Sensitive Photodetectors Research Articles

Nucleation-Controlled Crystallization of Chiral 2D Perovskite Single Crystal Thin Films for High-Sensitivity Circularly Polarized Light Detection.

2D Dion-Jacobson (DJ) chiral perovskite materials exhibit significant promise for developing high-performance circularly polarized light (CPL) photodetectors. However, the inherently thick nature of DJ-phase 2D perovskite single crystal limits their ability to differentiate CPL photons with the two opposite polarization states. In addition, the growth of DJ-phase perovskite single crystal thin films (SCTFs) has proven challenging due to the strong interlayer electronic coupling. Here, a nucleation-controlled strategy is employed to grow a novel DJ-phase perovskite [(R/S)-3APr]PbI4 [(R/S)-3APr = (R/S)-3-Aminopyrrolidine] SCTFs with large area, low thickness and hence high aspect ratios. Structural and photoluminescence analyses reveal that introducing the divalent organic cations into the perovskite framework reduce the interlayer distance, resulting in low exciton binding energy. This facilitates charge separation and transport. The resulting SCTF photodetector showcases excellent detection performance with anisotropy factor for photocurrent as high as 0.65, responsivity of 1.97 A W-1, detectivity of 5.3 × 1013 Jones, and 3-dB frequency of 2940Hz, demonstrating its potential as a promising candidate for CPL-sensitive photodetectors. This novel approach, therefore, provides a framework for the growth of DJ-phase perovskite SCTFs and advances their applications in sensitive CPL photodetection.

High sensitivity of UV photodetector based on SnO2-ZnO/P-Si heterojunctions prepared by hydrothermal method

High sensitivity of UV photodetector based on SnO2-ZnO/P-Si heterojunctions prepared by hydrothermal method

Nonpolar P-type Conjugated Small Molecules Enable High-Performance Organic Photodetectors for Potential Application in Optical Wireless Communication.

The high responsivity and broad spectral sensitivity of organic photodetectors (OPDs) present a bright future of commercialization. However, the relatively high dark current density still limits its development. Herein, two novel nonpolar p-type conjugated small molecules, NSN and NSSN, are synthesized as interface layers to enhance the performance of the OPDs, which not only can tune energy alignments and increase the reverse charge injection barrier but also can reduce the interfacial trap density. Moreover, benefiting from the smoother surface morphology and enhanced conductivity, the NSN exhibited superior charge transport and collection properties. Consequently, the OPD with NSN achieved a dark current density of 0.37 nA cm-2 and a high specific detectivity of 2.77 × 1013 Jones at -2 V. More importantly, the optimized OPDs can be successfully integrated into optical communication systems, demonstrating precise digital signal communication without obvious distortion, showing promising application potential in the wireless transmission system.

Suppression strategy of interfacial defects: γ-ray-induced nano structural rearrangement of NiOx sol-gel for highly sensitive organic photodetectors

Suppression strategy of interfacial defects: γ-ray-induced nano structural rearrangement of NiOx sol-gel for highly sensitive organic photodetectors

High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy

Infrared (IR) spectroscopy is a powerful, nondestructive analytical technique that requires cost‐effective and highly sensitive IR photodetectors (PDs). Herein, complementary metal‐oxide‐semiconductor (CMOS)‐compatible GeSn p–i–n PDs with record‐high detectivity (D*) are presented, offering a broad photodetection range that spans the mid‐IR region. With 10% Sn incorporation, the photodetection range extends to 2680 nm. By introducing a composition‐graded GeSn buffer to enhance the material quality and increasing the thickness of the GeSn active layer to 1490 nm, optical responsivity and dark current are significantly improved, thereby achieving record‐high D* values of and at T = 300 K and T = 77 K, respectively. Leveraging these record‐high D* levels, the capability of GeSn PDs in IR spectroscopy is demonstrated, which can resolve weak photoluminescence from Ge, confirming their effectiveness for sensitive IR detection.

Zero-Dimensional Lead-Free Perovskite Single Crystals for the Sensitive Detection of Visible Light and X-Rays.

The excellent performance and facile fabrication process of perovskite semiconductor materials make them highly promising candidates in the field of optoelectronic devices. Whether for visible light or X-rays, detectors with low detection limits can better identify weak light signals, significantly reducing the intensity of the received light source during device operation. In particular, for X-ray detectors, reducing X-ray dosage can greatly enhance the safety of X-ray imaging technology. This work develops detectors with low detection limit based on zero-dimensional (0D) MA3Bi2I9 single crystals. The anisotropy of MA3Bi2I9 and its influence on the detector's performance were investigated in detail. Detectors perpendicular to the (001) crystal plane have better weak light detection capability and require significantly less light intensity compared to devices parallel to the (001) crystal plane. X-ray detector with a limit of detection (LoD) of 0.68 nGyair s-1 and sensitivity of 5072 μC Gyair -1 cm-2 was obtained. The present study offers comprehensive insights into the operational mechanism of layered perovskites, which can provide valuable guidelines for future designs and fabrications of highly sensitive photo and X-ray detectors.

Insight into gain and transient response characteristics of AlGaN/GaN hetero-junction based UV photodetectors: Case study on the role of incident light intensity

Gain and response speed are two key performance parameters for high sensitivity photodetectors (PDs). However, the effect of incident light intensity on gain and transient response properties of AlGaN/GaN hetero-junction based PDs are still not fully understood. Here, we design and fabricate an AlGaN/GaN hetero-junction based ultraviolet (UV) PD with interdigitated electrodes formed by a conductive two-dimensional electron gas (2DEG) channel, which exhibits a low dark current of 2.92 × 10−11 A and a high responsivity of 3060 A/W at 10 V bias. The high-gain AlGaN/GaN 2DEG PD has a similar working mechanism to those of traditional phototransistors, but its device architecture is evidently simplified. By investigating the variation of gain and transient response characteristics of the 2DEG PD as a function of incident UV light intensity, it has been concluded that the gain of the PD in a low-light intensity region is dominated by hole accumulation-induced electron escape from the 2DEG, while in a high-light intensity region, the gain is dominated by photoconductivity effect and limited by carrier recombination. This study provides guidance for future practical applications of AlGaN/GaN-based PDs in complex UV illumination environments.

Enhancing UV photodetection sensitivity via pulsed laser optimization in SnO2:WO3/Si nanostructures

Abstract This manuscript investigates the deposition of tin oxide (SnO2) doped tungsten trioxide (WO3) films on silicon (Si) substrate using pulsed laser deposition technique (PLD) for ultraviolet (UV) photodetection. The structural, optical, morphological, electric, and photodetector properties of SnO2 doped WO3 films were extensively investigated. The optical characteristics, using UV-Vis spectroscopy, reveals a tunable optical band gap ranging from 2.85 eV to 2.25 eV with increasing laser energy, which is consistent with the findings obtained from photoluminescence (PL) analysis. Raman spectroscopy demonstrates three vibration modes at 319.80, 603.30, and 866.20 cm-1. Field emission scanning electron microscopy (FESEM) images displayed spherical nanoparticles with average diameters of 43.90, 47.55, and 62.20 nm for 140, 180, and 220 mJ, respectively. Atomic force microscopy (AFM) measurements indicate an increase in the thin film grain size, roughness surface, and root mean square at higher laser energies (140, 180 and 220 mJ). Under illumination condition, the photodetector gives a considerable photocurrent amount (0.5 mA), which increases with higher laser energies. The proposed geometry demonstrates an excellent photo-response within the wavelength range of 350 to 550 nm, mainly at 420 nm. The optimized device illuminated with laser energy of 220 mJ exhibits a response and recovery time of 352 ms and 737 ms, respectively, highlighting its potential for efficient and responsive applications.

Core-shell nanorods film of p-CuZnS/n-TiO2 with boosting interfacial charge separation for sensitive photoelectrochemical photodetector

Copper zinc sulphide (CZS) due to high conductivity, fast photoresponse and good stability has attracted rising attention in optoelectronic field. Constructing heterojunctions with rational energy bands alignment can accelerate carrier separation to improve the performance of CZS-based photoelectric device. Herein, p-CZS/n-TiO2 core-shell nanorods heterojunction film was successfully fabricated for the first time. CZS nanoparticles (NPs) were directly loaded on the surface of TiO2 nanorods (NRs) through a simple chemical bath deposition. Photoelectrochemical (PEC) photodetector based on CZS/TiO2 composite film was designed and interfacial charge kinetics has also been investigated. The CZS/TiO2 PEC device exhibits fast response speed of 95/56 ms, high responsivity of 7.1 mA W-1 and detectivity of 5.6 × 1012 Jones at a bias voltage of 1 V. The light on/off ratio of self-powered CZS/TiO2 PEC device achieves 5.6 × 103, nearly 30.4 times higher than bare CZS PEC device. Furthermore, the photodetection performance of the CZS/TiO2 PEC device can be effectively regulated by light power density and environment conditions, promoting its adaptability in multifarious practical applications. The findings suggest that CZS/TiO2 heterostructure film devices have great potential for high-performance and energy-efficient PEC photodetectors.

Development of highly sensitive UV photodetector based on chevronic TiO2 thin film using simple oblique angle deposition technique

Development of highly sensitive UV photodetector based on chevronic TiO2 thin film using simple oblique angle deposition technique

Optical resonant cavities carving pathways in tunable wavelength sensitive visible-NIR organic photodetectors

Enhancing the photodetection capabilities of organic photodetectors (OPDs) is crucial for advancing applications in medical monitoring, optical communications, image sensing, and robotics, where a strong, focused peak response at a specific designed wavelength is essential for improving sensitivity, wavelength selectivity, and resolution in imaging systems. By controlled integration of ZnO layers within PBDBT:BTP-4F-based OPDs to form a Fabry-Pérot optical cavity, we developed a cost-effective approach to fabricating highly sensitive OPDs by utilizing PBDBT:BTP-4F organic bulk heterojunctions, and extended its detection wavelengths into the near-infrared (NIR) range. Our design integrates a single silver (Ag) layer that significantly enhances peak detection at a wavelength of 830 ​nm, resulting in a remarkably narrow full-width at half maximum (FWHM) wavelength of 30 ​nm and yielding a photoresponse ten times greater than that of non-resonant devices. Furthermore, by varying the thickness of the ZnO layer from 77 ​nm to 620 ​nm, we achieve high spectral tunability, allowing fine adjustments of the resonant peak across a spectrum ranging from ultraviolet (UV) and visible to NIR wavelengths. This sensitive photodetector is also well-suited for applications in photoplethysmography (PPG), effectively detecting pulse signals in the NIR spectrum which has significant potential in medical diagnostics. This work advances the integration of cost-effective, wavelength-selective spectroscopic visible-NIR OPDs, paving the way for the next generation of sensitive photodetectors.

Double modulation of the electric field in InGaAs/Si APD by groove rings for the achievement of THz gain-bandwidth product

Abstract Avalanche photodiode (APD) is commonly used as a receiver in optical communication and light detection and ranging (LIDAR), offering highly sensitive photodetection capabilities. A key strategy for improving the gain-bandwidth product (GBP) of the APD involves the optimization of the electric field distribution using the charge layer. However, traditional modulation methods to adjust the carrier transport and avalanche process using the charge layer often face challenges (inefficiency and non-uniformity). An InGaAs/Si APD based on the wafer bonding method with a GBP up to 1.03 terahertz (THz) is reported theoretically in this work. The charge layer and groove rings are inserted at the InGaAs/Si bonded interface to modulate the electric field in the APD effectively, demonstrating low dark current and reduced avalanche bias of the device. This approach induces a dramatic and rapid variation of the electric field at the interface while reducing the gradient of the electric field in the multiplication layer. Additionally, the indirect impact of the groove ring on mitigating the adverse effects of the lattice mismatch is pointed out, and the optimal doping concentration range of the charge layer is identified to enhance the modulation effect of the electric field for stronger impact ionization. These findings provide valuable insights for the next-generation InGaAs/Si APDs with high GBP for high-speed data transmission.

Angle-resolved polarization Raman spectroscopy of β-Ga2O3 and their application in sensitive solar-blind photodetection

Polarization-sensitive photodetection has promising prospects for civilian and military applications based on anisotropic semiconductors. However, it is greatly limited due to the lack of valid materials as well as the terrible linear dichroism ratio. In this Letter, a metal–oxide–semiconductor β-Ga2O3 with strong anisotropic property is proposed for highly efficient polarizing detection, which can potentially overcome these limitations. Angle-resolved polarization Raman spectroscopy was performed to confirm excellent anisotropic phonon vibration. Unique narrow solar-blind polarization-sensitive photo-absorption (240–270 nm) can be observed, which can be attributed to the natural anisotropy, referring in particular to the polarization-resolved absorption in the surround of the bandgap of β-Ga2O3. Benefiting from the structural anisotropy, the polarization-sensitive photodetector exhibits an excellent linear dichroic ratio of ∼1.8. Moreover, obvious color change is observed under different polarized angles, providing great potential in polarization imaging. With these advantages, we anticipated that this research will pave avenues for the fabrication of polarization-sensitive solar-blind UV photodetectors.

Simulation and deposition of Tungsten oxide (WO3) films using DC sputtering towards UV photodetector for high responsivity

Tungsten trioxide (WO3) detects UV radiation with great sensitivity while disregarding visible light, and it also has excellent electron mobility, allowing for efficient charge transport and fast response times. This work aims to develop a highly sensitive UV photodetector using WO3 material by optimizing the deposition parameter partial oxygen pressure (PaO2) and annealing the samples at various temperatures to determine the best PaO2 and annealing temperature that results in an improvement in the UV photodetector's sensitivity. The material WO3 was coated on glass substrates using DC magnetron sputtering while altering the PaO2 as 6 × 10−2 Pa, 4 × 10−2 -2 Pa, and 2 × 10−2 Pa, and then each as-deposited sample from varied PaO2 was annealed at temperatures ranging from 100°C to 400°C. When the sample's responses were compared, it was observed that the sample deposited at PaO2 2 × 10−2 Pa and annealed at 400 °C exhibited good photodetection capabilities, as evidenced by several characterization techniques such as SEM, XRD, and IV characterization. The work was subsequently carried out by evaluating the sample deposited at PaO2 2 × 10−2 Pa and annealed at 700 °C, which produced a good result for UV photodetection with the device's responsivity of 1e+4 A/W.

Vertically Stacked Broadband GNIF‐MoS2/p‐Ge Photodetector for Dark Current Suppression, High Photoresponse, and Ultrafast Transient Response

AbstractThe proposed model structure, featuring a gold (Au) nano‐island film (GNIF) integrated with a vertically stacked van der Waals heterojunction and offering an elegant platform for high‐performance, efficient, and sensitive photodetection across a broad spectral range, is designated as GNIF‐MoS₂/p‐Ge(MoS2 = Molybdenum disulfide, p‐Ge = p type germanium). The GNIF is fabricated via ultrathin film deposition, based on the surface dewetting properties of MoS2. The as‐fabricated photodetector (PD), offering ≈20 times reduction in dark current and characterized by wavelength‐dependent high responsivity (R(λ)), photoconductive gain (G(λ)), and detectivity (D(λ)), respond to a broad spectral range from visible light (400 nm) to short wave infrared (SWIR) (1600 nm). The ultrahigh transient response (τr) is found to be ≈2.5 and 16 µs for the 470 (visible light) and 1550 (SWIR) nm wavelengths, respectively, resulting in 3‐dB bandwidths of up to ≈48 kHz, which is considered high for such devices. To understand the inherent mechanisms of broadband detection and the high photoresponse and ultrafast transient response of PDs, a meticulous investigation is conducted on the wavelength‐dependent behaviors, depletion width changes, and material properties. The results provide valuable insights and a basis for the construction of suitable PDs based on nanometer‐thin metal films, 2D semiconductors, and a 3D hybrid structure.

Enhancing the Detection Sensitivity of PbSe Thin Film TTE Photodetector by Adding Light-Trapping Coatings

Enhancing the Detection Sensitivity of PbSe Thin Film TTE Photodetector by Adding Light-Trapping Coatings

2D Gr/WSe2/MoTe2 vertical heterojunction for self-powered photodiode with ultrafast response and high sensitivity

Two-dimensional materials without lattice constraints can be combined into form heterojunctions via van der Waals forces, providing opportunities for the future development of novel high-performance photodetectors. In non-vertical heterojunction devices with long carrier transport channels, SRH recombination due to defect and interface states in the heterojunction and Langevin recombination due to Coulomb interactions induce large amounts of photogenerated carrier recombination, leading to low quantum efficiencies of the heterojunction. At the same time, defect and interface trap states, as well as the long channel of the non-vertical heterojunction device, lead to a slow response speed of the device. In this work, a 2D WSe2/MoTe2 vertical heterojunction photodiode with a transparent graphene top electrode has been designed to simultaneously achieve high sensitivity and fast response speed of photodetectors. Benefiting from the vertical device structure, high-quality interface and low contact resistance, the photogenerated electron-hole pairs can be efficiently separated and transported. The photodiode exhibits remarkable rectification characteristics with a rectification ratio as high as 1.4 × 104, and provides a broadband and self-powered photodetection from the visible to NIR bands (405–1064 nm) with a maximum responsivity of 0.33 A/W at 785 nm. In particular, the photodiode achieves an ultra-fast rise/fall time of 6.49/6.22 μs at 0 V and a further reduction of the response time to 1.68/1.2 μs at a reverse bias of −1 V. This ultra-fast response allows the photodiode to detect switching signals with a cutoff frequency of more than 70 kHz and 200 kHz at 0 V and −1 V, respectively. This work opens up new opportunities for the development of integrated 2D photodetectors with low power consumption, high sensitivity, and high speed.

Uniaxial Strain Engineering of Anisotropic Phonon in Few‐Layer Violet Phosphorus with High Stretchability for Polarized Sensitive Flexible Photodetector

AbstractThe manifestation of mechanical phenomena in quantum materials at the macroscopic level is intricately linked to pronounced electron‐electron interactions within their lattices, a relationship that becomes especially evident in low‐dimensional materials. Violet phosphorous (VP), a nascent 2D material distinguished by its unique vertically aligned tubular structures, has garnered considerable attention owing to its layer‐dependent electronic bandgap, exceptional carrier mobility, and robust air stability. Herein, a comprehensive exploration of the phonon modes exhibited by few‐layer VP through an integrated experimental‐theoretical approach, focusing on the modulation of their Raman response under the uniaxial strain along a‐axis, b‐axis, and tube direction, respectively, is undertaken. Density functional theory calculations highlight when strain is applied along the a‐ or b‐axis direction, the strain is predominantly mitigated through tube rotational adaptations instead of the change of bond length and bond angle, culminating in a pronounced anisotropic Raman response. Moreover, the strain engineering can effectively optimize the photoelectric response performance of VP, including increase the responsivity ≈2500% and elevate the anisotropic ratio from 2.26 to 3.38. This investigation not only confirms the superior stretchability and impact resistance properties of cross‐structured VP but also establishes the groundwork for exploring the strain‐induced anisotropic optoelectric properties to VP.

Highly sensitive Ga2O3 MSM solar-blind UV photodetector with impact ionization gain.

In this study, a (400) crystal-oriented β-Ga2O3 thin film with a thickness of approximately 400 nm was grown on a c-plane sapphire substrate using atomic layer deposition. Schottky contact-type metal-semiconductor-metal solar-blind ultraviolet detectors with an Au/Ni/Ga2O3/Ni/Au structure were fabricated on the epitaxial thin films. The Schottky barrier height is about 1.1 eV. The device exhibited a high responsivity of up to 800 A/W, and a detectivity of 6 × 1014 Jones while maintaining a relatively fast response speed with a rise time of 4 ms and a fall time of 12 ms. The photo-to-dark current ratio was greater than 103, and the external quantum efficiency exceeded 103, indicating a significant gain in the device. Through the analysis of TCAD simulation and experimental results, it is determined that the impact ionization at the edge of the MSM electrode and channel contact is the main source of gain. Barrier tunneling effects and the photoconductive effect due to different carrier mobilities were not the primary reasons for the gain.

High sensitivity and low noise photodetector based on topological crystalline insulator SnTe/Si heterostructure

Topological insulators, as a class of materials with narrow bulk bandgap and gapless surface states with response wavelengths covering infrared to terahertz, have great potential for application in new generation photodetector, but the large dark current and small photocurrent limit their application, so the device performance is generally improved by the method of heterogeneous integration. SnTe, as a topological crystalline insulator with multiple surface states, has a narrower forbidden bandwidth, it is suitable for the fabrication of infrared photodetector. In this work, SnTe thin films were deposited on Si substrates by magnetron sputtering, and SnTe/n-Si heterostructure photodetectors were fabricated on this basis. The photodetector exhibited good photoresponses in the visible near-infrared (532–1400 nm), with the responsivity (R) and normalized detectivity (D*) reaching 1.12 A/W, 5.17 × 1011 Jones. Thanks to the formation of the built-in electric field at the SnTe/Si interface, the photogenerated carriers can be rapidly separated and transported, and the switching ratio reaches 103. In addition, the rise time and fall time of the device are 218 μs and 174 μs, respectively. The good performance and simple preparation method make the device have a wide application prospect in the new generation of photodetector.