Performance Of Power Amplifier Research Articles

Design of Concurrent Tri-Band High-Efficiency Power Amplifier Based on Wireless Applications

To meet the existing requirements of multiband communication and improve the efficiency and performance of communication RF modules, a concurrent tri-band high-efficiency power amplifier operating in three frequency bands is proposed. The input and output impedance values of concurrent power amplifier is analyzed, and the input and output-matching circuit and bias circuit are designed. Through the impedance compensation principle, the impedance matching of three frequency bands is realized, and the amplifier can maintain high power and high efficiency at three arbitrary wide interval frequencies. To this end, a simultaneous tri-band power amplifier is designed and tested by using transistor CGH40010F. The experimental results show that the peak power of the designed simultaneous tri-band high-efficiency power amplifier is more than 10 W, the power-added efficiency reaches 55~69%, and the amplification gain is about 10 dB at three frequency bands of 2.2, 2.6, and 3.5 GHz. The design of concurrent tri-band high-efficiency power amplifier is flexible, the calculation of microstrip line parameters is simple, and it can work in three frequency bands simultaneously. It provides an effective structure scheme for designing concurrent power amplifiers in transmitting systems.

A Millimeter-Wave CMOS Series-Doherty Power Amplifier With Post-Silicon Inter-Stage Passive Validation

This article presents a wideband series-Doherty power amplifier (SDPA) for millimeter-wave (mm-wave) fifth-generation (5G) applications. It features a compact two-step impedance inverting-based series-Doherty power combiner that provides broadband close-to-perfect power back-off (PBO) efficiency enhancement. The amplitude-to-amplitude (AM–AM)/amplitude-to-phase (AM–PM) performance of the load-modulated Doherty power amplifier for broadband operation is analyzed. We also devise a post-silicon inter-stage passive validation (PSIV) approach to evaluate the mm-wave chip prototype utilizing the embedded voltage root mean square detectors. The proposed SDPA is realized in a 40-nm bulk CMOS, and it delivers 20.4 dBm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\text {SAT}}$ </tex-math></inline-formula> with 39.1%/34% PAE at 0-/6-dB PBO. Over a 23.5–30 GHz band, its PAE is >24% at 6-dB PBO. At 27 GHz, applying a “2 GHz 16-quadratic-amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM)” signal, the proposed SDPA generates 10.2 dBm average power with 18.9% average PAE. The average error vector magnitude is better than −24.5 dB without digital predistortion for a “400-MHz 64-QAM OFDM” signal while generating an average output power of 8.8 dBm with 15% PAE. The AM–AM/AM–PM of the realized SDPA is investigated by employing a “50-MHz 64-QAM OFDM” signal, validating our analysis and showing that the linearity limitation of DPAs is systematic and predictable. Utilizing the proposed PSIV approach, the frequency response of the input/inter-stage passive circuits is measured, indicating an excellent agreement with 3-D electromagnetic (EM) simulation results.

Precise Configuration of Transmission Line Class-E Power Amplifier Operating at GHz Frequency

Power amplifier (PA) is a core part of microwave power transmission (MPT) system. Featuring simple topology and theoretical 100% efficiency, class-E PA is widely discussed both in industry and academia. This article centers around the precise configuration of transmission line class-E PA operating at GHz frequency. Based on the conversion between lumped element topology and transmission line topology of class-E PA, the equal resistance surface-based configuration method is proposed. Specific configuration method for different types of matching network is analyzed according to the corresponding characteristics. Then, an L-type matching network-based class-E PA is designed in detail for the MPT system. Besides, extended application of the proposed method is discussed for different derivate topologies of class-E PA. Finally, a 2.5-GHz/10-W transmission line class-E PA is fabricated in the lab and the proposed configuration method is fully verified with experiments.

Stability analysis and design of floating load voltage‐controlled current sources

AbstractThis paper presents the structure and techniques for frequency compensation of the floating load voltage‐controlled current sources employing power operational amplifiers (op‐amps), as active building blocks. Based on the performed theoretical analysis, conditions for self‐oscillation are determined, and an approach for introducing frequency compensation in a predetermined bandwidth is proposed. The obtained analytical expressions, as well as some additional conditions, are the basis of the proposed design procedure. The practical applicability of the proposed procedure has been tested by designing and analyzing sample electronic circuits of floating load voltage‐to‐current converters.

Early Stopping Criterion for Recursive Least Squares Training of Behavioural Models

The necessity of the rapid evolution of wireless communications, with continuously increasing demands for higher data rates and capacity Zheng (Big datadriven optimization for mobile networks toward 5g 30:44–51, 2016), is constantly augmenting the complexity of radio frequency (RF) transceiver architecture. A significant component in the configuration of such complex radio transceivers is the power amplifier(PA). Multiple distributed PAs are now common in proposed RF architectures. PAs exhibit non linear behaviour, causing signal distortion in transmission. Behavioural models offer a concise representation of a PAs characteristic performance which is extremely useful in simulating performance of multiple nonlinear power amplifiers. A considerable drawback with using the Recursive Least Squares (RLS) technique is that the instability of the coefficients during the training of the model. This manuscript provides a computationally efficient technique to detect the onset of instability during adaptive RLS training and subsequently to inform the decision to cease training of dynamic memory polynomial based behavioural models, to avoid the onset of instability. The proposed technique does not require modification of the RLS algorithm, merely an observation of the pre-exsisting autocorrelation function based update. This technique is experimentally validated using four different signal modulation schemes, LTE OFDM, 5G-NR, DVBS2X and WCDMA.

Continuous Real-Time Circuit Reconfiguration to Maximize Average Output Power in Cognitive Radar Transmitters

A spectrum sharing radar can be guided by a cognitive decision process to determine the optimal radar operating frequency as the spectral environment changes. This decision process utilizes spectrum sensing or spectral prediction to determine the optimal radar transmission for a given situation. The radar transmitter power amplifier performance varies with frequency and bandwidth of the applied waveform, thus adaptive impedance tuners are useful in maximizing the transmitted power and radar range as the transmission frequency range is varied. Since high power handling is required in radar transmissions, and mechanically actuated impedance tuners presently demonstrate the best power handling, the time required to tune is often orders of magnitude greater than the pulse repetition interval. As such, the relatively lengthy impedance tuning operations should be guided to maximize the average output power as the system transitions between different center frequencies, bandwidths, and waveforms over time. This article presents an algorithm that performs impedance tuning with an evanescent-mode cavity tuner based on an average performance gradient computed for multiple transmit pulses. Comparison of test results with traditionally measured amplifier load-pull data shows that the transmitter is effectively optimized for maximum average output power.

An Auto Adjustable Transimpedance Readout System for Wearable Healthcare Devices

The objective of this work was to design a versatile readout circuit for patch-type wearable devices consisting of a Transimpedance Amplifier (TIA). The TIA performs Current to Voltage (I–V) conversion, the most widely used technique for amperometry and impedance measurement for various types of electrochemical sensors. The proposed readout circuit employs a digitally controllable feedback resistor (Rf) technique in the TIA to improve accuracy, which can be utilized in a variety of electrochemical sensors within a current range of 0.1 µA–100 µA. It is designed to accommodate multiple sensors simultaneously to track multiple target analytes for high accuracy and versatile usage. The readout circuit consists of low power operational amplifier (op–amp) and digital circuit blocks, is designed and fabricated with Magna 0.18 µm Complementary Metal Oxide Semiconductor (CMOS) technology, which provides low power consumption and a high degree of integration. The design has a small size of 0.282 mm2 and low power consumption of 0.38 mW with a 3.3 V power supply, which are desirable factors in wearable device applications.

Self-Balancing Power Amplifier with a Minimal DC Offset for Launcher Automation Control Circuits of a Surface-to-Air Missile System

This paper discusses the design of a new self-balancing amplifier of an AC component power characterized by a minimal output DC offset. The design of the amplifier is based on semiconductor technology and intended for application in low-frequency analog signal processing paths, particularly in surface-to-air missile system launcher automation circuits. The proposed solution has several design and technical-implementation advantages, whereas the primary novelty compared to the commonly used ones is the ability for self-generating a near-zero DC component value of output signal. The design features and technical parameters of the developed amplifier make it suitable for use in a wide range of devices that must ensure the stable, prolonged operation of a low-frequency power amplifier under variable weather conditions and a minimal DC offset of output signal.

Comparisons between high power fiber systems in the presence of radiation induced photodarkening

Performance of high power fiber lasers and amplifiers with different pump sources are evaluated in the presence of radiation induced photodarkening in post-irradiated active fibers. Evolutions of output power and thermal mode instability threshold under different radiation doses are examined and analyzed. Severe degradation in both output power and thermal mode instability threshold is recorded for high power fiber systems with their active fibers exposed to radiations. Comparisons show that, amplifiers present a relatively better performance than lasers in adverse environments. Besides, 976 nm pump source is more favorable for high power laser sources in radioactive applications, even though 915 nm pump ensures a much lower temperature profile inside the active fiber.

A Comprehensive Harmonic Analysis of Current-Mode Power Amplifiers

This work presents a comprehensive theoretical analysis of current-mode power amplifiers as a function of input power for different biasing classes under the common simplifying assumption of constant transconductance and hard current cut-off/saturation. Typically, the theoretical analysis of power amplifier performance and behavior are carried out only at maximum output power. However, to achieve high data-rates, modern telecommunication systems adopt signals characterized by a very high peak-to-average power ratio, thus it is useful to analyze the power amplifier behavior as a function of power back-off. Moreover, in many cases, to enhance the efficiency and/or to apply harmonic shaping techniques, a clipped drain-source current, which approaches a square wave, is required. The classical analysis can be extended to low power levels only under the assumption of power-independent conduction angle, which is true only for class-A and class-B amplifiers, and does not take into account possible waveform clipping at maximum current. This work presents a complete theoretical Fourier analysis of FET-based power amplifiers as a function of quiescent drain-source current at any input power level and accounting for the clipped current case, up to the square-wave limit, reorganizing and completing the material that can be found in classical textbooks in the field.

CW and Modulated Input Second Harmonic Injection for Efficiency Enhancement in Broadband Power Amplifiers

The second-harmonic input impedance plays a critical role on the performance of GaN power amplifiers. In a recent paper, a drain efficiency enhancement for a continuous-mode power amplifiers was reported to be achieved using active broadband second-harmonic injection at the PA input. In this paper, the strategy for selecting the second-harmonic input impedance and the necessity for using active injection in such broadband PAs are discussed in detail. Additionally, the methodology for designing an embedded broadband diplexer in the input matching network is reported. Finally, the importance of the phase of the second-harmonic signal injected is demonstrated for both CW and modulated signals using both simulation and measurement, respectively. The effectiveness of the CW and modulated active second-harmonic injection methodology presented here are validated by previously reported measurements that demonstrated an average drain efficiency improvement of 9.4% from 1.3 to 2.4 GHz for CW signals and of 9.7% at 2 GHz for a frequency-modulated 30 MHz chirp radar signal.

Development of single channel EEG Acquisition system for BCI applications

Brain-Computer Interface (BCI) plays a major role in current technologies such as rehabilitation, control of devices, and various medical applications. BCI or brain-machine interface provides direct communication between a brain signal and an external device. In this paperwork, a detailed survey was carried out with the design of single-channel EEG system for various applications. Also, this paper mainly focused on the development of single-channel electroencephalography (EEG) signal acquisition system which includes a preamplifier, bandpass filter, post-amplifier and level shifter circuits. The design of the preamplifier and post-amplifier circuit was carried out by integrated circuits (IC) such as instrumentation amplifier IN128P and bandpass filter with the help of low power operational amplifier LM324. The developed single-channel acquisition board was tested by acquiring an electrooculogram (EOG) signal with closed and opened eye conditions. The acquired signal is displayed and stored in the computer with the help of the HBM-DAQ unit.

Modeling and Simulation of Monolithic Single-Supply Power Operational Amplifiers

In this paper a simple PSpice (Personal Simulation Program with Integrated Circuit Emphasis) macro-model was developed, and verified for monolithic power operational amplifiers operated with a single-supply voltage. The proposed macro-model is developed using simplification and build-up techniques for macro-modeling of operational amplifiers and simulates the basic static and dynamic characteristics, including input impedance, small-signal frequency responses at various voltage gains, output power versus supply voltage, slew-rate-limiting, voltage limiting, output offset voltage versus supply voltage ripples, and output resistance. Furthermore, the macro-model also takes into account the ground reference voltage in the amplifier at a single power supply voltage. The model is implemented as a hierarchical structure suitable for the PSpice circuit simulation platform. The sub-circuit is built using standard PSpice components and analog behavioral modeling blocks. The accuracy of the model is verified by extracting the model parameters for single-supply power operational amplifier TDA2005 from ST Microelectronics as example. The effectiveness of the model is validated by comparing the simulation results of the electrical parameters with the corresponding measured values obtained by experimental testing of sample circuits. The comparative analysis shows that the relative error of the modeled large-signal parameters is less than 15%. Moreover, an error of 15% is quite acceptable, considering the technological tolerances of the electrical parameters for this type of analog ICs.

Demonstration of a W-Band Traveling-Wave Tube Power Amplifier With 10-GHz Bandwidth

We present the experimental demonstration of a traveling-wave tube (TWT) power amplifier operating in the W-band (75-110 GHz) frequency range. The device is based on a serpentine waveguide (SWG) amplification circuit, a slow wave circuit type capable of high power and broad instantaneous bandwidth in the upper millimeter-wave range. A 20 kV, 140-mA round solenoid-focused electron beam powers the device. At 20 kV, we measure 215 ± 2 W peak RF output power at 93 GHz with 20.1 ± 0.15 dB saturated gain, pulsed at 0.1% duty. We observe 10-GHz instantaneous amplification bandwidth at 100-W minimum output power, covering the range 88-98 GHz. Operating at 20.8 kV, the TWT produces 285 ± 3 W at 91 GHz with 22.4 ± 0.15 dB gain, and 7 GHz, 3-dB bandwidth. The peak electronic efficiency measured is approximately 10%.

Increase the bandwidth of the power amplifier to 185% of the bandwidth by ferrite transformers

ABSTRACT The motivation of this paper increases the bandwidth of power amplifier to multioctave by matching circuit, which consists of ferrite balun, 4:1 transformers and RC network feedback to make atrade-off between gain and VSWR. So this work discusses the design of a push-pull power amplifier demonstrating over more than a decade bandwidth using matching networks to achieve [30–800] MHz bandwidth. Matching transformer techniques can be used in order to minimise the return loss and increase the gain. Modification of the classical topology, based on inductive compensation of the parasitic capacitance of ferrite, has been proposed and used to design a 1:4 transformer. Practically, miss-match and heating is the main concern for broadband performance of high power amplifier. Coaxial cable and ferrite are also used to dissipate the heat (high temperature) resulting from the amplification power, in addition to installing the board on a cooler with appropriate dimensions, so we get the best match and stability. The simulation results are compared with the measurements. The measured results show that 20.5–17.46 dB of gain, 50.5–47.46 dBm of output power, and 50.9 of drain efficiency are delivered.

Intelligent identification of telecommunication channels in the distributed systems for digital control of power facilities

This paper presents the results and problems of telecommunication power amplifier modeling. The research tool is the mathematical apparatus of artificial neural networks. Simulation of the device was made according to the black box principle, operating solely with input and output data of the power amplifier under study. The criterion for the quality of model estimation was the signal-to-noise ratio adopted in radio engineering. Brief results of the previous research are shown. The problems associated with the simulation of a power amplifier operation basing on neural networks were investigated. An example is given of nonlinear distortions appearing in the device under consideration. The description is given of the joint work of a neural networks group based on analog signal clustering which works according to the principle of Grossberg’s adaptive resonance theory. The application results of this type of systems are shown. Discussing the problems concerning the use of this approach to simulation of the investigated processes.

Power Efficient GaN HEMT High Power Amplifier Design Operating at 5-7GHz Bandwidth

For the next generation applications in mobile communication, radar and satellite communication we need the devices that can operate at high frequencies and high power with minimum power consumption. There is a growing importance in the recent years for the development of GaN transistors.This paper presents design of the power efficient GaN based high power amplifier operating in the bandwidth of 5GHz – 7GHz based on a 12 Watt Discrete Power GaN on SiC HEMT from TriQuint. In this manuscript the design of RF power amplifier, its stability, input and output matching impedance and performance for 5-7GHz is presented. Design and simulations of the power amplifier are carried out using Advanced Design System (ADS). Simulation results of device stability, gain and Power Added Efficiency (PAE) shows good accordance with the specifications and parameters of the device.In the design process, for better correlation in measurement and simulation results precision of passive element models are specially considered. In 1 dB compression point for the designed high power amplifier, the experiment and the simulation results show a Power Efficiency of 68%.

Power Efficient GaN HEMT High Power Amplifier Design Operating at 5-7GHz Bandwidth

For the next generation applications in mobile communication, radar and satellite communication we need the devices that can operate at high frequencies and high power with minimum power consumption. There is a growing importance in the recent years for the development of GaN transistors.This paper presents design of the power efficient GaN based high power amplifier operating in the bandwidth of 5GHz – 7GHz based on a 12 Watt Discrete Power GaN on SiC HEMT from TriQuint. In this manuscript the design of RF power amplifier, its stability, input and output matching impedance and performance for 5-7GHz is presented. Design and simulations of the power amplifier are carried out using Advanced Design System (ADS). Simulation results of device stability, gain and Power Added Efficiency (PAE) shows good accordance with the specifications and parameters of the device.In the design process, for better correlation in measurement and simulation results precision of passive element models are specially considered. In 1 dB compression point for the designed high power amplifier, the experiment and the simulation results show a Power Efficiency of 68%.

Operation of a Single-Frequency Bismuth-Doped Fiber Power Amplifier near 1.65 µm

The spectral range between 1650 and 1700 nm is an interesting region due to its potential applications in optical telecommunication and optical-based methane sensing. Unfortunately, the availability of compact and simple optical amplifiers with output powers exceeding tens of milliwatts in this spectral region is still limited. In this paper, a single-frequency continuous-wave bismuth-doped fiber amplifier (BDFA) operating at 1651 and 1687 nm is presented. With the improved signal/pump coupling and modified pump source design, the output powers of 163 mW (at 1651 nm) and 197 mW (at 1687 nm) were obtained. Application of the BDFA to the optical spectroscopy of methane near 1651 nm is also described. We demonstrate that the BDFA can be effectively used for signal amplitude enhancement in photothermal interferometry.

Research on Constant Current Technology of High Current Power Amplifier for Relay Protection Test Device

In order to provide more accurate and consistent reference current for power system under different loads, the constant current performance of the high-current power amplifier is studied. This paper presents a circuit topology suitable for high-current power amplifier circuits, and analyses the key factors that affect its constant current characteristics. It is found that resistance matching plays a decisive role in the constant current characteristics. Through quantitative analysis and verification, the boundary conditions of the output resistance of the high-current power amplifier under the specified resistance accuracy are also found. Then based on Monte Carlo analysis and worst-case analysis, the previous theoretical derivation afterwards is conducted. Finally, an effective method of resistance matching is brought forward, which is authenticated in the contrast test later.