Perpendicular Recording Research Articles

Anomalous spin current anisotropy in a noncollinear antiferromagnet

Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film of Mn3Pt, a noncollinear antiferromagnetic spin source with face-centered cubic structure. Such spin current anisotropy originates from the intertwined time reversal-odd ({{{{{mathscr{T}}}}}}-odd) and time reversal-even ({{{{{mathscr{T}}}}}}-even) spin Hall effects. Based on symmetry analyses and experimental characterizations of the current-induced spin torques in Mn3Pt-based heterostructures, we find that the spin current generated by Mn3Pt (001) exhibits exotic dependences on the current direction for all the spin components, deviating from that in conventional cubic systems. We also demonstrate that such an anisotropic spin current can be used to realize low-power spintronic applications such as the efficient field-free switching of the perpendicular magnetizations.

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Current induced spin-orbit torque (SOT) holds great promise for next generation magnetic-memory technology. Field-free SOT switching of perpendicular magnetization requires the breaking of in-plane symmetry, which can be artificially introduced by external magnetic field, exchange coupling or device asymmetry. Recently it has been shown that the exploitation of inherent crystal symmetry offers a simple and potentially efficient route towards field-free switching. However, applying this approach to the benchmark SOT materials such as ferromagnets and heavy metals is challenging. Here, we present a strategy to break the in-plane symmetry of Pt/Co heterostructures by designing the orientation of Burgers vectors of dislocations. We show that the lattice of Pt/Co is tilted by about 1.2° when the Burgers vector has an out-of-plane component. Consequently, a tilted magnetic easy axis is induced and can be tuned from nearly in-plane to out-of-plane, enabling the field-free SOT switching of perpendicular magnetization components at room temperature with a relatively low current density (~1011 A/m2) and excellent stability (> 104 cycles). This strategy is expected to be applicable to engineer a wide range of symmetry-related functionalities for future electronic and magnetic devices.

Progress and Application Perspectives of Voltage‐Controlled Magnetic Tunnel Junctions

AbstractThis article discusses the current state of development, open research opportunities, and application perspectives of electric‐field‐controlled magnetic tunnel junctions that use the voltage‐controlled magnetic anisotropy effect to control their magnetization. The integration of embedded magnetic random‐access memory (MRAM) into mainstream semiconductor foundry manufacturing opens new possibilities for the development of energy‐efficient, high‐performance, and intelligent computing systems. The current generation of MRAM, which uses the current‐controlled spin‐transfer torque (STT) effect to write information, has gained traction due to its nonvolatile data retention and lower integration cost compared to embedded Flash. However, scaling MRAM to high bit densities will likely require a transition from current‐controlled to voltage‐controlled operation. In this perspective, an overview of voltage‐controlled magnetic anisotropy (VCMA) as a promising beyond‐STT write mechanism for MRAM devices is provided and recent advancements in developing VCMA‐MRAM devices with perpendicular magnetization are highlighted. Starting from the fundamental mechanisms, the key remaining challenges of VCMA‐MRAM, such as increasing the VCMA coefficient, controlling the write error rate, and achieving field‐free VCMA switching are discussed. Then potential solutions are discussed and open research questions are highlighted. Lastly, prospective applications of voltage‐controlled magnetic tunnel junctions (VC‐MTJs) in security applications, extending beyond their traditional role as memory devices are explored.

A Graded Precompensation Scheme by Pattern Classification on Nonlinear Transition Shift for Perpendicular Magnetic Recording

To achieve higher magnetic recording areal densities, signal distortions caused by the crosstalk among consecutive magnetized transitions that lead to nonlinear transition shifts (NLTS) must be eliminated. We calculated and sorted the transition shifts of different recorded patterns and classified corresponding patterns based on an analytical method. We proposed a graded write precompensation scheme according to the classified patterns and compared the detecting performance of a perpendicular magnetic recording system using the graded compensation and traditional pattern-aware compensation during the writing process. Simulation results show our proposed graded precompensation can effectively mitigate the nonlinear distortion effect caused by NLTS and outperforms the traditional pattern-aware compensation method. The detecting BER decreases by 14.7% when the SNR of electronic noise is only 20 dB and the bit length is 10nm.

Angular dependence of antisymmetric magnetoresistance in Co-Tb thin films with artificial domain wall inclination

We report the observation of angular-dependent antisymmetric magnetoresistance (MR) in artificially deformed Co-Tb Hall bar structures with perpendicular magnetization. Simultaneous transport measurements and domain imaging show that the antisymmetric MR results from the generation of a single domain wall (DW) inclination due to the restricted geometry and is further proportional to the inclination-associated geometry factor. The results are well described by a theoretical model that is supported by analytic and numerical calculations of the nonequilibrium current and Hall voltage distribution in the vicinity of the inclined DW. This finding provides a straightforward and effective approach to control DW geometries, leading to various DW-based spintronic device applications.

Deterministic Current‐Induced Perpendicular Switching in Epitaxial Co/Pt Layers without an External Field

AbstractCurrent‐induced spin‐orbit torques (SOTs) have emerged as a powerful tool to control magnetic elements and non‐uniform magnetic textures such as domain walls and skyrmions. SOT‐induced switching of perpendicular magnetization generally requires an external field to break the rotational symmetry of the spin‐orbit effective fields responsible for the deterministic reversal. The proposed mechanisms to eliminate this requirement often rely on complex multilayer structures that necessitate laborious optimization in the material and spin transport properties, making them less attractive for applications. Herein, current‐induced, external field‐free switching of an epitaxial MgO/Pt/Co trilayer with an extremely large perpendicular anisotropy in excess of 3 Tesla is reported. It is found that switching occurs due to the interplay of strong SOTs, local anisotropy fluctuations, and the Dzyaloshinkii‐Moriya interaction inherent to this epitaxial system. Given that these layers constitute the base stack of a magnetic tunnel junction, this switching mechanism offers the most technologically viable path toward devices such as field‐free SOT‐based magnetic random‐access memories.

Atomic scale interface engineering for realizing a perpendicularly magnetized CoFeB-based skyrmion hosting material

Néel-type magnetic skyrmions in perpendicularly magnetized systems have attracted considerable interest due to their potential in fundamental research on topological objects and spintronics applications. Various systems have been explored to study Néel-type magnetic skyrmions, including repeated magnetic multilayers, two-dimensional materials, and single magnetic thin-films. Among these, single magnetic thin-films, especially a CoFeB single layer, offers multiple benefits, such as reduced defect energy, high mobility, and easy integration with existing magnetoresistive random access memory technology. However, optimizing CoFeB-based skyrmion hosting materials remains challenging and requires further systematic and comprehensive investigation. In this study, we examine the effect of atomic-scale interface engineering by inserting a Ta layer between the CoFeB/MgO interface on perpendicular magnetic anisotropy, saturation magnetization, and Dzyaloshinskii–Moriya interaction. Moreover, we provide a guideline for engineering material parameters and demonstrate the validity of atomic-scale interface engineering. Our findings contribute to the development of optimized CoFeB-based skyrmion hosting materials.

Densely packed skyrmions stabilized at zero magnetic field by indirect exchange coupling in multilayers

Room-temperature stabilization of skyrmions in magnetic multilayered systems results from a fine balance between several magnetic interactions, namely, symmetric and antisymmetric exchange, dipolar interaction and perpendicular magnetic anisotropy as well as, in most cases, Zeeman through an applied external field. Such field-driven stabilization approach is, however, not compatible with most of the anticipated skyrmion based applications, e.g., skyrmion memories and logic or neuromorphic computing, which motivates a reduction or a cancellation of field requirements. Here, we present a method to stabilize at room-temperature and zero-field, a densely packed skyrmion phase in ferromagnetic multilayers with moderate number of repetitions. To this aim, we finely tune the multilayer parameters to stabilize a dense skyrmion phase. Then, relying on the interlayer electronic coupling to an adjacent bias magnetic layer with strong perpendicular magnetic anisotropy and uniform magnetization, we demonstrate the stabilization of sub-60 nm diameter skyrmions at zero-field with adjustable skyrmion density.

Perpendicular Magnetic Anisotropy of an Ultrathin Fe Layer Grown on NiO(001)

The magnetic anisotropy and magnetic interactions at the interface between $\mathrm{Fe}$ and $\mathrm{Ni}\mathrm{O}$(001) were investigated. Depending on the growth conditions of the $\mathrm{Ni}\mathrm{O}$(001) layers and the postannealing temperature, the preferential magnetization direction of the ultrathin $\mathrm{Fe}$ layer grown on a $\mathrm{Ni}\mathrm{O}$(001) layer changed from the in-plane direction to a direction perpendicular to the film plane. The lattice constant of the $\mathrm{Ni}\mathrm{O}$(001) layers parallel to the growth direction increased with ${\mathrm{O}}_{2}$ flow rate, while that parallel to the in-plane direction were locked onto the MgO(001) substrate regardless of the growth conditions of the NiO layers. Moreover, perpendicular magnetization was observed only when the NiO layer was grown with ${\mathrm{O}}_{2}$ flow rates higher than 2.0 sccm corresponding to oxygen-rich NiO. X-ray magnetic circular dichroism measurements revealed an enhancement in anisotropic orbital magnetic moments similar to the origin of perpendicular magnetic anisotropy at the $\mathrm{Fe}$/MgO(001) interface. The interfacial magnetic anisotropy energies were 0.93 and $1.02\phantom{\rule{0.2em}{0ex}}{\mathrm{mJ}/\mathrm{m}}^{2}$ at room temperature and at 100 K, respectively, indicating less temperature dependence. In contrast, the coercivity ${H}_{c}$ exhibited a significant temperature dependence. Although no signature of exchange bias or unidirectional loop shift was observed, ${H}_{c}$ was strongly dependent on the NiO layer thickness, indicating that the exchange interaction at the interface between the ferromagnetic and antiferromagnetic layers was not negligible, despite the NiO(001) being a spin-compensated surface.

Solid phase epitaxy of perpendicular magnetic BaFe12O19 flexible sheets on a mica substrate

Epitaxial M-type BaFe12O19 flexible sheets, exhibiting RT perpendicular magnetization, were synthesized on mica substrates through the solid phase epitaxy method. The [110] and [001] directions of the BaFe12O19 layer were parallel to the [010] and [001] directions of the mica, respectively. In the synthesis process, amorphous BaFe12O19 films were firstly prepared on Al2O3-buffered mica (001) substrates and then annealed at 800 °C–900 °C in air for single crystallization. During optimization of the synthesis, we found that preparation of the buffer layer and controlling annealing temperature are important for obtaining the epitaxial sheet. The sheets exhibited perpendicular ferrimagnetism with large saturated magnetization (60 Am2 kg−1) and magnetic anisotropy coefficient (2.1 × 105 J m−3) at 300 K, together with flexibility.

Self-Oscillations in a Nanogap Spin Hall Nano-Oscillator with a Perpendicularly Magnetized External Film

We study spin-current-induced magnetodynamics in a planar nanogap spin Hall nano-oscillator (SHNO) based on $\mathrm{Pt}/[\mathrm{Co}/\mathrm{Ni}{]}_{4}$ with a large perpendicular magnetic anisotropy (PMA) at in-plane field geometry. Two distinct dynamic modes are observed in the spin-torque ferromagnetic resonance (FMR) and the generated microwave spectra. The primary mode has a frequency above the FMR frequency and a significant blueshift of the frequency with the increasing current $I$, consistent with the propagating spin-wave mode. The secondary higher-frequency mode with a much weaker power intensity, discrete frequency jump, and a slight redshift of frequency is only observed at low fields below the saturation field of 2 kOe, suggesting that it is likely related to the emerged domain region with in-plane magnetization due to grain-boundary defects, which is further supported by the frequency enhancement with reducing temperature. The primary propagating mode decreases its frequency and broadens its minimum linewidth by reducing the temperature, indicating that the frequency-drift instability dominates its dynamical decoherence due to the boundary-pinning effect. Furthermore, the micromagnetic simulation reproduces the experimentally observed propagating spin-wave and in-plane domain modes, and provides their spatial characteristics. Our demonstrated propagating spin waves in a SHNO with an out-of-plane magnetization extended bilayer can facilitate long-distance mutual synchronization in the SHNO network arrays for enhancing coherence and power as spin-wave sources in magnon-based devices or spin-based neuromorphic computing.

Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas

Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate electric-field, providing two remanent and switchable states, with a large resistance contrast of 1064%. The SOTs can then be controlled electrically in a non-volatile way, both in amplitude and in sign. This achievement in a 2DEG-CoFeB/MgO heterostructures with large perpendicular magnetization further validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration, paving the way to the advent of electrically reconfigurable SOT MRAMS circuits, SOT oscillators, skyrmion and domain-wall-based devices, and magnonic circuits.

Field-free magnetization switching in CoPt induced by noncollinear antiferromagnetic Mn3Ga

The magnetic spin Hall effect (MSHE) may produce the out-of-plane spin current with $z$-direction polarization $({\mathbit{\ensuremath{\sigma}}}_{\mathbf{z}})$, thus allowing the field-free switching of perpendicular magnetization in ferromagnetic films. Here, we fabricate the epitaxial $L{1}_{1}\text{\ensuremath{-}}\mathrm{CoPt}/D{0}_{19}\text{\ensuremath{-}}\mathrm{M}{\mathrm{n}}_{3}\mathrm{Ga}$ bilayers on MgO(111) substrates and characterize their magnetic and electrical transport properties. In the $L{1}_{1}\text{\ensuremath{-}}\mathrm{CoPt}/D{0}_{19}\text{\ensuremath{-}}\mathrm{M}{\mathrm{n}}_{3}\mathrm{Ga}$ bilayers, we observe the spin-orbit torque switching of perpendicular magnetization under zero external field. The magnetization switching ratio and polarity are specifically related to the N\'eel vector direction of the antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{Ga}$ as well as the crystalline orientations which the pulse current is applied along. The field-free switching in the bilayers is attributed to the ${\mathbit{\ensuremath{\sigma}}}_{\mathbf{z}}$ spin current generated by the MSHE, which is driven by the reduced symmetry of ${\mathrm{Mn}}_{3}\mathrm{Ga}$ film with noncollinear spin structure.

Light-induced switch based on edge modes in irradiated thin topological insulators

We investigate transport properties through the nano-ribbons of thin topological insulators irradiated by circularly polarized light in a high-frequency regime. It is demonstrated that pseudo-spin polarized edge modes appearing in the bulk band gap are responsible for the current flowing through this nano-junction whose localization on the top and bottom edges depend strongly on the polarization of light. Based on these edge modes, one can design a light-induced switch with a desirable on/off ratio of the current whose off-state is engineered by dividing the scattering region into two parts. Each part is irradiated by the light with opposite polarization in respect to the other one. This off-state arises from the quantum blocking of transition between two edge modes with opposite pseudo-spin polarization induced by irradiation. The local current on each bond shows how the current passes through the edges and jumps to the opposite edge. Furthermore, some other nano-junctions are proposed as a light-induced switch which are designed based on the gap opening induced by the perpendicular magnetization or structural inversion asymmetry.

Onset of pattern formation in thin ferromagnetic films with perpendicular anisotropy

We consider the onset of pattern formation in an ultrathin ferromagnetic film of the form Omega _t:= Omega times [0,t] for Omega Subset mathbb {R}^2 with preferred perpendicular magnetization direction. The relative micromagnetic energy is given by E[M]=∫Ωtd2|∇M|2+Q∫Ωt(M12+M22)+∫R3|H(M)|2-∫R3|H(e3χΩt)|2,\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\begin{aligned} \\mathcal {E}[M]= \\int _{\\Omega _t} d^2 |\ abla M|^2+ Q \\int _{\\Omega _t} (M_1^2+M_2^2) + \\int _{\\mathbb {R}^3} |\\mathcal {H}(M)|^2 - \\int _{\\mathbb {R}^3} |\\mathcal {H}(e_3 \\chi _{\\Omega _t})|^2, \\end{aligned}$$\\end{document}describing the energy difference for a given magnetization M: mathbb {R}^3 rightarrow mathbb {R}^3 with |M| = chi _{Omega _t} and the uniform magnetization e_3 chi _{Omega _t}. For t ll d, we derive the scaling of the minimal energy and a BV-bound in the critical regime, where the base area of the film has size of order |Omega |^{{frac{1}{2}}} sim (Q-1)^{{-frac{1}{2}}} d e^{frac{2pi d}{t} sqrt{Q-1}}. We furthermore investigate the onset of non-trivial pattern formation in the critical regime depending on the size of the rescaled film.

Efficient Spin-Orbit Torque Switching in a Perpendicularly Magnetized Heusler Alloy MnPtGe Single Layer.

Electrically manipulating magnetic moments by spin-orbit torque (SOT) has great potential applications in magnetic memories and logic devices. Although there have been rich SOT studies on magnetic heterostructures, low interfacial thermal stability and high switching current density still remain an issue. Here, highly textured, polycrystalline Heusler alloy MnxPtyGe (MPG) films with various thicknesses are directly deposited onto thermally oxidized silicon wafers. The perpendicular magnetization of the MPG single layer can be reversibly switched by electrical current pulses with a magnitude as low as 4.1 × 1010Am-2, as evidenced by both the electrical transport and the magnetic optical measurements. The switching is shown to arise from inversion symmetry breaking due to the vertical composition gradient of the films after sample annealing. The SOT effective fields of the samples are analyzed systematically. It is found that the SOT efficiency increases with the film thickness, suggesting a robust bulk-like behavior in the single magnetic layer. Furthermore, a memristive characteristic has been observed due to a multidomain switching property in the single-layer MPG device. Additionally, deterministic field-free switching of magnetization is observed when the electric current flows orthogonal to the direction of the in-plane compositional gradient due to the in-plane symmetry breaking. This work proves that the MPG is a good candidate to be utilized in high-density and efficient magnetoresistive random access memory devices and other spintronic applications.

Room-Temperature Switching of Perpendicular Magnetization by Magnon Torques

Electron-mediated spin torque provides a fast and efficient method to manipulate magnetization; however, electron motion inevitably brings about the generation of Joule heat and corresponding power consumption. Magnon-mediated spin torque, without involving moving electrons, could circumvent the energy dissipation issue. In this work, we fabricate a sandwich structure of topological insulator/antiferromagnetic insulator/ferromagnet with perpendicular magnetic anisotropy. We find that the magnon current with spin angular momentum can traverse a 25-nm-thick antiferromagnetic $\mathrm{Ni}\mathrm{O}$ layer and effectively switch the perpendicular magnetization of $\mathrm{Co}\text{\ensuremath{-}}\mathrm{Fe}\text{\ensuremath{-}}\mathrm{B}$ at room temperature with a critical switching current density of 4.1 \ifmmode\times\else\texttimes\fi{} ${10}^{6}\phantom{\rule{0.2em}{0ex}}\mathrm{A}/{\mathrm{cm}}^{2}$. The magnon torque efficiency is characterized using spin-torque ferromagnetic resonance measurements to be 0.33 with a magnon diffusion length of 26.6 nm. Our work paves the way for manipulating perpendicular magnetization via magnon torques, facilitating the exploration of magnon-based spintronics with low power consumption.

Spin currents with unusual spin orientations in noncollinear Weyl antiferromagnetic Mn3Sn

There are intensive efforts to search for mechanisms that lead to spin-orbit torque with unusual spin orientation, particularly out-of-plane spin orientation which can efficiently switch perpendicular magnetizations. Such a phenomenon has been observed in materials with low structural symmetry, ferromagnetic materials, and antiferromagnets with noncollinear spin structures. Here, we demonstrate the observation of, in addition to out-of-plane spin orientation, spin orientation along the charge current direction in ${\mathrm{Mn}}_{3}\mathrm{Sn}$, a noncollinear antiferromagnet and Weyl semimetal. The mechanism arises from noncollinear spin structure with spin-orbit coupling and it can be viewed as spin rotation around the octupole moment, the lowest order of cluster multipole moment pertaining to the ${\mathrm{Mn}}_{3}\mathrm{Sn}$ crystal group.

Double-layer magnetic recording with multilayer perceptron decoder for single-reader/two-track reading in BPMR systems

To expand an areal density of hard disk drives, bit-patterned magnetic recording (BPMR) using a patterned medium instead of a granular medium as employed in perpendicular magnetic recording is attracting much attention as the next-generation recording technology. To further increase the storage capacity of BPMR, multi-layer magnetic recording can be combined with BPMR. Therefore, this paper considers double-layer magnetic recording with a single-reader/two-track reading technique for the staggered BPMR system, which is performed together with a rate-3/5 modulation code. This paper proposes to utilize a multilayer perceptron decoder to decode and estimate the log-likelihood ratio value of the recorded bit sequence that is obtained from the equalized channel. Simulation results show that at a bit-error rate of 10−4, the proposed system with a double-layer recording medium can achieve an improvement gain of about 1.2 decibel if compared to that with a regular single-layer recording medium, even in the presence of media noise.

Electrically Tunable Topological Phase Transition in van der Waals Heterostructures.

The realization and control of the quantum anomalous Hall (QAH) effect are highly desirable for the development of spintronic and quantum devices. In this work, we propose a van der Waals (vdW) heterostructure of ultrathin MnBi2Se4 and Bi2Se3 layers and demonstrate that it is an excellent tunable QAH platform by using model Hamiltonian and density functional theory simulations. Its band gap closes and reopens as external electric field increases, manifesting a novel topological phase transition with an electric field of ∼0.06 V/Å. This heterostructure has other major advantageous, such as large topological band gap, perpendicular magnetization, and strong ferromagnetic ordering. Our work provides clear physical insights and suggests a new strategy for experimental realization and control of the QAH effect in real materials.