Amorphous NiB layer deposition and piezoelectric field assisted for efficient photocatalytic degradation of Sb2S3

Abstract

The poor surface charge reaction efficiency and electrical conductivity limit the further application of Sb2S3 in photocatalytic degradation of pollutants. An amorphous NiB layer was deposited on the surface of Sb2S3 by photo-assisted electrodeposition, and the presence of the NiB layer accelerated the charge transport and catalytic reactivity, which greatly enhanced the degradation ability. The photocurrent density of NiB-Sb2S3 was about 0.12 mA/cm2, which was 6 times of that of pure Sb2S3. After increasing the applied mechanical site by ultrasonication, the photocurrent of NiB-Sb2S3 was further increased to 0.19 mA/cm2, which was almost 9.5 times that of pure Sb2S3 under photocatalytic conditions alone. The catalytic kinetic curves show that the degradation rate of RhB by NiB-Sb2S3 under piezoelectric-photocatalytic conditions is significantly increased, being 11.48 times of the degradation rate of Sb2S3 under photocatalytic conditions. The detailed experimental data indicate that the amorphous NiB layer not only changes the electronic structure of the catalyst surface, but also increases the number and activity of the catalyst active sites, and reduces the chance of electron and hole recombination after photoexcitation. The introduction of an applied piezoelectric field provided a driving force for carrier migration to the catalyst surface, which further improved the separation ability. This study provides a new strategy to further improve the photocatalytic degradation.