Abstract
Abstract Avalanche photodiode (APD) is commonly used as a receiver in optical communication and light detection and ranging (LIDAR), offering highly sensitive photodetection capabilities. A key strategy for improving the gain-bandwidth product (GBP) of the APD involves the optimization of the electric field distribution using the charge layer. However, traditional modulation methods to adjust the carrier transport and avalanche process using the charge layer often face challenges (inefficiency and non-uniformity). An InGaAs/Si APD based on the wafer bonding method with a GBP up to 1.03 terahertz (THz) is reported theoretically in this work. The charge layer and groove rings are inserted at the InGaAs/Si bonded interface to modulate the electric field in the APD effectively, demonstrating low dark current and reduced avalanche bias of the device. This approach induces a dramatic and rapid variation of the electric field at the interface while reducing the gradient of the electric field in the multiplication layer. Additionally, the indirect impact of the groove ring on mitigating the adverse effects of the lattice mismatch is pointed out, and the optimal doping concentration range of the charge layer is identified to enhance the modulation effect of the electric field for stronger impact ionization. These findings provide valuable insights for the next-generation InGaAs/Si APDs with high GBP for high-speed data transmission.
Published Version
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