Facile fabrication and tunable electronic properties of Azure A chloride/Si heterojunction for photoelectrical application

Abstract

In this study, the fabrication, structural, and photoelectrical properties of AZACl on Si heterojunction (AZACl/Si HJ) were examined. The morphology of the thin film of AZACl was analyzed using SEM, while XRD studied the crystal structure. The UV spectrophotometer displayed three distinct absorption regions at 194, 260, and 605 nm due to their complex chemical structure. The electrical characteristics of the AZACl/Si HJ were investigated in dark circumstances at various temperatures. The J-V technique was used to derive the diode properties of AZACl/Si HJ. The photoelectric properties of the AZACl/Si HJ, such as photocurrent, sensitivity, and responsivity, were estimated. At - 0.5 V and light irradiance equals 100 mW/cm2, the calculated photocurrent equals 4.76 × 10−5 A/cm2, the sensitivity equals 20, and the responsivity equals 476 × 10−4. These results indicated that the fabricated AZACl/Si HJ exhibits photodiode characteristics.