BackgroundBismuth vanadate (BiVO4) and nickel oxyhydroxide (NiOOH) are the prominent photo(electro)catalysts for water-splitting photoelectrodes. The strong visible light absorbers of the Bi2S3 decorated type II photoanode of WO3/BiVO4/NiOOH efficiently improve the photo-excitons in the photoanodes. MethodsIn this work, type II semiconductors heterostructure photoanodes are fabricated as Cu:WO3/BiVO4/Bi2S3/NiOOH. The bottom layer of heavily Cu- doped n-type WO3 nanoplatelets is grown on FTO to make nano-heterostructure Cu:WO3/BiVO4 photoanodes. The Bi2S3 semiconductor has been grown on the BiVO4 by chemical bath deposition and NiOOH deposited using the photo-assisted electrodeposition method. The resulting periodically ordered BiVO4/WO3 platelets distinctly outperform by the Bi2S3 and NiOOH-decorated quaternary photoanodes. Significant findingsAs a result, the as-prepared photoanode shows a high photocurrent density of 6.85 mA cm−2 at 0 V vs. Ag/AgCl under the irradiation of 100 mW/cm2 AM 1.5 G simulated sunlight. With the higher photoactivity of Bi2S3 and NiOOH cocatalysts, the photoanode substantially gains stability at higher saturation photocurrents. Overall, the photoanode resulted in a low charge transfer resistance (387.4 Ohm.cm2) and a higher built-in potential of 180 mV, with 2.67 % of ABPE and 2.1 % of STH efficiencies at 0.3 V vs. Ag/AgCl.
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