Abstract
For the next generation applications in mobile communication, radar and satellite communication we need the devices that can operate at high frequencies and high power with minimum power consumption. There is a growing importance in the recent years for the development of GaN transistors.This paper presents design of the power efficient GaN based high power amplifier operating in the bandwidth of 5GHz – 7GHz based on a 12 Watt Discrete Power GaN on SiC HEMT from TriQuint. In this manuscript the design of RF power amplifier, its stability, input and output matching impedance and performance for 5-7GHz is presented. Design and simulations of the power amplifier are carried out using Advanced Design System (ADS). Simulation results of device stability, gain and Power Added Efficiency (PAE) shows good accordance with the specifications and parameters of the device.In the design process, for better correlation in measurement and simulation results precision of passive element models are specially considered. In 1 dB compression point for the designed high power amplifier, the experiment and the simulation results show a Power Efficiency of 68%.
Highlights
HIGH power amplifier (HPA) plays a very vital role in many communication system designs specially the mobile and wireless communication
High electron mobility transistors (HEMTs) with a large breakdown voltages can meet the requirements of wide band wireless and mobile applications
Advancements in the diversity of these devices like SiC MESFET, Gallium Arsenide (GaAs), and Gallium Nitride HEMTs are considered appropriate for such applications [1, 2]
Summary
HIGH power amplifier (HPA) plays a very vital role in many communication system designs specially the mobile and wireless communication. The application specific amplifier designs, where the features like high gain of the amplifier, improved efficiency wide bandwidth, reliability, high output power, and good thermal performance are required only the novel transistor technologies can meet such stringent performances. High electron mobility transistors (HEMTs) with a large breakdown voltages can meet the requirements of wide band wireless and mobile applications. Advancements in the diversity of these devices like SiC MESFET, Gallium Arsenide (GaAs), and Gallium Nitride HEMTs are considered appropriate for such applications [1, 2]. Devices for instance, mobile phones and PDAs, HPA consumes most of the power. Both in base station equipment infrastructure and portable devices, the HPA has to placate numerous stringent requirements. Most of the currently existing HPAs are being operated at narrow bandwidths
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