Angular dependence of antisymmetric magnetoresistance in Co-Tb thin films with artificial domain wall inclination

Abstract

We report the observation of angular-dependent antisymmetric magnetoresistance (MR) in artificially deformed Co-Tb Hall bar structures with perpendicular magnetization. Simultaneous transport measurements and domain imaging show that the antisymmetric MR results from the generation of a single domain wall (DW) inclination due to the restricted geometry and is further proportional to the inclination-associated geometry factor. The results are well described by a theoretical model that is supported by analytic and numerical calculations of the nonequilibrium current and Hall voltage distribution in the vicinity of the inclined DW. This finding provides a straightforward and effective approach to control DW geometries, leading to various DW-based spintronic device applications.