Photoelectric Applications Research Articles

First-principles screening of XSbF3 (X = Ba and Ra) fluoroperovskites: an insight into structural, optoelectronic and thermal properties

This work presents a computational study of the physical properties such as structural, electronic, optical and thermal properties of XSbF3 (X = Ba and Ra) fluoroperovskites. The calculations were performed using the density functional theory (DFT) calculations in conjunction with Quantum Espresso code. The stability of the crystal structure XSbF3 compounds is determined by binding energy (Eb) computations. The Eb values for BaSbF3 and RaSbF3 compounds are −19.25 and −20.04eV respectively, indicating that both studied compounds are stable. The optimized lattice constants for BaSbF3 and RaSbF3 compounds are 5.03 and 5.06 Å, respectively. The evaluation of electronic properties is conducted by electronic band structure, total density of states (DOS), and partial density of states (PDOS). It is observed from the PDOS plots that the p-states of Sb and F whereas the d-states of X atoms have the major contribution in the formation of the band structure. Various optical properties have been computed and compared. The static value of ε10 highlights the metallic nature of the studied compounds while RaSbF3 stands out for having the highest recorded value of ε20. The maximum nω values for BaSbF3 and RaSbF3 are 8.46 and 6.86 respectively indicating their potential for photoelectric applications. Furthermore when examining the properties it is evident that the BaSbF3 compound stands out as a material for energy storage because of its higher electron energy at 2.36 KJ/N.mol and lower electron free energy of −2.55 KJ/N.mol compared to the RaSbF3 compound. On the other hand, the RaSbF3 compound is an efficient material for catalysis due to its high ability to absorb heat energy from the external source, as compared to the BaSbF3 compound. This study is the first computational investigation of XSbF3 (X is Ba and Ra) compounds, which provides valuable insights into the physical properties of sb-based fluroperovskites and their potential applications.

Theoretical study on photoelectric properties of ferroelectric photovoltaic perovskite CsGeBr3 based on first-principle calculations

Ferroelectric photovoltaic materials have attracted great attention because of their unique photoelectric conversion mechanism, high photo-generated voltage, and adjustable polarization intensity. Traditional ferroelectric oxide perovskites such as BaTiO3, BiFeO3, and Pb(ZrTi)O3 have attracted much attention but they are not suitable as light absorbing layers in solar cells, due to the large optical bandgap, low light absorption rate, and small photogenerated current. Therefore, it is necessary to seek prominent materials with both ferroelectric and suitable band gaps. Recently, the evidence of ferroelectricity in the typical three-dimensional all-inorganic halide perovskites CsGeX3, with band gaps of 1.6 eV to 2.3 eV has been confirmed. However, the spontaneous polarization of ferroelectric perovskite CsGeX3 is ∼10 to 20 μc cm−2 which is weaker than that of ABO3 (∼26 to 75 μc cm−2). Strain engineering has a significant influence on the properties of semiconductor materials by controlling the lattice scaling and the internal atomic spacing. Hence, in this work, strain engineering is introduced to adjust the ferroelectric polarization and the photoelectric properties of ferroelectric perovskite CsGeBr3. The calculated results show that when the applied compressive strain increases from 0% to −4%, the spontaneous polarization of ferroelectric perovskite CsGeBr3 increases from 14.23 μc cm−2 to 51.61 μc cm−2, and the band gap reduces from 2.3631 eV to 1.5310 eV. The effective mass of electrons and holes gradually reduces, exciton binding energies decrease from 48 meV to 5 meV, and the optical absorption coefficient is strongly enhanced from 3 × 105 cm−1 to 5 × 105 cm−1 in the visible range. Besides, the power conversion efficiency(PCE) of CsGeBr3 is significantly increased from 16.95% to 26.77%. Therefore, the results indicate that the application of compressive strain can increase the ferroelectric polarization and enhance the original photovoltaic performance of ferroelectric perovskite CsGeBr3. Our theoretical calculations can provide useful insights and beneficial guidance into experimental studies of ferroelectric perovskites in photoelectric applications.

Tunable multicolor-emission in Eu3+ and Tb3+ codoped Cs2NaInCl6:Sb3+ double perovskite nanocrystals and its dual-model anti-counterfeiting and temperature-sensing applications

Lead-free metal halide double perovskites with non-toxicity and stable self-trapped excitons (STEs) have received considerable attention in the field of photoelectric applications. However, it is difficult to achieve independent control of its photoluminescence performance to meet the requirements of multi-band emission. Herein, a doping strategy was employed to introduce lanthanide ions (Ln3+) into Cs2NaInCl6:Sb3+ nanocrystals (NCs), enabling the multicolor emission modulation ranging from blue to red and even white light. Benefiting from the efficient energy transfer from Sb-related self-trapped excitons to Ln3+ ions, green and red emissions originate from the 5D0→7FJ (J = 1, 2, 3, 4) transition of Eu3+ ions and 5D4-7FJ (J = 6, 5, 4, 3) transition of Tb3+ ions, respectively. According to the tunable polychromatic photoluminescence characteristics of doped NCs, the dual-mode fluorescent anti-counterfeiting applications were exhibited. Furthermore, the distinct temperature sensitivities exhibited by blue (453 nm) and red (617 nm) emission in Cs2NaInCl6:Sb3+/Eu3+ NCs provide the opportunity for the optical thermometry, which demonstrates the maximum absolute and relative sensitivity are 0.0018 and 0.43 % K−1, respectively. These results indicate that the synthesized codoped NCs have the potential applications in multifunctional fields, such as optical thermometer, fluorescence anti-counterfeiting, and multicolor-LEDs.

Optical properties of lead-free Cs3Bi2I9 nanowire arrays prepared by template

Bismuth-based (Bi) perovskites have garnered significant interest as alternatives to lead-based (Pb) perovskites in photoelectric applications due to their non-toxicity and diverse structural properties. However, the inherent high limitation of electrons presents a significant challenge to their further utilization in various applications. Herein, all-inorganic Cs3Bi2I9 nanowire arrays have been successfully prepared by AAO template combined with the two-step method of low-temperature solution. Compared to the Cs3Bi2I9 film, the Cs3Bi2I9 nanowire arrays obtained the higher photoluminescence intensity, indicating a strong interaction between Cs3Bi2I9 and AAO, resulting from the significant weakening of the high electron confinement in the valence band of Cs3Bi2I9, which presenting as the valence band of the Cs3Bi2I9-AAO is mainly contributed by the O 2p orbital, while the conduction band does not change significantly. In addition, the Cs3Bi2I9 nanowire arrays have been demonstrated with the enhanced environmental and thermal stability, which maintain 90 % of their initial photoluminescence intensity after 120 h (in a vacuum) heating at 80 °C or after 10 days in the air (relative humidity of 40 %).

Embedding Perovskite in Polymer Matrix Achieved Positive Temperature Response with Inversed Temperature Crystallization

Organic perovskites are promising semiconductor materials for advanced photoelectric applications. Their fluorescence typically shows a negative temperature coefficient due to bandgap change and structural instability. In this study, a novel perovskite‐based composite with positive sensitivity to temperature was designed and obtained based on its inverse temperature crystallization, demonstrating good flexibility and solution processability. The supercritical drying method was used to address the limitations of annealing drying in preparing high‐performance perovskite. Optimizing the precursor composition proved to be an effective approach for achieving high fluorescence and structural integrity in the perovskite material. This perovskite‐based composite exhibited a positive temperature sensitivity of 28.563% °C−1 for intensity change and excellent temperature cycling reversibility in the range of 25–40 °C in an ambient environment. This made it suitable for use as a smart window with rapid response. Furthermore, the perovskite composite was found to offer temperature‐sensing photoluminescence and flexible processability due to its components of perovskite‐based compounds and polyethylene oxide. The organic precursor solvent could be a promising candidate for use as ink to print or write on various substrates for optoelectronic devices responding to temperature.

Facile fabrication and tunable electronic properties of Azure A chloride/Si heterojunction for photoelectrical application

In this study, the fabrication, structural, and photoelectrical properties of AZACl on Si heterojunction (AZACl/Si HJ) were examined. The morphology of the thin film of AZACl was analyzed using SEM, while XRD studied the crystal structure. The UV spectrophotometer displayed three distinct absorption regions at 194, 260, and 605 nm due to their complex chemical structure. The electrical characteristics of the AZACl/Si HJ were investigated in dark circumstances at various temperatures. The J-V technique was used to derive the diode properties of AZACl/Si HJ. The photoelectric properties of the AZACl/Si HJ, such as photocurrent, sensitivity, and responsivity, were estimated. At - 0.5 V and light irradiance equals 100 mW/cm2, the calculated photocurrent equals 4.76 × 10−5 A/cm2, the sensitivity equals 20, and the responsivity equals 476 × 10−4. These results indicated that the fabricated AZACl/Si HJ exhibits photodiode characteristics.

Synthesis of Size-Adjustable CsPbBr3 Perovskite Quantum Dots for Potential Photoelectric Catalysis Applications.

As a direct band gap semiconductor, perovskite has the advantages of high carrier mobility, long charge diffusion distance, high defect tolerance and low-cost solution preparation technology. Compared with traditional metal halide perovskites, which regulate energy band and luminescence by changing halogen, perovskite quantum dots (QDs) have a surface effect and quantum confinement effect. Based on the LaMer nucleation growth theory, we have synthesized CsPbBr3 QDs with high dimensional homogeneity by creating an environment rich in Br- ions based on the general thermal injection method. Moreover, the size of the quantum dots can be adjusted by simply changing the reaction temperature and the concentration of Br- ions in the system, and the blue emission of strongly confined pure CsPbBr3 perovskite is realized. Finally, optical and electrochemical tests suggested that the synthesized quantum dots have the potential to be used in the field of photocatalysis.

Electro-Induced Phase Transformation of a Conductive Metal-Organic Framework Film for Nonlinear Optical Switching.

Achieving metal-organic frameworks (MOFs) with nonlinear optical (NLO) switching is profoundly important. Herein, the conductive MOFs Cu-TCNQ phase I (Ph-I) and phase II (Ph-II) films were prepared using the liquid-phase-epitaxial layer-by-layer spin-coating method and steam heating method, respectively. Electronic experiments showed that the Ph-II film could be changed into the Ph-I film under an applied electric field. The third-order NLO results revealed that the Ph-I film had a third-order nonlinear reverse saturation absorption (RSA) response and the Ph-II film displayed a third-order nonlinear saturation absorption (SA) response. With increases in the heating time and applied voltage, the third-order NLO response realized the reversible transition between SA and RSA. The theoretical calculations indicated that Ph-I possessed more interlayer charge transfer, resulting in a third-order nonlinear RSA response that was stronger than that of Ph-II. This work applies phase-transformed MOFs to third-order NLO switching and provides new insights into the nonlinear photoelectric applications of MOFs.

Revolutionizing polymer engineering for Photodetectors: A Machine Learning-Assisted paradigm for rapid materials discovery

Polymers are appealing candidates for photoelectric applications because of their intrinsic characteristics include flexibility in substrate compatibility, ease of manufacturing, room temperature operating conditions, and adaptable optoelectronic properties. In present study, we have used the machine learning (ML) for property prediction and polymer designing. Multiple ML models are trained. 10,000 novel polymers are generated using automatic method. The synthetic accessibility of the chosen polymers is predicted. Structural similarity among the selected polymers is also calculated that indicated good structural similarity among the chosen polymers. By effectively identifying and optimizing novel polymers, the implemented methods substantially increase the chances of uncovering superior materials suited for advanced applications.

Large reduction in band gap and conduction mechanisms in Bi0.5Na0.5TiO3-based ceramics with a sizable polarization

Low band gap ferroelectrics that exhibit high polarization at ambient conditions are highly desirable for achieving efficient charge carrier separation in photovoltaic applications. In this work, a well-designed Co/Nb-modified Bi0.5Na0.5TiO3 system (1-x)Bi0.5Na0.5TiO3-xCaCo0.5Nb0.5O3 with x=0.00–0.20 offers a platform with the characteristics of low band gap and high ferroelectric polarization simultaneously. A structural phase transition from rhombohedral to monoclinic structure as the x content increases, which is verified by XRD analysis. Specifically, the x=0.10 ceramic exhibited a considerable high remanent polarization of 20.2 μC/cm2 and a low band gap of 2.18 eV, approximately 31% lower than that for a pure BNT sample (∼3.13 eV). However, the leakage current significantly increased with an increase in the x content, where it exceeded by more than three orders of magnitude for the x=0.20 sample in comparison to the pure BNT sample. Current-voltage characteristics revealed that space-charge-limited conduction was the primary conduction mechanism within the ceramics with x<0.20, which can be attributed to the free carriers confined by oxygen vacancies. On the other hand, field-assisted ionic conduction was revealed to be the primary conduction mechanism in the sample corresponding to x=0.20 at room temperature. We ascribe these mechanisms to oxygen vacancies and multivalent cobalt ions based on the XPS analysis. An improved understanding of conduction mechanism sheds light on leakage current problems and facilitates the design of BNT-based ferroelectric devices with excellent insulating character for high-performance photoelectric and photovoltaic applications.

Chlorophyl-Passivated Ytterbium-Doped Perovskite Quantum-Cutting Film for High-Performance Solar Energy Conversion and Near-Infrared Light-Emitting Diode Applications.

The quantum cutting ytterbium (Yb3+)-doped CsPbX3 (X = Cl, Cl, or Br) nanocrystals, exhibiting photoluminescence quantum yields (PLQYs) exceeding 100%, hold significant promise for applications in solar energy conversion technologies and near-infrared (NIR) light-emitting diodes (LEDs). This work investigates the usage of chlorophyll (CHL), a naturally existing organic pigment, as an efficient molecular passivator to improve the performance of quantum cutting films. With the assistance of CHL, the resultant perovskite film displays an increased PLQY of 176%. The commercial silicon solar cells (SSCs) with CHL-treated perovskite films demonstrate a remarkable photon-to-current conversion efficiency improvement of 1.83% for a 330.15 cm2 area SSC device. Additionally, a CHL-modified Yb3+:CsPbCl3 film was used to create 988 nm NIR LEDs with an external quantum efficiency of 3.2%. This work provides a new, eco-friendly approach for producing high-quality, large-area Yb3+-doped perovskite film for deployment in photoelectric and night vision applications.

Broadband InBiSe3 alloy photoelectric detector from visible to terahertz

With the demand for communication, imaging, spectroscopy, and other applications, broadband detection has always been a particularly popular direction. However, the current photodetectors have the problems of relatively narrow response bands, a low sensitivity, a slow response speed, and complex manufacturing processes. In this article, the alloy material InBiSe3 is proposed to manufacture a wideband photodetector from visible to terahertz at room temperature. The noise equivalent power (NEP) of the detector is 1.37 × 10−10 W Hz−1/2 at 635 nm, 1.2 × 10−10 W Hz−1/2 at 808 nm, and 1.56 × 10−10 W Hz−1/2 at 980 nm. The device also exhibits a good response in the terahertz and millimeter-wave bands, with a NEP of 8.33 × 10−15 W Hz−1/2 at 0.023 THz, 7.03 × 10−14 W Hz−1/2 at 0.14 THz, 6.14 × 10−15 W Hz−1/2 at 0.171 THz, 1.91 × 10−14 W Hz−1/2 at 0.35 THz, and 4.04 × 10−14 W Hz−1/2 at 0.5 THz based on the electromagnetic induced potential wells effect. The response time is as fast as 10 µs. Our results demonstrate the promise of the InBiSe3 alloy for photoelectric applications and provide a method for the high performance of broadband photodetectors.

Doping‐Induced Performance Improvement in ReS2 Field Effect Transistors: Exploring a Heterostructure with In2O3 Quantum Dots

AbstractRhenium disulfide (ReS2) is a type of transition metal dichalcogenides (TMDs) that has potential electronic and photoelectrical applications. However, limited research has been conducted on improving its electrical properties and understanding the effect of doping on ReS2‐based devices. In this study, the enhanced electrical and photoelectrical performance of a 2D/0D heterostructure constructed by decorating the In2O3 quantum dots (QDs) on a multilayer ReS2 field‐effect transistor (FET) is reported. The In2O3 QDs are characterized by using a transmission electron microscope, optical absorption, and photoluminescence spectroscopy. The n‐doping effects with improved mobility are clearly observed, which is attributed to the electron transfer induced by the relatively high conduction band level of In2O3 QDs. Owing to the channel migration of ReS2 and traps at the ReS2/In2O3 QDs interface, additional performance improvements are observed, including reduced contact resistance, improved subthreshold swing, and increased photoresponsivity; however, the photoresponse speed is decreased. In summary, the findings suggest a novel mixed‐dimensional heterostructure for enhancing the performance of ReS2 transistors and provide insights into doping‐induced channel migration for 2D materials.

Construction of 3D-graphene/NH2-MIL-125 nanohybrids via amino-ionic liquid dual-mode bonding for advanced acetaldehyde photodegradation under high humidity

The development of metal organic framework (MOF)-based π-π conjugated structures capable of effectively transforming H2O from humid air to •OH radicals for VOCs photodegradation is a significant but difficult task. Herein, an amino-ionic liquid (NH2-IL) based dual-mode bridging strategy was proposed to connect 3D-graphene with NH2-MIL-125 forming IL-3DGr/NM(Ti) nanohybrids for advanced acetaldehyde photodegradation. The rational integration of these components was responsible for: (1) maintaining π-π conjugated electron transport system; (2) generating abundant coordinatively unsaturated sites and oxygen vacancies; (3) increasing surface area of the nanohybrids. With these attributes, IL-3DGr/NM(Ti) demonstrated enhanced charge separation and transportation electrochemical impedance spectroscopy (EIS): 7-times), acetaldehyde adsorption (22 %), light absorption (bandgap: 1.51 eV). The rapid H2O adsorption and photoconversion to •OH radicals by IL-3DGr/NM(Ti) enabled it to demonstrate superior CH3CHO photodegradation rate under high humidity, surpassing many state-of-the-art photocatalysts by 9 to 187 times under static air conditions and with nearly similar catalyst dosages* (photocatalyst weight and initial acetaldehyde concentration (mg ppm−1) ratio). Interestingly, the IL-3DGr/NM(Ti) photocatalytic activity was enhanced by increasing RH% up-to 80 %. Besides, the nanohybrids demonstrated tremendous stability, with only a 3.9 % decline observed after 5 consecutive-cycles. This strategy provides new prospects to improve the compatibility of graphene/MOF materials for futuristic photoelectrical applications under high humidity.

Analysis of the optical and electronic characteristics of Al/NiPc complex/p-Si diode

The primary goal of this work is to explore how the introduction of the Nickel (II) phthalocyanine tetrasulfonic acid tetrasodium salt (NiTsPc) organic interlayer influences the performance of conventional metal/semiconductor diodes. Firstly, the optical features of the NiTsPc organic film formed onto glass substrate were investigated. For this, the UV–vis spectroscopic data were used to determine various optical parameters like absorption coefficient (α), extinction coefficient (k), and refractive index (n). Then, Al/NiTsPc/p-Si diode was produced by forming ohmic and rectifier contact. The current–voltage (I-V) measurements were analyzed taking into account thermionic emission (TE) approach at room temperature. Device parameters such as ideality factor (η), barrier height (Φb), and resistance were investigated with the help of I-V technique. The Al/p-Si structure containing NiTsPc film showed good rectifying properties. In this analysis, Φb and η values were determined as 0.83 eV and 1.41, respectively, at room temperature. The device represents photovoltaic features with open-circuit voltage (Voc) of 0.37 V and a short-circuit current (Isc) of 8.17 μA under illumination of 100 mWcm−2. The results represent that the produced junction can be utilized in different photoelectric applications.

Tailoring ohmic contact of CdZnTe based device using a ZnTe:Cu film interlayer

ZnTe materials exhibit distinctive characteristics that render them exceptionally suitable for the utilization in circumventing the electrode contact issue for the CdZnTe based devices for photoelectric applications. This work employed the co-sputtering technique to fabricate ZnTe:Cu films, probing the influences of Copper (Cu) sputtering power on the film's structural, morphological, optical, and electrical properties. It is disclosed that the sputtering power of the Cu target leads to a proportional increase in CuxTe compounds within the ZnTe:Cu films. Notably, an increase in the sputtering power of the Cu target is found to enhance the carrier concentration of the film, but not decrease the resistivity. This unnormal arose is due to a substantial reduction in carrier mobility at higher Cu target sputtering powers. The ZnTe:Cu film exhibits relatively lower resistivity when the sputtering power of the Cu target is approximately 3 W. The optimized ZnTe:Cu film as a buffer layer for the electrode is favor of remarkable improving the ohmic contact properties between the electrode and the CdZnTe, exhibiting a low contact resistivity of 0.62 Ω cm2. This work offers a promising approach to ameliorate the contact performance for the CdZnTe devices with high performance and high reliability.

Dual-directional SCR device with dual-gate controlled mechanism for ESD protection in photoelectric chip

The dual-directional silicon-controlled rectifier (DDSCR) is an electrostatic discharge (ESD) protection device. It can provide positive and negative ESD surge paths and has excellent robustness. However, industry-level sensors operating in strong electromagnetic interference environments impose higher reliability requirements on photoelectric chips. This paper proposed a novel DDSCR with a dual-gate controlled mechanism. By incorporating the gate diode triggering and the gate field modulation mechanism into the traditional DDSCR, and further utilizing additional parasitic bipolar junction transistors (BJTs) for diversion, the proposed device exhibits significantly improved ESD characteristics. Measurement results indicate that, compared to DDSCR, the proposed device exhibits a 27.5% reduction in trigger voltage (Vt1 ), a 96.1% improvement in holding voltage (Vh ), and achieves an equivalent human body model protection level of 11.45 kV, demonstrating exceptional design area efficiency. The experimental findings validate the effectiveness of the proposed device in 5 V photoelectric chip applications.

Thickness-dependent optoelectronic properties of titanium carbide MXene

Due to its tunable interlayer chemistry, MXene shows great potential in various sensor applications, but the optoelectronic properties of MXene are greatly hindered by the slow photoresponsivity of the intercalation chemistry. The main challenge to MXene in photoelectric sensor applications arises from its composite resistive properties. This paper analyzes the photoelectric responses separately by constructing singlelayer and multilayer structures. Under light, the resistance of a monolayer of MXene increases to 100.1% and recovers in 1 s. When the number of layers increases, the resistance of MXene quickly drops to 99.6% under light and recovers slowly within 15 s. In summary, this study reveals how MXene's layered structure affects its photoresponsivity, offering insights for advancing MXene-based optoelectronic sensors.

Uncovering the structural and photoelectric properties of perovskite crystals by joint multifaceted characterization and theoretical analysis

The potential of organic-inorganic hybrid perovskites, owing to their distinct photoelectric attributes and boosted photoluminescence stability, has garnered substantial attention. Despite comprehensive examinations of the synthesis and optical characteristics of FAPbBr3 crystals, the understanding of their microstructure's implication on photoelectric applications, their electronic configuration, and electron-phonon interplay remains vague. In this study, we detailed the electronic configuration, phonon dispersion, and vibrational properties using density functional theory. We further calculated the formation enthalpy stability diagram. Characterization and calculation of the crystalline structure were accomplished via Rietveld refinement. Phonon dispersion curves, as well as total and partial phonon densities of states, were also calculated. The theoretical results align well with experimental Fourier infrared and Raman spectra. Beyond elementary characterization, we explored the photoelectric qualities of FAPbBr3 crystals, thereby reaffirming the outstanding photoelectric attributes and extensive application potential. A non-contact fixed-point lighting device was designed based on the principle of electromagnetic induction coils, which proved the uniformity of crystal luminescence. According to the first principle, FAPbBr3 possesses a Poisson ratio of 0.32, indicative of high flexibility, emphasizing their superb photoelectric characteristics and vast application scope.

Enhanced photoelectric performance of Bi2O2Se/CuInP2S6 heterojunction via ferroelectric polarization in two-dimensional CuInP2S6.

Two-dimensional (2D) materials have drawn tremendous interest as promising materials for photoelectric devices due to their extraordinary properties. As an outstanding 2D photoelectric material, Bi2O2Se (BOS) has exhibited good performance and great potential in photoelectric applications. In this report, we have constructed a photoelectric heterojunction based on BOS and CuInP2S6 (CIPS) nanosheets to achieve enhanced photoelectric performance. With modulation of the ferroelectric-polarization-induced built-in electric field in CIPS, the photogenerated carriers in BOS are effectively separated to form a stable current that is independent of the applied voltage, so that the photoelectric performance of the heterojunction is significantly improved. The photoresponsivity (R), external quantum efficiency (EQE), and normalized detectivity (D*) are calculated and analyzed to evaluate the photodetection performance of the heterojunction. Results demonstrate excellent photoelectric performance of BOS/CIPS heterojunction under irradiation of light from ultraviolet (365 nm), visible (405/550/650 nm) to near-infrared (980 nm). R, EQE, and D* are up to 338.94 A W-1, 7.65 × 104%, and 3.99 × 1010 Jones, respectively, under the condition of 550 nm and 0.24 W m-2. Meanwhile, the measured rise and fall times of the heterojunction reach 2.74 and 4.82 ms, respectively, indicating its fast photoelectric response. This work provides an effective approach to enhance the photoelectric response and stability of BOS via the ferroelectric-polarization-induced built-in electric field of CIPS.