Abstract
Lifetime of photoluminescence emitted by porous silicon has been investigated by using pulsed nitrogen laser as excitation source. This research also involved sample preparation. This in itself necessitated software and hardware development to enable interfacing and data logging using PC. 
 Orange and orange/red photoluminescence emitted from porous silicon samples have been studied at temperatures (77 - 295) K. The photoluminescence decay was intrinsically nonexponential at different temperatures. The photoluminescence lifetime, defined as 1/e times the initial intensity, decreased as emission energy increased, and increased with decreasing temperature. The time evolution of photoluminescence lifetimes and for orange porous silicon sample has been investigated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.