism with the interaction of laser. Herein, the nonlinear optical absorption and two-photon luminescent properties of FAPbBr3 (FA=CH(NH2)2+) nanocrystals (NCs) are investigated by means of open-aperture Z-scan, steady-state/time-resolved photoluminescence (PL), and transient absorption (TA) techniques. When the laser excitation wavelength varies from 475 to 532 nm in open-aperture Z-scan measurement, strong saturated absorption can be found and its saturation intensity increases. Compared with normal luminescence, the PL emission peak has a red shift of 6 nm and increased PL lifetime under 800 nm femtosecond laser excitation, and the linewidth changes smaller considerably from 114 to 94 meV. This difference is mainly attributed to the different relaxation pathways. The TA spectra show the PL peak positions and full width at half maximum different features under 400 or 800 nm femtosecond excitation on the time scale. Due to different selection rules, the 400 or 800 nm femtosecond excitations can induce electrons populated different states and then relax to the same lowest excited state. Hence, we can estimate that different states induce the difference in steady-state PL, TRPL, and TA decays. These results may contribute to the application of perovskite NCs for multifunctional photonic sources and nanolaser devices under strong laser field.

The influence of a trap state on the photoluminescence decay times under single pulse excitation

We numerically calculated the time-resolved photoluminescence spectra using the bimolecular trapping-detrapping model. The variations of carrier lifetimes are investigated by changing the carrier recombination and trapping rate constants, as well as the concentration of available trapping states.

Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film.

Diamond thin films can be, at a relatively low-cost, prepared with a high-density of light-emitting negatively charged silicon vacancy (SiV) centers, which opens up the possibility of their application in photonics or sensing. The films are composed of diamond grains with both the SiV centers and sp2-carbon phase, the ratio of these two components being dependent on the preparation conditions. The grain surface and the sp2-related defects might act as traps for the carriers excited within the SiV centers, consequently decreasing their internal photoluminescence (PL) quantum efficiency. Here, we show that in a 300 nm thick polycrystalline diamond film on a quartz substrate, the SiV centers in the diamond grains possess similar temperature-dependent (13-300 K) PL decay dynamics as the SiV centers in monocrystalline diamond, which suggests that most of the SiV centers are not directly interconnected with the defects of the diamond thin films, i.e. that the carriers excited within the centers do not leak into the defects of the film. The activation energy ΔE = 54 meV and the attempt frequency α = 2.6 were extracted from the measured data. These values corresponded very well with the published values for SiV centers in monocrystalline diamond. We support this claim by measuring the transient absorption via a pump and probe technique, where we separated the nanosecond recombination dynamics of carriers in SiV centers from the picosecond decay dynamics of polycrystalline diamond defects. Our results show that PL emission properties of SiV centers in polycrystalline diamond thin films prepared via chemical vapor deposition are very similar to those in monocrystalline diamond thereby opening the door for their application in diamond photonics and sensing.

Large photoluminescence enhancement in the chlorophyll from the energy transfer in perovskite–chlorophyll hybrid derivatives

Determining the photophysical processes for biomaterial–semiconductor systems has been beneficial for developing optoelectronic devices that exhibit biodegradability and biocompatibility. Here, we systematically investigated the optical properties and photophysical mechanisms of CsPbBr3 nanoparticles (NPs)-incorporated chlorophyll material. Steady-state photoluminescence (PL) studies reveal a large fluorescence enhancement in the chlorophyll once the perovskite was incorporated in the pristine chlorophyll with an associated PL quenching of the CsPbBr3 emission. A spectral overlap was measured from the PL and absorption spectra of CsPbBr3 NPs and chlorophyll indicative of a Förster-type resonance energy transfer (FRET). Using time-resolved PL, faster PL decay curves were observed from the CsPbBr3 NPs in the mixture suggesting that most of its energy was transferred to the chlorophyll. The corresponding Jablonski diagram was built and the energy transfer parameters, such as FRET efficiencies and transfer rates, were calculated to fully explain the FRET process. Slow PL degradation for the mixtures was also observed, highlighting the advantage of the FRET proposed. The demonstration of the photophysical mechanism in biomaterial–semiconductor systems is influential in improving the performance of emerging bio-inspired optoelectronic devices.

Preparation, morphology and luminescence properties of micro-columnar structured Lu2O3:Eu films by LCVD method on quartz glass

Micron/sub-micron hard X-ray imaging is an important development direction of X-ray detection technology. Scintillation screens with excellent X-ray stopping power and high light output are desired to obtain good imaging quality. Europium-doped lutetium oxide (Lu2O3:Eu) film with micro-columnar structure is an ideal candidate for this application. In this study, micro-columnar structured Lu2O3:Eu films were prepared on quartz glass substrates by laser chemical vapor deposition (LCVD) method. The influences of preparation conditions on structure and morphology properties of films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Photoluminescence and scintillation properties of the films, including photoluminescence excitation (PLE), photoluminescence (PL), PL decay, X-ray excitation luminescence (XEL), and afterglow curves, were recorded. The relationships between structure, morphology, luminescence properties of films, and preparation conditions were investigated and discussed as well. The preparation conditions include laser power, oxygen flow rate, and precursor evaporation temperature. In addition, dual-layer Lu2O3:Eu film was prepared for the first time by just turning off the laser.

Mn4+ doped Mg2ScSbO6 deep-red-emitting double-perovskite phosphors for plant-cultivation

Non-rare earth Mn4+-doped oxide matrix phosphors are of increasing interest in the field of light-emitting diodes due to their good spectral properties. Herein, Mn4+-doped Mg2ScSbO6 phosphor was successfully synthesized via the conventional solid-state reaction method. The crystal structure of the sample was determined using a variety of characterization methods such as X-ray powder diffraction and Rietveld refinement analysis. The phosphor has a broadband absorption from near ultraviolet to blue light and emits deep red (∼682 nm) light of 2Eg → 4A2g transition. The photoluminescence intensity and decay lifetime of the Mn4+-doped Mg2ScSbO6 are observed to be strongly dependent on temperature, and the results of quenching analysis were reported. The optimal Mg2ScSbO6:Mn4+ phosphor has a high color purity of 99.4% with an internal quantum efficiency value of 61.93% modulated by charge compensation of Li+ ions. The photoluminescence peak position of the phosphor can be well matched with the absorption peak of red and far-red phytochrome. Therefore, the deep-red-emitting phosphors have tremendous application merits and potential markets in plant growth.

Crystal growth and scintillation characterizations of mixed halide scintillators K2LaBr5-xIx: Ce (x = 0, 1, 2)

The purpose of this research is to investigate the luminescence and scintillation properties of mixed halide scintillators K2LaBr5-xIx. The crystals of K2LaBr5-xIx:2% Ce (x = 0, 1, 2) have been synthesized by high-temperature solid-phase method and grown by vertical Bridgman method. The crystals are measured by X-ray induced luminescence spectra, optical transmittance photoluminescence spectrum, photoluminescence decay time, and pulse height spectrum. Under the UV and X-ray excitation, all of the crystal samples have typical Ce3+ double peaks corresponding to the energy level shifts of 5d1→2F5/2 and 5d1→2F7/2, with emission centers ranging from 350 to 400 nm. The photoluminescence decay time of the three crystals of K2LaBr5-xIx: Ce is about 20 ns. Under 662 keV γ-rays excitation from a 137Cs source, the energy resolution is 8.2%, 15% and 10% (FWHM), respectively.

Preparation and Photoluminescent Properties of Tb3+-Doped Lu2W3O12 and Lu2Mo3O12 Green Phosphors

Tungstate and molybdate phosphors have received great attention for their excellent photoluminescent properties and thermal stabilities. In the article, Tb3+-activated tungstate and molybdate green phosphors were prepared by a solid-state reaction method at different caline temperatures and were compared and studied. The crystal structures and the morphologies of samples were characterized by X-ray diffraction (XRD) patterns and field emission scanning electron microscopy (FE-SEM) images. The energy-dispersive spectra (EDS) proved the compositions of the prepared samples. The photoluminescence (PL) spectra showed that the PL excitation spectra of Tb3+-doped Lu2W3O12 and Lu2Mo3O12 green phosphors consisted of a broad and strong charge transfer band (CTB) and 4f–5d transitions of Tb3+ in the ultraviolet (UV) wavelength range and some narrowed excitation peaks from the 4f–4f transition of Tb3+ in the near ultraviolet (NUV) wavelength region. The PL emission spectra of the phosphors exhibited the characteristic green emissions owing to the 5D4→7F5 transition of Tb3+ located at about 547 nm. The values of energy gap Eg were calculated based on the diffuse reflection spectra (DRS). The measuring temperature-dependent PL spectra illustrated the thermal stabilities of phosphors. The Tb3+-doped Lu2Mo3O12 phosphor presented normal thermal quenching phenomena and the values of the thermal activation energy Ea were calculated based on the measuring temperature dependent PL emission spectra. The Tb3+-doped Lu2W3O12 phosphor exhibited abnormal thermal enhancing CTB excitation intensity at about 170 °C. Furthermore, the PL decay curves suggested that the lifetime corresponding to the 5D4 level of Tb3+ in the Lu2W3O12 host lattice was longer than that in the Lu2Mo3O12 host lattice. Compared the Tb3+-doped Lu2Mo3O12 phosphor, the Tb3+-doped Lu2W3O12 phosphor has shown potential as an application in temperature sensors.